JP3726498B2 - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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Publication number
JP3726498B2
JP3726498B2 JP17292898A JP17292898A JP3726498B2 JP 3726498 B2 JP3726498 B2 JP 3726498B2 JP 17292898 A JP17292898 A JP 17292898A JP 17292898 A JP17292898 A JP 17292898A JP 3726498 B2 JP3726498 B2 JP 3726498B2
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JP
Japan
Prior art keywords
substrate
bonding
adhesive
wiring board
wire
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Expired - Fee Related
Application number
JP17292898A
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Japanese (ja)
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JP2000012594A (en
Inventor
今井　　博和
長坂　　崇
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Denso Corp
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Denso Corp
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Priority to JP17292898A priority Critical patent/JP3726498B2/en
Publication of JP2000012594A publication Critical patent/JP2000012594A/en
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Publication of JP3726498B2 publication Critical patent/JP3726498B2/en
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Description

【０００１】
【発明の属する技術分野】
本発明は、基板を基板支持部材に接着した状態で、両者をワイヤボンディングして構成された半導体装置の製造方法に関する。
【０００２】
【従来の技術】
例えば複数の半導体チップを搭載した配線基板をケース内に収容する場合、まず、配線基板をケースの内底部に接着剤を介して接着する。続いて、この接着した配線基板及びケースを加熱することにより、上記接着剤を硬化させる。そして、配線基板上に設けられたボンディングランドと、ケース上に設けられたボンディングランドとの間をワイヤボンディングすることにより接続するように構成されている。
【０００３】
ここで、ボンディングランドは、例えばＣｕで形成されているため、上記接着剤を加熱硬化するときに、その表面が酸化・汚染されてしまう。ボンディングランドが酸化・汚染されたままで、ワイヤボンディングを行うと、ボンディング強度（接合強度）が不足するという不具合がある。このため、従来構成においては、接着剤を加熱硬化する工程を行った後、ボンディングランド上の酸化膜や汚染物を例えばプラズマクリーニングにより除去する工程を実行してから、ワイヤボンディングを行うようにしていた。また、他の対策として、接着剤を硬化する工程を行う前に、ボンディングランド上にストリップマスクを塗布しておくという方法もあった。この方法の場合、接着剤を硬化する工程を行った後、ストリップマスクを除去する工程を実行してから、ワイヤボンディングを行う。
【０００４】
【発明が解決しようとする課題】
しかしながら、上記従来構成の各方法の場合、作業工程数が増えるという欠点があった。また、ボンディングランド上の酸化膜や汚染物をプラズマクリーニングにより除去する方法の場合、酸化膜や汚染物を完全に除去することは困難であった。更に、ボンディングランド上にストリップマスクを塗布しておく方法の場合、硬化時間の長い接着剤や硬化温度の高い接着剤を使用すると、ボンディングランドの酸化・汚染を回避することが困難であった。
【０００５】
一方、ボンディングランドの酸化を防止する方法として、Ｎ２等低酸素濃度の雰囲気または還元雰囲気において接着剤を硬化させる方法がある。しかし、この方法の場合、接着剤等から発生するアウトガスや硬化炉内の汚染物がボンディングランドに付着してしまうという欠点があった。
【０００６】
そこで、本発明の目的は、ワイヤボンディングのボンディング強度を十分強くすることができ、しかも、作業工程数を低減することができる半導体装置の製造方法を提供することにある。
【０００７】
【課題を解決するための手段】
