JP3945184B2 - ワイヤボンディング方法 - Google Patents

ワイヤボンディング方法 Download PDF

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JP3945184B2
JP3945184B2 JP2001131455A JP2001131455A JP3945184B2 JP 3945184 B2 JP3945184 B2 JP 3945184B2 JP 2001131455 A JP2001131455 A JP 2001131455A JP 2001131455 A JP2001131455 A JP 2001131455A JP 3945184 B2 JP3945184 B2 JP 3945184B2
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Prior art keywords
wire
bonding
wedge
lead frame
bonded
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JP2002329740A (ja
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純也 古屋敷
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
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Description

【0001】
【発明の属する技術分野】
本発明は、例えば半導体発光素子をリードフレームにワイヤボンディングして樹脂封止した発光装置等の電子部品に係り、特にボンディングされるワイヤの断線を防ぐワイヤボンディング方法に関する。
【0002】
【従来の技術】
例えば半導体発光素子を用いた発光ダイオードの分野では、リードフレームやプリント配線基板等の導通材に発光素子を実装する工程において、電気的導通のためにAu線等を利用したワイヤボンディングが行われる。この工程では、発光素子の上面に電極がある場合(第1ボンド点)では、電極および半導体層へのダメージを抑えるため、電極の表面にワイヤを小さな塊として付着させて電極に接合するボールボンディングが行われる。そして、リードフレーム側(第2ボンド点)では、リードフレームの表面にワイヤを押しつけながらカットするウェッジボンディングとすることが通常である。
【0003】
このようにリードフレームやプリント配線基板等の導通材との接続をワイヤボンディングで行う場合、使用するワイヤと導通材との材質が異なると、特にウェッジボンディング部において接着の信頼性が著しく低下するという問題がある。この点を解消するものとして、特開平11−163026号公報に記載のワイヤボンディング方法が知られている。この公報に記載のワイヤボンディング方法は、ワイヤと第1ボンド点および第2ボンド点の接着を行った後、第2ボンド点の接着により生じた接合部の上に、ボールボンディング方式の接着法により、ワイヤと同一金属よりなる金属ボールを接着するというものである。
【0004】
図3は特開平11−163026号公報に記載のワイヤボンディング方法に相当する従来の配線接続部の詳細であって、(a)は平面図、(b)は側面図である。図3に示すように、従来の配線接続部は、ワイヤ51のウェッジボンディング部52の上にボールボンディング方式の接着法により、ワイヤ51と同一材料であるAuのボールを接着して金属突起53を形成したものである。このように金属突起53を形成することにより、ウェッジボンディング部52上に第1ボンド点接合部と同程度の厚さの厚膜部が形成されるので、ウェッジボンディング部52は補強され、第1ボンド点接合部と同様に信頼性の高い接合部が得られるとされている。
【0005】
【発明が解決しようとする課題】
ところが、従来のウェッジボンディングでは、ワイヤ51をリードフレーム55の表面に押しつけながらカットするため、ウェッジボンディング部52の肉厚は必ずワイヤ51よりも薄くなる。そして、ウェッジボンディング部52の肉厚の薄い部分に図3に示す金属突起53を形成した場合であっても、ウェッジボンディング部52と金属突起53との境界点54の肉厚は変わらないため、ワイヤ51の破断はこの境界点54近傍で発生する可能性がある。
【0006】
また、ウェッジボンディングでは、リードフレーム55の表面に対してワイヤ51が斜めに入射するので、ボンディング後にはリードフレーム55の表面とワイヤ51との間に楔状の隙間ができてしまう。このため、発光素子およびリードフレーム55のボンディングエリアを含めて樹脂封止したとき、内部に残っている水分がリフロー等の工程中で加熱されて封止樹脂中で水蒸気となって膨張し、この膨張によってワイヤがリードフレーム55から剥離してしまうことがある。
【0007】
