DE69731035T2 - Dynamische logische Schaltung - Google Patents
Dynamische logische Schaltung Download PDFInfo
- Publication number
- DE69731035T2 DE69731035T2 DE69731035T DE69731035T DE69731035T2 DE 69731035 T2 DE69731035 T2 DE 69731035T2 DE 69731035 T DE69731035 T DE 69731035T DE 69731035 T DE69731035 T DE 69731035T DE 69731035 T2 DE69731035 T2 DE 69731035T2
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- precharge
- phase
- threshold voltage
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000011156 evaluation Methods 0.000 claims description 111
- 230000004044 response Effects 0.000 claims description 27
- 230000000903 blocking effect Effects 0.000 claims description 12
- 238000002513 implantation Methods 0.000 claims description 7
- 230000003068 static effect Effects 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 230000003750 conditioning effect Effects 0.000 claims 1
- 230000007704 transition Effects 0.000 description 49
- 238000013500 data storage Methods 0.000 description 44
- 230000000295 complement effect Effects 0.000 description 41
- 238000000034 method Methods 0.000 description 35
- 230000008901 benefit Effects 0.000 description 29
- 230000002829 reductive effect Effects 0.000 description 23
- 238000010586 diagram Methods 0.000 description 17
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 238000007599 discharging Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 238000013459 approach Methods 0.000 description 7
- 230000006872 improvement Effects 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000000670 limiting effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000008186 active pharmaceutical agent Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000012854 evaluation process Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000000977 initiatory effect Effects 0.000 description 4
- 230000002035 prolonged effect Effects 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 230000036316 preload Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- 230000029305 taxis Effects 0.000 description 1
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- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/096—Synchronous circuits, i.e. using clock signals
- H03K19/0963—Synchronous circuits, i.e. using clock signals using transistors of complementary type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
- H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US687800 | 1996-07-19 | ||
| US08/687,800 US5831451A (en) | 1996-07-19 | 1996-07-19 | Dynamic logic circuits using transistors having differing threshold voltages |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69731035D1 DE69731035D1 (de) | 2004-11-11 |
| DE69731035T2 true DE69731035T2 (de) | 2006-02-23 |
Family
ID=24761899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69731035T Expired - Lifetime DE69731035T2 (de) | 1996-07-19 | 1997-07-17 | Dynamische logische Schaltung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5831451A (enExample) |
| EP (1) | EP0820147B1 (enExample) |
| JP (1) | JP3894622B2 (enExample) |
| KR (1) | KR100484460B1 (enExample) |
| AT (1) | ATE279046T1 (enExample) |
| DE (1) | DE69731035T2 (enExample) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3451579B2 (ja) * | 1997-03-03 | 2003-09-29 | 日本電信電話株式会社 | 自己同期型パイプラインデータパス回路 |
| US5910735A (en) * | 1997-05-22 | 1999-06-08 | International Business Machines Corporation | Method and apparatus for safe mode in dynamic logic using dram cell |
| US6049231A (en) * | 1997-07-21 | 2000-04-11 | Texas Instruments Incorporated | Dynamic multiplexer circuits, systems, and methods having three signal inversions from input to output |
| US6009037A (en) * | 1997-09-25 | 1999-12-28 | Texas Instruments Incorporated | Dynamic logic memory addressing circuits, systems, and methods with reduced capacitively loaded predecoders |
| US6021087A (en) * | 1997-09-25 | 2000-02-01 | Texas Instruments Incorporated | Dynamic logic memory addressing circuits, systems, and methods with decoder fan out greater than 2:1 |
| US5982702A (en) * | 1997-09-25 | 1999-11-09 | Texas Instruments Incorporated | Dynamic logic memory addressing circuits, systems, and methods with predecoders providing data and precharge control to decoders |
| JP3299151B2 (ja) * | 1997-11-05 | 2002-07-08 | 日本電気株式会社 | バス入出力回路及びそれを用いたバス入出力システム |
| US6090153A (en) * | 1997-12-05 | 2000-07-18 | International Business Machines Corporation | Multi-threshold-voltage differential cascode voltage switch (DCVS) circuits |
| US6269461B1 (en) * | 1998-04-27 | 2001-07-31 | International Business Machines Corporation | Testing method for dynamic logic keeper device |
| US6266800B1 (en) * | 1999-01-29 | 2001-07-24 | International Business Machines Corporation | System and method for eliminating effects of parasitic bipolar transistor action in dynamic logic using setup time determination |
| US6365934B1 (en) | 1999-01-29 | 2002-04-02 | International Business Machines Corporation | Method and apparatus for elimination of parasitic bipolar action in complementary oxide semiconductor (CMOS) silicon on insulator (SOI) circuits |
| US6188247B1 (en) * | 1999-01-29 | 2001-02-13 | International Business Machines Corporation | Method and apparatus for elimination of parasitic bipolar action in logic circuits for history removal under stack contention including complementary oxide semiconductor (CMOS) silicon on insulator (SOI) elements |
| US6278157B1 (en) | 1999-01-29 | 2001-08-21 | International Business Machines Corporation | Method and apparatus for elimination of parasitic bipolar action in logic circuits including complementary oxide semiconductor (CMOS) silicon on insulator (SOI) elements |
| US6262615B1 (en) | 1999-02-25 | 2001-07-17 | Infineon Technologies Ag | Dynamic logic circuit |
| EP1028434A1 (en) * | 1999-02-11 | 2000-08-16 | Infineon Technologies North America Corp. | Dynamic logic circuit |
| US6242952B1 (en) * | 1999-09-24 | 2001-06-05 | Texas Instruments Incorporated | Inverting hold time latch circuits, systems, and methods |
| US6344759B1 (en) * | 1999-10-18 | 2002-02-05 | Texas Instruments Incorporated | Hybrid data and clock recharging techniques in domino logic circuits minimizes charge sharing during evaluation |
| US6552573B1 (en) * | 2000-01-10 | 2003-04-22 | Texas Instruments Incorporated | System and method for reducing leakage current in dynamic circuits with low threshold voltage transistors |
| US6466057B1 (en) * | 2000-01-21 | 2002-10-15 | Hewlett-Packard Company | Feedback-induced pseudo-NMOS static (FIPNS) logic gate and method |
| US6433587B1 (en) | 2000-03-17 | 2002-08-13 | International Business Machines Corporation | SOI CMOS dynamic circuits having threshold voltage control |
| US7149674B1 (en) * | 2000-05-30 | 2006-12-12 | Freescale Semiconductor, Inc. | Methods for analyzing integrated circuits and apparatus therefor |
| US6369606B1 (en) * | 2000-09-27 | 2002-04-09 | International Business Machines Corporation | Mixed threshold voltage CMOS logic device and method of manufacture therefor |
| US6462582B1 (en) | 2001-06-12 | 2002-10-08 | Micron Technology, Inc. | Clocked pass transistor and complementary pass transistor logic circuits |
| US6668357B2 (en) * | 2001-06-29 | 2003-12-23 | Fujitsu Limited | Cold clock power reduction |
| US6621305B2 (en) * | 2001-08-03 | 2003-09-16 | Hewlett-Packard Development Company, L.P. | Partial swing low power CMOS logic circuits |
| US6842046B2 (en) | 2002-01-31 | 2005-01-11 | Fujitsu Limited | Low-to-high voltage conversion method and system |
| US6933744B2 (en) * | 2002-06-11 | 2005-08-23 | The Regents Of The University Of Michigan | Low-leakage integrated circuits and dynamic logic circuits |
