JP3913253B2 - 光半導体装置およびその製造方法 - Google Patents

光半導体装置およびその製造方法 Download PDF

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Publication number
JP3913253B2
JP3913253B2 JP2005025210A JP2005025210A JP3913253B2 JP 3913253 B2 JP3913253 B2 JP 3913253B2 JP 2005025210 A JP2005025210 A JP 2005025210A JP 2005025210 A JP2005025210 A JP 2005025210A JP 3913253 B2 JP3913253 B2 JP 3913253B2
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Japan
Prior art keywords
semiconductor film
electrode
substrate
semiconductor device
film
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Expired - Fee Related
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JP2005025210A
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English (en)
Japanese (ja)
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JP2006066864A5 (enExample
JP2006066864A (ja
Inventor
敏彦 尾内
健明 井辻
信太郎 笠井
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005025210A priority Critical patent/JP3913253B2/ja
Priority to PCT/JP2005/014259 priority patent/WO2006011668A1/en
Priority to US10/569,601 priority patent/US7723708B2/en
Priority to EP05768593.5A priority patent/EP1774627B1/en
Priority to CN2010101352550A priority patent/CN101794835B/zh
Publication of JP2006066864A publication Critical patent/JP2006066864A/ja
Publication of JP2006066864A5 publication Critical patent/JP2006066864A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Details Of Aerials (AREA)
JP2005025210A 2004-07-30 2005-02-01 光半導体装置およびその製造方法 Expired - Fee Related JP3913253B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005025210A JP3913253B2 (ja) 2004-07-30 2005-02-01 光半導体装置およびその製造方法
PCT/JP2005/014259 WO2006011668A1 (en) 2004-07-30 2005-07-28 Optical semiconductor device
US10/569,601 US7723708B2 (en) 2004-07-30 2005-07-28 Optical semiconductor device in which an electromagnetic wave is generated in a region of an applied electric field
EP05768593.5A EP1774627B1 (en) 2004-07-30 2005-07-28 Optical semiconductor device
CN2010101352550A CN101794835B (zh) 2004-07-30 2005-07-28 光学半导体器件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004223656 2004-07-30
JP2005025210A JP3913253B2 (ja) 2004-07-30 2005-02-01 光半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2006066864A JP2006066864A (ja) 2006-03-09
JP2006066864A5 JP2006066864A5 (enExample) 2006-08-17
JP3913253B2 true JP3913253B2 (ja) 2007-05-09

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JP2005025210A Expired - Fee Related JP3913253B2 (ja) 2004-07-30 2005-02-01 光半導体装置およびその製造方法

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US (1) US7723708B2 (enExample)
EP (1) EP1774627B1 (enExample)
JP (1) JP3913253B2 (enExample)
CN (1) CN101794835B (enExample)
WO (1) WO2006011668A1 (enExample)

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JP4977048B2 (ja) * 2007-02-01 2012-07-18 キヤノン株式会社 アンテナ素子
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JP5328265B2 (ja) * 2008-08-25 2013-10-30 キヤノン株式会社 テラヘルツ波発生素子、及びテラヘルツ波発生装置
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JP6062640B2 (ja) 2011-03-18 2017-01-18 キヤノン株式会社 光伝導素子
JP5799538B2 (ja) * 2011-03-18 2015-10-28 セイコーエプソン株式会社 テラヘルツ波発生装置、カメラ、イメージング装置、計測装置および光源装置
RU2011140310A (ru) * 2011-09-16 2013-04-10 Конинклейке Филипс Электроникс Н.В. Высокочастотная волоноводная структура
JP5998479B2 (ja) * 2011-12-28 2016-09-28 セイコーエプソン株式会社 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置
KR101700779B1 (ko) * 2012-09-21 2017-01-31 한국전자통신연구원 포토믹서 및 그의 제조방법
JP2014207654A (ja) * 2013-03-16 2014-10-30 キヤノン株式会社 導波路素子
KR20140147376A (ko) * 2013-06-19 2014-12-30 삼성전자주식회사 적층형 컬러-깊이 센서 및 이를 채용한 3차원 영상 획득 장치
FR3030954A1 (fr) * 2014-12-17 2016-06-24 Thales Sa Composant optoelectronique pour generer et rayonner un signal hyperfrequence
JP2017156213A (ja) * 2016-03-02 2017-09-07 パイオニア株式会社 電磁波計測装置
EP3220113B1 (en) * 2016-03-16 2019-05-01 Centre National de la Recherche Scientifique - CNRS - Optomechanical transducer for terahertz electromagnetic waves
JP6705672B2 (ja) * 2016-03-17 2020-06-03 パイオニア株式会社 電磁波計測装置
TWI786599B (zh) * 2021-04-15 2022-12-11 國立高雄科技大學 角型反射的高速光二極體結構

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Also Published As

Publication number Publication date
EP1774627A4 (en) 2010-11-03
CN101794835A (zh) 2010-08-04
US7723708B2 (en) 2010-05-25
EP1774627B1 (en) 2015-06-17
US20080217538A1 (en) 2008-09-11
CN101794835B (zh) 2012-05-30
WO2006011668A1 (en) 2006-02-02
EP1774627A1 (en) 2007-04-18
JP2006066864A (ja) 2006-03-09

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