JP3863624B2 - ウェーハの研磨装置及びウェーハの研磨方法 - Google Patents

ウェーハの研磨装置及びウェーハの研磨方法 Download PDF

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Publication number
JP3863624B2
JP3863624B2 JP6982197A JP6982197A JP3863624B2 JP 3863624 B2 JP3863624 B2 JP 3863624B2 JP 6982197 A JP6982197 A JP 6982197A JP 6982197 A JP6982197 A JP 6982197A JP 3863624 B2 JP3863624 B2 JP 3863624B2
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Japan
Prior art keywords
wafer
polishing
thickness
film layer
rotating
Prior art date
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Expired - Lifetime
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JP6982197A
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English (en)
Japanese (ja)
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JPH10264017A (ja
JPH10264017A5 (enrdf_load_stackoverflow
Inventor
安雄 稲田
孝昭 酒井
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Fujikoshi Machinery Corp
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Fujikoshi Machinery Corp
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Priority to JP6982197A priority Critical patent/JP3863624B2/ja
Publication of JPH10264017A publication Critical patent/JPH10264017A/ja
Publication of JPH10264017A5 publication Critical patent/JPH10264017A5/ja
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Publication of JP3863624B2 publication Critical patent/JP3863624B2/ja
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Expired - Lifetime legal-status Critical Current

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP6982197A 1997-03-24 1997-03-24 ウェーハの研磨装置及びウェーハの研磨方法 Expired - Lifetime JP3863624B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6982197A JP3863624B2 (ja) 1997-03-24 1997-03-24 ウェーハの研磨装置及びウェーハの研磨方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6982197A JP3863624B2 (ja) 1997-03-24 1997-03-24 ウェーハの研磨装置及びウェーハの研磨方法

Publications (3)

Publication Number Publication Date
JPH10264017A JPH10264017A (ja) 1998-10-06
JPH10264017A5 JPH10264017A5 (enrdf_load_stackoverflow) 2005-03-17
JP3863624B2 true JP3863624B2 (ja) 2006-12-27

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JP6982197A Expired - Lifetime JP3863624B2 (ja) 1997-03-24 1997-03-24 ウェーハの研磨装置及びウェーハの研磨方法

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JP (1) JP3863624B2 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6372600B1 (en) * 1999-08-30 2002-04-16 Agere Systems Guardian Corp. Etch stops and alignment marks for bonded wafers
JP4858798B2 (ja) * 2001-05-15 2012-01-18 株式会社ニコン 研磨装置、研磨方法およびこの研磨装置を用いた半導体デバイス製造方法
JP6046933B2 (ja) * 2012-07-10 2016-12-21 株式会社荏原製作所 研磨方法
CN117260516B (zh) * 2023-11-22 2024-03-08 北京特思迪半导体设备有限公司 偏心驱动机构和抛光机
CN117260515B (zh) * 2023-11-22 2024-02-13 北京特思迪半导体设备有限公司 抛光机的动态联动控制方法
CN117260514B (zh) * 2023-11-22 2024-02-09 北京特思迪半导体设备有限公司 偏心驱动机构的精确控制方法
CN117260542B (zh) * 2023-11-23 2024-03-08 专心护康(厦门)科技有限公司 一种用于等离子抛光的ph检测和调节装置

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JPH10264017A (ja) 1998-10-06

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