JP3909818B2 - ポジ型レジスト組成物 - Google Patents
ポジ型レジスト組成物 Download PDFInfo
- Publication number
- JP3909818B2 JP3909818B2 JP2001346121A JP2001346121A JP3909818B2 JP 3909818 B2 JP3909818 B2 JP 3909818B2 JP 2001346121 A JP2001346121 A JP 2001346121A JP 2001346121 A JP2001346121 A JP 2001346121A JP 3909818 B2 JP3909818 B2 JP 3909818B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- acid
- fluorine atom
- substituted
- resist composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 0 Cc1c(C)c(*)c(C)c(C)c1* Chemical compound Cc1c(C)c(*)c(C)c(C)c1* 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Cc1ccccc1 Chemical compound Cc1ccccc1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 2
- VVBXLDANJCKWTO-UHFFFAOYSA-N C(C=CC=C1)C1=S(c1ccccc1)c1ccccc1 Chemical compound C(C=CC=C1)C1=S(c1ccccc1)c1ccccc1 VVBXLDANJCKWTO-UHFFFAOYSA-N 0.000 description 1
- KIOLOPDZCNDWNX-UHFFFAOYSA-N CC(C)(C)c(cc1)ccc1[S+](c1ccccc1)c1ccc(C(C)(C)C)cc1 Chemical compound CC(C)(C)c(cc1)ccc1[S+](c1ccccc1)c1ccc(C(C)(C)C)cc1 KIOLOPDZCNDWNX-UHFFFAOYSA-N 0.000 description 1
- UCUOYRRNYRXIJU-UHFFFAOYSA-N C[S](c(c(F)c(c(F)c1F)F)c1F)(O)(=O)=O Chemical compound C[S](c(c(F)c(c(F)c1F)F)c1F)(O)(=O)=O UCUOYRRNYRXIJU-UHFFFAOYSA-N 0.000 description 1
- IHZSUEZRYPPLJU-UHFFFAOYSA-N C[S](c(cc(c([Br]=C)c1)F)c1F)(O)(=O)=O Chemical compound C[S](c(cc(c([Br]=C)c1)F)c1F)(O)(=O)=O IHZSUEZRYPPLJU-UHFFFAOYSA-N 0.000 description 1
- KDVLDBQJWXYOJT-UHFFFAOYSA-N C[S](c1cc(C(F)(F)F)ccc1)(O)(=O)=O Chemical compound C[S](c1cc(C(F)(F)F)ccc1)(O)(=O)=O KDVLDBQJWXYOJT-UHFFFAOYSA-N 0.000 description 1
- RAHPHBZJFQVXPV-UHFFFAOYSA-N C[S](c1ccc(C(F)(F)F)cc1[N+]([O-])=O)(O)(=O)=O Chemical compound C[S](c1ccc(C(F)(F)F)cc1[N+]([O-])=O)(O)(=O)=O RAHPHBZJFQVXPV-UHFFFAOYSA-N 0.000 description 1
- CHLICZRVGGXEOD-UHFFFAOYSA-N Cc(cc1)ccc1OC Chemical compound Cc(cc1)ccc1OC CHLICZRVGGXEOD-UHFFFAOYSA-N 0.000 description 1
- INAMOCMXJDREKL-UHFFFAOYSA-N Cc(cc1)ccc1[S+](c1ccccc1)c1ccc(C)cc1 Chemical compound Cc(cc1)ccc1[S+](c1ccccc1)c1ccc(C)cc1 INAMOCMXJDREKL-UHFFFAOYSA-N 0.000 description 1
- UOWZJVJTAULTGI-UHFFFAOYSA-N Cc(cc1)ccc1[S](C)(O)(=O)=O Chemical compound Cc(cc1)ccc1[S](C)(O)(=O)=O UOWZJVJTAULTGI-UHFFFAOYSA-N 0.000 description 1
- AAOFYZYSGOUVOB-UHFFFAOYSA-N Cc(cc1C)cc(C)c1[SiH](c1ccccc1)c1cccc(C2=CCC2)c1 Chemical compound Cc(cc1C)cc(C)c1[SiH](c1ccccc1)c1cccc(C2=CCC2)c1 AAOFYZYSGOUVOB-UHFFFAOYSA-N 0.000 description 1
- AKQNYQDSIDKVJZ-UHFFFAOYSA-N c(cc1)ccc1[SiH](c1ccccc1)c1ccccc1 Chemical compound c(cc1)ccc1[SiH](c1ccccc1)c1ccccc1 AKQNYQDSIDKVJZ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001346121A JP3909818B2 (ja) | 2001-11-12 | 2001-11-12 | ポジ型レジスト組成物 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001346121A JP3909818B2 (ja) | 2001-11-12 | 2001-11-12 | ポジ型レジスト組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003149800A JP2003149800A (ja) | 2003-05-21 |
| JP2003149800A5 JP2003149800A5 (OSRAM) | 2005-04-07 |
| JP3909818B2 true JP3909818B2 (ja) | 2007-04-25 |
Family
ID=19159349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001346121A Expired - Lifetime JP3909818B2 (ja) | 2001-11-12 | 2001-11-12 | ポジ型レジスト組成物 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3909818B2 (OSRAM) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4399192B2 (ja) | 2003-06-03 | 2010-01-13 | 富士フイルム株式会社 | 感光性組成物 |
| US7449573B2 (en) | 2004-02-16 | 2008-11-11 | Fujifilm Corporation | Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition |
| JP4491335B2 (ja) * | 2004-02-16 | 2010-06-30 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
| JP2005275072A (ja) * | 2004-03-25 | 2005-10-06 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| US7541131B2 (en) | 2005-02-18 | 2009-06-02 | Fujifilm Corporation | Resist composition, compound for use in the resist composition and pattern forming method using the resist composition |
| JP4505357B2 (ja) * | 2005-03-16 | 2010-07-21 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
| JP4617252B2 (ja) * | 2005-12-22 | 2011-01-19 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4958584B2 (ja) * | 2006-02-28 | 2012-06-20 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4996898B2 (ja) * | 2006-03-27 | 2012-08-08 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
| US7851130B2 (en) | 2006-09-19 | 2010-12-14 | Fujifilm Corporation | Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition |
| EP1906241A1 (en) | 2006-09-29 | 2008-04-02 | FUJIFILM Corporation | Resist composition and pattern forming method using the same |
| JP2009053665A (ja) * | 2007-08-02 | 2009-03-12 | Fujifilm Corp | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| JP5066405B2 (ja) * | 2007-08-02 | 2012-11-07 | 富士フイルム株式会社 | 電子線、ｘ線又はｅｕｖ用レジスト組成物及び該組成物を用いたパターン形成方法 |
| JP5850863B2 (ja) | 2010-02-24 | 2016-02-03 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 潜在性酸及びそれらの使用 |
| JP5658924B2 (ja) | 2010-06-29 | 2015-01-28 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びに、該組成物を用いたレジスト膜及びパターン形成方法 |
| JP5763433B2 (ja) * | 2010-06-29 | 2015-08-12 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| JP5953670B2 (ja) * | 2010-08-27 | 2016-07-20 | 住友化学株式会社 | 塩、レジスト組成物及びレジストパターンの製造方法 |
| US9081277B2 (en) | 2010-12-24 | 2015-07-14 | Fujifilm Corporation | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition |
| JP5746907B2 (ja) * | 2011-04-28 | 2015-07-08 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物並びに該組成物を用いたレジスト膜及びパターン形成方法 |
| JP5812030B2 (ja) * | 2013-03-13 | 2015-11-11 | 信越化学工業株式会社 | スルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法 |
| JP5789705B2 (ja) * | 2014-06-16 | 2015-10-07 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法 |
| EP3253735B1 (en) | 2015-02-02 | 2021-03-31 | Basf Se | Latent acids and their use |
| US20160306278A1 (en) * | 2015-04-20 | 2016-10-20 | Tokyo Ohka Kogyo Co., Ltd. | Chemical for photolithography with improved liquid transfer property and resist composition comprising the same |
| JP7284622B2 (ja) * | 2018-04-25 | 2023-05-31 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL96545C (OSRAM) * | 1954-03-12 | 1900-01-01 | ||
| GB8333901D0 (en) * | 1983-12-20 | 1984-02-01 | Minnesota Mining & Mfg | Radiationsensitive compositions |
| JP3300089B2 (ja) * | 1993-02-15 | 2002-07-08 | クラリアント インターナショナル リミテッド | ポジ型放射感応性混合物 |
| JP3778391B2 (ja) * | 1997-03-31 | 2006-05-24 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
| JP2000053601A (ja) * | 1998-08-07 | 2000-02-22 | Toyo Gosei Kogyo Kk | 新規オニウム塩およびそれを含有する感放射性樹脂組成物 |
-
2001
- 2001-11-12 JP JP2001346121A patent/JP3909818B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003149800A (ja) | 2003-05-21 |
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