JP3593492B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP3593492B2
JP3593492B2 JP2000182306A JP2000182306A JP3593492B2 JP 3593492 B2 JP3593492 B2 JP 3593492B2 JP 2000182306 A JP2000182306 A JP 2000182306A JP 2000182306 A JP2000182306 A JP 2000182306A JP 3593492 B2 JP3593492 B2 JP 3593492B2
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JP
Japan
Prior art keywords
plasma
silicon nitride
nitride film
plasma processing
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000182306A
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English (en)
Japanese (ja)
Other versions
JP2001358119A (ja
Inventor
高男 荒瀬
元彦 吉開
剛 斉藤
正道 坂口
裕昭 石村
隆浩 下村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi Ltd filed Critical Hitachi High Technologies Corp
Priority to JP2000182306A priority Critical patent/JP3593492B2/ja
Priority to TW090104362A priority patent/TW520536B/zh
Priority to KR10-2001-0010446A priority patent/KR100511468B1/ko
Priority to US09/799,485 priority patent/US6617255B2/en
Publication of JP2001358119A publication Critical patent/JP2001358119A/ja
Priority to US10/404,647 priority patent/US7098138B2/en
Application granted granted Critical
Publication of JP3593492B2 publication Critical patent/JP3593492B2/ja
Priority to US11/253,698 priority patent/US20060048892A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
JP2000182306A 2000-06-13 2000-06-13 プラズマ処理方法 Expired - Fee Related JP3593492B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000182306A JP3593492B2 (ja) 2000-06-13 2000-06-13 プラズマ処理方法
TW090104362A TW520536B (en) 2000-06-13 2001-02-26 Plasma processing method for working the surface of semiconductor devices
KR10-2001-0010446A KR100511468B1 (ko) 2000-06-13 2001-02-28 반도체소자의 표면가공을 행하는 플라즈마처리방법
US09/799,485 US6617255B2 (en) 2000-06-13 2001-03-07 Plasma processing method for working the surface of semiconductor devices
US10/404,647 US7098138B2 (en) 2000-06-13 2003-04-02 Plasma processing method for working the surface of semiconductor devices
US11/253,698 US20060048892A1 (en) 2000-06-13 2005-10-20 Plasma processing method for working the surface of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000182306A JP3593492B2 (ja) 2000-06-13 2000-06-13 プラズマ処理方法

Publications (2)

Publication Number Publication Date
JP2001358119A JP2001358119A (ja) 2001-12-26
JP3593492B2 true JP3593492B2 (ja) 2004-11-24

Family

ID=18683094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000182306A Expired - Fee Related JP3593492B2 (ja) 2000-06-13 2000-06-13 プラズマ処理方法

Country Status (4)

Country Link
US (3) US6617255B2 (zh)
JP (1) JP3593492B2 (zh)
KR (1) KR100511468B1 (zh)
TW (1) TW520536B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3593492B2 (ja) * 2000-06-13 2004-11-24 株式会社日立製作所 プラズマ処理方法
US6678367B1 (en) * 2000-08-21 2004-01-13 SBC Properties, INC Method, system and medium for plug-and-play downloading of speed dial lists
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
US7988816B2 (en) 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
US7235491B2 (en) * 2005-05-04 2007-06-26 United Microelectronics Corp. Method of manufacturing spacer
US8698135B2 (en) * 2012-03-15 2014-04-15 West Virginia University Plasma-chlorinated electrode and organic electronic devices using the same
JP6078419B2 (ja) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
JP6772117B2 (ja) 2017-08-23 2020-10-21 株式会社日立ハイテク エッチング方法およびエッチング装置
US11217454B2 (en) 2019-04-22 2022-01-04 Hitachi High-Tech Corporation Plasma processing method and etching apparatus
WO2021255812A1 (ja) 2020-06-16 2021-12-23 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4832787A (en) * 1988-02-19 1989-05-23 International Business Machines Corporation Gas mixture and method for anisotropic selective etch of nitride
US6077384A (en) * 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
JPH06132253A (ja) * 1992-10-15 1994-05-13 Sumitomo Metal Ind Ltd 窒化珪素膜の反応性イオンエッチング方法
US5756402A (en) * 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film
JP2962181B2 (ja) * 1995-02-01 1999-10-12 ヤマハ株式会社 ドライエッチング方法及び装置
JPH10209121A (ja) * 1997-01-17 1998-08-07 Hitachi Ltd エッチング方法及びエッチング装置
US6136211A (en) * 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
JP3066007B2 (ja) * 1998-06-24 2000-07-17 株式会社日立製作所 プラズマ処理装置およびプラズマ処理方法
US6146954A (en) * 1998-07-21 2000-11-14 Advanced Micro Devices, Inc. Minimizing transistor size in integrated circuits
US6287974B1 (en) * 1999-06-30 2001-09-11 Lam Research Corporation Method of achieving top rounding and uniform etch depths while etching shallow trench isolation features
US6235643B1 (en) * 1999-08-10 2001-05-22 Applied Materials, Inc. Method for etching a trench having rounded top and bottom corners in a silicon substrate
US6180533B1 (en) * 1999-08-10 2001-01-30 Applied Materials, Inc. Method for etching a trench having rounded top corners in a silicon substrate
JP3593492B2 (ja) * 2000-06-13 2004-11-24 株式会社日立製作所 プラズマ処理方法

Also Published As

Publication number Publication date
US7098138B2 (en) 2006-08-29
JP2001358119A (ja) 2001-12-26
KR100511468B1 (ko) 2005-08-31
US20060048892A1 (en) 2006-03-09
KR20010112055A (ko) 2001-12-20
US20040175940A1 (en) 2004-09-09
US6617255B2 (en) 2003-09-09
US20010055885A1 (en) 2001-12-27
TW520536B (en) 2003-02-11

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