JP3788104B2 - 窒化ガリウム単結晶基板及びその製造方法 - Google Patents

窒化ガリウム単結晶基板及びその製造方法 Download PDF

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JP3788104B2
JP3788104B2 JP14415199A JP14415199A JP3788104B2 JP 3788104 B2 JP3788104 B2 JP 3788104B2 JP 14415199 A JP14415199 A JP 14415199A JP 14415199 A JP14415199 A JP 14415199A JP 3788104 B2 JP3788104 B2 JP 3788104B2
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oxygen
gas
substrate
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JP2000044400A (ja
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健作 元木
拓司 岡久
直樹 松本
政人 松島
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Sumitomo Electric Industries Ltd
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JP14415199A 1998-05-28 1999-05-25 窒化ガリウム単結晶基板及びその製造方法 Expired - Fee Related JP3788104B2 (ja)

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Cited By (2)

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EP2055811A2 (en) 2007-10-24 2009-05-06 Sumitomo Electric Industries, Ltd. Nitride semiconductor substrate and method of manufacturing the same and field-effect transistor
US8110484B1 (en) 2010-11-19 2012-02-07 Sumitomo Electric Industries, Ltd. Conductive nitride semiconductor substrate and method for producing the same

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JP2006193422A (ja) * 1998-05-28 2006-07-27 Sumitomo Electric Ind Ltd 窒化ガリウム単結晶基板及びその製造方法
JP3639789B2 (ja) 2001-01-31 2005-04-20 シャープ株式会社 窒化物系半導体発光素子
JP3952357B2 (ja) * 2001-02-28 2007-08-01 信越半導体株式会社 発光素子の製造方法
US6773504B2 (en) 2001-04-12 2004-08-10 Sumitomo Electric Industries, Ltd. Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
JP3826825B2 (ja) * 2001-04-12 2006-09-27 住友電気工業株式会社 窒化ガリウム結晶への酸素ドーピング方法と酸素ドープされたｎ型窒化ガリウム単結晶基板
US8633093B2 (en) 2001-04-12 2014-01-21 Sumitomo Electric Industries Ltd. Oxygen doping method to gallium nitride single crystal substrate
US6791120B2 (en) * 2002-03-26 2004-09-14 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
US7372077B2 (en) 2003-02-07 2008-05-13 Sanyo Electric Co., Ltd. Semiconductor device
JP2005005378A (ja) * 2003-06-10 2005-01-06 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶およびその製造方法
JP3841092B2 (ja) 2003-08-26 2006-11-01 住友電気工業株式会社 発光装置
JP2005191530A (ja) 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd 発光装置
ATE527571T1 (de) * 2004-04-15 2011-10-15 Univ Boston Optische bauelemente mit texturierten halbleiterschichten
CN1327486C (zh) * 2004-07-21 2007-07-18 南京大学 利用氢化物汽相外延方法在硅衬底上生长GaN薄膜
JP2006179511A (ja) 2004-12-20 2006-07-06 Sumitomo Electric Ind Ltd 発光装置
JP4244953B2 (ja) * 2005-04-26 2009-03-25 住友電気工業株式会社 発光装置およびその製造方法
KR100673873B1 (ko) * 2005-05-12 2007-01-25 삼성코닝 주식회사 열전도도가 우수한 질화갈륨 단결정 기판
JP2006332267A (ja) * 2005-05-25 2006-12-07 Sumitomo Electric Ind Ltd 発光装置、発光装置の製造方法および窒化物半導体基板
CN100412238C (zh) * 2006-03-30 2008-08-20 中国科学院合肥物质科学研究院 制备氮化镓单晶薄膜材料的装置及方法
US20080272377A1 (en) 2007-05-02 2008-11-06 Sumitomo Electric Industries, Ltd. Gallium Nitride Substrate and Gallium Nitride Film Deposition Method
JP5045388B2 (ja) * 2007-11-20 2012-10-10 住友電気工業株式会社 Ｉｉｉ族窒化物半導体結晶の成長方法およびｉｉｉ族窒化物半導体結晶基板の製造方法
