JP3894622B2 - 異なるしきい値電圧を持つトランジスタを用いたダイナミック論理回路 - Google Patents

異なるしきい値電圧を持つトランジスタを用いたダイナミック論理回路 Download PDF

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JP3894622B2
JP3894622B2 JP19610697A JP19610697A JP3894622B2 JP 3894622 B2 JP3894622 B2 JP 3894622B2 JP 19610697 A JP19610697 A JP 19610697A JP 19610697 A JP19610697 A JP 19610697A JP 3894622 B2 JP3894622 B2 JP 3894622B2
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transistor
precharge
circuit
threshold voltage
phase
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JPH10107613A (ja
JPH10107613A5 (enExample
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ダブリュ.ボスハート パトリック
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テキサス インスツルメンツ インコーポレイテツド
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096Synchronous circuits, i.e. using clock signals
    • H03K19/0963Synchronous circuits, i.e. using clock signals using transistors of complementary type
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00346Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
JP19610697A 1996-07-19 1997-07-22 異なるしきい値電圧を持つトランジスタを用いたダイナミック論理回路 Expired - Lifetime JP3894622B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US687800 1996-07-19
US08/687,800 US5831451A (en) 1996-07-19 1996-07-19 Dynamic logic circuits using transistors having differing threshold voltages

Publications (3)

Publication Number Publication Date
JPH10107613A JPH10107613A (ja) 1998-04-24
JPH10107613A5 JPH10107613A5 (enExample) 2005-05-26
JP3894622B2 true JP3894622B2 (ja) 2007-03-22

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JP19610697A Expired - Lifetime JP3894622B2 (ja) 1996-07-19 1997-07-22 異なるしきい値電圧を持つトランジスタを用いたダイナミック論理回路

Country Status (6)

