JP3945872B2 - めっき前処理方法 - Google Patents

めっき前処理方法 Download PDF

Info

Publication number
JP3945872B2
JP3945872B2 JP26930297A JP26930297A JP3945872B2 JP 3945872 B2 JP3945872 B2 JP 3945872B2 JP 26930297 A JP26930297 A JP 26930297A JP 26930297 A JP26930297 A JP 26930297A JP 3945872 B2 JP3945872 B2 JP 3945872B2
Authority
JP
Japan
Prior art keywords
plating
pressure
medium
liquid
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP26930297A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1192990A5 (enExample
JPH1192990A (ja
Inventor
文夫 栗山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP26930297A priority Critical patent/JP3945872B2/ja
Priority to KR1019980037903A priority patent/KR100538301B1/ko
Priority to DE69823952T priority patent/DE69823952T2/de
Priority to EP98117559A priority patent/EP0913497B1/en
Priority to US09/153,895 priority patent/US6123984A/en
Publication of JPH1192990A publication Critical patent/JPH1192990A/ja
Publication of JPH1192990A5 publication Critical patent/JPH1192990A5/ja
Application granted granted Critical
Publication of JP3945872B2 publication Critical patent/JP3945872B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/168—Control of temperature, e.g. temperature of bath, substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1644—Composition of the substrate porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/1682—Control of atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/1685—Process conditions with supercritical condition, e.g. chemical fluid deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2401/00—Form of the coating product, e.g. solution, water dispersion, powders or the like
    • B05D2401/90—Form of the coating product, e.g. solution, water dispersion, powders or the like at least one component of the composition being in supercritical state or close to supercritical state
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0085—Apparatus for treatments of printed circuits with liquids not provided for in groups H05K3/02 - H05K3/46; conveyors and holding means therefor
    • H05K3/0088—Apparatus for treatments of printed circuits with liquids not provided for in groups H05K3/02 - H05K3/46; conveyors and holding means therefor for treatment of holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Chemically Coating (AREA)
JP26930297A 1997-09-16 1997-09-16 めっき前処理方法 Expired - Fee Related JP3945872B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP26930297A JP3945872B2 (ja) 1997-09-16 1997-09-16 めっき前処理方法
KR1019980037903A KR100538301B1 (ko) 1997-09-16 1998-09-15 기판도금방법및장치
DE69823952T DE69823952T2 (de) 1997-09-16 1998-09-16 Verfahren zum Plattieren
EP98117559A EP0913497B1 (en) 1997-09-16 1998-09-16 Method for plating a substrate
US09/153,895 US6123984A (en) 1997-09-16 1998-09-16 Method and apparatus for plating a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26930297A JP3945872B2 (ja) 1997-09-16 1997-09-16 めっき前処理方法

Publications (3)

Publication Number Publication Date
JPH1192990A JPH1192990A (ja) 1999-04-06
JPH1192990A5 JPH1192990A5 (enExample) 2004-10-14
JP3945872B2 true JP3945872B2 (ja) 2007-07-18

Family

ID=17470460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26930297A Expired - Fee Related JP3945872B2 (ja) 1997-09-16 1997-09-16 めっき前処理方法

Country Status (5)

