JP3732206B2 - エッチング可能な基板における完全な外部コーナー作成のためのミクロ機械加工方法 - Google Patents
エッチング可能な基板における完全な外部コーナー作成のためのミクロ機械加工方法 Download PDFInfo
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- JP3732206B2 JP3732206B2 JP2004242184A JP2004242184A JP3732206B2 JP 3732206 B2 JP3732206 B2 JP 3732206B2 JP 2004242184 A JP2004242184 A JP 2004242184A JP 2004242184 A JP2004242184 A JP 2004242184A JP 3732206 B2 JP3732206 B2 JP 3732206B2
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- JP
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- Prior art keywords
- groove
- etching
- wafer
- mask
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 title description 11
- 238000005459 micromachining Methods 0.000 title description 2
- 238000005530 etching Methods 0.000 claims description 53
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 150000004767 nitrides Chemical class 0.000 description 7
- 238000001459 lithography Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Micromachines (AREA)
- Hall/Mr Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
(100)シリコンに於いては〈110〉方向に沿って各々のウェーハ上にフラットが設けられている。この配向に於いては、{111}面は、ウェーハフラットに対し平行もしくは垂直な方向に於いて、(100)面と、図1Aに示されるように54.74°の角度で交差する。
本発明に従って、水平方向の溝502’、503’、504’が最初に(100)ウェーハにエッチングされる。それぞれの溝502’、503’、504’の端部は、図5B中に示されるように、垂直方向の溝505が形成される領域中に突き出ている。各々の溝502’、503’、504’の側壁は{111}面によって形成される。そして、ウェーハはエッチングにより形成された水平方向の溝をマスクするため酸化される。その後、酸化された溝502’、503’、504’の前記端部502’E、503’E、504’Eを取り囲む、垂直方向の溝505を画定するウィンドウパターン505aがマスク中に開けられ、垂直方向の溝505がエッチングにより形成される。水平方向の溝の端部502’E、503’E、504’Eの下のシリコンは、水平方向の溝502’、503’、504’の側壁を画定している{111}面に到達するまで、エッチングによりアンダーカットされる。水平方向の溝502’、503’、504’と垂直方向の溝505のエッチングとの交差により形成された外部コーナーはエッチバックしない。というのは、これらのコーナーは、水平方向の溝502’、503’、504’の側壁の酸化物マスクによって保護されているからである。それによって、水平方向の溝502、503、504と垂直方向の溝505との間にシャープな交差が得られる。
Claims (7)
- エッチング可能なウェーハに、第1の方向に直線的に延在する第1の溝、及び前記第1の方向に直交する第2の方向に直線的に延在しかつ前記第1の溝と交差する第2の溝を形成し、前記第1の溝と前記第2の溝との交差によって外部コーナーを形成する方法であって、
前記第2の溝を形成する領域の前記ウェーハの表面上にマスク層を形成する過程と、
前記ウェーハの表面上の前記マスク層に覆われていない残りの部分を酸化する過程と、
前記酸化する過程によって形成された酸化物を、前記第1の溝のパターン形状に除去する過程と、
前記ウェーハを前記マスク層及び前記酸化物をマスクとしてエッチングすることにより、前記第1の溝を形成する過程と、
前記エッチングにより形成された第1の溝の表面に酸化物を生成するため、前記ウェーハを酸化する過程と、
前記マスク層を取り除く過程と、
前記ウェーハを前記酸化物をマスクとしてエッチングすることにより、前記第2の溝を形成する過程とを有することを特徴とする方法。 - 前記第2の溝が、前記第1の溝と前記第1の溝の一方の端部において交差することを特徴とする請求項1に記載の方法。
- 前記第1の溝が平行な複数の溝であることを特徴とする請求項1に記載の方法。
- 前記第1と第2の溝がV型であることを特徴とする請求項1乃至3の何れかに記載の方法。
- 前記第1の溝が、前記第2の溝と比べより狭く、浅いことを特徴とする請求項1乃至4の何れかに記載の方法。
- 前記第1の溝を形成する前記過程で行われるエッチングが、等方性エッチングであることを特徴とする請求項1に記載の方法。
- 前記マスク層の除去に、プラズマエッチングを用いることを特徴とする請求項1に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/023,188 US5338400A (en) | 1993-02-25 | 1993-02-25 | Micromachining process for making perfect exterior corner in an etchable substrate |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6519061A Division JPH07506227A (ja) | 1993-02-25 | 1994-02-22 | エッチング可能な基板における完全な外部コーナー作成のためのミクロ機械加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005051253A JP2005051253A (ja) | 2005-02-24 |
JP3732206B2 true JP3732206B2 (ja) | 2006-01-05 |
Family
ID=21813598
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6519061A Ceased JPH07506227A (ja) | 1993-02-25 | 1994-02-22 | エッチング可能な基板における完全な外部コーナー作成のためのミクロ機械加工方法 |
JP2004242184A Expired - Fee Related JP3732206B2 (ja) | 1993-02-25 | 2004-08-23 | エッチング可能な基板における完全な外部コーナー作成のためのミクロ機械加工方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6519061A Ceased JPH07506227A (ja) | 1993-02-25 | 1994-02-22 | エッチング可能な基板における完全な外部コーナー作成のためのミクロ機械加工方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5338400A (ja) |
EP (1) | EP0637403A4 (ja) |
JP (2) | JPH07506227A (ja) |
AU (1) | AU676892B2 (ja) |
CA (1) | CA2133656A1 (ja) |
WO (1) | WO1994019824A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5484507A (en) * | 1993-12-01 | 1996-01-16 | Ford Motor Company | Self compensating process for aligning an aperture with crystal planes in a substrate |
US5804314A (en) * | 1994-03-22 | 1998-09-08 | Hewlett-Packard Company | Silicon microstructures and process for their fabrication |
US5640995A (en) * | 1995-03-14 | 1997-06-24 | Baxter International Inc. | Electrofluidic standard module and custom circuit board assembly |
