JP3865919B2 - ネガ型フォトレジスト組成物 - Google Patents

ネガ型フォトレジスト組成物 Download PDF

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Publication number
JP3865919B2
JP3865919B2 JP02216898A JP2216898A JP3865919B2 JP 3865919 B2 JP3865919 B2 JP 3865919B2 JP 02216898 A JP02216898 A JP 02216898A JP 2216898 A JP2216898 A JP 2216898A JP 3865919 B2 JP3865919 B2 JP 3865919B2
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JP
Japan
Prior art keywords
group
general formula
substituent
alkyl group
embedded image
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP02216898A
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English (en)
Japanese (ja)
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JPH11218918A (ja
JPH11218918A5 (OSRAM
Inventor
健一郎 佐藤
Original Assignee
富士フイルムホールディングス株式会社
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Priority to JP02216898A priority Critical patent/JP3865919B2/ja
Priority to US09/229,684 priority patent/US6103449A/en
Priority to KR1019990003492A priority patent/KR100629203B1/ko
Publication of JPH11218918A publication Critical patent/JPH11218918A/ja
Publication of JPH11218918A5 publication Critical patent/JPH11218918A5/ja
Application granted granted Critical
Publication of JP3865919B2 publication Critical patent/JP3865919B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D498/00Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms
    • C07D498/02Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D498/04Ortho-condensed systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
JP02216898A 1998-02-03 1998-02-03 ネガ型フォトレジスト組成物 Expired - Fee Related JP3865919B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP02216898A JP3865919B2 (ja) 1998-02-03 1998-02-03 ネガ型フォトレジスト組成物
US09/229,684 US6103449A (en) 1998-02-03 1999-01-13 Negative working photoresist composition
KR1019990003492A KR100629203B1 (ko) 1998-02-03 1999-02-03 네가티브형 포토레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02216898A JP3865919B2 (ja) 1998-02-03 1998-02-03 ネガ型フォトレジスト組成物

Publications (3)

Publication Number Publication Date
JPH11218918A JPH11218918A (ja) 1999-08-10
JPH11218918A5 JPH11218918A5 (OSRAM) 2005-02-24
JP3865919B2 true JP3865919B2 (ja) 2007-01-10

Family

ID=12075290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02216898A Expired - Fee Related JP3865919B2 (ja) 1998-02-03 1998-02-03 ネガ型フォトレジスト組成物

Country Status (3)

Country Link
US (1) US6103449A (OSRAM)
JP (1) JP3865919B2 (OSRAM)
KR (1) KR100629203B1 (OSRAM)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000015014A (ko) * 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
KR100400291B1 (ko) * 1998-11-27 2004-02-05 주식회사 하이닉스반도체 신규의포토레지스트용단량체,그의공중합체및이를이용한포토레지스트조성물
US6465147B1 (en) * 1998-12-31 2002-10-15 Hyundai Electronics Industries Co., Ltd. Cross-linker for photoresist, and process for forming a photoresist pattern using the same
JP3734012B2 (ja) * 1999-10-25 2006-01-11 信越化学工業株式会社 レジスト材料及びパターン形成方法
TWI257528B (en) * 1999-12-16 2006-07-01 Fuji Photo Film Co Ltd Positive resist composition
JP4105354B2 (ja) * 2000-01-17 2008-06-25 富士フイルム株式会社 ポジ型フォトレジスト組成物
KR100490278B1 (ko) * 2000-03-06 2005-05-17 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 레지스트 재료 및 패턴 형성 방법
US6251560B1 (en) * 2000-05-05 2001-06-26 International Business Machines Corporation Photoresist compositions with cyclic olefin polymers having lactone moiety
KR100506882B1 (ko) * 2000-07-13 2005-08-08 주식회사 하이닉스반도체 Tips용 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물
KR100555288B1 (ko) 2000-09-14 2006-03-03 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 레지스트 재료 및 패턴 형성 방법
KR20040012688A (ko) * 2000-11-29 2004-02-11 이 아이 듀폰 디 네모아 앤드 캄파니 중합체 중의 보호기, 포토레지스트 및 미세석판인쇄 방법
US6624335B2 (en) * 2001-01-17 2003-09-23 Shin Etsu Chemical Co., Ltd. Ether, polymer, resist composition and patterning process
JP4262422B2 (ja) * 2001-06-28 2009-05-13 富士フイルム株式会社 ポジ型フォトレジスト組成物及びそれを用いたパターン形成方法
JP4337602B2 (ja) * 2004-03-31 2009-09-30 日本ゼオン株式会社 感放射線組成物、積層体及びその製造方法並びに電子部品
TWI637998B (zh) * 2013-11-26 2018-10-11 住友化學股份有限公司 樹脂、光阻組成物,以及光阻圖案之製造方法
TWI644929B (zh) 2013-11-26 2018-12-21 住友化學股份有限公司 樹脂、光阻組成物以及光阻圖案的製造方法
US9514651B2 (en) 2014-08-19 2016-12-06 Here Global B.V. Optimal warning distance

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4571375A (en) * 1983-10-24 1986-02-18 Benedikt George M Ring-opened polynorbornene negative photoresist with bisazide
US5932391A (en) * 1995-08-18 1999-08-03 Kabushiki Kaisha Toshiba Resist for alkali development
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Jsr株式会社 ArFエキシマレーザー照射用感放射線性樹脂組成物
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JP3859353B2 (ja) * 1998-04-28 2006-12-20 富士通株式会社 ネガ型レジスト組成物およびレジストパターンの形成方法

Also Published As

Publication number Publication date
JPH11218918A (ja) 1999-08-10
KR100629203B1 (ko) 2006-09-27
US6103449A (en) 2000-08-15
KR19990072386A (ko) 1999-09-27

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