JP3912761B2 - 遠紫外線露光用ポジ型フォトレジスト組成物 - Google Patents

遠紫外線露光用ポジ型フォトレジスト組成物 Download PDF

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Publication number
JP3912761B2
JP3912761B2 JP03020999A JP3020999A JP3912761B2 JP 3912761 B2 JP3912761 B2 JP 3912761B2 JP 03020999 A JP03020999 A JP 03020999A JP 3020999 A JP3020999 A JP 3020999A JP 3912761 B2 JP3912761 B2 JP 3912761B2
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Japan
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group
acid
carbon atoms
alicyclic hydrocarbon
alkyl group
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JP03020999A
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English (en)
Japanese (ja)
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JP2000227659A5 (OSRAM
JP2000227659A (ja
Inventor
健一郎 佐藤
秀和 大橋
利明 青合
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP03020999A priority Critical patent/JP3912761B2/ja
Priority to US09/456,827 priority patent/US6576392B1/en
Priority to KR1019990055067A priority patent/KR100610165B1/ko
Publication of JP2000227659A publication Critical patent/JP2000227659A/ja
Publication of JP2000227659A5 publication Critical patent/JP2000227659A5/ja
Application granted granted Critical
Publication of JP3912761B2 publication Critical patent/JP3912761B2/ja
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Expired - Lifetime legal-status Critical Current

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  • Materials For Photolithography (AREA)
JP03020999A 1996-12-07 1999-02-08 遠紫外線露光用ポジ型フォトレジスト組成物 Expired - Lifetime JP3912761B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP03020999A JP3912761B2 (ja) 1999-02-08 1999-02-08 遠紫外線露光用ポジ型フォトレジスト組成物
US09/456,827 US6576392B1 (en) 1996-12-07 1999-12-06 Positive photoresist composition
KR1019990055067A KR100610165B1 (ko) 1998-12-07 1999-12-06 포지티브 포토레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03020999A JP3912761B2 (ja) 1999-02-08 1999-02-08 遠紫外線露光用ポジ型フォトレジスト組成物

Publications (3)

Publication Number Publication Date
JP2000227659A JP2000227659A (ja) 2000-08-15
JP2000227659A5 JP2000227659A5 (OSRAM) 2005-07-07
JP3912761B2 true JP3912761B2 (ja) 2007-05-09

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JP03020999A Expired - Lifetime JP3912761B2 (ja) 1996-12-07 1999-02-08 遠紫外線露光用ポジ型フォトレジスト組成物

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JP (1) JP3912761B2 (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8808961B2 (en) 2009-10-30 2014-08-19 Fujifilm Corporation Composition, resist film, pattern forming method, and inkjet recording method
US9223208B2 (en) 2011-12-29 2015-12-29 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001030739A1 (en) * 1999-10-27 2001-05-03 Daicel Chemical Industries, Ltd. Process for the production of adamantyl (meth)acrylates
JP2002006483A (ja) * 2000-06-20 2002-01-09 Sumitomo Chem Co Ltd フォトレジスト組成物
JP2002156750A (ja) * 2000-11-20 2002-05-31 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP4966796B2 (ja) * 2007-09-21 2012-07-04 富士フイルム株式会社 ポジ型レジスト組成物、該ポジ型レジスト組成物を用いたパターン形成方法及び該ポジ型レジスト組成物に用いられる化合物
JP5162293B2 (ja) * 2008-03-21 2013-03-13 富士フイルム株式会社 電子線、x線又はeuv光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
EP2450746A1 (en) * 2007-08-10 2012-05-09 Fujifilm Corporation Positive resist composition and pattern forming method using the composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8808961B2 (en) 2009-10-30 2014-08-19 Fujifilm Corporation Composition, resist film, pattern forming method, and inkjet recording method
US9223208B2 (en) 2011-12-29 2015-12-29 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition

Also Published As

Publication number Publication date
JP2000227659A (ja) 2000-08-15

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