JP2004077283A5 - - Google Patents
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- Publication number
- JP2004077283A5 JP2004077283A5 JP2002238032A JP2002238032A JP2004077283A5 JP 2004077283 A5 JP2004077283 A5 JP 2004077283A5 JP 2002238032 A JP2002238032 A JP 2002238032A JP 2002238032 A JP2002238032 A JP 2002238032A JP 2004077283 A5 JP2004077283 A5 JP 2004077283A5
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- temperature
- semiconductor device
- semiconductor
- accelerated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 6
- 229910052802 copper Inorganic materials 0.000 claims 6
- 239000010949 copper Substances 0.000 claims 6
- 238000013508 migration Methods 0.000 claims 5
- 230000005012 migration Effects 0.000 claims 5
- 238000012360 testing method Methods 0.000 claims 5
- 239000000956 alloy Substances 0.000 claims 3
- 229910045601 alloy Inorganic materials 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 230000001133 acceleration Effects 0.000 claims 2
- 239000011229 interlayer Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 claims 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 238000010998 test method Methods 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002238032A JP3655901B2 (ja) | 2002-08-19 | 2002-08-19 | 半導体装置の製造方法 |
| US10/642,222 US7157368B2 (en) | 2002-08-19 | 2003-08-18 | Method of accelerating test of semiconductor device |
| US11/561,293 US7485475B2 (en) | 2002-08-19 | 2006-11-17 | Method of accelerating test of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002238032A JP3655901B2 (ja) | 2002-08-19 | 2002-08-19 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004077283A JP2004077283A (ja) | 2004-03-11 |
| JP2004077283A5 true JP2004077283A5 (https=) | 2005-02-03 |
| JP3655901B2 JP3655901B2 (ja) | 2005-06-02 |
Family
ID=32021567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002238032A Expired - Lifetime JP3655901B2 (ja) | 2002-08-19 | 2002-08-19 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US7157368B2 (https=) |
| JP (1) | JP3655901B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070128827A1 (en) * | 2001-09-12 | 2007-06-07 | Faris Sadeg M | Method and system for increasing yield of vertically integrated devices |
| US7397260B2 (en) * | 2005-11-04 | 2008-07-08 | International Business Machines Corporation | Structure and method for monitoring stress-induced degradation of conductive interconnects |
| US11031342B2 (en) | 2017-11-15 | 2021-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package and method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2612210B2 (ja) | 1990-03-05 | 1997-05-21 | 日本電信電話株式会社 | 半導体集積回路配線の評価方法 |
| JP3847807B2 (ja) * | 1995-01-30 | 2006-11-22 | 財団法人国際科学振興財団 | 半導体装置 |
| JPH1012687A (ja) | 1996-06-20 | 1998-01-16 | Matsushita Electric Works Ltd | 半導体チップの検査方法 |
| US5930587A (en) * | 1997-08-27 | 1999-07-27 | Lucent Technologies | Stress migration evaluation method |
| US6342733B1 (en) * | 1999-07-27 | 2002-01-29 | International Business Machines Corporation | Reduced electromigration and stressed induced migration of Cu wires by surface coating |
| JP2001237348A (ja) * | 2000-02-23 | 2001-08-31 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JP2002057252A (ja) * | 2000-08-07 | 2002-02-22 | Hitachi Ltd | 半導体装置及びその製造方法 |
-
2002
- 2002-08-19 JP JP2002238032A patent/JP3655901B2/ja not_active Expired - Lifetime
-
2003
- 2003-08-18 US US10/642,222 patent/US7157368B2/en not_active Expired - Fee Related
-
2006
- 2006-11-17 US US11/561,293 patent/US7485475B2/en not_active Expired - Fee Related
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