また、このような封止樹脂の膨張だけでなく、封止樹脂を型成形するときには高温の溶融樹脂が注入され常温中で冷却されるので、溶融樹脂が冷却硬化するときの熱応力およびこれに基づく内部応力の変化によってワイヤ51に引張りが作用する。さらに、使用環境の温度変化によっても、封止樹脂の応力は様々に変動して、同様にワイヤ51に引張りを作用させる。したがって、この引張りによって、ワイヤ51自身が破断したり、ボンディング面からの剥離と破断とが同時に起きたりする。
【0008】
そこで、本発明においては、ウェッジボンディングにより肉厚の薄くなったワイヤの破断を防止するワイヤボンディング方法を提供する。
【0009】
【課題を解決するための手段】
上記課題を解決するため本発明は、ウェッジボンディングされたワイヤの接合部の上からボールボンディングを行うワイヤボンディング方法であって、ボールボンディングをワイヤの線径部分を含めて行うことを特徴とする。
【0010】
これにより、ウェッジボンディング部の肉厚を厚くすることができ、また、ワイヤの線径部分が接合される領域を増やすことができるため、ウェッジボンディングされたワイヤの剥離および断線を防止することが可能となる。
【0011】
【発明の実施の形態】
請求項1に記載の発明は、導通材にウェッジボンディングされたワイヤの接合部の上からボールボンディングを行うワイヤボンディング方法であって、前記ボールボンディングをウェッジボンディングされたワイヤの接合部と線径部分を含めて行い、線径部分を前記導通材に押しつけ導通材と接続する領域を拡げることを特徴とするワイヤボンディング方法であり、ウェッジボンディング部の肉厚を厚くすることができ、また、ワイヤの線径部分が接合される領域を増やすことができるため、封止樹脂の熱応力や内部応力の変化によるワイヤへの引張り作用によるリードフレーム等の導通材からのワイヤの剥離および断線を防止できる。
【0012】
以下、本発明の実施の形態について図面を参照して説明する。
【0013】
図1は本発明の実施の形態における配線接続部の詳細であって、(a)は平面図、(b)は側面図、図2は図1のA−A線断面図である。
【0014】
図において、本発明の実施の形態におけるワイヤボンディング構造は、従来の方法によりリードフレーム4上にウェッジボンディングされた金のワイヤ1の接合部(ウェッジボンディング部)2の上から従来の方法により金のボールボンディングを行うに際し、ワイヤ1の線径φ部分を含めてボールボンディングを行うことによりボンディング部3を形成したものである。
【0015】
本実施形態におけるワイヤボンディング方法によれば、このようにボールボンディングをワイヤ1の線径φ部分を含めて行うことで、接合部2の肉厚を厚くすることができる。また、接合部2に形成されるリードフレーム4とワイヤ1との合金層と金の層との境界面は破断しやすいが、ワイヤ1の線径φ部分を含めてボールボンディングを行うことでこの境界面は覆われるため、接合部2の破断を防止することができる。
【0016】
さらに、線径φ部分をリードフレーム4へ押しつけるため線径φ部分とリードフレーム4が接続される領域が拡がり、あるいはリードフレーム4とワイヤ1との隙間が小さくなるので、接合強度が高くなるとともに、後に樹脂封止する際の封止樹脂の入り込み量が少なくなる。したがって、表面実装時の加熱によって接合部2にかかる樹脂応力が小さくなり、また樹脂応力に対する接合強度も強くなり、ウェッジボンディングされたワイヤ1の破断を防止した信頼性の高い半導体装置が得られる。
【0017】
【発明の効果】
本発明によれば、ボールボンディングをワイヤの線径部分を含めて行うことで、ウェッジボンディング部の肉厚を厚くすることができ、またワイヤの線径部分が接合される領域も広くなるため、ウェッジボンディングされたワイヤの破断を防止した信頼性の高い半導体装置が得られる。
【図面の簡単な説明】
【図1】本発明の実施の形態における配線接続部の詳細であって、
(a)は平面図
(b)は側面図
【図2】図1のA−A線断面図
【図3】従来の配線接続部の詳細であって、
(a)は平面図
(b)は側面図
【符号の説明】
1 ワイヤ
2 接合部
3 ボンディング部
4 リードフレーム

Claims (1)

  1. 導通材にウェッジボンディングされたワイヤの接合部の上からボールボンディングを行うワイヤボンディング方法であって、前記ボールボンディングをウェッジボンディングされたワイヤの接合部と線径部分を含めて行い、線径部分を前記導通材に押しつけ導通材と接続する領域を拡げることを特徴とするワイヤボンディング方法。
JP2001131455A 2001-04-27 2001-04-27 ワイヤボンディング方法 Expired - Lifetime JP3945184B2 (ja)

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JP5008832B2 (ja) 2005-04-15 2012-08-22 ローム株式会社 半導体装置及び半導体装置の製造方法
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