| US6774683B2 (en) * | 2002-08-13 | 2004-08-10 | Analog Devices, Inc. | Control loop for minimal tailnode excursion of differential switches |
| US6708312B1 (en) * | 2002-08-22 | 2004-03-16 | Silicon Integrated Systems Corp. | Method for multi-threshold voltage CMOS process optimization |
| JP4052923B2 (ja) * | 2002-10-25 | 2008-02-27 | 株式会社ルネサステクノロジ | 半導体装置 |
| US6819152B1 (en) * | 2003-07-30 | 2004-11-16 | National Semiconductor Corporation | Circuitry for reducing leakage currents in a pre-charge circuit using very small MOSFET devices |
| JP4606810B2 (ja) * | 2003-08-20 | 2011-01-05 | パナソニック株式会社 | 半導体集積回路 |
| US8247840B2 (en) * | 2004-07-07 | 2012-08-21 | Semi Solutions, Llc | Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diode |
| US7898297B2 (en) * | 2005-01-04 | 2011-03-01 | Semi Solution, Llc | Method and apparatus for dynamic threshold voltage control of MOS transistors in dynamic logic circuits |
| US7265589B2 (en) * | 2005-06-28 | 2007-09-04 | International Business Machines Corporation | Independent gate control logic circuitry |
| JP4967264B2 (ja) * | 2005-07-11 | 2012-07-04 | 株式会社日立製作所 | 半導体装置 |
| US7863689B2 (en) * | 2006-09-19 | 2011-01-04 | Semi Solutions, Llc. | Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistor |
| KR100951102B1 (ko) | 2008-01-24 | 2010-04-07 | 명지대학교 산학협력단 | Mtcmos 회로를 구비한 동적 논리 회로 및 동적 논리회로의 인버터 |
| CN102098041A (zh) * | 2010-12-06 | 2011-06-15 | 北京邮电大学 | 一种线性系统可重构逻辑门电路 |
| JP6474280B2 (ja) * | 2014-03-05 | 2019-02-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI888172B (zh) * | 2024-06-14 | 2025-06-21 | 世界先進積體電路股份有限公司 | 邏輯電路 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4107548A (en) * | 1976-03-05 | 1978-08-15 | Hitachi, Ltd. | Ratioless type MIS logic circuit |
| JPS5587471A (en) * | 1978-12-26 | 1980-07-02 | Fujitsu Ltd | Mos dynamic circuit |
| US4430583A (en) * | 1981-10-30 | 1984-02-07 | Bell Telephone Laboratories, Incorporated | Apparatus for increasing the speed of a circuit having a string of IGFETs |
| US5459693A (en) * | 1990-06-14 | 1995-10-17 | Creative Integrated Systems, Inc. | Very large scale integrated planar read only memory |
| US5247212A (en) * | 1991-01-31 | 1993-09-21 | Thunderbird Technologies, Inc. | Complementary logic input parallel (clip) logic circuit family |
| JP3110129B2 (ja) * | 1992-03-03 | 2000-11-20 | 日本電気株式会社 | Cmosインバータ回路 |
| KR100281600B1 (ko) * | 1993-01-07 | 2001-03-02 | 가나이 쓰도무 | 전력저감 기구를 가지는 반도체 집적회로 |
| JPH06208790A (ja) * | 1993-01-12 | 1994-07-26 | Toshiba Corp | 半導体装置 |
| US5440243A (en) * | 1993-09-21 | 1995-08-08 | Apple Computer, Inc. | Apparatus and method for allowing a dynamic logic gate to operation statically using subthreshold conduction precharging |
| US5483181A (en) * | 1994-12-16 | 1996-01-09 | Sun Microsystems, Inc. | Dynamic logic circuit with reduced charge leakage |
| US5602497A (en) * | 1995-12-20 | 1997-02-11 | Thomas; Steven D. | Precharged adiabatic pipelined logic |
-
1996
- 1996-07-19 US US08/687,800 patent/US5831451A/en not_active Expired - Lifetime
-
1997
- 1997-07-17 AT AT97305362T patent/ATE279046T1/de not_active IP Right Cessation
- 1997-07-17 DE DE69731035T patent/DE69731035T2/de not_active Expired - Lifetime
- 1997-07-17 EP EP97305362A patent/EP0820147B1/en not_active Expired - Lifetime
- 1997-07-18 KR KR1019970033463A patent/KR100484460B1/ko not_active Expired - Lifetime
- 1997-07-22 JP JP19610697A patent/JP3894622B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0820147B1 (en) | 2004-10-06 |
| KR980012921A (ko) | 1998-04-30 |
| DE69731035D1 (de) | 2004-11-11 |
| ATE279046T1 (de) | 2004-10-15 |
| EP0820147A3 (en) | 1999-07-21 |
| JP3894622B2 (ja) | 2007-03-22 |
| JPH10107613A (ja) | 1998-04-24 |
| EP0820147A2 (en) | 1998-01-21 |
| KR100484460B1 (ko) | 2005-09-08 |
| US5831451A (en) | 1998-11-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |