JP3858606B2 - 干渉フィルタの製造方法、干渉フィルタ、波長可変干渉フィルタの製造方法及び波長可変干渉フィルタ - Google Patents

干渉フィルタの製造方法、干渉フィルタ、波長可変干渉フィルタの製造方法及び波長可変干渉フィルタ Download PDF

Info

Publication number
JP3858606B2
JP3858606B2 JP2001037511A JP2001037511A JP3858606B2 JP 3858606 B2 JP3858606 B2 JP 3858606B2 JP 2001037511 A JP2001037511 A JP 2001037511A JP 2001037511 A JP2001037511 A JP 2001037511A JP 3858606 B2 JP3858606 B2 JP 3858606B2
Authority
JP
Japan
Prior art keywords
film
sacrificial layer
reflective film
interference filter
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001037511A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002243937A5 (enrdf_load_stackoverflow
JP2002243937A (ja
Inventor
高司 武田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2001037511A priority Critical patent/JP3858606B2/ja
Publication of JP2002243937A publication Critical patent/JP2002243937A/ja
Publication of JP2002243937A5 publication Critical patent/JP2002243937A5/ja
Application granted granted Critical
Publication of JP3858606B2 publication Critical patent/JP3858606B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Mechanical Light Control Or Optical Switches (AREA)
  • Optical Filters (AREA)
  • Micromachines (AREA)
  • Chemical Vapour Deposition (AREA)
JP2001037511A 2001-02-14 2001-02-14 干渉フィルタの製造方法、干渉フィルタ、波長可変干渉フィルタの製造方法及び波長可変干渉フィルタ Expired - Fee Related JP3858606B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001037511A JP3858606B2 (ja) 2001-02-14 2001-02-14 干渉フィルタの製造方法、干渉フィルタ、波長可変干渉フィルタの製造方法及び波長可変干渉フィルタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001037511A JP3858606B2 (ja) 2001-02-14 2001-02-14 干渉フィルタの製造方法、干渉フィルタ、波長可変干渉フィルタの製造方法及び波長可変干渉フィルタ

Publications (3)

Publication Number Publication Date
JP2002243937A JP2002243937A (ja) 2002-08-28
JP2002243937A5 JP2002243937A5 (enrdf_load_stackoverflow) 2005-01-27
JP3858606B2 true JP3858606B2 (ja) 2006-12-20

Family

ID=18900627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001037511A Expired - Fee Related JP3858606B2 (ja) 2001-02-14 2001-02-14 干渉フィルタの製造方法、干渉フィルタ、波長可変干渉フィルタの製造方法及び波長可変干渉フィルタ

Country Status (1)

Country Link
JP (1) JP3858606B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110954981A (zh) * 2018-09-27 2020-04-03 精工爱普生株式会社 光学装置及电子设备

