JP3696710B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP3696710B2
JP3696710B2 JP02955297A JP2955297A JP3696710B2 JP 3696710 B2 JP3696710 B2 JP 3696710B2 JP 02955297 A JP02955297 A JP 02955297A JP 2955297 A JP2955297 A JP 2955297A JP 3696710 B2 JP3696710 B2 JP 3696710B2
Authority
JP
Japan
Prior art keywords
film
region
silicon film
silicon
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP02955297A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10214973A (ja
JPH10214973A5 (https=
Inventor
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP02955297A priority Critical patent/JP3696710B2/ja
Priority to US09/014,639 priority patent/US6355509B1/en
Priority to KR1019980003625A priority patent/KR19980071177A/ko
Priority to KR1019980003635A priority patent/KR19980071187A/ko
Publication of JPH10214973A publication Critical patent/JPH10214973A/ja
Publication of JPH10214973A5 publication Critical patent/JPH10214973A5/ja
Application granted granted Critical
Publication of JP3696710B2 publication Critical patent/JP3696710B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP02955297A 1997-01-28 1997-01-28 半導体装置の作製方法 Expired - Fee Related JP3696710B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP02955297A JP3696710B2 (ja) 1997-01-28 1997-01-28 半導体装置の作製方法
US09/014,639 US6355509B1 (en) 1997-01-28 1998-01-28 Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication
KR1019980003625A KR19980071177A (ko) 1997-01-28 1998-01-30 반도체 장치의 제작 방법
KR1019980003635A KR19980071187A (ko) 1997-01-28 1998-01-31 액체운송 장치 및 액체운송 펌프의 제어방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02955297A JP3696710B2 (ja) 1997-01-28 1997-01-28 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004276793A Division JP4317105B2 (ja) 2004-09-24 2004-09-24 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH10214973A JPH10214973A (ja) 1998-08-11
JPH10214973A5 JPH10214973A5 (https=) 2004-12-24
JP3696710B2 true JP3696710B2 (ja) 2005-09-21

Family

ID=12279316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02955297A Expired - Fee Related JP3696710B2 (ja) 1997-01-28 1997-01-28 半導体装置の作製方法

Country Status (2)

Country Link
JP (1) JP3696710B2 (https=)
KR (1) KR19980071177A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4712156B2 (ja) * 1999-05-10 2011-06-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH10214973A (ja) 1998-08-11
KR19980071177A (ko) 1998-10-26

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