JP3916375B2 - ポリッシング方法および装置 - Google Patents

ポリッシング方法および装置 Download PDF

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Publication number
JP3916375B2
JP3916375B2 JP2000166682A JP2000166682A JP3916375B2 JP 3916375 B2 JP3916375 B2 JP 3916375B2 JP 2000166682 A JP2000166682 A JP 2000166682A JP 2000166682 A JP2000166682 A JP 2000166682A JP 3916375 B2 JP3916375 B2 JP 3916375B2
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JP
Japan
Prior art keywords
polishing
layer
semiconductor wafer
barrier metal
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000166682A
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English (en)
Japanese (ja)
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JP2001345292A (ja
JP2001345292A5 (enExample
Inventor
憲雄 木村
達也 小濱
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Ebara Corp
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Ebara Corp
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Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2000166682A priority Critical patent/JP3916375B2/ja
Priority to US09/870,479 priority patent/US6663469B2/en
Publication of JP2001345292A publication Critical patent/JP2001345292A/ja
Publication of JP2001345292A5 publication Critical patent/JP2001345292A5/ja
Application granted granted Critical
Publication of JP3916375B2 publication Critical patent/JP3916375B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2000166682A 2000-06-02 2000-06-02 ポリッシング方法および装置 Expired - Lifetime JP3916375B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000166682A JP3916375B2 (ja) 2000-06-02 2000-06-02 ポリッシング方法および装置
US09/870,479 US6663469B2 (en) 2000-06-02 2001-06-01 Polishing method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000166682A JP3916375B2 (ja) 2000-06-02 2000-06-02 ポリッシング方法および装置

Publications (3)

Publication Number Publication Date
JP2001345292A JP2001345292A (ja) 2001-12-14
JP2001345292A5 JP2001345292A5 (enExample) 2005-07-14
JP3916375B2 true JP3916375B2 (ja) 2007-05-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000166682A Expired - Lifetime JP3916375B2 (ja) 2000-06-02 2000-06-02 ポリッシング方法および装置

Country Status (2)

Country Link
US (1) US6663469B2 (enExample)
JP (1) JP3916375B2 (enExample)

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US8485862B2 (en) * 2000-05-19 2013-07-16 Applied Materials, Inc. Polishing pad for endpoint detection and related methods
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US6811466B1 (en) * 2001-12-28 2004-11-02 Applied Materials, Inc. System and method for in-line metal profile measurement
US7001242B2 (en) * 2002-02-06 2006-02-21 Applied Materials, Inc. Method and apparatus of eddy current monitoring for chemical mechanical polishing
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US7008296B2 (en) * 2003-06-18 2006-03-07 Applied Materials, Inc. Data processing for monitoring chemical mechanical polishing
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US8657644B2 (en) 2009-07-16 2014-02-25 Ebara Corporation Eddy current sensor and polishing method and apparatus
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US8616935B2 (en) * 2010-06-02 2013-12-31 Applied Materials, Inc. Control of overpolishing of multiple substrates on the same platen in chemical mechanical polishing
JP2011176342A (ja) * 2011-04-11 2011-09-08 Ebara Corp 研磨方法及び配線形成方法
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US9026242B2 (en) 2011-05-19 2015-05-05 Taktia Llc Automatically guided tools
US8728934B2 (en) 2011-06-24 2014-05-20 Tessera, Inc. Systems and methods for producing flat surfaces in interconnect structures
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WO2013163588A1 (en) * 2012-04-26 2013-10-31 Alec Rothmyer Rivers Systems and methods for performing a task on a material, or locating the position of a device relative to the surface of the material
JP2014011408A (ja) * 2012-07-02 2014-01-20 Toshiba Corp 半導体装置の製造方法および研磨装置
JP6456133B2 (ja) * 2014-12-22 2019-01-23 株式会社荏原製作所 基板処理装置
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JP6418174B2 (ja) * 2016-02-03 2018-11-07 株式会社Sumco シリコンウェーハの片面研磨方法
CN106115612B (zh) * 2016-07-11 2017-11-17 中国电子科技集团公司第四十五研究所 一种晶圆平坦化方法
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JP6635088B2 (ja) * 2017-04-24 2020-01-22 信越半導体株式会社 シリコンウエーハの研磨方法
US10967478B2 (en) * 2017-09-29 2021-04-06 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical polishing apparatus and method
TWI845444B (zh) 2018-04-03 2024-06-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
TWI828706B (zh) 2018-06-20 2024-01-11 美商應用材料股份有限公司 用於原位電磁感應監控的基板摻雜補償的方法、電腦程式產品及研磨系統
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JP7179586B2 (ja) * 2018-11-08 2022-11-29 株式会社荏原製作所 渦電流検出装置及び研磨装置
JP7640562B2 (ja) 2020-05-14 2025-03-05 アプライド マテリアルズ インコーポレイテッド 研磨中のインシトゥモニタリングで使用するためのニューラルネットワークをトレーニングするための技術及び研磨システム
CN115038549B (zh) 2020-06-24 2024-03-12 应用材料公司 使用研磨垫磨损补偿的基板层厚度确定
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Also Published As

Publication number Publication date
US20020002029A1 (en) 2002-01-03
JP2001345292A (ja) 2001-12-14
US6663469B2 (en) 2003-12-16

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