JP3657369B2 - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
- Publication number
- JP3657369B2 JP3657369B2 JP28600196A JP28600196A JP3657369B2 JP 3657369 B2 JP3657369 B2 JP 3657369B2 JP 28600196 A JP28600196 A JP 28600196A JP 28600196 A JP28600196 A JP 28600196A JP 3657369 B2 JP3657369 B2 JP 3657369B2
- Authority
- JP
- Japan
- Prior art keywords
- drain region
- film
- interlayer insulating
- insulating film
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000010408 film Substances 0.000 claims description 83
- 239000010410 layer Substances 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 28
- 239000011159 matrix material Substances 0.000 claims description 20
- 239000004973 liquid crystal related substance Substances 0.000 claims description 16
- 239000011229 interlayer Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 4
- 230000010365 information processing Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000009719 polyimide resin Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000010407 anodic oxide Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28600196A JP3657369B2 (ja) | 1996-10-08 | 1996-10-08 | 半導体装置およびその作製方法 |
| TW086108046A TW334582B (en) | 1996-06-18 | 1997-06-11 | Semiconductor device and method of fabtricating same |
| US08/873,846 US6040589A (en) | 1996-06-18 | 1997-06-12 | Semiconductor device having larger contact hole area than an area covered by contact electrode in the hole |
| KR1019970025473A KR100493976B1 (ko) | 1996-06-18 | 1997-06-18 | 반도체장치,액티브매트릭스장치,및액티브매트릭스장치를구비한프로젝터 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28600196A JP3657369B2 (ja) | 1996-10-08 | 1996-10-08 | 半導体装置およびその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10115841A JPH10115841A (ja) | 1998-05-06 |
| JPH10115841A5 JPH10115841A5 (enExample) | 2004-10-14 |
| JP3657369B2 true JP3657369B2 (ja) | 2005-06-08 |
Family
ID=17698729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28600196A Expired - Fee Related JP3657369B2 (ja) | 1996-06-18 | 1996-10-08 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3657369B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102052434B1 (ko) | 2017-12-11 | 2019-12-05 | 엘지디스플레이 주식회사 | 컨택 구조 및 이를 이용한 전계발광 표시장치 |
-
1996
- 1996-10-08 JP JP28600196A patent/JP3657369B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10115841A (ja) | 1998-05-06 |
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