JP3869588B2 - 回路パターン検査装置 - Google Patents

回路パターン検査装置 Download PDF

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Publication number
JP3869588B2
JP3869588B2 JP24725099A JP24725099A JP3869588B2 JP 3869588 B2 JP3869588 B2 JP 3869588B2 JP 24725099 A JP24725099 A JP 24725099A JP 24725099 A JP24725099 A JP 24725099A JP 3869588 B2 JP3869588 B2 JP 3869588B2
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JP
Japan
Prior art keywords
electron
electron beam
circuit pattern
inspection apparatus
pattern inspection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP24725099A
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English (en)
Japanese (ja)
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JP2001074437A5 (enExample
JP2001074437A (ja
Inventor
博之 品田
敦子 高藤
▲隆▼典 二宮
裕子 笹氣
真理 野副
久弥 村越
二宮　　拓
祐二 葛西
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Hitachi Ltd
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Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP24725099A priority Critical patent/JP3869588B2/ja
Priority to US09/652,606 priority patent/US6583413B1/en
Publication of JP2001074437A publication Critical patent/JP2001074437A/ja
Priority to US10/404,451 priority patent/US7098455B2/en
Publication of JP2001074437A5 publication Critical patent/JP2001074437A5/ja
Priority to US11/452,989 priority patent/US7397031B2/en
Application granted granted Critical
Publication of JP3869588B2 publication Critical patent/JP3869588B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP24725099A 1999-09-01 1999-09-01 回路パターン検査装置 Expired - Fee Related JP3869588B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP24725099A JP3869588B2 (ja) 1999-09-01 1999-09-01 回路パターン検査装置
US09/652,606 US6583413B1 (en) 1999-09-01 2000-08-30 Method of inspecting a circuit pattern and inspecting instrument
US10/404,451 US7098455B2 (en) 1999-09-01 2003-04-02 Method of inspecting a circuit pattern and inspecting instrument
US11/452,989 US7397031B2 (en) 1999-09-01 2006-06-15 Method of inspecting a circuit pattern and inspecting instrument

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24725099A JP3869588B2 (ja) 1999-09-01 1999-09-01 回路パターン検査装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2004029137A Division JP2004157139A (ja) 2004-02-05 2004-02-05 回路パターン検査装置及び回路パターン検査方法
JP2006238865A Division JP4382067B2 (ja) 2006-09-04 2006-09-04 回路パターン検査装置

Publications (3)

Publication Number Publication Date
JP2001074437A JP2001074437A (ja) 2001-03-23
JP2001074437A5 JP2001074437A5 (enExample) 2005-01-06
JP3869588B2 true JP3869588B2 (ja) 2007-01-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP24725099A Expired - Fee Related JP3869588B2 (ja) 1999-09-01 1999-09-01 回路パターン検査装置

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JP (1) JP3869588B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4312910B2 (ja) 1999-12-02 2009-08-12 株式会社日立製作所 レビューｓｅｍ
KR100383258B1 (ko) * 2000-11-09 2003-05-09 삼성전자주식회사 주사 전자 현미경을 이용한 측정 장치의 측정 에러 검출방법
JP2003023053A (ja) * 2001-07-09 2003-01-24 Hitachi Ltd 半導体装置の製造方法
JP2003107022A (ja) 2001-09-28 2003-04-09 Hitachi Ltd 欠陥検査装置及び検査方法
JP4014916B2 (ja) * 2002-04-11 2007-11-28 株式会社キーエンス 電子顕微鏡、電子顕微鏡の操作方法、電子顕微鏡操作プログラムおよびコンピュータで読み取り可能な記録媒体
US7211796B2 (en) 2003-05-27 2007-05-01 Kabushiki Kaisha Toshiba Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device
JP4079841B2 (ja) * 2003-06-30 2008-04-23 オリンパス株式会社 欠陥表示装置
JP4611755B2 (ja) 2005-01-13 2011-01-12 株式会社日立ハイテクノロジーズ 走査電子顕微鏡及びその撮像方法
JP5059297B2 (ja) * 2005-05-09 2012-10-24 株式会社日立ハイテクノロジーズ 電子線式観察装置
JP4705442B2 (ja) * 2005-09-16 2011-06-22 株式会社日立ハイテクノロジーズ 電子線計測装置の静電偏向制御回路および静電偏向制御方法
JP4668807B2 (ja) * 2006-02-20 2011-04-13 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び荷電粒子線画像生成方法
JP2010080144A (ja) * 2008-09-25 2010-04-08 Lasertec Corp 複合型顕微鏡装置及び試料観察方法
JP2010141011A (ja) * 2008-12-10 2010-06-24 Hitachi High-Technologies Corp 半導体検査装置、半導体検査方法、及び半導体製造方法
CN102985887B (zh) 2010-06-30 2014-12-03 克拉-坦科股份有限公司 用于晶片检查或度量设置的数据扰乱
JP2012018812A (ja) * 2010-07-08 2012-01-26 Keyence Corp 拡大観察装置及び拡大観察方法、拡大観察用プログラム並びにコンピュータで読み取り可能な記録媒体
JP5707291B2 (ja) * 2011-09-29 2015-04-30 株式会社日立ハイテクノロジーズ 画像分類支援を行う荷電粒子線装置
JP5842716B2 (ja) * 2012-04-02 2016-01-13 株式会社島津製作所 電子ビーム装置の調整方法とそのように調整された電子ビーム装置
JP6052934B2 (ja) * 2013-08-14 2016-12-27 株式会社日立製作所 半導体検査方法、半導体検査装置、および半導体素子の製造方法
JP6242745B2 (ja) * 2014-05-13 2017-12-06 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び当該装置を用いる検査方法
JP2019169362A (ja) 2018-03-23 2019-10-03 株式会社日立製作所 電子ビーム装置
JP7567415B2 (ja) * 2020-02-04 2024-10-16 住友金属鉱山株式会社 電子顕微鏡による分析方法
CN114820567B (zh) * 2022-05-17 2024-02-13 合肥工业大学 一种基于深度学习的绝缘子检测方法
JP7691581B2 (ja) * 2022-06-08 2025-06-11 株式会社日立ハイテク 検査装置および検査素子
CN116012380B (zh) * 2023-03-27 2023-06-16 中江立江电子有限公司 一种绝缘子缺陷检测方法、装置、设备及介质

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Publication number Publication date
JP2001074437A (ja) 2001-03-23

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