JPH10321912A5 - - Google Patents
Info
- Publication number
- JPH10321912A5 JPH10321912A5 JP1997128451A JP12845197A JPH10321912A5 JP H10321912 A5 JPH10321912 A5 JP H10321912A5 JP 1997128451 A JP1997128451 A JP 1997128451A JP 12845197 A JP12845197 A JP 12845197A JP H10321912 A5 JPH10321912 A5 JP H10321912A5
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- semiconductor layer
- conductivity type
- electrode
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12845197A JP3878715B2 (ja) | 1997-05-19 | 1997-05-19 | 発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12845197A JP3878715B2 (ja) | 1997-05-19 | 1997-05-19 | 発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10321912A JPH10321912A (ja) | 1998-12-04 |
| JPH10321912A5 true JPH10321912A5 (enExample) | 2005-03-17 |
| JP3878715B2 JP3878715B2 (ja) | 2007-02-07 |
Family
ID=14985045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12845197A Expired - Fee Related JP3878715B2 (ja) | 1997-05-19 | 1997-05-19 | 発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3878715B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4267122B2 (ja) * | 1999-02-19 | 2009-05-27 | アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド | フォトリソグラフィ方法及びフォトリソグラフィを行うための装置構成 |
| US6696223B2 (en) | 1999-02-19 | 2004-02-24 | Agilent Technologies, Inc. | Method for performing photolithography |
| US6614056B1 (en) * | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
| JP2003110139A (ja) * | 2001-09-28 | 2003-04-11 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子 |
| JP3906736B2 (ja) * | 2002-04-22 | 2007-04-18 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| KR100616693B1 (ko) | 2005-08-09 | 2006-08-28 | 삼성전기주식회사 | 질화물 반도체 발광 소자 |
| DE112006002927B4 (de) * | 2006-01-09 | 2010-06-02 | Seoul Opto Device Co. Ltd., Ansan | Licht emittierende Diode mit ITO-Schicht und Verfahren zur Herstellung einer solchen |
| JP2007287757A (ja) * | 2006-04-12 | 2007-11-01 | Rohm Co Ltd | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
| US9614126B2 (en) | 2015-04-27 | 2017-04-04 | Nichia Corporation | Light emitting device |
-
1997
- 1997-05-19 JP JP12845197A patent/JP3878715B2/ja not_active Expired - Fee Related
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