JPH10264017A5 - - Google Patents

Info

Publication number
JPH10264017A5
JPH10264017A5 JP1997069821A JP6982197A JPH10264017A5 JP H10264017 A5 JPH10264017 A5 JP H10264017A5 JP 1997069821 A JP1997069821 A JP 1997069821A JP 6982197 A JP6982197 A JP 6982197A JP H10264017 A5 JPH10264017 A5 JP H10264017A5
Authority
JP
Japan
Prior art keywords
wafer
polishing
platen
film layer
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997069821A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10264017A (ja
JP3863624B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP6982197A priority Critical patent/JP3863624B2/ja
Priority claimed from JP6982197A external-priority patent/JP3863624B2/ja
Publication of JPH10264017A publication Critical patent/JPH10264017A/ja
Publication of JPH10264017A5 publication Critical patent/JPH10264017A5/ja
Application granted granted Critical
Publication of JP3863624B2 publication Critical patent/JP3863624B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP6982197A 1997-03-24 1997-03-24 ウェーハの研磨装置及びウェーハの研磨方法 Expired - Lifetime JP3863624B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6982197A JP3863624B2 (ja) 1997-03-24 1997-03-24 ウェーハの研磨装置及びウェーハの研磨方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6982197A JP3863624B2 (ja) 1997-03-24 1997-03-24 ウェーハの研磨装置及びウェーハの研磨方法

Publications (3)

Publication Number Publication Date
JPH10264017A JPH10264017A (ja) 1998-10-06
JPH10264017A5 true JPH10264017A5 (enrdf_load_stackoverflow) 2005-03-17
JP3863624B2 JP3863624B2 (ja) 2006-12-27

Family

ID=13413815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6982197A Expired - Lifetime JP3863624B2 (ja) 1997-03-24 1997-03-24 ウェーハの研磨装置及びウェーハの研磨方法

Country Status (1)

Country Link
JP (1) JP3863624B2 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6372600B1 (en) * 1999-08-30 2002-04-16 Agere Systems Guardian Corp. Etch stops and alignment marks for bonded wafers
JP4858798B2 (ja) * 2001-05-15 2012-01-18 株式会社ニコン 研磨装置、研磨方法およびこの研磨装置を用いた半導体デバイス製造方法
JP6046933B2 (ja) * 2012-07-10 2016-12-21 株式会社荏原製作所 研磨方法
CN117260516B (zh) * 2023-11-22 2024-03-08 北京特思迪半导体设备有限公司 偏心驱动机构和抛光机
CN117260515B (zh) * 2023-11-22 2024-02-13 北京特思迪半导体设备有限公司 抛光机的动态联动控制方法
CN117260514B (zh) * 2023-11-22 2024-02-09 北京特思迪半导体设备有限公司 偏心驱动机构的精确控制方法
CN117260542B (zh) * 2023-11-23 2024-03-08 专心护康(厦门)科技有限公司 一种用于等离子抛光的ph检测和调节装置

Similar Documents

Publication Publication Date Title
TWI775841B (zh) 基板的研磨裝置
US6517414B1 (en) Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus
US6241585B1 (en) Apparatus and method for chemical mechanical polishing
US6520843B1 (en) High planarity chemical mechanical planarization
EP1068047B1 (en) Apparatus and method for film thickness measurement integrated into a wafer load/unload unit
KR100780588B1 (ko) 반도체 기판의 평탄화 장치 및 방법
JP4658182B2 (ja) 研磨パッドのプロファイル測定方法
US8398456B2 (en) Polishing method, polishing apparatus and method of monitoring a substrate
TWI582844B (zh) 在清潔模組中調整襯墊
JPH09270401A (ja) 半導体ウェーハの研磨方法
TWI423316B (zh) 研磨方法及研磨裝置、及研磨裝置控制用程式
JP3734878B2 (ja) ウェーハの研磨装置
CN105164793A (zh) 对于利用用于化学机械抛光的晶片及晶片边缘/斜角清洁模块的盘/垫清洁的设计
JP5311190B2 (ja) 吸着装置の製造方法および研磨装置
JP5037974B2 (ja) 研磨加工ステージにおける半導体基板の監視機器および監視方法
JP3863624B2 (ja) ウェーハの研磨装置及びウェーハの研磨方法
JPH10264017A5 (enrdf_load_stackoverflow)
JP3987305B2 (ja) 基板研磨方法及び基板研磨装置
JP2005288664A (ja) 研磨装置及び研磨パッド立上完了検知方法
JP2005288664A5 (enrdf_load_stackoverflow)
JP2539753B2 (ja) 半導体基板の鏡面研磨装置
JP2008018502A (ja) 基板研磨装置、基板研磨方法、及び基板処理装置
US6116994A (en) Polishing apparatus
KR100692313B1 (ko) 씨엠피 장치
KR20010040249A (ko) 연마장치 및 그 장치를 사용한 반도체제조방법