WO1997000121A1 (en) * | 1995-06-16 | 1997-01-03 | The University Of Washington | Tangential flow planar microfabricated fluid filter |
US6615496B1 (en) * | 2000-05-04 | 2003-09-09 | Sandia Corporation | Micromachined cutting blade formed from {211}-oriented silicon |
US6907150B2 (en) * | 2001-02-07 | 2005-06-14 | Shipley Company, L.L.C. | Etching process for micromachining crystalline materials and devices fabricated thereby |
US6885786B2 (en) * | 2001-02-07 | 2005-04-26 | Shipley Company, L.L.C. | Combined wet and dry etching process for micromachining of crystalline materials |
US20030021572A1 (en) * | 2001-02-07 | 2003-01-30 | Steinberg Dan A. | V-groove with tapered depth and method for making |
US6964804B2 (en) * | 2001-02-14 | 2005-11-15 | Shipley Company, L.L.C. | Micromachined structures made by combined wet and dry etching |
US20020195417A1 (en) * | 2001-04-20 | 2002-12-26 | Steinberg Dan A. | Wet and dry etching process on <110> silicon and resulting structures |
US20020191943A1 (en) * | 2001-05-01 | 2002-12-19 | Hughes William T. | Venting optical microbench |
US6700388B1 (en) | 2002-02-19 | 2004-03-02 | Itt Manufacturing Enterprises, Inc. | Methods and apparatus for detecting electromagnetic interference |
CN100365775C (zh) | 2003-05-23 | 2008-01-30 | 罗姆和哈斯电子材料有限责任公司 | 用于显微机械加工晶体材料的蚀刻方法以及由此方法制备的器件 |
JP4217564B2 (ja) * | 2003-08-08 | 2009-02-04 | キヤノン株式会社 | 近接場露光用のマスクの製造方法 |
US7059054B2 (en) * | 2003-12-24 | 2006-06-13 | Honeywell International Inc. | Cutting blades having pointed tip, ultra-sharp edges, and ultra-flat faces |
US20090051003A1 (en) * | 2007-08-23 | 2009-02-26 | International Business Machines Corporation | Methods and Structures Involving Electrically Programmable Fuses |
JP2012089560A (ja) * | 2010-10-15 | 2012-05-10 | Fuji Electric Co Ltd | 傾斜状の側面を備える逆阻止型igbtの製造方法 |
KR20220066729A (ko) | 2020-11-16 | 2022-05-24 | 삼성전자주식회사 | 수직 구조물 형성을 위한 식각 방법 및 이를 적용한 소형 소자 및 그 제조 방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4286374A (en) * | 1979-02-24 | 1981-09-01 | International Computers Limited | Large scale integrated circuit production |
DE2922416A1 (de) * | 1979-06-01 | 1980-12-11 | Ibm Deutschland | Schattenwurfmaske zum strukturieren von oberflaechenbereichen und verfahren zu ihrer herstellung |
JPS6160889A (ja) * | 1984-08-30 | 1986-03-28 | Toshiba Corp | シヤドウマスクの製造方法 |
US4733823A (en) * | 1984-10-15 | 1988-03-29 | At&T Teletype Corporation | Silicon nozzle structures and method of manufacture |
US5182227A (en) * | 1986-04-25 | 1993-01-26 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
US4869780A (en) * | 1987-04-10 | 1989-09-26 | Trw Inc. | Ion milling method |
US4981552A (en) * | 1989-04-06 | 1991-01-01 | Ford Motor Company | Method for fabricating a silicon accelerometer responsive to three orthogonal force components |
EP0418423B2 (de) * | 1989-09-22 | 1998-12-09 | Siemens Aktiengesellschaft | Verfahren zum anisotropen Ätzen von Silizium |
US5124281A (en) * | 1990-08-27 | 1992-06-23 | At&T Bell Laboratories | Method of fabricating a photonics module comprising a spherical lens |
US5204690A (en) * | 1991-07-01 | 1993-04-20 | Xerox Corporation | Ink jet printhead having intergral silicon filter |
-
1993
- 1993-02-25 US US08/023,188 patent/US5338400A/en not_active Expired - Lifetime
-
1994
- 1994-02-22 AU AU62399/94A patent/AU676892B2/en not_active Expired - Fee Related
- 1994-02-22 CA CA002133656A patent/CA2133656A1/en not_active Abandoned
- 1994-02-22 JP JP6519061A patent/JPH07506227A/ja not_active Ceased
- 1994-02-22 WO PCT/US1994/001591 patent/WO1994019824A1/en not_active Application Discontinuation
- 1994-02-22 EP EP94909619A patent/EP0637403A4/en not_active Withdrawn
-
2004
- 2004-08-23 JP JP2004242184A patent/JP3732206B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
AU6239994A (en) | 1994-09-14 |
CA2133656A1 (en) | 1994-09-01 |
AU676892B2 (en) | 1997-03-27 |
US5338400A (en) | 1994-08-16 |
JP2005051253A (ja) | 2005-02-24 |
WO1994019824A1 (en) | 1994-09-01 |
EP0637403A1 (en) | 1995-02-08 |
JPH07506227A (ja) | 1995-07-06 |
EP0637403A4 (en) | 1996-12-18 |
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