DE68917801T2 - Spannungsversorgungsschalter. - Google Patents

Spannungsversorgungsschalter.

Info

Publication number
DE68917801T2
DE68917801T2 DE68917801T DE68917801T DE68917801T2 DE 68917801 T2 DE68917801 T2 DE 68917801T2 DE 68917801 T DE68917801 T DE 68917801T DE 68917801 T DE68917801 T DE 68917801T DE 68917801 T2 DE68917801 T2 DE 68917801T2
Authority
DE
Germany
Prior art keywords
power switch
switch
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917801T
Other languages
English (en)
Other versions
DE68917801D1 (de
Inventor
Akira B- Takiba
Hiroyoshi Murata
Yasoji Suzuki
Isao Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of DE68917801D1 publication Critical patent/DE68917801D1/de
Application granted granted Critical
Publication of DE68917801T2 publication Critical patent/DE68917801T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
DE68917801T 1988-06-16 1989-06-15 Spannungsversorgungsschalter. Expired - Fee Related DE68917801T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63149156A JPH01317022A (ja) 1988-06-16 1988-06-16 電源切り換え回路

Publications (2)

Publication Number Publication Date
DE68917801D1 DE68917801D1 (de) 1994-10-06
DE68917801T2 true DE68917801T2 (de) 1995-02-16

Family

ID=15469015

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917801T Expired - Fee Related DE68917801T2 (de) 1988-06-16 1989-06-15 Spannungsversorgungsschalter.

Country Status (5)

Country Link
US (1) US4988894A (de)
EP (1) EP0346898B1 (de)
JP (1) JPH01317022A (de)
KR (1) KR920004340B1 (de)
DE (1) DE68917801T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793019B2 (ja) * 1988-09-02 1995-10-09 株式会社東芝 半導体集積回路
JPH03148827A (ja) * 1989-11-06 1991-06-25 Nec Ic Microcomput Syst Ltd 半導体集積回路
JPH07111826B2 (ja) * 1990-09-12 1995-11-29 株式会社東芝 半導体記憶装置
JP2570591B2 (ja) * 1993-09-16 1997-01-08 日本電気株式会社 トランジスタ回路
KR0124046B1 (ko) * 1993-11-18 1997-11-25 김광호 반도체메모리장치의 승압레벨 감지회로
JP3562725B2 (ja) * 1993-12-24 2004-09-08 川崎マイクロエレクトロニクス株式会社 出力バッファ回路、および入出力バッファ回路
US5493244A (en) * 1994-01-13 1996-02-20 Atmel Corporation Breakdown protection circuit using high voltage detection
US5594381A (en) * 1994-04-29 1997-01-14 Maxim Integrated Products Reverse current prevention method and apparatus and reverse current guarded low dropout circuits
DE69531771T2 (de) * 1995-02-22 2004-08-05 Texas Instruments Inc., Dallas Hochspannungs-Analogschalter
US5517153A (en) * 1995-06-07 1996-05-14 Sgs-Thomson Microelectronics, Inc. Power supply isolation and switching circuit
DE69727918D1 (de) 1997-06-30 2004-04-08 St Microelectronics Srl Verfahren und entsprechende Schaltung zum Verhindern des Einschaltens eines parasitären Transistors in einer Ausgangsstufe einer elektronischen Schaltung
GB2327544B (en) * 1997-07-16 2001-02-07 Ericsson Telefon Ab L M Electronic analogue switch
JP3746273B2 (ja) * 2003-02-12 2006-02-15 株式会社東芝 信号レベル変換回路
JP3984222B2 (ja) * 2003-12-15 2007-10-03 株式会社東芝 信号レベル変換回路
JP2006301840A (ja) * 2005-04-19 2006-11-02 Toshiba Corp 信号レベル変換バススイッチ
JP4199765B2 (ja) * 2005-12-02 2008-12-17 マイクロン テクノロジー，インコーポレイテッド 高電圧スイッチング回路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936676A (en) * 1974-05-16 1976-02-03 Hitachi, Ltd. Multi-level voltage supply circuit for liquid crystal display device
US4441172A (en) * 1981-12-28 1984-04-03 National Semiconductor Corporation Semiconductor memory core program control circuit
US4477742A (en) * 1982-06-21 1984-10-16 Eaton Corporation Three terminal bidirectional drain to drain FET circuit
JPS6052112A (ja) * 1983-08-31 1985-03-25 Toshiba Corp 論理回路
JPS60124124A (ja) * 1983-12-08 1985-07-03 Nec Corp 入力回路
FR2607338A1 (fr) * 1986-11-21 1988-05-27 Eurotechnique Sa Circuit de commutation de tension en technologie mos
JPH01123522A (ja) * 1987-11-07 1989-05-16 Mitsubishi Electric Corp 半導体集積回路装置

Also Published As

Publication number Publication date
EP0346898A2 (de) 1989-12-20
JPH01317022A (ja) 1989-12-21
JPH056373B2 (de) 1993-01-26
US4988894A (en) 1991-01-29
KR910002127A (ko) 1991-01-31
DE68917801D1 (de) 1994-10-06
EP0346898A3 (de) 1991-02-27
EP0346898B1 (de) 1994-08-31
KR920004340B1 (ko) 1992-06-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee