JP3539176B2 - Electronic component mounting method - Google Patents

Electronic component mounting method Download PDF

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Publication number
JP3539176B2
JP3539176B2 JP01108998A JP1108998A JP3539176B2 JP 3539176 B2 JP3539176 B2 JP 3539176B2 JP 01108998 A JP01108998 A JP 01108998A JP 1108998 A JP1108998 A JP 1108998A JP 3539176 B2 JP3539176 B2 JP 3539176B2
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Japan
Prior art keywords
electronic component
solder
substrate
mounting
temperature
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JP01108998A
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Japanese (ja)
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JPH11214439A (en
Inventor
秀喜 永福
忠彦 境
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body

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  • Wire Bonding (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、電子部品を基板に実装する電子部品の実装方法に関するものである。
【０００２】
【従来の技術】
電子部品を基板に実装する方法として、電子部品または基板の電極に予め半田バンプやプリコート半田などの半田部を形成する方法が知られている。実装時に加熱されることによりこれらの半田部が溶融し、電子部品を基板の電極に半田付けする。また、電子部品と基板の隙間はアンダーフィル樹脂で封止され、アンダーフィル樹脂は半田接合部を包み込んで補強するとともに異物の侵入を防ぐ機能を有する。
【０００３】
【発明が解決しようとする課題】
ところで、上記アンダーフィル樹脂は、電子部品の搭載前に基板に塗布される場合がある。電子部品の小型化によって電子部品と基板の隙間は狭くなり、実装後のアンダーフィル樹脂の注入が困難になっていることなどの理由によるものである。この場合には、半田部を溶融させるための加熱と、アンダーフィル樹脂を熱硬化させるための加熱が同一の加熱工程で行われる。
【０００４】
半田部が溶融して電極に半田付けされた後の形状は、ヒートサイクルによる熱応力に対する強度の面から、半田が被接合面のできるだけ広い範囲に拡がった形状となるのが望ましい。しかしながらアンダーフィル樹脂を予め基板上に塗布する従来の方法では、半田部とアンダーフィル樹脂とが同時に加熱されるため、半田部の溶融時には周囲のアンダーフィル樹脂の硬化が既に開始していた。このため硬化によって粘度が上昇したアンダーフィル樹脂は、溶融半田が被接合面に沿って拡がるのを阻害し、その結果前述の望ましい形状の接合部が得られず形状不良を発生する場合があった。このように、従来の電子部品の実装方法では、接合部の形状不良により接合部の強度が確保されず、接合部の信頼性が低下するという問題点があった。
【０００５】
そこで本発明は、接合部の信頼性が高い電子部品の実装方法を提供することを目的とする。
【０００６】
【課題を解決するための手段】
請求項１記載の電子部品の実装方法は、電子部品と基板の電極の少なくともいずれか一方に半田部を形成しておき、この半田部を介して電子部品を基板に接合する電子部品の実装方法であって、基板の電極上またはこの電極上に形成された半田部上に、半田融点温度より高い融点温度を有する硬化剤を含むボンドを塗布する工程と、前記電子部品を保持した圧着ツールを昇降手段により昇降させて前記ボンドが塗布された基板に前記電子部品を搭載する工程と、この電子部品を押圧手段によって基板に押圧しながら加熱手段によって加熱することにより前記ボンドを硬化させる工程と、前記ボンドが硬化を開始する前に前記半田部を溶融させて前記電子部品を前記基板に半田付けする工程とを含み、前記電子部品を加熱する工程において前記半田部の温度が制御切換温度範囲に到達するまでは、前記押圧手段を制御することにより電子部品を基板に押圧する押圧荷重を制御し、制御切換温度範囲に到達した後は前記昇降手段を制御することにより電子部品の基板に対する高さ位置を制御するようにした。
