JP3941440B2 - 電気光学装置及びその製造方法、並びに投射型表示装置 - Google Patents
電気光学装置及びその製造方法、並びに投射型表示装置 Download PDFInfo
- Publication number
- JP3941440B2 JP3941440B2 JP2001274142A JP2001274142A JP3941440B2 JP 3941440 B2 JP3941440 B2 JP 3941440B2 JP 2001274142 A JP2001274142 A JP 2001274142A JP 2001274142 A JP2001274142 A JP 2001274142A JP 3941440 B2 JP3941440 B2 JP 3941440B2
- Authority
- JP
- Japan
- Prior art keywords
- electro
- optical device
- substrate
- insulating film
- interlayer insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims description 145
- 239000010408 film Substances 0.000 claims description 127
- 239000000463 material Substances 0.000 claims description 75
- 239000003566 sealing material Substances 0.000 claims description 53
- 239000011229 interlayer Substances 0.000 claims description 50
- 239000004020 conductor Substances 0.000 claims description 13
- 238000007789 sealing Methods 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 239000000382 optic material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 45
- 239000004973 liquid crystal related substance Substances 0.000 description 29
- 239000011347 resin Substances 0.000 description 24
- 229920005989 resin Polymers 0.000 description 24
- 238000000034 method Methods 0.000 description 22
- 230000008569 process Effects 0.000 description 20
- 239000003990 capacitor Substances 0.000 description 18
- 238000005070 sampling Methods 0.000 description 15
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 239000003086 colorant Substances 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 7
- 238000005498 polishing Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 238000000016 photochemical curing Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- -1 NSG Substances 0.000 description 2
- 239000004988 Nematic liquid crystal Substances 0.000 description 2
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Projection Apparatus (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001274142A JP3941440B2 (ja) | 2000-11-17 | 2001-09-10 | 電気光学装置及びその製造方法、並びに投射型表示装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000351394 | 2000-11-17 | ||
| JP2000-351394 | 2000-11-17 | ||
| JP2001274142A JP3941440B2 (ja) | 2000-11-17 | 2001-09-10 | 電気光学装置及びその製造方法、並びに投射型表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002214627A JP2002214627A (ja) | 2002-07-31 |
| JP2002214627A5 JP2002214627A5 (https=) | 2005-02-24 |
| JP3941440B2 true JP3941440B2 (ja) | 2007-07-04 |
Family
ID=26604204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001274142A Expired - Fee Related JP3941440B2 (ja) | 2000-11-17 | 2001-09-10 | 電気光学装置及びその製造方法、並びに投射型表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3941440B2 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4050709B2 (ja) | 2003-04-01 | 2008-02-20 | セイコーエプソン株式会社 | 電気光学装置及びこの電気光学装置を備えた電子機器 |
| JP2006227242A (ja) * | 2005-02-17 | 2006-08-31 | Seiko Epson Corp | 電気光学装置及び電子機器 |
| JP5590050B2 (ja) * | 2012-01-18 | 2014-09-17 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| WO2015170700A1 (ja) * | 2014-05-07 | 2015-11-12 | シャープ株式会社 | 液晶表示装置 |
| JP6740610B2 (ja) * | 2015-12-22 | 2020-08-19 | 凸版印刷株式会社 | 液晶表示装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62135813A (ja) * | 1985-12-10 | 1987-06-18 | Seiko Epson Corp | 液晶表示装置 |
| JPH04324825A (ja) * | 1991-04-25 | 1992-11-13 | Matsushita Electric Ind Co Ltd | 液晶表示素子及びその製造方法 |
| JPH05241183A (ja) * | 1992-02-26 | 1993-09-21 | Canon Inc | 液晶表示体 |
| JPH0682809A (ja) * | 1992-08-31 | 1994-03-25 | Sony Corp | 液晶表示装置 |
| JP4302194B2 (ja) * | 1997-04-25 | 2009-07-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH1164874A (ja) * | 1997-08-25 | 1999-03-05 | Seiko Epson Corp | 液晶パネル |
| JP3719343B2 (ja) * | 1997-12-25 | 2005-11-24 | セイコーエプソン株式会社 | 電気光学装置用基板、電気光学装置、電気光学装置の駆動方法及び電子機器並びに投射型表示装置 |
| JP3536639B2 (ja) * | 1998-01-09 | 2004-06-14 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP3876565B2 (ja) * | 1998-07-14 | 2007-01-31 | セイコーエプソン株式会社 | 電気光学装置およびその製造方法 |
| JP2000199915A (ja) * | 1999-01-06 | 2000-07-18 | Matsushita Electric Ind Co Ltd | 液晶表示パネル |
| JP3231727B2 (ja) * | 1999-02-19 | 2001-11-26 | 鹿児島日本電気株式会社 | Tft基板及び多面取りガラス基板上へのtft基板の配列方法 |
-
2001
- 2001-09-10 JP JP2001274142A patent/JP3941440B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002214627A (ja) | 2002-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3494172B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP3938112B2 (ja) | 電気光学装置並びに電子機器 | |
| KR20020075287A (ko) | 기판 장치의 제조 방법 및 기판 장치, 전기 광학 장치의제조 방법 및 전기 광학 장치, 및 전자 기기 | |
| KR20040094339A (ko) | 전기광학장치 및 전자기기 | |
| JP2002189228A (ja) | 電気光学装置及びその製造方法、並びに投射型表示装置 | |
| JP3736513B2 (ja) | 電気光学装置及びその製造方法並びに電子機器 | |
| JP3821067B2 (ja) | 電気光学装置及び電子機器 | |
| JP2002156652A (ja) | 電気光学装置及びその製造方法 | |
| JP3937721B2 (ja) | 電気光学装置及びその製造方法並びにプロジェクタ | |
| JP3608531B2 (ja) | 電気光学装置及び投射型表示装置 | |
| US7449411B2 (en) | Semiconductor device and manufacturing method thereof, electro-optical device and manufacturing method thereof, and electronic apparatus | |
| JP2003280020A (ja) | 電気光学装置及びその製造方法並びに電子機器 | |
| JP3830361B2 (ja) | Tftアレイ基板、電気光学装置及び投射型表示装置 | |
| JP3941440B2 (ja) | 電気光学装置及びその製造方法、並びに投射型表示装置 | |
| JP4374812B2 (ja) | 電気光学装置用基板の製造方法、電気光学装置用基板、電気光学装置及び電子機器 | |
| JP4214741B2 (ja) | 電気光学装置及び電子機器 | |
| JP3979010B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP3965935B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP3982183B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP4023107B2 (ja) | 電気光学装置及びこれを具備する電子機器 | |
| JP4147747B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP4109413B2 (ja) | 基板装置の製造方法 | |
| JP3736330B2 (ja) | 電気光学装置 | |
| JP2005148387A (ja) | 電気光学装置の製造方法及び電気光学装置、並びにこれを備えた電子機器 | |
| JP3849342B2 (ja) | 電気光学装置の製造方法及び電気光学装置並びにプロジェクタ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040318 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040318 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060726 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070313 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070326 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110413 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110413 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120413 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130413 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130413 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140413 Year of fee payment: 7 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |