JP3670267B2 - レーザ加工方法 - Google Patents

レーザ加工方法 Download PDF

Info

Publication number
JP3670267B2
JP3670267B2 JP2003067281A JP2003067281A JP3670267B2 JP 3670267 B2 JP3670267 B2 JP 3670267B2 JP 2003067281 A JP2003067281 A JP 2003067281A JP 2003067281 A JP2003067281 A JP 2003067281A JP 3670267 B2 JP3670267 B2 JP 3670267B2
Authority
JP
Japan
Prior art keywords
substrate
cutting
region
processing method
laser processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003067281A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003334812A (ja
JP2003334812A5 (enExample
Inventor
文嗣 福世
憲志 福満
直己 内山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=29715898&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3670267(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP2003067281A priority Critical patent/JP3670267B2/ja
Publication of JP2003334812A publication Critical patent/JP2003334812A/ja
Publication of JP2003334812A5 publication Critical patent/JP2003334812A5/ja
Application granted granted Critical
Publication of JP3670267B2 publication Critical patent/JP3670267B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]

Landscapes

  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Laser Beam Processing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Dicing (AREA)
JP2003067281A 2002-03-12 2003-03-12 レーザ加工方法 Expired - Lifetime JP3670267B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003067281A JP3670267B2 (ja) 2002-03-12 2003-03-12 レーザ加工方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002067372 2002-03-12
JP2002-67372 2002-03-12
JP2002-67348 2002-03-12
JP2002067348 2002-03-12
JP2003067281A JP3670267B2 (ja) 2002-03-12 2003-03-12 レーザ加工方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004280377A Division JP4509720B2 (ja) 2002-03-12 2004-09-27 レーザ加工方法

Publications (3)

Publication Number Publication Date
JP2003334812A JP2003334812A (ja) 2003-11-25
JP2003334812A5 JP2003334812A5 (enExample) 2005-04-07
JP3670267B2 true JP3670267B2 (ja) 2005-07-13

Family

ID=29715898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003067281A Expired - Lifetime JP3670267B2 (ja) 2002-03-12 2003-03-12 レーザ加工方法

Country Status (1)

Country Link
JP (1) JP3670267B2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
AU2003211581A1 (en) 2002-03-12 2003-09-22 Hamamatsu Photonics K.K. Method of cutting processed object
DE60313900T2 (de) 2002-03-12 2008-01-17 Hamamatsu Photonics K.K., Hamamatsu Methode zur Trennung von Substraten
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
TWI520269B (zh) 2002-12-03 2016-02-01 濱松赫德尼古斯股份有限公司 Cutting method of semiconductor substrate
FR2852250B1 (fr) 2003-03-11 2009-07-24 Jean Luc Jouvin Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau
WO2004080643A1 (ja) 2003-03-12 2004-09-23 Hamamatsu Photonics K.K. レーザ加工方法
JP4563097B2 (ja) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
JP2005251986A (ja) * 2004-03-04 2005-09-15 Disco Abrasive Syst Ltd ウエーハの分離検出方法および分離検出装置
KR101336523B1 (ko) * 2004-03-30 2013-12-03 하마마츠 포토닉스 가부시키가이샤 레이저 가공 방법 및 반도체 칩
EP1772245B1 (en) * 2004-07-30 2014-05-07 Mitsuboshi Diamond Industrial Co., Ltd. Vertical crack forming method and vertical crack forming device in substrate
JP4917257B2 (ja) 2004-11-12 2012-04-18 浜松ホトニクス株式会社 レーザ加工方法
JP4781661B2 (ja) 2004-11-12 2011-09-28 浜松ホトニクス株式会社 レーザ加工方法
JP2006150385A (ja) * 2004-11-26 2006-06-15 Canon Inc レーザ割断方法
JP4776994B2 (ja) * 2005-07-04 2011-09-21 浜松ホトニクス株式会社 加工対象物切断方法
JP4552791B2 (ja) * 2005-07-20 2010-09-29 セイコーエプソン株式会社 基板分割方法
JP4816390B2 (ja) * 2005-11-16 2011-11-16 株式会社デンソー 半導体チップの製造方法および半導体チップ
JP4816406B2 (ja) * 2005-11-16 2011-11-16 株式会社デンソー ウェハの加工方法
CN101681822B (zh) 2007-05-25 2012-06-13 浜松光子学株式会社 切断用加工方法
JP5093922B2 (ja) * 2007-09-27 2012-12-12 シチズンファインテックミヨタ株式会社 圧電デバイスの製造方法
JP5258671B2 (ja) * 2009-05-28 2013-08-07 三菱化学株式会社 窒化物系半導体素子の製造方法
JP6059499B2 (ja) 2012-10-05 2017-01-11 リンテック株式会社 表面保護シート
JP5998968B2 (ja) * 2013-02-04 2016-09-28 旭硝子株式会社 ガラス基板の切断方法、ガラス基板及び近赤外線カットフィルタガラス
KR102399356B1 (ko) * 2017-03-10 2022-05-19 삼성전자주식회사 기판, 기판의 쏘잉 방법, 및 반도체 소자

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11219966B1 (en) 2018-12-29 2022-01-11 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11826846B2 (en) 2018-12-29 2023-11-28 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11901181B2 (en) 2018-12-29 2024-02-13 Wolfspeed, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11911842B2 (en) 2018-12-29 2024-02-27 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11034056B2 (en) 2019-05-17 2021-06-15 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11654596B2 (en) 2019-05-17 2023-05-23 Wolfspeed, Inc. Silicon carbide wafers with relaxed positive bow and related methods

Also Published As

Publication number Publication date
JP2003334812A (ja) 2003-11-25

Similar Documents

Publication Publication Date Title
JP3670267B2 (ja) レーザ加工方法
JP4606741B2 (ja) 加工対象物切断方法
JP3624909B2 (ja) レーザ加工方法
KR100853057B1 (ko) 레이저 가공 방법
WO2004080643A1 (ja) レーザ加工方法
JP3722731B2 (ja) レーザ加工方法
JP4509720B2 (ja) レーザ加工方法
WO2002022301A1 (fr) Procede et dispositif d'usinage par rayonnement laser
JP4409840B2 (ja) 加工対象物切断方法
JP4167094B2 (ja) レーザ加工方法
JP4837320B2 (ja) 加工対象物切断方法
JP3935189B2 (ja) レーザ加工方法
JP4463796B2 (ja) レーザ加工方法
JP4509719B2 (ja) レーザ加工方法
JP2005313238A (ja) レーザ加工方法
WO2004080642A1 (ja) レーザ加工方法
JP4527098B2 (ja) レーザ加工方法
JP3867109B2 (ja) レーザ加工方法
JP3867003B2 (ja) レーザ加工方法
JP4146863B2 (ja) 半導体基板の切断方法
JP3867110B2 (ja) レーザ加工方法
JP3869850B2 (ja) レーザ加工方法
JP2004268103A (ja) レーザ加工方法
KR100813351B1 (ko) 레이저 가공 방법
JP2006205259A (ja) レーザ加工方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040524

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040524

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20040524

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20040607

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040728

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040927

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041116

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050117

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20050118

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050404

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050413

R150 Certificate of patent or registration of utility model

Ref document number: 3670267

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313532

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090422

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090422

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100422

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100422

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110422

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120422

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130422

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130422

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140422

Year of fee payment: 9

R157 Certificate of patent or utility model (correction)

Free format text: JAPANESE INTERMEDIATE CODE: R157

EXPY Cancellation because of completion of term