JP3878715B2 - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP3878715B2
JP3878715B2 JP12845197A JP12845197A JP3878715B2 JP 3878715 B2 JP3878715 B2 JP 3878715B2 JP 12845197 A JP12845197 A JP 12845197A JP 12845197 A JP12845197 A JP 12845197A JP 3878715 B2 JP3878715 B2 JP 3878715B2
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JP
Japan
Prior art keywords
light emitting
electrode
semiconductor layer
layer
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP12845197A
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English (en)
Japanese (ja)
Other versions
JPH10321912A (ja
JPH10321912A5 (enExample
Inventor
茂稔 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP12845197A priority Critical patent/JP3878715B2/ja
Publication of JPH10321912A publication Critical patent/JPH10321912A/ja
Publication of JPH10321912A5 publication Critical patent/JPH10321912A5/ja
Application granted granted Critical
Publication of JP3878715B2 publication Critical patent/JP3878715B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP12845197A 1997-05-19 1997-05-19 発光素子 Expired - Fee Related JP3878715B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12845197A JP3878715B2 (ja) 1997-05-19 1997-05-19 発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12845197A JP3878715B2 (ja) 1997-05-19 1997-05-19 発光素子

Publications (3)

Publication Number Publication Date
JPH10321912A JPH10321912A (ja) 1998-12-04
JPH10321912A5 JPH10321912A5 (enExample) 2005-03-17
JP3878715B2 true JP3878715B2 (ja) 2007-02-07

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ID=14985045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12845197A Expired - Fee Related JP3878715B2 (ja) 1997-05-19 1997-05-19 発光素子

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JP (1) JP3878715B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9614126B2 (en) 2015-04-27 2017-04-04 Nichia Corporation Light emitting device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4267122B2 (ja) * 1999-02-19 2009-05-27 アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド フォトリソグラフィ方法及びフォトリソグラフィを行うための装置構成
US6696223B2 (en) 1999-02-19 2004-02-24 Agilent Technologies, Inc. Method for performing photolithography
US6614056B1 (en) * 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
JP2003110139A (ja) * 2001-09-28 2003-04-11 Sanyo Electric Co Ltd 窒化物系半導体発光素子
JP3906736B2 (ja) * 2002-04-22 2007-04-18 日亜化学工業株式会社 窒化物半導体素子
KR100616693B1 (ko) * 2005-08-09 2006-08-28 삼성전기주식회사 질화물 반도체 발광 소자
DE112006002927B4 (de) * 2006-01-09 2010-06-02 Seoul Opto Device Co. Ltd., Ansan Licht emittierende Diode mit ITO-Schicht und Verfahren zur Herstellung einer solchen
JP2007287757A (ja) * 2006-04-12 2007-11-01 Rohm Co Ltd 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9614126B2 (en) 2015-04-27 2017-04-04 Nichia Corporation Light emitting device

Also Published As

Publication number Publication date
JPH10321912A (ja) 1998-12-04

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