JP3655901B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3655901B2
JP3655901B2 JP2002238032A JP2002238032A JP3655901B2 JP 3655901 B2 JP3655901 B2 JP 3655901B2 JP 2002238032 A JP2002238032 A JP 2002238032A JP 2002238032 A JP2002238032 A JP 2002238032A JP 3655901 B2 JP3655901 B2 JP 3655901B2
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JP
Japan
Prior art keywords
wiring
temperature
semiconductor device
interlayer insulating
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002238032A
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English (en)
Japanese (ja)
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JP2004077283A5 (https=
JP2004077283A (ja
Inventor
健司 吉田
剛 藤巻
寛 中澤
浩二 宮本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002238032A priority Critical patent/JP3655901B2/ja
Priority to US10/642,222 priority patent/US7157368B2/en
Publication of JP2004077283A publication Critical patent/JP2004077283A/ja
Publication of JP2004077283A5 publication Critical patent/JP2004077283A5/ja
Application granted granted Critical
Publication of JP3655901B2 publication Critical patent/JP3655901B2/ja
Priority to US11/561,293 priority patent/US7485475B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2856Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G01R31/2858Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/286External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2868Complete testing stations; systems; procedures; software aspects
    • G01R31/287Procedures; Software aspects

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  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
JP2002238032A 2002-08-19 2002-08-19 半導体装置の製造方法 Expired - Lifetime JP3655901B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002238032A JP3655901B2 (ja) 2002-08-19 2002-08-19 半導体装置の製造方法
US10/642,222 US7157368B2 (en) 2002-08-19 2003-08-18 Method of accelerating test of semiconductor device
US11/561,293 US7485475B2 (en) 2002-08-19 2006-11-17 Method of accelerating test of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002238032A JP3655901B2 (ja) 2002-08-19 2002-08-19 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2004077283A JP2004077283A (ja) 2004-03-11
JP2004077283A5 JP2004077283A5 (https=) 2005-02-03
JP3655901B2 true JP3655901B2 (ja) 2005-06-02

Family

ID=32021567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002238032A Expired - Lifetime JP3655901B2 (ja) 2002-08-19 2002-08-19 半導体装置の製造方法

Country Status (2)

Country Link
US (2) US7157368B2 (https=)
JP (1) JP3655901B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070128827A1 (en) * 2001-09-12 2007-06-07 Faris Sadeg M Method and system for increasing yield of vertically integrated devices
US7397260B2 (en) * 2005-11-04 2008-07-08 International Business Machines Corporation Structure and method for monitoring stress-induced degradation of conductive interconnects
US11031342B2 (en) 2017-11-15 2021-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2612210B2 (ja) 1990-03-05 1997-05-21 日本電信電話株式会社 半導体集積回路配線の評価方法
JP3847807B2 (ja) * 1995-01-30 2006-11-22 財団法人国際科学振興財団 半導体装置
JPH1012687A (ja) 1996-06-20 1998-01-16 Matsushita Electric Works Ltd 半導体チップの検査方法
US5930587A (en) * 1997-08-27 1999-07-27 Lucent Technologies Stress migration evaluation method
US6342733B1 (en) * 1999-07-27 2002-01-29 International Business Machines Corporation Reduced electromigration and stressed induced migration of Cu wires by surface coating
JP2001237348A (ja) * 2000-02-23 2001-08-31 Hitachi Ltd 半導体装置およびその製造方法
JP2002057252A (ja) * 2000-08-07 2002-02-22 Hitachi Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP2004077283A (ja) 2004-03-11
US20070077762A1 (en) 2007-04-05
US7485475B2 (en) 2009-02-03
US7157368B2 (en) 2007-01-02
US20040106219A1 (en) 2004-06-03

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