【０００７】
請求項２記載の電子部品の実装方法は、前記半田部の温度が前記制御切換温度範囲に到達するのに必要な時間を実験値に基づいて設定しておき、前記電子部品を加熱する工程においてこの設定された時間に基づいて制御方式を切り換えるようにした。
【０００８】
請求項３記載の電子部品の実装方法は、請求項１記載の電子部品の実装方法であって、前記制御切換温度範囲が前記半田部の融点温度の６０％に設定される設定温度と半田融点温度の間であるようにした。
【０００９】
請求項４記載の電子部品の実装方法は、請求項１記載の電子部品の実装方法であって、前記制御切換温度範囲に到達したことを圧着ツールに設けられた温度計測手段によって検出するようにした。
【００１０】
請求項５記載の電子部品の実装方法は、請求項４記載の電子部品の実装方法であって、前記制御切換温度範囲が前記半田部の融点温度であるようにした。
【００１１】
各請求項記載の発明によれば、半田融点温度より高い融点温度を有する硬化剤を含むボンドをバンプ付電子部品の搭載前に基板に塗布し、半田バンプが溶融した後にボンドの硬化を開始させ、かつ半田バンプの溶融後はバンプ付電子部品を保持する高さ位置を制御することにより、溶融半田の電極上面での流動が阻害されず、良好な形状の接合部を得ることができる。
【００１２】
【発明の実施の形態】
次に本発明の実施の形態を図面を参照して説明する。図１（ａ），（ｂ）、図２（ａ），（ｂ）は本発明の一実施の形態のバンプ付電子部品の実装方法の工程説明図、図３（ａ）は同バンプ付電子部品の実装方法の加熱温度の時間的変化を示すグラフ、図３（ｂ）は同バンプ付電子部品の実装方法のバンプ付き電子部品の高さ位置および押圧荷重の時間的変化を示すグラフ、図３（ｃ）は同バンプ付電子部品の実装方法のボンドの粘度の時間的変化を示すグラフである。なお図１（ａ），（ｂ）、図２（ａ），（ｂ）はバンプ付電子部品の実装方法を工程順に示すものである。
【００１３】
図１（ａ）において、基板１上には電極２が形成されている。この電極２上を覆って基板１上にディスペンサ３によりボンド４が塗布される。ボンド４は半田の融点温度より高い融点温度を有する硬化剤を含む熱硬化性の接着材である。次に、このボンド４が塗布された基板１に半田バンプ６が形成されたバンプ付電子部品５が搭載される。
【００１４】
バンプ付電子部品５は図１（ｂ）に示すように、圧着ツール７に吸着して保持されており、圧着ツール７は昇降手段８により昇降する。また圧着ツール７は押圧手段９により下方に押圧され、圧着ツール７の下面に保持したバンプ付電子部品５の半田バンプ６を基板１の電極２に押圧する。これにより、半田バンプ６の表面に形成された酸化膜は破壊され、半田の露出部が形成される。
【００１５】
昇降手段８および押圧手段９は制御部１０に接続されており、制御部１０によって昇降手段８および押圧手段９を制御することにより、バンプ付電子部品５を基板１に実装する際のバンプ付電子部品５の高さ位置、および半田バンプ６が電極２を押圧する押圧荷重を制御することができる。なお、昇降手段８および押圧手段９としては、送りねじとモータの組み合わせなどを用いることにより、単一の駆動機構によって昇降手段８および押圧手段９を兼ねさせてもよい。
【００１６】
次に、バンプ付電子部品５の半田バンプ６が電極２に当接したならば、図２（ａ）に示すように押圧手段９を制御して圧着ツール７を介してバンプ付電子部品５を基板１に対して押圧するとともに、圧着ツール７に内蔵された加熱手段１１によりバンプ付電子部品５を加熱する。また圧着ツール７には温度計測手段が設けられており、求められた圧着ツール７の温度は制御部１０に伝えられ、制御部１０は所定の温度プロファイルに従って加熱手段１１を制御する。
【００１７】
このときの加熱温度、バンプ付電子部品５の押圧荷重および高さ位置、ボンド４の粘度のそれぞれの変化の状態について図３を参照して説明する。図３（ａ），（ｂ），（ｃ）において、タイミングｔ０はバンプ付電子部品５のバンプ６を基板１に当接させて押圧を開始したタイミングを示している。加熱温度は図３（ａ）の折れ線ａで示すように、加熱開始タイミングｔ０から上昇し、予熱温度として設定される所定温度Ｔ１に到達した後、所定時間の間ほぼ一定温度に維持される。この一定温度を保つ時間は、ボンド４の粘度の低下を確保するための加熱工程である。
【００１８】
このとき、図３（ｂ）に示すように電子部品５を基板１に押圧する押圧荷重は、押圧手段９を制御することにより折れ線ｂ１に示すように一定荷重値Ｆに保持される。そして押圧を継続している間バンプ付電子部品５の高さ位置は、折れ線ｂ２（破線で示す）に示すように時間の経過とともに半田が押圧されて変形することによりわずかづつ下降する。この過程でバンプ６の高さのばらつきが吸収され、全てのバンプが電極の上面に押圧される。
【００１９】
その結果、バンプ６と電極２の接合面積を十分に確保することができ、信頼性の高い接合部を得ることができる。このとき、加熱によって半田が軟化するため低荷重で半田を変形させることができ、バンプ付電子部品５に高荷重を負荷することによる破損などのトラブルを防止することができる。また、この加熱工程においてボンド４の粘度は図３（ｃ）のグラフｃに示すように加熱の進行につれて低下する。
【００２０】
次に図３（ａ）に示すタイミングｔｃ、すなわち半田融点温度Ｔｍ（１８４℃）の６０％に設定された設定温度と半田融点温度Ｔｍの間の制御切換温度範囲（図中斜線範囲）に到達するために必要な時間として予め実験によって設定される制御切換時間に到達するタイミングにて、図３（ｂ）に示すように圧着ツール７の制御方式が切換えられる。すなわち、タイミングｔｃになったならば、押圧荷重の制御から昇降手段８による圧着ツール７の高さ位置制御に切換えられ、その結果バンプ付電子部品５の基板１に対する高さは、図２（ｂ）に示すように高さｈに保持される。
【００２１】
この制御温度切換範囲の具体例としては、Ｓｎ中にＰｂを３７％含ませた一般的な半田（融点温度１８４℃）では、１１０℃〜１８４℃、またＳｎ中にＡｇを３．５％含ませた高融点型の半田（融点温度２２１℃）では、１３３℃〜２２１℃の範囲となる。このように制御切換温度範囲を広く取っているのは、加熱工程では加熱条件に影響する要因が多く、実際の昇温速度のばらつきが避けられないからである。
【００２２】
この後図３（ａ）に示すように加熱温度は上昇し、タイミングｔｍにて半田融点温度Ｔｍに到達して半田バンプ６は溶融する。そして溶融した半田は電極２の上面と半田接合される。このとき、半田バンプ６の周囲はボンド４が充填されて無酸素状態となっているため、半田バンプ６を電極に押圧する際に露出した半田は再び酸化されることはなく、良好な半田接合が行われる。また、半田接合に際しフラックスを使用しないので、半田接合後の洗浄を必要としない。
【００２３】
この過程では、バンプ付電子部品５の高さは昇降手段８によってｈに保たれているため、溶融した半田バンプ６が押しつぶされることがない。またボンド４に含まれる硬化剤の融点温度は半田の融点温度Ｔｍ以上であるため、半田の溶融時点ではまだボンド４は熱硬化を開始していない。このため溶融半田の周囲のボンド４は低粘度であり、溶融半田の電極２上面での流動を妨げない。したがって溶融半田は電極２の上面に沿って濡れ拡がり、図２（ｂ）に示すように、底面が広く鼓状断面を有する強度の優れた良好な接合部を得ることができる。
【００２４】
この後、所定の加熱温度Ｔ２を所定時間保持することによりボンド４は完全硬化して接合部を固定し、バンプ付電子部品５の実装が完了する。
【００２５】
なお、上記実施の形態では、半田バンプの温度が予め設定された制御切換温度範囲内に到達するのに必要な時間を実験結果に基づいて設定し、加熱工程においてこの時間に基づいて制御方式を切り換えるようにしているが、圧着ツール７の温度を温度センサなどの温度計測手段によって求め、この検出温度が制御温度切換範囲としての半田融点温度Ｔｍに到達したならば、制御方式を押圧荷重の制御から電子部品５の高さ位置の制御に切り換えるようにしても良い。
【００２６】
【発明の効果】
本発明によれば、半田融点温度より高い融点温度を有する硬化剤を含むボンドをバンプ付電子部品の搭載前に基板に塗布し、半田バンプが溶融した後にボンドの硬化を開始させ、かつ半田バンプの溶融後はバンプ付電子部品を保持する高さ位置を制御するようにしたので、溶融半田の流動が阻害されず、良好な形状の接合部を得ることができる。また半田接合に際してフラックスを使用する必要がなく、実装後の洗浄を必要とせずに信頼性を確保することができる。
【図面の簡単な説明】
【図１】（ａ）本発明の一実施の形態のバンプ付電子部品の実装方法の工程説明図
（ｂ）本発明の一実施の形態のバンプ付電子部品の実装方法の工程説明図
【図２】（ａ）本発明の一実施の形態のバンプ付電子部品の実装方法の工程説明図
（ｂ）本発明の一実施の形態のバンプ付電子部品の実装方法の工程説明図
【図３】（ａ）本発明の一実施の形態のバンプ付電子部品の実装方法の加熱温度の時間的変化を示すグラフ
（ｂ）本発明の一実施の形態のバンプ付電子部品の実装方法のバンプ付き電子部品の高さ位置および押圧荷重の時間的変化を示すグラフ
（ｃ）本発明の一実施の形態のバンプ付電子部品の実装方法のボンドの粘度の時間的変化を示すグラフ
【符号の説明】
１ 基板
２ 電極
４ ボンド
５ バンプ付電子部品
６ 半田バンプ
７ 圧着ツール
８ 昇降手段
９ 押圧手段
１０ 制御部[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an electronic component mounting method for mounting an electronic component on a substrate.
[0002]
[Prior art]
As a method for mounting an electronic component on a substrate, there is known a method in which a solder portion such as a solder bump or pre-coated solder is previously formed on an electrode of the electronic component or the substrate. These solder portions are melted by being heated during mounting, and the electronic components are soldered to the electrodes of the substrate. Further, the gap between the electronic component and the substrate is sealed with an underfill resin, and the underfill resin has a function of wrapping and reinforcing the solder joint portion and preventing foreign matter from entering.
[0003]
[Problems to be solved by the invention]
By the way, the above-mentioned underfill resin may be applied to a substrate before electronic components are mounted. This is because the gap between the electronic component and the substrate is reduced due to the miniaturization of the electronic component, and it becomes difficult to inject the underfill resin after mounting. In this case, heating for melting the solder portion and heating for thermally curing the underfill resin are performed in the same heating step.
[0004]
The shape after the solder portion is melted and soldered to the electrode is desirably a shape in which the solder spreads as wide as possible on the surface to be joined from the viewpoint of strength against thermal stress due to a heat cycle. However, in the conventional method of applying the underfill resin on the substrate in advance, since the solder portion and the underfill resin are simultaneously heated, the surrounding underfill resin has already been cured when the solder portion is melted. For this reason, the underfill resin whose viscosity has increased due to curing hinders the spread of the molten solder along the surface to be joined, and as a result, a joint having the above-described desirable shape cannot be obtained, and a shape defect may occur. . As described above, in the conventional mounting method of an electronic component, there is a problem that the strength of the joint is not secured due to a defective shape of the joint, and the reliability of the joint is reduced.
[0005]
Then, an object of the present invention is to provide a mounting method of an electronic component with high reliability of a joint.
