JP3820743B2 - アクティブマトリクス基板およびアクティブマトリクス基板の製造方法および表示装置 - Google Patents
アクティブマトリクス基板およびアクティブマトリクス基板の製造方法および表示装置 Download PDFInfo
- Publication number
- JP3820743B2 JP3820743B2 JP8465998A JP8465998A JP3820743B2 JP 3820743 B2 JP3820743 B2 JP 3820743B2 JP 8465998 A JP8465998 A JP 8465998A JP 8465998 A JP8465998 A JP 8465998A JP 3820743 B2 JP3820743 B2 JP 3820743B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- interlayer insulating
- short
- wiring
- active matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 76
- 239000011159 matrix material Substances 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000010408 film Substances 0.000 claims description 242
- 239000011229 interlayer Substances 0.000 claims description 98
- 238000005520 cutting process Methods 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 37
- 238000005229 chemical vapour deposition Methods 0.000 claims description 19
- 239000004973 liquid crystal related substance Substances 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 16
- 239000010410 layer Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 description 23
- 230000003068 static effect Effects 0.000 description 23
- 229910052782 aluminium Inorganic materials 0.000 description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 17
- 229920001709 polysilazane Polymers 0.000 description 14
- 238000005530 etching Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- 229910052715 tantalum Inorganic materials 0.000 description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- -1 phosphorus ions Chemical class 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920000592 inorganic polymer Polymers 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8465998A JP3820743B2 (ja) | 1998-03-30 | 1998-03-30 | アクティブマトリクス基板およびアクティブマトリクス基板の製造方法および表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8465998A JP3820743B2 (ja) | 1998-03-30 | 1998-03-30 | アクティブマトリクス基板およびアクティブマトリクス基板の製造方法および表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11282011A JPH11282011A (ja) | 1999-10-15 |
| JPH11282011A5 JPH11282011A5 (enExample) | 2004-08-05 |
| JP3820743B2 true JP3820743B2 (ja) | 2006-09-13 |
Family
ID=13836862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8465998A Expired - Fee Related JP3820743B2 (ja) | 1998-03-30 | 1998-03-30 | アクティブマトリクス基板およびアクティブマトリクス基板の製造方法および表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3820743B2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001222021A (ja) * | 2000-02-09 | 2001-08-17 | Seiko Epson Corp | 液晶装置及びその製造方法 |
| US7023021B2 (en) | 2000-02-22 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP4542659B2 (ja) * | 2000-03-07 | 2010-09-15 | 出光興産株式会社 | アクティブ駆動型有機ｅｌ表示装置およびその製造方法 |
| US6789910B2 (en) | 2000-04-12 | 2004-09-14 | Semiconductor Energy Laboratory, Co., Ltd. | Illumination apparatus |
| TW501279B (en) * | 2000-04-21 | 2002-09-01 | Matsushita Electric Industrial Co Ltd | Substrate for display panel, method of producing same, and apparatus for forming thin film used therefor |
| JP3743273B2 (ja) * | 2000-09-27 | 2006-02-08 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
| JP4207858B2 (ja) | 2004-07-05 | 2009-01-14 | セイコーエプソン株式会社 | 半導体装置、表示装置及び電子機器 |
| JP2008164787A (ja) | 2006-12-27 | 2008-07-17 | Epson Imaging Devices Corp | 液晶表示装置 |
| JP5525224B2 (ja) | 2008-09-30 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP5324359B2 (ja) * | 2009-08-20 | 2013-10-23 | パナソニック液晶ディスプレイ株式会社 | 表示装置及びその製造方法 |
| JP5395566B2 (ja) * | 2009-08-20 | 2014-01-22 | パナソニック液晶ディスプレイ株式会社 | 表示装置及びその製造方法 |
| JP5720288B2 (ja) * | 2011-02-15 | 2015-05-20 | 富士ゼロックス株式会社 | 電子素子及びその製造方法 |
-
1998
- 1998-03-30 JP JP8465998A patent/JP3820743B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11282011A (ja) | 1999-10-15 |
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