請求項１の発明によれば、基板を基板支持部材に接着剤を介して接着した後、接着剤を硬化させる前に、基板と基板支持部材との間をワイヤボンディングし、この後、接着剤を硬化させるように構成したので、ボンディングランドが酸化・汚染されない状態で、ワイヤボンディングを実行することができる。このため、ボンディング強度が十分強くなると共に、クリーニング工程やマスク工程等の作業工程を不要にすることができる。そして、ボンディング工程を実行するときに、前記基板が位置ずれしないように前記基板を押さえ付ける押さえ部材を、前記基板支持部材を載置固定する治具に設けたので、ワイヤボンディングを行なったときに、基板が位置ずれすることを確実に防止できる。
【０００８】
請求項２の発明によれば、配線基板をケースに接着して両者の間をワイヤボンディングする構成に適用することができる。また、請求項３の発明によれば、ボンディング工程を実行するときに、基板が位置ずれしないように基板を押さえ付ける押さえ部材を、ワイヤボンダーのヘッド部に設けたので、請求項１の発明とほぼ同じ作用効果を得ることができる。
【０００９】
【発明の実施の形態】
以下、本発明の第１の実施例について図１ないし図３を参照しながら説明する。まず、本実施例で使用する配線基板１について、図１（ａ）及び（ｂ）に従って説明する。この配線基板１は、プリント配線基板やセラミック基板等から構成されており、その上面には、図１（ａ）に示すように、導体パターン２が予め形成されている。そして、配線基板１の上面には、図１（ｂ）に示すように、各種の半導体チップ３や種々の部品（図示しない）が次に述べるようにして搭載されている。
【００１０】
即ち、配線基板１の導体パターン２の上に例えばＡｇペースト４を塗布する。続いて、各種の半導体チップ３や種々の部品を、上記Ａｇペースト４の上に載置することにより配線基板１の上面に貼り付ける。そして、Ａｇペースト４が硬化したら、半導体チップ３と配線基板１の導体パターン２との間をワイヤボンディングして接続する。この場合、例えばＡｕ線５を用いてワイヤボンディングを行っている。
【００１１】
次に、このような構成の配線基板１を、基板支持部材である例えばケース６内に収容して固定する作業工程について、図１（ｃ）、（ｄ）、（ｅ）を参照して説明する。まず、図１（ｃ）に示すように、配線基板１をケース６の内底面に接着剤７を介して接着する接着工程を実行する。本実施例の場合、接着剤７として、例えばシリコーンゴム接着剤（具体的には、東レシリコーン製のＣＹ５２−２２３Ａ／Ｂ；付加反応型（２液型）シリコーンゴム）を使用した。また、接着剤７の厚み寸法は例えば約２００μｍに設定した。
【００１２】
続いて、図１（ｄ）に示すように、上記接着剤７を硬化させる前の状態（未硬化状態）で、配線基板１とケース６との間をワイヤボンディングするボンディング工程を実行する。この場合、例えばアルミ線８を用いてワイヤボンディング（例えば超音波によるワイヤボンディング）を行っている。そして、配線基板１の上面の右端部に設けられた導体パターン２であるボンディングランド２ａと、ケース６の内底部の右端部の段部６ａに設けられた導体パターン９であるボンディングランド９ａとを、上記アルミ線８でワイヤボンディングしている。ここで、接着剤７が硬化していない状態で、ワイヤボンディングを行うと、配線基板１が位置ずれを起こすような感じがするが、実際には位置ずれが生じなかった。
【００１３】
上記配線基板１の位置ずれが生じなかった理由としては、ワイヤボンディング時に、配線基板１に作用する横向きの力が非常に弱い力であるのに対して、接着剤７が未硬化であっても、配線基板１とケース６とを接着する力がかなり強い力であるためである。この接着する力がかなり強い理由は、配線基板１の下面全体とケース６の内底面とが接着剤７を介して面で接着されているためである。尚、ワイヤボンディング時に配線基板１に作用する横向きの力は、配線基板１側のボンディングランド２ａにアルミ線８を接続した後、アルミ線８を引き出すときに生じたり、また、ランド２ａ、９ａにアルミ線８を接続した後、アルミ線８を切断したりするときに生ずる力であり、非常に弱い。そして、本実施例においては、外径寸法が例えば２５０μｍのアルミ線を用いて、超音波ワイヤボンディングを実行したが、配線基板１は全く位置ずれしなかった。
【００１４】
さて、上記ワイヤボンディング工程を実行した後は、接着剤７を硬化させる工程を実行する。この場合、周知構成の硬化炉や加熱高温槽等を用いて上記ケース６及び配線基板１を加熱することにより、接着剤７を硬化させるように構成されている。これにより、配線基板１をケース６に取り付ける作業が完了する。
【００１５】
このような構成の本実施例によれば、配線基板１をケース６に取り付けるに当たって、配線基板１をケース６に接着剤７を介して接着した後、接着剤７の未硬化状態で、配線基板１とケース６との間をワイヤボンディングした。そしてこの後、接着剤７を加熱硬化させるように構成した。この構成の場合、配線基板１及びケース６の各ボンディングランド２ａ及び９ａが酸化・汚染される前のきれいな状態で、ワイヤボンディングを実行することができる。このため、ワイヤボンディングのボンディング強度（接合強度）を十分強くすることができる。そして、このようにボンディング強度が強くなると、ワイヤボンディングのパワーを低下させても、十分なボンディング強度を容易に得ることができる。また、本実施例では、従来構成において必要としたクリーニング工程やマスク工程等の作業工程が不要になる。このため、作業工程数を低減することができる。
【００１６】
ここで、本実施例のアルミ線８のボンディング強度、具体的には、アルミ線８をボンディングした部分の引っ張り強度を調べた結果を、図２に示す。この図２において、右側のデータは、比較例のアルミ線のボンディング強度を調べた結果である。この比較例は、配線基板をケースに接着剤を介して接着した後、硬化炉により接着剤を加熱硬化させ、その後、配線基板とケースとの間をワイヤボンディングした例である。この図２から、本実施例の場合のボンディング強度が十分強くなったことがわかる。
【００１７】
尚、ボンディング強度を調べるに当たっては、図３に示すような構造にして、引っ張り強度の試験を行った。即ち、図３に示すように、基板載せ台である治具１０の上面にケース６を両面粘着テープ１１を介して接着固定した。また、比較例とクリーニング工程を行う従来構成との違いは、従来構成においては、ワイヤボンディングを行う前に、ボンディングランド上の酸化膜や汚染物を除去するクリーニング工程を行った点である。そして、クリーニング工程を行っても酸化膜や汚染物を完全には除去できないため、従来構成の場合のボンディング強度は、比較例よりも多少良くなる程度である。
【００１８】
また、上記実施例では、ワイヤボンディングを実行するときに、アルミ線８を用いたが、これに代えて、Ａｕ線等を用いても良い。更に、上記実施例では、超音波を用いたワイヤボンディングに適用したが、超音波及び熱を用いたワイヤボンディングに適用しても良いし、また、熱を用いたワイヤボンディングに適用しても良い。
【００１９】
更にまた、上記実施例では、配線基板１をケース６に取り付ける構成に適用したが、これに限られるものではなく、半導体チップを配線基板に取り付ける構成に適用しても良い。具体的には、半導体チップを配線基板に接着する接着剤として、例えば前述したシリコーンゴム系の接着剤を使用する場合、接着剤を加熱硬化するときに、ボンディングランドが酸化・汚染される。このため、上記実施例とほぼ同様にして、半導体チップを配線基板に接着した後、接着剤を硬化させる前の状態で半導体チップと配線基板との間をワイヤボンディングし、この後、接着剤を硬化させるように構成することが好ましい。
【００２０】
さて、上述したように、配線基板１をケース６に接着した接着剤７が硬化していない状態で、ワイヤボンディングを行うと、配線基板１が位置ずれを起こす可能性がある。例えば、使用するワイヤが太くて、ワイヤボンディング時に配線基板１に対して大きな横向きの力が作用するような場合や、未硬化状態の接着剤の接着力が非常に弱い接着剤を使用しなければならない場合などが考えられる。このような場合には、図４に示す第２の実施例または図５に示す第３の実施例のように構成すれば、配線基板１の位置ずれを防止することができる。以下、これら第２及び第３の実施例について順に説明する。
【００２１】
まず、第２の実施例では、図４に示すように、ケース６を載置固定する治具１２に、配線基板１を押さえ付ける押さえ部材１３を回動支点１４の回りに回動可能に設けた。そして、配線基板１を押さえなくても良いときは、押さえ部材１３を図４中２点鎖線で示す位置に回動させておく。これに対して、配線基板１をケース６に接着した接着剤７が硬化していない状態で、ワイヤボンディングを行うときは、押さえ部材１３を図４中実線で示す位置に回動させる。これにより、該押さえ部材１３によって配線基板１を押さえ付けることが可能な構成となっている。この結果、ワイヤボンディングを行なったときに、配線基板１が位置ずれすることを確実に防止できる。
【００２２】
尚、上述した以外の第２の実施例の構成は、第１の実施例の構成と同じ構成となっている。従って、第２の実施例においても、第１の実施例と同様な作用効果を得ることができる。
【００２３】
次に、第３の実施例では、図５に示すように、ワイヤボンダー１５のヘッド部１６に、配線基板１を押さえ付ける押さえ部材１７を設けた。この構成の場合、ワイヤボンディングを行うときには、図５に示すように、ワイヤボンダー１５の押さえ部材１７が配線基板１を押さえ付けるように構成されている。これにより、ワイヤボンディングを行なったときに、配線基板１が位置ずれすることを確実に防止できる。尚、上述した以外の第３の実施例の構成は、第１の実施例または第２の実施例の構成と同じ構成となっている。
【図面の簡単な説明】
【図１】本発明の第１の実施例を示すものであり、製造工程を示す図
【図２】ワイヤボンディングの引っ張り強度の試験結果を示す図
【図３】引っ張り強度の試験を行なったときの構成を示す図
【図４】本発明の第２の実施例を示す縦断側面図
【図５】本発明の第３の実施例を示す図４相当図
【符号の説明】
１は配線基板、２は導体パターン、２ａはボンディングランド、３は半導体チップ、６はケース（基板支持部材）、７は接着剤、８はアルミ線、９は導体パターン、９ａはボンディングランド、１３は押さえ部材、１５はワイヤボンダー、１７は押さえ部材を示す。[0001]
BACKGROUND OF THE INVENTION
The present invention, while bonding the substrate to the substrate support member relates to the production how a semiconductor device constituted both by wire bonding.
