JP3779256B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP3779256B2
JP3779256B2 JP2002326732A JP2002326732A JP3779256B2 JP 3779256 B2 JP3779256 B2 JP 3779256B2 JP 2002326732 A JP2002326732 A JP 2002326732A JP 2002326732 A JP2002326732 A JP 2002326732A JP 3779256 B2 JP3779256 B2 JP 3779256B2
Authority
JP
Japan
Prior art keywords
semiconductor device
region
logic circuit
protection circuit
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002326732A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003218226A (ja
JP2003218226A5 (https=
Inventor
健一 田手原
教英 衣笠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2002326732A priority Critical patent/JP3779256B2/ja
Publication of JP2003218226A publication Critical patent/JP2003218226A/ja
Publication of JP2003218226A5 publication Critical patent/JP2003218226A5/ja
Application granted granted Critical
Publication of JP3779256B2 publication Critical patent/JP3779256B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2002326732A 2001-11-16 2002-11-11 半導体装置 Expired - Lifetime JP3779256B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002326732A JP3779256B2 (ja) 2001-11-16 2002-11-11 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001351463 2001-11-16
JP2001-351463 2001-11-16
JP2002326732A JP3779256B2 (ja) 2001-11-16 2002-11-11 半導体装置

Publications (3)

Publication Number Publication Date
JP2003218226A JP2003218226A (ja) 2003-07-31
JP2003218226A5 JP2003218226A5 (https=) 2005-04-28
JP3779256B2 true JP3779256B2 (ja) 2006-05-24

Family

ID=27667285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002326732A Expired - Lifetime JP3779256B2 (ja) 2001-11-16 2002-11-11 半導体装置

Country Status (1)

Country Link
JP (1) JP3779256B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014241497A (ja) * 2013-06-11 2014-12-25 ローム株式会社 半導体集積回路

Also Published As

Publication number Publication date
JP2003218226A (ja) 2003-07-31

Similar Documents

Publication Publication Date Title
US6621133B1 (en) Electrostatic discharge protection device
US5623156A (en) Electrostatic discharge (ESD) protection circuit and structure for output drivers
US6399990B1 (en) Isolated well ESD device
JPH09181195A (ja) 静電気保護素子
JP5593160B2 (ja) 半導体装置
JPH09503109A (ja) スイッチング可能なボディ領域−ソース間の接続機構を備えた電界効果トランジスタ
US20050275027A1 (en) ESD protection for integrated circuits
JP2005072057A (ja) 半導体集積回路装置
US5663678A (en) ESD protection device
US6967381B2 (en) Semiconductor device
KR100325190B1 (ko) 반도체집적회로
JPH07193195A (ja) Ｃｍｏｓ集積回路装置
US6707653B2 (en) Semiconductor controlled rectifier for use in electrostatic discharge protection circuit
KR20010021489A (ko) 반도체 집적 회로
JP3149999B2 (ja) 半導体入出力保護装置
JP3779256B2 (ja) 半導体装置
JP2602974B2 (ja) Ｃｍｏｓ半導体集積回路装置
US6084272A (en) Electrostatic discharge protective circuit for semiconductor device
US7843009B2 (en) Electrostatic discharge protection device for an integrated circuit
JP3141865B2 (ja) 半導体集積装置
JP3100137B2 (ja) 半導体集積装置
JP2737629B2 (ja) Ｃｍｏｓ構成の出力回路を有する半導体装置
US6757148B2 (en) Electro-static discharge protection device for integrated circuit inputs
KR100591125B1 (ko) 정전기적 방전으로부터의 보호를 위한 게이트 접지 엔모스트랜지스터
JP3248490B2 (ja) 入出力保護装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040621

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040824

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041025

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050125

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050324

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060214

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060301

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100310

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110310

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110310

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120310

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130310

Year of fee payment: 7