JP2009167066A (ja) 2008-01-18 2009-07-30 Sumitomo Electric Ind Ltd 窒化ガリウムの結晶成長方法および窒化ガリウム基板の製造方法
KR100893360B1 (ko) * 2008-05-02 2009-04-15 (주)그랜드 텍 질화갈륨 단결정의 성장을 위한 버퍼층의 형성방법
JP4730422B2 (ja) 2008-10-24 2011-07-20 住友電気工業株式会社 Ｉｉｉ族窒化物半導体電子デバイス、ｉｉｉ族窒化物半導体電子デバイスを作製する方法、及びｉｉｉ族窒化物半導体エピタキシャルウエハ
JP4375497B1 (ja) 2009-03-11 2009-12-02 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
JP5045955B2 (ja) 2009-04-13 2012-10-10 日立電線株式会社 Ｉｉｉ族窒化物半導体自立基板
JP5326787B2 (ja) 2009-05-11 2013-10-30 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザダイオード、及びｉｉｉ族窒化物半導体レーザダイオードを作製する方法
WO2011037251A1 (ja) * 2009-09-28 2011-03-31 株式会社トクヤマ 積層体の製造方法
JP5729182B2 (ja) * 2010-08-31 2015-06-03 株式会社リコー ｎ型ＩＩＩ族窒化物単結晶の製造方法、ｎ型ＩＩＩ族窒化物単結晶および結晶基板
JP2012074544A (ja) * 2010-09-29 2012-04-12 Ngk Insulators Ltd 半導体素子および半導体素子の作製方法
JP5938871B2 (ja) * 2010-11-15 2016-06-22 住友電気工業株式会社 ＧａＮ系膜の製造方法
US8697564B2 (en) 2010-11-16 2014-04-15 Sumitomo Electric Industries, Ltd. Method of manufacturing GaN-based film
CN102719888B (zh) * 2011-03-29 2015-11-25 清华大学 具有纳米微结构基板的制备方法
US9024310B2 (en) 2011-01-12 2015-05-05 Tsinghua University Epitaxial structure
CN102723414B (zh) * 2011-03-29 2015-04-01 清华大学 外延结构体的制备方法
US9184228B2 (en) 2011-03-07 2015-11-10 Sumitomo Electric Industries, Ltd. Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer
JP5754191B2 (ja) * 2011-03-18 2015-07-29 株式会社リコー １３族窒化物結晶の製造方法および１３族窒化物結晶基板の製造方法
JP5546514B2 (ja) 2011-09-20 2014-07-09 古河電気工業株式会社 窒化物半導体素子及び製造方法
KR101976229B1 (ko) 2011-10-21 2019-05-07 미쯔비시 케미컬 주식회사 주기표 제 13 족 금속 질화물 반도체 결정의 제조 방법, 및 그 제조 방법에 의해 제조되는 주기표 제 13 족 금속 질화물 반도체 결정
KR102101597B1 (ko) 2011-10-28 2020-04-17 미쯔비시 케미컬 주식회사 질화물 결정의 제조 방법 및 질화물 결정
EP2772570A4 (en) 2011-10-28 2015-03-04 Mitsubishi Chem Corp METHOD FOR PRODUCING A NITRIDE CRYSTAL AND NITRIDE CRYSTAL
WO2014129544A1 (ja) 2013-02-22 2014-08-28 三菱化学株式会社 周期表第１３族金属窒化物結晶およびその製造方法
JP6454981B2 (ja) * 2014-04-24 2019-01-23 住友電気工業株式会社 半導体積層体および受光素子
KR102072167B1 (ko) * 2017-12-19 2020-01-31 한국세라믹기술원 HVPE 성장법을 이용한 α-Ga2O3 박막 제조 방법
JP2021012900A (ja) * 2019-07-03 2021-02-04 パナソニックＩｐマネジメント株式会社 Ｉｉｉ族窒化物系半導体レーザ素子
JP7500293B2 (ja) 2020-06-12 2024-06-17 パナソニックホールディングス株式会社 Ｉｉｉ族窒化物結晶、ｉｉｉ族窒化物基板、及びｉｉｉ族窒化物結晶の製造方法
JP7497222B2 (ja) 2020-06-12 2024-06-10 パナソニックホールディングス株式会社 Ｉｉｉ族窒化物結晶、ｉｉｉ族窒化物基板、及びｉｉｉ族窒化物結晶の製造方法

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JPH09115862A (ja) * 1995-10-20 1997-05-02 Hitachi Ltd 研磨工具と、それを用いた研磨方法および研磨装置
JP3164016B2 (ja) * 1996-05-31 2001-05-08 住友電気工業株式会社 発光素子および発光素子用ウエハの製造方法
JP3721674B2 (ja) * 1996-12-05 2005-11-30 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体基板の製造方法
KR100629558B1 (ko) * 1997-10-30 2006-09-27 스미토모덴키고교가부시키가이샤 ＧａＮ단결정기판 및 그 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2055811A2 (en) 2007-10-24 2009-05-06 Sumitomo Electric Industries, Ltd. Nitride semiconductor substrate and method of manufacturing the same and field-effect transistor
US8110484B1 (en) 2010-11-19 2012-02-07 Sumitomo Electric Industries, Ltd. Conductive nitride semiconductor substrate and method for producing the same

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