[0002]
[Prior art]
For example, when housing a wiring board on which a plurality of semiconductor chips are mounted in a case, first, the wiring board is bonded to the inner bottom portion of the case via an adhesive. Subsequently, the adhesive is cured by heating the bonded wiring board and case. The bonding lands provided on the wiring board and the bonding lands provided on the case are connected by wire bonding.
[0003]
Here, since the bonding land is made of Cu, for example, the surface of the bonding land is oxidized and contaminated when the adhesive is heated and cured. If wire bonding is performed while the bonding land remains oxidized and contaminated, there is a problem that bonding strength (bonding strength) is insufficient. For this reason, in the conventional configuration, after performing the step of heat-curing the adhesive, the step of removing the oxide film and contaminants on the bonding land by, for example, plasma cleaning is performed, and then the wire bonding is performed. It was. As another countermeasure, there is a method in which a strip mask is applied on the bonding land before the step of curing the adhesive. In the case of this method, after performing the step of curing the adhesive, the step of removing the strip mask is performed, and then the wire bonding is performed.
[0004]
[Problems to be solved by the invention]
However, each method of the conventional configuration has a drawback that the number of work steps increases. Further, in the case of the method of removing the oxide film and contaminants on the bonding land by plasma cleaning, it is difficult to completely remove the oxide film and contaminants. Furthermore, in the method of applying a strip mask on the bonding land, it is difficult to avoid oxidation and contamination of the bonding land when an adhesive having a long curing time or an adhesive having a high curing temperature is used.
[0005]
On the other hand, as a method of preventing the bonding land from being oxidized, there is a method of curing the adhesive in an atmosphere of low oxygen concentration such as N 2 or a reducing atmosphere. However, this method has a drawback that outgas generated from an adhesive or the like or contaminants in the curing furnace adhere to the bonding land.
[0006]
An object of the present invention, the bonding strength of the wire bonding can be sufficiently strong, yet, it is to provide a manufacturing how a semiconductor device capable of reducing the number of working processes.
[0007]
[Means for Solving the Problems]
According to the first aspect of the present invention, after the substrate is bonded to the substrate support member via the adhesive, the substrate and the substrate support member are wire-bonded before the adhesive is cured. Therefore, wire bonding can be performed in a state where the bonding land is not oxidized or contaminated. For this reason, the bonding strength becomes sufficiently strong, and work steps such as a cleaning step and a mask step can be eliminated. When the bonding process is performed, since a pressing member for holding the substrate so as not to be displaced is provided in a jig for mounting and fixing the substrate support member, when wire bonding is performed The substrate can be reliably prevented from being displaced.
[0008]
According to invention of Claim 2, it can apply to the structure which adhere | attaches a wiring board to a case and wire-bonds between both. According to the invention of claim 3, since the pressing member for holding the substrate so as not to be displaced when the bonding step is executed is provided in the head part of the wire bonder, Almost the same effect can be obtained .
