JP3827422B2 - 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置 - Google Patents

荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置 Download PDF

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Publication number
JP3827422B2
JP3827422B2 JP26908197A JP26908197A JP3827422B2 JP 3827422 B2 JP3827422 B2 JP 3827422B2 JP 26908197 A JP26908197 A JP 26908197A JP 26908197 A JP26908197 A JP 26908197A JP 3827422 B2 JP3827422 B2 JP 3827422B2
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pattern
exposure
area
data
density
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JP26908197A
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Japanese (ja)
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JPH11111595A (ja
JPH11111595A5 (https=
Inventor
康夫 真鍋
裕美 星野
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Fujitsu Ltd
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Fujitsu Ltd
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Priority to JP26908197A priority Critical patent/JP3827422B2/ja
Priority to US09/055,990 priority patent/US6087052A/en
Priority to KR1019980014442A priority patent/KR100276571B1/ko
Priority to DE19818840A priority patent/DE19818840B4/de
Publication of JPH11111595A publication Critical patent/JPH11111595A/ja
Priority to US09/520,756 priority patent/US6350992B1/en
Publication of JPH11111595A5 publication Critical patent/JPH11111595A5/ja
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Publication of JP3827422B2 publication Critical patent/JP3827422B2/ja
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP26908197A 1997-10-01 1997-10-01 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置 Expired - Fee Related JP3827422B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP26908197A JP3827422B2 (ja) 1997-10-01 1997-10-01 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置
US09/055,990 US6087052A (en) 1997-10-01 1998-04-07 Charged particle beam exposure method utilizing subfield proximity corrections
KR1019980014442A KR100276571B1 (ko) 1997-10-01 1998-04-23 하전 입자 빔 노광 방법 및 하전 입자 빔 노광 장치
DE19818840A DE19818840B4 (de) 1997-10-01 1998-04-28 Ladungsteilchenstrahlbelichtungsverfahren und Ladungsteilchenstrahlbelichtungsvorrichtung
US09/520,756 US6350992B1 (en) 1997-10-01 2000-03-07 Charged particle beam exposure method and charged particle beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26908197A JP3827422B2 (ja) 1997-10-01 1997-10-01 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置

Related Child Applications (4)

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JP2005306129A Division JP2006041561A (ja) 2005-10-20 2005-10-20 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置
JP2005306128A Division JP2006041560A (ja) 2005-10-20 2005-10-20 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置
JP2005306127A Division JP4295262B2 (ja) 2005-10-20 2005-10-20 荷電粒子ビーム露光方法
JP2005306130A Division JP4295263B2 (ja) 2005-10-20 2005-10-20 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置

Publications (3)

Publication Number Publication Date
JPH11111595A JPH11111595A (ja) 1999-04-23
JPH11111595A5 JPH11111595A5 (https=) 2005-06-16
JP3827422B2 true JP3827422B2 (ja) 2006-09-27

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JP26908197A Expired - Fee Related JP3827422B2 (ja) 1997-10-01 1997-10-01 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168017A (ja) * 1999-12-13 2001-06-22 Canon Inc 荷電粒子線露光装置、荷電粒子線露光方法及び制御データの決定方法、該方法を適用したデバイスの製造方法。
US6946668B1 (en) 2000-03-21 2005-09-20 Hitachi, Ltd. Electron beam lithography device and drawing method using electron beams
JP2007220748A (ja) * 2006-02-14 2007-08-30 Fujitsu Ltd 露光データ作成方法、露光データ作成装置、露光データ検証方法、露光データ検証装置、及びプログラム
JP5001563B2 (ja) * 2006-03-08 2012-08-15 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法

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JPH11111595A (ja) 1999-04-23

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