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7297471B1 (en) 2003-04-15 2007-11-20 Idc, Llc Method for manufacturing an array of interferometric modulators
US7550794B2 (en) 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
TW557395B (en) * 2003-01-29 2003-10-11 Yen Sun Technology Corp Optical interference type reflection panel and the manufacturing method thereof
TW570896B (en) 2003-05-26 2004-01-11 Prime View Int Co Ltd A method for fabricating an interference display cell
US7221495B2 (en) 2003-06-24 2007-05-22 Idc Llc Thin film precursor stack for MEMS manufacturing
JP3812550B2 (ja) 2003-07-07 2006-08-23 セイコーエプソン株式会社 波長可変光フィルタ
JP2005045976A (ja) * 2003-07-25 2005-02-17 Matsushita Electric Works Ltd 静電アクチュエータ
JP3770326B2 (ja) 2003-10-01 2006-04-26 セイコーエプソン株式会社 分析装置
JP2005165067A (ja) 2003-12-03 2005-06-23 Seiko Epson Corp 波長可変フィルタおよび波長可変フィルタの製造方法
JP4634057B2 (ja) * 2004-03-17 2011-02-16 アンリツ株式会社 光キャビティ
JP4296974B2 (ja) * 2004-03-24 2009-07-15 株式会社村田製作所 ファブリペロー型波長可変フィルタおよび多チャンネルファブリペロー型波長可変フィルタ
US7087134B2 (en) * 2004-03-31 2006-08-08 Hewlett-Packard Development Company, L.P. System and method for direct-bonding of substrates
JP4210245B2 (ja) 2004-07-09 2009-01-14 セイコーエプソン株式会社 波長可変フィルタ及び検出装置
EP2246726B1 (en) 2004-07-29 2013-04-03 QUALCOMM MEMS Technologies, Inc. System and method for micro-electromechanical operating of an interferometric modulator
US20060066932A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of selective etching using etch stop layer
US7492502B2 (en) 2004-09-27 2009-02-17 Idc, Llc Method of fabricating a free-standing microstructure
US7429334B2 (en) 2004-09-27 2008-09-30 Idc, Llc Methods of fabricating interferometric modulators by selectively removing a material
CN100410723C (zh) * 2005-01-28 2008-08-13 精工爱普生株式会社 可变波长滤光器以及可变波长滤光器的制造方法
TW200628877A (en) 2005-02-04 2006-08-16 Prime View Int Co Ltd Method of manufacturing optical interference type color display
KR101375337B1 (ko) 2005-07-22 2014-03-18 퀄컴 엠이엠에스 테크놀로지스, 인크. 지지 구조물들을 가지는 전자기계 장치들 및 그 제조방법들
EP2495212A3 (en) 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
EP1910216A1 (en) 2005-07-22 2008-04-16 QUALCOMM Incorporated Support structure for mems device and methods therefor
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7547568B2 (en) 2006-02-22 2009-06-16 Qualcomm Mems Technologies, Inc. Electrical conditioning of MEMS device and insulating layer thereof
US7450295B2 (en) 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US7623287B2 (en) 2006-04-19 2009-11-24 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7527996B2 (en) 2006-04-19 2009-05-05 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7321457B2 (en) 2006-06-01 2008-01-22 Qualcomm Incorporated Process and structure for fabrication of MEMS device having isolated edge posts
US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7569488B2 (en) 2007-06-22 2009-08-04 Qualcomm Mems Technologies, Inc. Methods of making a MEMS device by monitoring a process parameter
US7864403B2 (en) 2009-03-27 2011-01-04 Qualcomm Mems Technologies, Inc. Post-release adjustment of interferometric modulator reflectivity
US8547626B2 (en) 2010-03-25 2013-10-01 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of shaping the same
JP5625614B2 (ja) 2010-08-20 2014-11-19 セイコーエプソン株式会社 光フィルター、光フィルターモジュール、分光測定器および光機器
JP5577983B2 (ja) * 2010-09-21 2014-08-27 株式会社デンソー ファブリペロー干渉計の製造方法
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
JP5906640B2 (ja) * 2011-09-29 2016-04-20 セイコーエプソン株式会社 波長可変干渉フィルター、光学フィルターデバイス、光学モジュール、及び電子機器
JP6035768B2 (ja) 2012-02-16 2016-11-30 セイコーエプソン株式会社 干渉フィルター、光学モジュール、および電子機器
FI125612B (en) * 2012-05-08 2015-12-15 Teknologian Tutkimuskeskus Vtt Oy Fabry-Perot Interferometer
US9638913B2 (en) * 2013-11-26 2017-05-02 Inphenix, Inc. Wavelength tunable MEMS-Fabry Perot filter
JP7238385B2 (ja) * 2018-12-20 2023-03-14 セイコーエプソン株式会社 分光フィルターモジュール、分光カメラおよび電子機器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110954981A (zh) * 2018-09-27 2020-04-03 精工爱普生株式会社 光学装置及电子设备

Also Published As

Publication number Publication date
JP2002243937A (ja) 2002-08-28

Similar Documents

Publication Publication Date Title
JP3858606B2 (ja) 干渉フィルタの製造方法、干渉フィルタ、波長可変干渉フィルタの製造方法及び波長可変干渉フィルタ
US10288870B2 (en) Wavelength tunable MEMS-Fabry Perot filter
KR101293601B1 (ko) 광 미소 기전 시스템 및 구조
US5943155A (en) Mars optical modulators
JP4032216B2 (ja) 光学多層構造体およびその製造方法、並びに光スイッチング素子および画像表示装置
US7447891B2 (en) Light modulator with concentric control-electrode structure
KR100723549B1 (ko) 반사식 공간 광 변조기의 제조
KR100853131B1 (ko) 전자 기기 구동 방법 및 장치
US20040209195A1 (en) Method for fabricating an interference display unit
JP5640549B2 (ja) 光フィルター、光フィルターの製造方法および光機器
JP3921483B2 (ja) マイクロミラー及びその製造方法
KR20040074908A (ko) 정전구동형 초소형 전기적 기계적 복합체 소자와 그제조방법, 광학 초소형 전기적 기계적 복합체소자,광변조소자, 지엘브이 디바이스 및 레이저 디스플레이
KR20040111336A (ko) 반사식 공간 광 변조기의 구조
WO2007040762A1 (en) Light modulator with tunable optical state
KR20040111335A (ko) 반사식 공간 광 변조기
JP4404174B2 (ja) 光スイッチング素子およびこれを用いたスイッチング装置並びに画像表示装置
CN101498837A (zh) 基于柔性支撑结构的光栅光调制器及阵列
US20070267057A1 (en) Optical device and method of forming the same
KR100558438B1 (ko) 광 스위치의 제조 방법
CN116661127A (zh) 一种电磁静电双驱动式珐珀滤波芯片及其制备方法
WO2021077396A1 (zh) 一种可调光学滤波器件
KR20060018683A (ko) 정전력 구동 스캐닝 마이크로미러 및 그 제조방법
JP2004309782A (ja) 光変調素子、光変調素子を備えた光変調素子アレイ及び画像表示装置
JP2012145675A (ja) 光フィルター、光フィルターの製造方法および光機器
KR20060050658A (ko) 광변조기 모듈 패키지 구조

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040223

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040223

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060314

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060328

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060526

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060829

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060911

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090929

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100929

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100929

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110929

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120929

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130929

Year of fee payment: 7

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees