JP3634618B2 - 半導体装置製造用ウエットエッチング装置 - Google Patents

半導体装置製造用ウエットエッチング装置 Download PDF

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Publication number
JP3634618B2
JP3634618B2 JP07209198A JP7209198A JP3634618B2 JP 3634618 B2 JP3634618 B2 JP 3634618B2 JP 07209198 A JP07209198 A JP 07209198A JP 7209198 A JP7209198 A JP 7209198A JP 3634618 B2 JP3634618 B2 JP 3634618B2
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JP
Japan
Prior art keywords
inner tank
semiconductor device
manufacturing
wet etching
etching apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP07209198A
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English (en)
Japanese (ja)
Other versions
JPH1126430A (ja
Inventor
承 鍵 李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH1126430A publication Critical patent/JPH1126430A/ja
Application granted granted Critical
Publication of JP3634618B2 publication Critical patent/JP3634618B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
JP07209198A 1997-06-25 1998-03-20 半導体装置製造用ウエットエッチング装置 Expired - Fee Related JP3634618B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1997-27094 1997-06-25
KR1019970027094A KR100252221B1 (ko) 1997-06-25 1997-06-25 반도체장치 제조용 습식 식각장치 및 습식 식각장치내의 식각액 순환방법

Publications (2)

Publication Number Publication Date
JPH1126430A JPH1126430A (ja) 1999-01-29
JP3634618B2 true JP3634618B2 (ja) 2005-03-30

Family

ID=19511091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07209198A Expired - Fee Related JP3634618B2 (ja) 1997-06-25 1998-03-20 半導体装置製造用ウエットエッチング装置

Country Status (4)

Country Link
US (1) US6001216A (ko)
JP (1) JP3634618B2 (ko)
KR (1) KR100252221B1 (ko)
TW (1) TW436912B (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6325932B1 (en) 1999-11-30 2001-12-04 Mykrolis Corporation Apparatus and method for pumping high viscosity fluid
KR100685918B1 (ko) * 2000-12-27 2007-02-22 엘지.필립스 엘시디 주식회사 유리기판 식각장치 및 이를 이용한 유리기판 식각방법
US6766818B2 (en) * 2001-04-06 2004-07-27 Akrion, Llc Chemical concentration control device
US6946055B2 (en) * 2001-08-22 2005-09-20 International Business Machines Corporation Method for recovering an organic solvent from a waste stream containing supercritical CO2
DE10162191A1 (de) * 2001-12-17 2003-06-18 Wolfgang Coenen Automatisches Vielkanalätzsystem
KR20040041763A (ko) * 2002-11-11 2004-05-20 삼성전자주식회사 반도체 웨이퍼 세정시스템 및 그 방법
JP2006066727A (ja) * 2004-08-27 2006-03-09 Toshiba Corp 半導体製造装置及び薬液交換方法
JP5079516B2 (ja) 2004-11-23 2012-11-21 インテグリス・インコーポレーテッド 可変定位置ディスペンスシステムのためのシステムおよび方法
JP5339914B2 (ja) 2005-11-21 2013-11-13 インテグリス・インコーポレーテッド 低減された形状要因を有するポンプのためのシステムと方法
KR101243509B1 (ko) 2005-12-02 2013-03-20 엔테그리스, 아이엔씨. 펌프에서의 압력 보상을 위한 시스템 및 방법
KR101364385B1 (ko) 2005-12-02 2014-02-17 엔테그리스, 아이엔씨. 펌프 제어기를 인터페이스시키는 ｉ/ｏ 시스템, 방법 및디바이스
US8083498B2 (en) 2005-12-02 2011-12-27 Entegris, Inc. System and method for position control of a mechanical piston in a pump
TWI402423B (zh) 2006-02-28 2013-07-21 Entegris Inc 用於一幫浦操作之系統及方法
US8137758B2 (en) * 2007-11-08 2012-03-20 Nucor Corporation Dip coating system with stepped apron recovery
JP4738401B2 (ja) 2007-11-28 2011-08-03 三菱電機株式会社 空気調和機
US20100154826A1 (en) * 2008-12-19 2010-06-24 Tokyo Electron Limited System and Method For Rinse Optimization
DE102014107594B4 (de) * 2014-05-28 2016-01-14 Hanwha Q Cells Gmbh Schwallkasten für ein nasschemisches Arbeitsverfahren und nasschemisches Verfahren zur Bearbeitung von Halbleiterwafern mit einem solchen Schwallkasten
US11532493B2 (en) * 2018-07-30 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Wet bench and chemical treatment method using the same
TWI790493B (zh) * 2020-10-23 2023-01-21 辛耘企業股份有限公司 半導體製程廢處理液的排放暫存裝置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0296334A (ja) * 1988-10-01 1990-04-09 Nisso Eng Kk 高温エッチング液の循環方法
JP3072876B2 (ja) * 1993-09-17 2000-08-07 日曹エンジニアリング株式会社 エッチング液の精製方法
US5904572A (en) * 1996-12-24 1999-05-18 Samsung Electronics Co., Ltd. Wet etching station and a wet etching method adapted for utilizing the same

Also Published As

Publication number Publication date
TW436912B (en) 2001-05-28
KR19990003266A (ko) 1999-01-15
JPH1126430A (ja) 1999-01-29
KR100252221B1 (ko) 2000-04-15
US6001216A (en) 1999-12-14

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