JP3916846B2 - 基板研磨装置及び基板研磨方法 - Google Patents
基板研磨装置及び基板研磨方法 Download PDFInfo
- Publication number
- JP3916846B2 JP3916846B2 JP2000157007A JP2000157007A JP3916846B2 JP 3916846 B2 JP3916846 B2 JP 3916846B2 JP 2000157007 A JP2000157007 A JP 2000157007A JP 2000157007 A JP2000157007 A JP 2000157007A JP 3916846 B2 JP3916846 B2 JP 3916846B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- substrate
- semiconductor substrate
- film thickness
- plating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 title claims description 278
- 239000000758 substrate Substances 0.000 title claims description 119
- 238000000034 method Methods 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 76
- 238000007747 plating Methods 0.000 claims description 39
- 238000004140 cleaning Methods 0.000 claims description 38
- 238000003825 pressing Methods 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 claims description 16
- 239000006061 abrasive grain Substances 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 12
- 238000007517 polishing process Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 93
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 38
- 239000010949 copper Substances 0.000 description 37
- 239000002002 slurry Substances 0.000 description 20
- 239000007788 liquid Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- 230000002378 acidificating effect Effects 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 239000012788 optical film Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000157007A JP3916846B2 (ja) | 2000-05-26 | 2000-05-26 | 基板研磨装置及び基板研磨方法 |
| US09/864,208 US20020023715A1 (en) | 2000-05-26 | 2001-05-25 | Substrate polishing apparatus and substrate polishing mehod |
| US11/806,581 US20070238395A1 (en) | 2000-05-26 | 2007-06-01 | Substrate polishing apparatus and substrate polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000157007A JP3916846B2 (ja) | 2000-05-26 | 2000-05-26 | 基板研磨装置及び基板研磨方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001338902A JP2001338902A (ja) | 2001-12-07 |
| JP2001338902A5 JP2001338902A5 (enExample) | 2005-07-07 |
| JP3916846B2 true JP3916846B2 (ja) | 2007-05-23 |
Family
ID=18661708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000157007A Expired - Fee Related JP3916846B2 (ja) | 2000-05-26 | 2000-05-26 | 基板研磨装置及び基板研磨方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3916846B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3916375B2 (ja) | 2000-06-02 | 2007-05-16 | 株式会社荏原製作所 | ポリッシング方法および装置 |
| JP4698144B2 (ja) | 2003-07-31 | 2011-06-08 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP5744382B2 (ja) * | 2008-07-24 | 2015-07-08 | 株式会社荏原製作所 | 基板処理装置および基板処理方法 |
| KR101958874B1 (ko) | 2008-06-04 | 2019-03-15 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판처리장치, 기판처리방법, 기판 파지기구, 및 기판 파지방법 |
| KR101065168B1 (ko) | 2009-09-09 | 2011-09-16 | 주식회사 아이매스 | 웨이퍼용 회전식 연마장치 |
| CN103367105B (zh) * | 2012-03-26 | 2016-08-10 | 上海华虹宏力半导体制造有限公司 | 一种笔形海绵固定装置 |
| JP6740065B2 (ja) * | 2016-09-13 | 2020-08-12 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板洗浄装置、基板処理装置、基板洗浄方法および基板処理方法 |
| JP2019167520A (ja) * | 2018-03-22 | 2019-10-03 | 住友精化株式会社 | ポリプロピレンカーボネート含有溶液及びポリプロピレンカーボネート含有層、並びに複合部材の製造方法 |
| CN118435332A (zh) * | 2021-11-10 | 2024-08-02 | 弗萨姆材料美国有限责任公司 | 用于后端应用的瓶中垫和单压板化学机械平面化 |
-
2000
- 2000-05-26 JP JP2000157007A patent/JP3916846B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001338902A (ja) | 2001-12-07 |
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