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. First, the wiring board 1 used in the present embodiment will be described with reference to FIGS. The wiring board 1 is composed of a printed wiring board, a ceramic board, or the like, and a conductor pattern 2 is formed in advance on the upper surface thereof as shown in FIG. As shown in FIG. 1B, various semiconductor chips 3 and various components (not shown) are mounted on the upper surface of the wiring board 1 as described below.
[0010]
That is, for example, an Ag paste 4 is applied on the conductor pattern 2 of the wiring board 1. Subsequently, various semiconductor chips 3 and various components are mounted on the upper surface of the wiring substrate 1 by being placed on the Ag paste 4. When the Ag paste 4 is cured, the semiconductor chip 3 and the conductor pattern 2 of the wiring board 1 are connected by wire bonding. In this case, for example, wire bonding is performed using Au wire 5.
[0011]
Next, an operation process in which the wiring board 1 having such a configuration is accommodated and fixed in, for example, a case 6 that is a board support member will be described with reference to FIGS. 1 (c), (d), and (e). To do. First, as shown in FIG. 1C, an adhesion process is performed in which the wiring substrate 1 is adhered to the inner bottom surface of the case 6 via an adhesive 7. In this example, as the adhesive 7, for example, a silicone rubber adhesive (specifically, CY52-223A / B manufactured by Toray Silicone; addition reaction type (two-component type) silicone rubber) was used. Further, the thickness dimension of the adhesive 7 is set to, for example, about 200 μm.
[0012]
Subsequently, as shown in FIG. 1 (d), a bonding step of wire bonding between the wiring substrate 1 and the case 6 is performed in a state (uncured state) before the adhesive 7 is cured. In this case, for example, wire bonding (for example, wire bonding by ultrasonic waves) is performed using an aluminum wire 8. Then, a bonding land 2a which is a conductor pattern 2 provided on the right end portion of the upper surface of the wiring board 1, and a bonding land 9a which is a conductor pattern 9 provided on the step portion 6a on the right end portion of the inner bottom portion of the case 6 are provided. The aluminum wire 8 is used for wire bonding. Here, when wire bonding is performed in a state where the adhesive 7 is not cured, the wiring board 1 feels to be displaced, but actually, the displacement is not caused.
[0013]
The reason why the positional displacement of the wiring board 1 did not occur is that the lateral force acting on the wiring board 1 during wire bonding is very weak, whereas the adhesive 7 is uncured. This is because the force for bonding the wiring board 1 and the case 6 is a considerably strong force. The reason why the bonding force is quite strong is that the entire lower surface of the wiring board 1 and the inner bottom surface of the case 6 are bonded to each other through the adhesive 7. The lateral force acting on the wiring board 1 during wire bonding is generated when the aluminum wire 8 is pulled out after the aluminum wire 8 is connected to the bonding land 2a on the wiring board 1 side, or the land 2a, 9a This is a force generated when the aluminum wire 8 is cut after the aluminum wire 8 is connected, and is very weak. In this example, ultrasonic wire bonding was performed using an aluminum wire having an outer diameter of, for example, 250 μm, but the wiring board 1 was not displaced at all.
[0014]
Now, after performing the said wire bonding process, the process which hardens the adhesive agent 7 is performed. In this case, the adhesive 7 is cured by heating the case 6 and the wiring board 1 using a curing furnace or a heating high-temperature bath having a well-known configuration. Thereby, the operation of attaching the wiring board 1 to the case 6 is completed.
[0015]
According to the present embodiment having such a configuration, when the wiring board 1 is attached to the case 6, the wiring board 1 is bonded to the case 6 via the adhesive 7, and then the adhesive board 7 is in an uncured state. Wire bonding was performed between 1 and the case 6. Thereafter, the adhesive 7 is heated and cured. In the case of this configuration, the wire bonding can be executed in a clean state before the bonding lands 2a and 9a of the wiring board 1 and the case 6 are oxidized and contaminated. For this reason, the bonding strength (bonding strength) of wire bonding can be sufficiently increased. When the bonding strength is increased in this way, sufficient bonding strength can be easily obtained even if the power of wire bonding is reduced. Further, in this embodiment, work steps such as a cleaning step and a mask step required in the conventional configuration are not necessary. For this reason, the number of work processes can be reduced.
[0016]
Here, FIG. 2 shows the result of examining the bonding strength of the aluminum wire 8 of this example, specifically, the tensile strength of the portion where the aluminum wire 8 is bonded. In FIG. 2, the data on the right is the result of examining the bonding strength of the aluminum wire of the comparative example. In this comparative example, the wiring board is bonded to the case via an adhesive, the adhesive is heated and cured in a curing furnace, and then the wiring board and the case are wire bonded. From FIG. 2, it can be seen that the bonding strength in the present example has become sufficiently strong.
[0017]
When examining the bonding strength, a tensile strength test was conducted with the structure shown in FIG. That is, as shown in FIG. 3, the case 6 was bonded and fixed to the upper surface of the jig 10 serving as a substrate platform via the double-sided adhesive tape 11. Further, the difference between the comparative example and the conventional configuration in which the cleaning process is performed is that in the conventional configuration, a cleaning process for removing oxide films and contaminants on the bonding lands is performed before wire bonding. And even if it performs a cleaning process, since an oxide film and contaminant cannot be removed completely, the bonding strength in the case of a conventional structure is a grade which becomes a little better than a comparative example.
[0018]
In the above embodiment, the aluminum wire 8 is used when performing wire bonding, but an Au wire or the like may be used instead. Furthermore, in the said Example, although applied to the wire bonding using an ultrasonic wave, you may apply to the wire bonding using an ultrasonic wave and a heat | fever, and may apply to the wire bonding using a heat | fever. .
[0019]
Furthermore, in the said Example, although applied to the structure which attaches the wiring board 1 to the case 6, it is not restricted to this, You may apply to the structure which attaches a semiconductor chip to a wiring board. Specifically, for example, when the above-described silicone rubber adhesive is used as an adhesive for adhering a semiconductor chip to a wiring board, the bonding land is oxidized and contaminated when the adhesive is heated and cured. For this reason, in substantially the same manner as in the above embodiment, after bonding the semiconductor chip to the wiring board, wire bonding is performed between the semiconductor chip and the wiring board in a state before the adhesive is cured. It is preferable to make it harden | cure.
[0020]
As described above, if wire bonding is performed in a state where the adhesive 7 that adheres the wiring board 1 to the case 6 is not cured, the wiring board 1 may be displaced. For example, if the wire to be used is thick and a large lateral force acts on the wiring board 1 during wire bonding, or an adhesive that has a very weak adhesive strength of an uncured adhesive must be used. There are cases where this is not possible. In such a case, if it is configured as in the second embodiment shown in FIG. 4 or the third embodiment shown in FIG. 5, the displacement of the wiring board 1 can be prevented. Hereinafter, these second and third embodiments will be described in order.
[0021]
First, in the second embodiment, as shown in FIG. 4, a holding member 13 for pressing the wiring board 1 is provided on the jig 12 for mounting and fixing the case 6 so as to be rotatable around the rotation fulcrum 14. It was. And when it is not necessary to hold down the wiring board 1, the holding member 13 is rotated to the position shown with the dashed-two dotted line in FIG. On the other hand, when wire bonding is performed in a state where the adhesive 7 that bonds the wiring board 1 to the case 6 is not cured, the pressing member 13 is rotated to a position indicated by a solid line in FIG. Thus, the wiring board 1 can be pressed by the pressing member 13. As a result, it is possible to reliably prevent the wiring board 1 from being displaced when wire bonding is performed.
[0022]
The configuration of the second embodiment other than that described above is the same as that of the first embodiment. Therefore, also in the second embodiment, it is possible to obtain the same effects as those in the first embodiment.
[0023]
Next, in the third embodiment, as shown in FIG. 5, a pressing member 17 that presses the wiring board 1 is provided on the head portion 16 of the wire bonder 15. In the case of this configuration, when wire bonding is performed, the pressing member 17 of the wire bonder 15 is configured to press the wiring board 1 as shown in FIG. Thereby, it is possible to reliably prevent the wiring board 1 from being displaced when wire bonding is performed. The configuration of the third embodiment other than that described above is the same as that of the first embodiment or the second embodiment.
[Brief description of the drawings]
FIG. 1 is a view showing a manufacturing process according to a first embodiment of the present invention, and FIG. 2 is a view showing a tensile strength test result of wire bonding. FIG. 3 is a view showing a tensile strength test. FIG. 4 is a longitudinal side view showing a second embodiment of the present invention. FIG. 5 is a diagram corresponding to FIG. 4 showing a third embodiment of the present invention.