Country Link
US (1) US5831451A (enExample)
EP (1) EP0820147B1 (enExample)
JP (1) JP3894622B2 (enExample)
KR (1) KR100484460B1 (enExample)
AT (1) ATE279046T1 (enExample)
DE (1) DE69731035T2 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3451579B2 (ja) * 1997-03-03 2003-09-29 日本電信電話株式会社 自己同期型パイプラインデータパス回路
US5910735A (en) * 1997-05-22 1999-06-08 International Business Machines Corporation Method and apparatus for safe mode in dynamic logic using dram cell
US6049231A (en) * 1997-07-21 2000-04-11 Texas Instruments Incorporated Dynamic multiplexer circuits, systems, and methods having three signal inversions from input to output
US6009037A (en) * 1997-09-25 1999-12-28 Texas Instruments Incorporated Dynamic logic memory addressing circuits, systems, and methods with reduced capacitively loaded predecoders
US6021087A (en) * 1997-09-25 2000-02-01 Texas Instruments Incorporated Dynamic logic memory addressing circuits, systems, and methods with decoder fan out greater than 2:1
US5982702A (en) * 1997-09-25 1999-11-09 Texas Instruments Incorporated Dynamic logic memory addressing circuits, systems, and methods with predecoders providing data and precharge control to decoders
JP3299151B2 (ja) * 1997-11-05 2002-07-08 日本電気株式会社 バス入出力回路及びそれを用いたバス入出力システム
US6090153A (en) * 1997-12-05 2000-07-18 International Business Machines Corporation Multi-threshold-voltage differential cascode voltage switch (DCVS) circuits
US6269461B1 (en) * 1998-04-27 2001-07-31 International Business Machines Corporation Testing method for dynamic logic keeper device
US6266800B1 (en) * 1999-01-29 2001-07-24 International Business Machines Corporation System and method for eliminating effects of parasitic bipolar transistor action in dynamic logic using setup time determination
US6365934B1 (en) 1999-01-29 2002-04-02 International Business Machines Corporation Method and apparatus for elimination of parasitic bipolar action in complementary oxide semiconductor (CMOS) silicon on insulator (SOI) circuits
US6188247B1 (en) * 1999-01-29 2001-02-13 International Business Machines Corporation Method and apparatus for elimination of parasitic bipolar action in logic circuits for history removal under stack contention including complementary oxide semiconductor (CMOS) silicon on insulator (SOI) elements
US6278157B1 (en) 1999-01-29 2001-08-21 International Business Machines Corporation Method and apparatus for elimination of parasitic bipolar action in logic circuits including complementary oxide semiconductor (CMOS) silicon on insulator (SOI) elements
US6262615B1 (en) 1999-02-25 2001-07-17 Infineon Technologies Ag Dynamic logic circuit
EP1028434A1 (en) * 1999-02-11 2000-08-16 Infineon Technologies North America Corp. Dynamic logic circuit
US6242952B1 (en) * 1999-09-24 2001-06-05 Texas Instruments Incorporated Inverting hold time latch circuits, systems, and methods
US6344759B1 (en) * 1999-10-18 2002-02-05 Texas Instruments Incorporated Hybrid data and clock recharging techniques in domino logic circuits minimizes charge sharing during evaluation
US6552573B1 (en) * 2000-01-10 2003-04-22 Texas Instruments Incorporated System and method for reducing leakage current in dynamic circuits with low threshold voltage transistors
US6466057B1 (en) * 2000-01-21 2002-10-15 Hewlett-Packard Company Feedback-induced pseudo-NMOS static (FIPNS) logic gate and method
US6433587B1 (en) 2000-03-17 2002-08-13 International Business Machines Corporation SOI CMOS dynamic circuits having threshold voltage control
US7149674B1 (en) * 2000-05-30 2006-12-12 Freescale Semiconductor, Inc. Methods for analyzing integrated circuits and apparatus therefor
US6369606B1 (en) * 2000-09-27 2002-04-09 International Business Machines Corporation Mixed threshold voltage CMOS logic device and method of manufacture therefor
US6462582B1 (en) 2001-06-12 2002-10-08 Micron Technology, Inc. Clocked pass transistor and complementary pass transistor logic circuits
US6668357B2 (en) * 2001-06-29 2003-12-23 Fujitsu Limited Cold clock power reduction
US6621305B2 (en) * 2001-08-03 2003-09-16 Hewlett-Packard Development Company, L.P. Partial swing low power CMOS logic circuits
US6842046B2 (en) 2002-01-31 2005-01-11 Fujitsu Limited Low-to-high voltage conversion method and system
US6933744B2 (en) * 2002-06-11 2005-08-23 The Regents Of The University Of Michigan Low-leakage integrated circuits and dynamic logic circuits
US6774683B2 (en) * 2002-08-13 2004-08-10 Analog Devices, Inc. Control loop for minimal tailnode excursion of differential switches
US6708312B1 (en) * 2002-08-22 2004-03-16 Silicon Integrated Systems Corp. Method for multi-threshold voltage CMOS process optimization
JP4052923B2 (ja) * 2002-10-25 2008-02-27 株式会社ルネサステクノロジ 半導体装置
US6819152B1 (en) * 2003-07-30 2004-11-16 National Semiconductor Corporation Circuitry for reducing leakage currents in a pre-charge circuit using very small MOSFET devices
JP4606810B2 (ja) * 2003-08-20 2011-01-05 パナソニック株式会社 半導体集積回路
US8247840B2 (en) * 2004-07-07 2012-08-21 Semi Solutions, Llc Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diode
US7898297B2 (en) * 2005-01-04 2011-03-01 Semi Solution, Llc Method and apparatus for dynamic threshold voltage control of MOS transistors in dynamic logic circuits
US7265589B2 (en) * 2005-06-28 2007-09-04 International Business Machines Corporation Independent gate control logic circuitry
JP4967264B2 (ja) * 2005-07-11 2012-07-04 株式会社日立製作所 半導体装置
US7863689B2 (en) * 2006-09-19 2011-01-04 Semi Solutions, Llc. Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistor
KR100951102B1 (ko) 2008-01-24 2010-04-07 명지대학교 산학협력단 Mtcmos 회로를 구비한 동적 논리 회로 및 동적 논리회로의 인버터
CN102098041A (zh) * 2010-12-06 2011-06-15 北京邮电大学 一种线性系统可重构逻辑门电路
JP6474280B2 (ja) * 2014-03-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
TWI888172B (zh) * 2024-06-14 2025-06-21 世界先進積體電路股份有限公司 邏輯電路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4107548A (en) * 1976-03-05 1978-08-15 Hitachi, Ltd. Ratioless type MIS logic circuit
JPS5587471A (en) * 1978-12-26 1980-07-02 Fujitsu Ltd Mos dynamic circuit
US4430583A (en) * 1981-10-30 1984-02-07 Bell Telephone Laboratories, Incorporated Apparatus for increasing the speed of a circuit having a string of IGFETs
US5459693A (en) * 1990-06-14 1995-10-17 Creative Integrated Systems, Inc. Very large scale integrated planar read only memory
US5247212A (en) * 1991-01-31 1993-09-21 Thunderbird Technologies, Inc. Complementary logic input parallel (clip) logic circuit family
JP3110129B2 (ja) * 1992-03-03 2000-11-20 日本電気株式会社 Cmosインバータ回路
KR100281600B1 (ko) * 1993-01-07 2001-03-02 가나이 쓰도무 전력저감 기구를 가지는 반도체 집적회로
JPH06208790A (ja) * 1993-01-12 1994-07-26 Toshiba Corp 半導体装置
US5440243A (en) * 1993-09-21 1995-08-08 Apple Computer, Inc. Apparatus and method for allowing a dynamic logic gate to operation statically using subthreshold conduction precharging
US5483181A (en) * 1994-12-16 1996-01-09 Sun Microsystems, Inc. Dynamic logic circuit with reduced charge leakage
US5602497A (en) * 1995-12-20 1997-02-11 Thomas; Steven D. Precharged adiabatic pipelined logic

Also Published As

Publication number Publication date
EP0820147B1 (en) 2004-10-06
DE69731035T2 (de) 2006-02-23
KR980012921A (ko) 1998-04-30
DE69731035D1 (de) 2004-11-11
ATE279046T1 (de) 2004-10-15
EP0820147A3 (en) 1999-07-21
JPH10107613A (ja) 1998-04-24
EP0820147A2 (en) 1998-01-21
KR100484460B1 (ko) 2005-09-08
US5831451A (en) 1998-11-03

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