Country Link
US (1) US6123984A (enExample)
EP (1) EP0913497B1 (enExample)
JP (1) JP3945872B2 (enExample)
KR (1) KR100538301B1 (enExample)
DE (1) DE69823952T2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001027357A1 (en) * 1999-10-12 2001-04-19 Semitool, Inc. Method and apparatus for executing plural processes on a microelectronic workpiece at a single processing station
US20050205111A1 (en) * 1999-10-12 2005-09-22 Ritzdorf Thomas L Method and apparatus for processing a microfeature workpiece with multiple fluid streams
JP4660661B2 (ja) * 2000-02-22 2011-03-30 コスモ石油株式会社 プラスチックのメッキ前処理方法、メッキ方法、メッキ物の製造方法及びメッキ装置
AU2001275795A1 (en) * 2000-08-24 2002-03-04 Hiroe Asai Electrochemical treating method such as electroplating and electrochemical reaction device therefor
CN101147909B (zh) 2002-05-20 2010-06-09 松下电器产业株式会社 清洗方法
WO2004044281A2 (en) * 2002-11-12 2004-05-27 The Regents Of The University Of California Nano-porous fibers and protein membranes
US7217749B2 (en) * 2003-01-20 2007-05-15 Northern Technologies International Corporation Process for infusing an alkali metal nitrite into a synthetic resinous material
US7217750B2 (en) * 2003-01-20 2007-05-15 Northern Technologies International Corporation Process for incorporating one or more materials into a polymer composition and products produced thereby
JP2004225152A (ja) * 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
CN101459050B (zh) * 2007-12-14 2013-03-27 盛美半导体设备（上海）有限公司 电化学或化学沉积金属层前预浸润晶片表面的方法和装置
US10221488B2 (en) * 2015-09-18 2019-03-05 General Electric Company Supercritical water method for treating internal passages

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2719782B2 (ja) * 1987-08-19 1998-02-25 イビデン株式会社 多層プリント配線板の製造方法
JPH02209729A (ja) * 1989-02-09 1990-08-21 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び異物除去装置
JPH03127832A (ja) * 1989-10-13 1991-05-30 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び乾燥装置
KR930019861A (ko) * 1991-12-12 1993-10-19 완다 케이. 덴슨-로우 조밀상 기체를 이용한 코팅 방법
JPH07283219A (ja) * 1994-04-13 1995-10-27 Sanyo Electric Co Ltd 半導体装置および半導体装置の製造方法および半導体装 置の製造装置
JPH09139374A (ja) * 1995-11-15 1997-05-27 Hitachi Ltd 表面処理方法および装置ならびにこれにより得られた素子

Also Published As

Publication number Publication date
EP0913497B1 (en) 2004-05-19
KR19990029783A (ko) 1999-04-26
DE69823952D1 (de) 2004-06-24
US6123984A (en) 2000-09-26
EP0913497A1 (en) 1999-05-06
DE69823952T2 (de) 2005-05-12
KR100538301B1 (ko) 2006-03-16
JPH1192990A (ja) 1999-04-06

Similar Documents

Publication Publication Date Title
US6544585B1 (en) Method and apparatus for plating a substrate
JP3945872B2 (ja) めっき前処理方法
TWI222127B (en) Pressure chamber assembly including drive means
US6286231B1 (en) Method and apparatus for high-pressure wafer processing and drying
US10199240B2 (en) Substrate processing method, substrate processing apparatus, and storage medium
US6295998B1 (en) Temperature controlled gassification of deionized water for megasonic cleaning of semiconductor wafers
WO2003049167A1 (en) Method of high pressure treatment
US12334330B2 (en) Substrate treating apparatus
US12300515B2 (en) Substrate treating apparatus and substrate treating method
JP3492528B2 (ja) 超臨界乾燥装置および方法
US7033089B2 (en) Method of developing a resist film and a resist development processor
JPH1193000A (ja) めっき方法及び装置
JPH11152597A (ja) めっき前処理方法
KR101116644B1 (ko) 기판 건조 방법 및 장치
JP5066336B2 (ja) 高圧処理装置及び高圧処理方法
JPH11181574A (ja) めっき前処理方法
KR100626363B1 (ko) 기판 건조 장치
JP3720548B2 (ja) めっき前処理装置
TW200822195A (en) Method for cleaning a substrate
KR950007197B1 (ko) 수증기의 공급장치 및 그 제어방법
KR20110082307A (ko) 기판 건조 장치 및 기판 건조 방법
JPH1192948A (ja) めっき方法及び装置
JPH11200058A (ja) めっき装置
KR20060129790A (ko) 기판 세정 건조 장치
JP2008016548A (ja) 高圧処理方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040623

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040831

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041101

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20041130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041228

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050127

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20050315

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20050408

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070410

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees