JP3953821B2 - 膜厚測定方法および膜厚測定装置 - Google Patents
膜厚測定方法および膜厚測定装置 Download PDFInfo
- Publication number
- JP3953821B2 JP3953821B2 JP2002009304A JP2002009304A JP3953821B2 JP 3953821 B2 JP3953821 B2 JP 3953821B2 JP 2002009304 A JP2002009304 A JP 2002009304A JP 2002009304 A JP2002009304 A JP 2002009304A JP 3953821 B2 JP3953821 B2 JP 3953821B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- current value
- film thickness
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 70
- 239000000758 substrate Substances 0.000 claims description 350
- 239000010409 thin film Substances 0.000 claims description 206
- 239000010408 film Substances 0.000 claims description 161
- 238000010894 electron beam technology Methods 0.000 claims description 144
- 238000005259 measurement Methods 0.000 claims description 75
- 238000012545 processing Methods 0.000 claims description 72
- 238000012937 correction Methods 0.000 claims description 67
- 238000013500 data storage Methods 0.000 claims description 17
- 238000009826 distribution Methods 0.000 claims description 16
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 238000004590 computer program Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 claims description 3
- 239000000523 sample Substances 0.000 description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 229910052814 silicon oxide Inorganic materials 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 238000010586 diagram Methods 0.000 description 11
- 238000004364 calculation method Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 230000001133 acceleration Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 238000011088 calibration curve Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- -1 ferroelectric Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2814—Measurement of surface topography
- H01J2237/2815—Depth profile
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002009304A JP3953821B2 (ja) | 2002-01-17 | 2002-01-17 | 膜厚測定方法および膜厚測定装置 |
| TW091138099A TW580560B (en) | 2002-01-17 | 2002-12-31 | Method and apparatus for measuring thickness of thin film |
| US10/336,766 US6683308B2 (en) | 2002-01-17 | 2003-01-06 | Method and apparatus for measuring thickness of thin film |
| KR10-2003-0001380A KR100526668B1 (ko) | 2002-01-17 | 2003-01-09 | 박막두께측정방법 및 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002009304A JP3953821B2 (ja) | 2002-01-17 | 2002-01-17 | 膜厚測定方法および膜厚測定装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003214831A JP2003214831A (ja) | 2003-07-30 |
| JP2003214831A5 JP2003214831A5 (enExample) | 2005-08-04 |
| JP3953821B2 true JP3953821B2 (ja) | 2007-08-08 |
Family
ID=19191506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002009304A Expired - Fee Related JP3953821B2 (ja) | 2002-01-17 | 2002-01-17 | 膜厚測定方法および膜厚測定装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6683308B2 (enExample) |
| JP (1) | JP3953821B2 (enExample) |
| KR (1) | KR100526668B1 (enExample) |
| TW (1) | TW580560B (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3953821B2 (ja) * | 2002-01-17 | 2007-08-08 | ファブソリューション株式会社 | 膜厚測定方法および膜厚測定装置 |
| JP3913555B2 (ja) * | 2002-01-17 | 2007-05-09 | ファブソリューション株式会社 | 膜厚測定方法および膜厚測定装置 |
| JP4090303B2 (ja) * | 2002-08-08 | 2008-05-28 | 株式会社日立ハイテクノロジーズ | 電子ビーム計測用センサー及び電子ビーム計測方法 |
| US7459913B2 (en) * | 2004-08-13 | 2008-12-02 | International Business Machines Corporation | Methods for the determination of film continuity and growth modes in thin dielectric films |
| US7162133B2 (en) * | 2004-08-20 | 2007-01-09 | Agency For Science Technology And Research | Method to trim and smooth high index contrast waveguide structures |
| CN100592028C (zh) * | 2005-01-07 | 2010-02-24 | 精工电子纳米科技有限公司 | 薄膜样品测量方法和设备及薄膜样品制备方法和设备 |
| JP2008034475A (ja) * | 2006-07-26 | 2008-02-14 | Renesas Technology Corp | 半導体装置の製造方法 |
| DK2251454T3 (da) | 2009-05-13 | 2014-10-13 | Sio2 Medical Products Inc | Coating og inspektion af beholder |
| US7985188B2 (en) | 2009-05-13 | 2011-07-26 | Cv Holdings Llc | Vessel, coating, inspection and processing apparatus |
| US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
| JP2011029271A (ja) * | 2009-07-22 | 2011-02-10 | Micronics Japan Co Ltd | 薄膜特性測定装置及び方法、並びに、薄膜加工装置及び方法 |
| US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
| US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
| US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
| JP5754296B2 (ja) * | 2011-08-18 | 2015-07-29 | Jfeスチール株式会社 | 膜厚均一性評価方法 |
| JP5754297B2 (ja) * | 2011-08-18 | 2015-07-29 | Jfeスチール株式会社 | 膜厚均一性評価方法 |
| US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
| AU2012318242A1 (en) | 2011-11-11 | 2013-05-30 | Sio2 Medical Products, Inc. | Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus |
| EP2846755A1 (en) | 2012-05-09 | 2015-03-18 | SiO2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
| US20150297800A1 (en) | 2012-07-03 | 2015-10-22 | Sio2 Medical Products, Inc. | SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS |
| CA2890066C (en) | 2012-11-01 | 2021-11-09 | Sio2 Medical Products, Inc. | Coating inspection method |
| WO2014078666A1 (en) | 2012-11-16 | 2014-05-22 | Sio2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
| EP2925903B1 (en) | 2012-11-30 | 2022-04-13 | Si02 Medical Products, Inc. | Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like |
| US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
| EP2961858B1 (en) | 2013-03-01 | 2022-09-07 | Si02 Medical Products, Inc. | Coated syringe. |
| US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
| CN105392916B (zh) | 2013-03-11 | 2019-03-08 | Sio2医药产品公司 | 涂布包装材料 |
| EP2971227B1 (en) | 2013-03-15 | 2017-11-15 | Si02 Medical Products, Inc. | Coating method. |
| EP3693493A1 (en) | 2014-03-28 | 2020-08-12 | SiO2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
| US10203202B2 (en) * | 2014-04-07 | 2019-02-12 | John Weber Schultz | Non-contact determination of coating thickness |
| KR101630798B1 (ko) * | 2014-11-05 | 2016-06-15 | 한국표준과학연구원 | 코팅 두께 측정 장치 및 방법 |
| US11077233B2 (en) | 2015-08-18 | 2021-08-03 | Sio2 Medical Products, Inc. | Pharmaceutical and other packaging with low oxygen transmission rate |
| CN105470162B (zh) * | 2016-01-08 | 2019-07-02 | 武汉新芯集成电路制造有限公司 | 一种侦测接触孔缺陷的方法 |
| US11410830B1 (en) | 2019-03-23 | 2022-08-09 | Kla Corporation | Defect inspection and review using transmissive current image of charged particle beam system |
| EP4099091B1 (en) | 2021-06-02 | 2024-04-10 | IMEC vzw | Pattern height metrology using an e-beam system |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS639807A (ja) | 1986-06-30 | 1988-01-16 | Nec Corp | 膜厚測定方法およびその装置 |
| US5162240A (en) * | 1989-06-16 | 1992-11-10 | Hitachi, Ltd. | Method and apparatus of fabricating electric circuit pattern on thick and thin film hybrid multilayer wiring substrate |
| JPH0817166B2 (ja) * | 1991-04-27 | 1996-02-21 | 信越半導体株式会社 | 超薄膜soi基板の製造方法及び製造装置 |
| JPH06273297A (ja) | 1993-03-19 | 1994-09-30 | Casio Comput Co Ltd | イオンビームによるエッチング方法 |
| JP3058394B2 (ja) | 1994-06-23 | 2000-07-04 | シャープ株式会社 | 透過電子顕微鏡用断面試料作成方法 |
| JP3075535B2 (ja) * | 1998-05-01 | 2000-08-14 | キヤノン株式会社 | 電子放出素子、電子源及び画像形成装置の製造方法 |
| JP3292159B2 (ja) | 1998-12-10 | 2002-06-17 | 日本電気株式会社 | 膜厚測定装置および膜厚測定方法 |
| JP3953821B2 (ja) * | 2002-01-17 | 2007-08-08 | ファブソリューション株式会社 | 膜厚測定方法および膜厚測定装置 |
| JP3913555B2 (ja) * | 2002-01-17 | 2007-05-09 | ファブソリューション株式会社 | 膜厚測定方法および膜厚測定装置 |
-
2002
- 2002-01-17 JP JP2002009304A patent/JP3953821B2/ja not_active Expired - Fee Related
- 2002-12-31 TW TW091138099A patent/TW580560B/zh active
-
2003
- 2003-01-06 US US10/336,766 patent/US6683308B2/en not_active Expired - Fee Related
- 2003-01-09 KR KR10-2003-0001380A patent/KR100526668B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030063129A (ko) | 2003-07-28 |
| US20030132381A1 (en) | 2003-07-17 |
| TW200302341A (en) | 2003-08-01 |
| JP2003214831A (ja) | 2003-07-30 |
| KR100526668B1 (ko) | 2005-11-08 |
| US6683308B2 (en) | 2004-01-27 |
| TW580560B (en) | 2004-03-21 |
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