JP3601649B2 - 電界効果トランジスタ - Google Patents

電界効果トランジスタ Download PDF

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Publication number
JP3601649B2
JP3601649B2 JP33856697A JP33856697A JP3601649B2 JP 3601649 B2 JP3601649 B2 JP 3601649B2 JP 33856697 A JP33856697 A JP 33856697A JP 33856697 A JP33856697 A JP 33856697A JP 3601649 B2 JP3601649 B2 JP 3601649B2
Authority
JP
Japan
Prior art keywords
layer
resistance
barrier layer
low
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP33856697A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10242451A (ja
Inventor
誠 稲井
弘之 瀬戸
富士雄 奥井
進 福田
昶 有吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP33856697A priority Critical patent/JP3601649B2/ja
Priority to EP19970122413 priority patent/EP0851510A3/de
Priority to KR1019970071954A priority patent/KR100548047B1/ko
Priority to CA002225844A priority patent/CA2225844C/en
Priority to NO19976070A priority patent/NO322204B1/no
Priority to US08/998,248 priority patent/US6008509A/en
Publication of JPH10242451A publication Critical patent/JPH10242451A/ja
Application granted granted Critical
Publication of JP3601649B2 publication Critical patent/JP3601649B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP33856697A 1996-12-25 1997-12-09 電界効果トランジスタ Expired - Lifetime JP3601649B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP33856697A JP3601649B2 (ja) 1996-12-25 1997-12-09 電界効果トランジスタ
EP19970122413 EP0851510A3 (de) 1996-12-25 1997-12-18 Gebietswirksamer transistor
KR1019970071954A KR100548047B1 (ko) 1996-12-25 1997-12-22 전계효과트랜지스터
CA002225844A CA2225844C (en) 1996-12-25 1997-12-23 Field effect transistor
NO19976070A NO322204B1 (no) 1996-12-25 1997-12-23 Felteffekttransistor
US08/998,248 US6008509A (en) 1996-12-25 1997-12-24 Field effect transistor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP34479596 1996-12-25
JP8-344795 1996-12-25
JP33856697A JP3601649B2 (ja) 1996-12-25 1997-12-09 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPH10242451A JPH10242451A (ja) 1998-09-11
JP3601649B2 true JP3601649B2 (ja) 2004-12-15

Family

ID=26576133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33856697A Expired - Lifetime JP3601649B2 (ja) 1996-12-25 1997-12-09 電界効果トランジスタ

Country Status (6)

Country Link
US (1) US6008509A (de)
EP (1) EP0851510A3 (de)
JP (1) JP3601649B2 (de)
KR (1) KR100548047B1 (de)
CA (1) CA2225844C (de)
NO (1) NO322204B1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994727A (en) * 1997-09-30 1999-11-30 Samsung Electronics Co., Ltd. High performance gaas field effect transistor structure
JP2001077353A (ja) * 1999-06-30 2001-03-23 Toshiba Corp 高電子移動度トランジスタ及び電力増幅器
US6821829B1 (en) 2000-06-12 2004-11-23 Freescale Semiconductor, Inc. Method of manufacturing a semiconductor component and semiconductor component thereof
US20070029643A1 (en) * 2003-03-21 2007-02-08 Johnson Mark A L Methods for nanoscale structures from optical lithography and subsequent lateral growth
US20060276043A1 (en) * 2003-03-21 2006-12-07 Johnson Mark A L Method and systems for single- or multi-period edge definition lithography
US6929987B2 (en) * 2003-12-23 2005-08-16 Hrl Laboratories, Llc Microelectronic device fabrication method
WO2010116700A1 (ja) * 2009-04-07 2010-10-14 住友化学株式会社 半導体基板、半導体基板の製造方法、および電子デバイス

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095973A (ja) * 1983-10-31 1985-05-29 Fujitsu Ltd 半導体装置
JPS60189268A (ja) * 1984-03-08 1985-09-26 Fujitsu Ltd 半導体装置
US4745447A (en) * 1985-06-14 1988-05-17 American Telephone And Telegraph Company, At&T Bell Laboratories Gallium arsenide on gallium indium arsenide Schottky barrier device
JPS62239584A (ja) * 1986-04-11 1987-10-20 Hitachi Ltd 半導体装置
US5091759A (en) * 1989-10-30 1992-02-25 Texas Instruments Incorporated Heterostructure field effect transistor
US5150822A (en) * 1989-10-27 1992-09-29 The Wellcome Foundation Limited Mixing head for dispensing an actine ingredient
JP2924239B2 (ja) * 1991-03-26 1999-07-26 三菱電機株式会社 電界効果トランジスタ
US5331410A (en) * 1991-04-26 1994-07-19 Sumitomo Electric Industries, Ltd. Field effect transistor having a sandwiched channel layer
FR2684806B1 (fr) * 1991-12-06 1994-03-18 Picogiga Sa Composant semiconducteur de puissance de type transistor a effet de champ, notamment a heterojonction.
JPH06333956A (ja) * 1992-08-26 1994-12-02 Sanyo Electric Co Ltd 電界効果型半導体装置
JP2611735B2 (ja) * 1993-12-22 1997-05-21 日本電気株式会社 ヘテロ接合ｆｅｔ
JP2661555B2 (ja) * 1994-08-16 1997-10-08 日本電気株式会社 ヘテロ接合電界効果トランジスタ

Also Published As

Publication number Publication date
EP0851510A2 (de) 1998-07-01
NO322204B1 (no) 2006-08-28
KR19980064470A (ko) 1998-10-07
CA2225844A1 (en) 1998-06-25
NO976070L (no) 1998-06-26
EP0851510A3 (de) 1999-02-24
NO976070D0 (no) 1997-12-23
CA2225844C (en) 2001-11-06
KR100548047B1 (ko) 2007-11-09
US6008509A (en) 1999-12-28
JPH10242451A (ja) 1998-09-11

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