1 is a wiring board, 2 is a conductor pattern, 2a is a bonding land, 3 is a semiconductor chip, 6 is a case (substrate support member), 7 is an adhesive, 8 is an aluminum wire, 9 is a conductor pattern, 9a is a bonding land, 13 Indicates a pressing member, 15 indicates a wire bonder, and 17 indicates a pressing member.

Claims (3)

配線基板や半導体基板等からなる基板と、この基板を載置支持する基板支持部材とを備え、前記基板を前記基板支持部材に接着した状態で、両者をワイヤボンディングして成る半導体装置の製造方法において、
前記基板を前記基板支持部材に接着剤を介して接着する接着工程と、
この接着工程を実行した後、前記接着剤を硬化させる前に、前記基板と前記基板支持部材との間をワイヤボンディングするボンディング工程と、
このボンディング工程を実行した後、前記接着剤を硬化させる硬化工程とを備え、更に、
前記ボンディング工程を実行するときに、前記基板が位置ずれしないように前記基板を押さえ付ける押さえ部材を、前記基板支持部材を載置固定する治具に設けたことを特徴とする半導体装置の製造方法。A method of manufacturing a semiconductor device, comprising: a substrate made of a wiring substrate, a semiconductor substrate, and the like; and a substrate support member for placing and supporting the substrate, and bonding the substrates to the substrate support member while wire bonding them together. In
An adhesion step of adhering the substrate to the substrate support member via an adhesive;
After performing this bonding step, before curing the adhesive, a bonding step of wire bonding between the substrate and the substrate support member,
And after performing this bonding step, a curing step of curing the adhesive,
A method of manufacturing a semiconductor device, wherein a pressing member for pressing the substrate so that the substrate is not displaced when the bonding step is performed is provided in a jig for mounting and fixing the substrate support member. . 前記基板を、配線基板により構成すると共に、
前記基板支持部材を、前記配線基板を収容するケースにより構成したことを特徴とする請求項１記載の半導体装置の製造方法。The substrate is constituted by a wiring substrate,
The method of manufacturing a semiconductor device according to claim 1, wherein the substrate support member is configured by a case that accommodates the wiring substrate. 配線基板や半導体基板等からなる基板と、この基板を載置支持する基板支持部材とを備え、前記基板を前記基板支持部材に接着した状態で、両者をワイヤボンディングして成る半導体装置の製造方法において、
前記基板を前記基板支持部材に接着剤を介して接着する接着工程と、
この接着工程を実行した後、前記接着剤を硬化させる前に、前記基板と前記基板支持部材との間をワイヤボンディングするボンディング工程と、
このボンディング工程を実行した後、前記接着剤を硬化させる硬化工程とを備え、更に、
前記ボンディング工程を実行するときに、前記基板が位置ずれしないように前記基板を押さえ付ける押さえ部材を、ワイヤボンダーのヘッド部に設けたことを特徴とする半導体装置の製造方法。A method of manufacturing a semiconductor device, comprising: a substrate made of a wiring substrate, a semiconductor substrate, and the like; and a substrate support member for placing and supporting the substrate, and bonding the substrates to the substrate support member while wire bonding them together. In
An adhesion step of adhering the substrate to the substrate support member via an adhesive;
After performing this bonding step, before curing the adhesive, a bonding step of wire bonding between the substrate and the substrate support member,
And after performing this bonding step, a curing step of curing the adhesive,
A method of manufacturing a semiconductor device, comprising: a wire bonder head portion provided with a pressing member for pressing the substrate so that the substrate is not displaced when the bonding step is performed.
JP17292898A 1998-06-19 1998-06-19 Manufacturing method of semiconductor device Expired - Fee Related JP3726498B2 (en)

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Publication number Priority date Publication date Assignee Title
CN104392943A (en) * 2014-12-05 2015-03-04 常州瑞华电力电子器件有限公司 Preparation method of low-stress high-weldability nickel-plated electrode

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JP2003039728A (en) * 2001-07-31 2003-02-13 Sanyo Electric Co Ltd Circuit unit and optical printing head with the same
JP2008227361A (en) * 2007-03-15 2008-09-25 Nec Corp Electronic equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104392943A (en) * 2014-12-05 2015-03-04 常州瑞华电力电子器件有限公司 Preparation method of low-stress high-weldability nickel-plated electrode

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