JP3844322B2 - 遠紫外線露光用ポジ型フォトレジスト組成物 - Google Patents

遠紫外線露光用ポジ型フォトレジスト組成物 Download PDF

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Publication number
JP3844322B2
JP3844322B2 JP18759798A JP18759798A JP3844322B2 JP 3844322 B2 JP3844322 B2 JP 3844322B2 JP 18759798 A JP18759798 A JP 18759798A JP 18759798 A JP18759798 A JP 18759798A JP 3844322 B2 JP3844322 B2 JP 3844322B2
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JP
Japan
Prior art keywords
group
acid
embedded image
resin
examples
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Expired - Lifetime
Application number
JP18759798A
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English (en)
Japanese (ja)
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JP2000019737A5 (US06780888-20040824-C00057.png
JP2000019737A (ja
Inventor
健一郎 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP18759798A priority Critical patent/JP3844322B2/ja
Priority to US09/345,159 priority patent/US6303265B1/en
Priority to KR1019990026473A priority patent/KR100569641B1/ko
Publication of JP2000019737A publication Critical patent/JP2000019737A/ja
Publication of JP2000019737A5 publication Critical patent/JP2000019737A5/ja
Application granted granted Critical
Publication of JP3844322B2 publication Critical patent/JP3844322B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP18759798A 1998-07-02 1998-07-02 遠紫外線露光用ポジ型フォトレジスト組成物 Expired - Lifetime JP3844322B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP18759798A JP3844322B2 (ja) 1998-07-02 1998-07-02 遠紫外線露光用ポジ型フォトレジスト組成物
US09/345,159 US6303265B1 (en) 1998-07-02 1999-06-30 Positive photoresist composition for exposure to far ultraviolet light
KR1019990026473A KR100569641B1 (ko) 1998-07-02 1999-07-02 원자외선 노광용 포지티브 포토레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18759798A JP3844322B2 (ja) 1998-07-02 1998-07-02 遠紫外線露光用ポジ型フォトレジスト組成物

Publications (3)

Publication Number Publication Date
JP2000019737A JP2000019737A (ja) 2000-01-21
JP2000019737A5 JP2000019737A5 (US06780888-20040824-C00057.png) 2005-02-24
JP3844322B2 true JP3844322B2 (ja) 2006-11-08

Family

ID=16208904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18759798A Expired - Lifetime JP3844322B2 (ja) 1998-07-02 1998-07-02 遠紫外線露光用ポジ型フォトレジスト組成物

Country Status (3)

Country Link
US (1) US6303265B1 (US06780888-20040824-C00057.png)
JP (1) JP3844322B2 (US06780888-20040824-C00057.png)
KR (1) KR100569641B1 (US06780888-20040824-C00057.png)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010054851A (ko) * 1999-12-08 2001-07-02 윤종용 지환식 감광성 폴리머 및 이를 포함하는 레지스트조성물과 그 제조방법
JP4166402B2 (ja) * 2000-02-28 2008-10-15 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
JP4414069B2 (ja) * 2000-07-11 2010-02-10 ダイセル化学工業株式会社 フォトレジスト用高分子化合物の製造方法、及びフォトレジスト組成物の製造方法
JP2002049157A (ja) * 2000-08-03 2002-02-15 Nec Corp ポジ型化学増幅レジスト及びそのパターン形成方法
US6677419B1 (en) 2002-11-13 2004-01-13 International Business Machines Corporation Preparation of copolymers
TWI344966B (en) 2003-03-10 2011-07-11 Maruzen Petrochem Co Ltd Novel thiol compound, copolymer and method for producing the copolymer
JP4693149B2 (ja) * 2004-04-12 2011-06-01 三菱レイヨン株式会社 レジスト用重合体
JP4513501B2 (ja) * 2004-10-27 2010-07-28 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4911456B2 (ja) * 2006-11-21 2012-04-04 富士フイルム株式会社 ポジ型感光性組成物、該ポジ型感光性組成物に用いられる高分子化合物、該高分子化合物の製造方法及びポジ型感光性組成物を用いたパターン形成方法
JP5162290B2 (ja) * 2007-03-23 2013-03-13 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
US20180289821A1 (en) * 2011-08-03 2018-10-11 Anp Technologies, Inc. Oxazoline Polymer Compositions and Use Thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5580694A (en) * 1994-06-27 1996-12-03 International Business Machines Corporation Photoresist composition with androstane and process for its use
KR100206664B1 (ko) * 1995-06-28 1999-07-01 세키사와 다다시 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
JP3700276B2 (ja) 1996-08-09 2005-09-28 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3297324B2 (ja) * 1996-10-30 2002-07-02 富士通株式会社 レジスト組成物、レジストパターンの形成方法及び半導体装置の製造方法
JP3890357B2 (ja) * 1997-02-07 2007-03-07 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
KR100538968B1 (ko) * 1997-02-18 2006-07-11 후지 샤신 필름 가부시기가이샤 포지티브감광성조성물
EP0878738B1 (en) * 1997-05-12 2002-01-09 Fuji Photo Film Co., Ltd. Positive resist composition
JPH1152575A (ja) * 1997-08-04 1999-02-26 Sumitomo Chem Co Ltd 化学増幅型ポジ型フォトレジスト組成物
JP3847454B2 (ja) * 1998-03-20 2006-11-22 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法

Also Published As

Publication number Publication date
US6303265B1 (en) 2001-10-16
JP2000019737A (ja) 2000-01-21
KR20000011431A (ko) 2000-02-25
KR100569641B1 (ko) 2006-04-11

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