[0006]
[Means for Solving the Problems]
2. The electronic component mounting method according to claim 1, wherein a solder portion is formed on at least one of the electronic component and an electrode of the substrate, and the electronic component is bonded to the substrate via the solder portion. A step of applying a bond containing a curing agent having a melting point higher than the solder melting point on an electrode of the substrate or on a solder portion formed on the electrode, and a crimping tool holding the electronic component. A step of mounting the electronic component on the substrate to which the bond is applied by lifting and lowering by the raising and lowering means, and a step of curing the bond by heating the electronic component against the substrate by pressing means and heating by heating means. Melting the solder portion before the bond starts to cure and soldering the electronic component to the substrate, wherein the step of heating the electronic component comprises: Until the temperature of the field reaches the control switching temperature range, a pressing load for pressing the electronic component against the substrate is controlled by controlling the pressing means, and after the control switching temperature range is reached, the elevating means is controlled. Thereby, the height position of the electronic component with respect to the substrate is controlled.
[0007]
The method for mounting an electronic component according to claim 2, wherein a time required for the temperature of the solder portion to reach the control switching temperature range is set based on an experimental value, and the electronic component is heated. The control method is switched based on the set time.
[0008]
According to a third aspect of the present invention, there is provided the electronic component mounting method according to the first aspect, wherein the control switching temperature range is set to 60% of a melting point temperature of the solder portion and a solder melting point. To be between the temperatures.
[0009]
According to a fourth aspect of the present invention, there is provided the electronic component mounting method according to the first aspect, wherein the temperature measurement means provided in the crimping tool detects that the control switching temperature range has been reached. did.
[0010]
According to a fifth aspect of the present invention, there is provided the electronic component mounting method according to the fourth aspect, wherein the control switching temperature range is a melting point temperature of the solder portion.
[0011]
According to the invention described in each claim, a bond containing a curing agent having a melting point temperature higher than the melting point temperature of the solder is applied to the substrate before mounting the electronic component with bumps, and the curing of the bond is started after the solder bump is melted. In addition, by controlling the height position where the electronic component with the bump is held after the solder bump is melted, the flow of the molten solder on the upper surface of the electrode is not hindered, and a joint having a good shape can be obtained.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, embodiments of the present invention will be described with reference to the drawings. FIGS. 1A, 1B, 2A, and 2B are process explanatory views of a method for mounting an electronic component with bumps according to an embodiment of the present invention, and FIG. FIG. 3B is a graph showing the temporal change of the heating temperature of the component mounting method, and FIG. 3B is a graph showing the temporal change of the height position and the pressing load of the bumped electronic component in the method of mounting the electronic component with the bump. 3 (c) is a graph showing the change over time of the viscosity of the bond in the mounting method of the electronic component with bumps. 1A, 1B, 2A, and 2B show a method of mounting an electronic component with bumps in the order of steps.
[0013]
In FIG. 1A, an electrode 2 is formed on a substrate 1. A bond 4 is applied by a dispenser 3 on the substrate 1 so as to cover the electrode 2. The bond 4 is a thermosetting adhesive containing a curing agent having a melting point higher than the melting point of the solder. Next, the electronic component 5 with bumps on which the solder bumps 6 are formed is mounted on the substrate 1 on which the bond 4 is applied.
[0014]
As shown in FIG. 1B, the electronic component with bumps 5 is held by being attracted to a crimping tool 7, and the crimping tool 7 is moved up and down by elevating means 8. The pressing tool 7 is pressed downward by pressing means 9, and presses the solder bumps 6 of the electronic component with bumps 5 held on the lower surface of the pressing tool 7 against the electrodes 2 of the substrate 1. Thus, the oxide film formed on the surface of the solder bump 6 is broken, and an exposed portion of the solder is formed.
[0015]
The lifting / lowering means 8 and the pressing means 9 are connected to the control unit 10, and the control unit 10 controls the lifting / lowering means 8 and the pressing means 9 so that the bumped electronic component 5 can be mounted on the substrate 1. The height position of the component 5 and the pressing load with which the solder bump 6 presses the electrode 2 can be controlled. Note that a combination of a feed screw and a motor may be used as the lifting / lowering means 8 and the pressing means 9 so that a single driving mechanism may serve as the lifting / lowering means 8 and the pressing means 9.
[0016]
Next, when the solder bumps 6 of the electronic component 5 with bumps come into contact with the electrodes 2, the pressing means 9 is controlled to control the electronic component 5 with bumps through the crimping tool 7 as shown in FIG. While pressing against the substrate 1, the electronic component 5 with bumps is heated by the heating means 11 built in the crimping tool 7. Further, the crimping tool 7 is provided with a temperature measuring means, and the obtained temperature of the crimping tool 7 is transmitted to the control unit 10, and the control unit 10 controls the heating means 11 according to a predetermined temperature profile.
[0017]
The state of the heating temperature, the pressing load and the height position of the bumped electronic component 5, and the state of the viscosity of the bond 4 will be described with reference to FIG. 3A, 3B, and 3C, a timing t0 indicates a timing at which the bump 6 of the electronic component 5 with bump is brought into contact with the substrate 1 and the pressing is started. As shown by the polygonal line a in FIG. 3A, the heating temperature rises from the heating start timing t0, and after reaching the predetermined temperature T1 set as the preheating temperature, is maintained at a substantially constant temperature for a predetermined time. The time during which this constant temperature is maintained is a heating step for ensuring a decrease in the viscosity of the bond 4.
[0018]
At this time, the pressing load for pressing the electronic component 5 against the substrate 1 as shown in FIG. 3B is maintained at a constant load value F as shown by the polygonal line b1 by controlling the pressing means 9. Then, while the pressing is continued, the height position of the bumped electronic component 5 is gradually lowered due to the pressing and deformation of the solder with the passage of time as shown by a broken line b2 (shown by a broken line). In this process, variations in the height of the bumps 6 are absorbed, and all the bumps are pressed against the upper surfaces of the electrodes.
[0019]
As a result, a sufficient bonding area between the bump 6 and the electrode 2 can be secured, and a highly reliable bonding portion can be obtained. At this time, since the solder is softened by heating, the solder can be deformed with a low load, and troubles such as breakage caused by applying a high load to the bumped electronic component 5 can be prevented. Further, in this heating step, the viscosity of the bond 4 decreases as the heating progresses as shown in a graph c of FIG.
[0020]
Next, a timing tc shown in FIG. 3A, that is, a control switching temperature range (hatched range in the figure) between the set temperature set to 60% of the solder melting point temperature Tm (184 ° C.) and the solder melting point temperature Tm is reached. As shown in FIG. 3B, the control method of the crimping tool 7 is switched at a timing when a control switching time set in advance by an experiment is reached as a time required for performing the control. That is, when the timing tc is reached, the control is switched from the control of the pressing load to the control of the height position of the crimping tool 7 by the lifting / lowering means 8, and as a result, the height of the electronic component 5 with bumps relative to the substrate 1 is changed as shown in FIG. ) Is maintained at the height h.
[0021]
As a specific example of the control temperature switching range, a general solder containing 37% of Pb in Sn (melting point temperature: 184 ° C.) is 110 ° C. to 184 ° C., and 3.5% of Ag is contained in Sn. In the case of a high melting point type solder (melting point temperature: 221 ° C.), the range is 133 ° C. to 221 ° C. The reason why the control switching temperature range is widened is that there are many factors that affect the heating conditions in the heating step, and the variation in the actual heating rate cannot be avoided.
[0022]
Thereafter, as shown in FIG. 3A, the heating temperature rises, reaches the solder melting point temperature Tm at timing tm, and the solder bump 6 is melted. Then, the melted solder is soldered to the upper surface of the electrode 2. At this time, since the periphery of the solder bump 6 is filled with the bond 4 and is in an oxygen-free state, the solder exposed when the solder bump 6 is pressed against the electrode is not oxidized again, and good solder bonding is performed. Is performed. In addition, since no flux is used for soldering, cleaning after soldering is not required.
[0023]
In this process, the height of the bumped electronic component 5 is maintained at h by the elevating means 8, so that the molten solder bump 6 is not crushed. Further, since the melting point temperature of the curing agent contained in the bond 4 is equal to or higher than the melting point temperature Tm of the solder, the bond 4 has not yet started thermosetting at the time of melting of the solder. Therefore, the bond 4 around the molten solder has a low viscosity and does not prevent the flow of the molten solder on the upper surface of the electrode 2. Therefore, the molten solder spreads along the upper surface of the electrode 2, and as shown in FIG. 2 (b), it is possible to obtain a good joint having a wide bottom surface and a drum-shaped cross section and excellent strength.
[0024]
Thereafter, by maintaining the predetermined heating temperature T2 for a predetermined time, the bond 4 is completely cured to fix the bonding portion, and the mounting of the electronic component 5 with bumps is completed.
[0025]
In the above embodiment, the time required for the temperature of the solder bump to reach the preset control switching temperature range is set based on the experimental result, and the control method is set based on this time in the heating step. The temperature of the crimping tool 7 is determined by a temperature measuring means such as a temperature sensor. If the detected temperature reaches the solder melting point temperature Tm as a control temperature switching range, the control method is changed to the control of the pressing load. May be switched to control of the height position of the electronic component 5.
[0026]
【The invention's effect】
According to the present invention, a bond containing a curing agent having a melting point temperature higher than the solder melting point temperature is applied to the substrate before mounting the electronic component with bumps, and after the solder bump is melted, curing of the bond is started, and the solder bump is melted. After melting, the height position for holding the electronic component with bumps is controlled, so that the flow of the molten solder is not hindered and a joint having a good shape can be obtained. Further, it is not necessary to use a flux at the time of soldering, and reliability can be secured without requiring cleaning after mounting.
[Brief description of the drawings]
FIG. 1A is a process explanatory view of a method for mounting an electronic component with bumps according to an embodiment of the present invention; FIG. 1B is a process explanatory view of a method for mounting an electronic component with bumps according to an embodiment of the present invention; (A) Process explanatory diagram of a method for mounting an electronic component with bumps according to one embodiment of the present invention (b) Process explanatory diagram of a method for mounting an electronic component with bumps according to one embodiment of the present invention [FIG. (A) A graph showing a temporal change of a heating temperature in a method for mounting an electronic component with bumps according to an embodiment of the present invention. (B) An electronic device with bumps according to a method for mounting an electronic component with bumps according to an embodiment of the present invention. Graph showing the temporal change of the height position and the pressing load of the component (c) Graph showing the temporal change of the viscosity of the bond in the mounting method of the electronic component with bumps according to one embodiment of the present invention.
DESCRIPTION OF SYMBOLS 1 Substrate 2 Electrode 4 Bond 5 Electronic component with bump 6 Solder bump 7 Crimping tool 8 Elevating means 9 Pressing means 10 Control part

Claims (5)

電子部品と基板の電極の少なくともいずれか一方に半田部を形成しておき、この半田部を介して電子部品を基板に接合する電子部品の実装方法であって、基板の電極上またはこの電極上に形成された半田部上に、半田融点温度より高い融点温度を有する硬化剤を含むボンドを塗布する工程と、前記電子部品を保持した圧着ツールを昇降手段により昇降させて前記ボンドが塗布された基板に前記電子部品を搭載する工程と、この電子部品を押圧手段によって基板に押圧しながら加熱手段によって加熱することにより前記ボンドを硬化させる工程と、前記ボンドが硬化を開始する前に前記半田部を溶融させて前記電子部品を前記基板に半田付けする工程とを含み、前記電子部品を加熱する工程において前記半田部の温度が制御切換温度範囲に到達するまでは、前記押圧手段を制御することにより電子部品を基板に押圧する押圧荷重を制御し、制御切換温度範囲に到達した後は前記昇降手段を制御することにより電子部品の基板に対する高さ位置を制御することを特徴とする電子部品の実装方法。A method of mounting an electronic component in which a solder portion is formed on at least one of an electronic component and a substrate electrode, and the electronic component is bonded to the substrate via the solder portion. A step of applying a bond containing a curing agent having a melting point higher than the melting point of the solder on the solder portion formed in the step (a), and applying the bonding by raising and lowering a crimping tool holding the electronic component by lifting means. A step of mounting the electronic component on a substrate, a step of curing the bond by heating the electronic component against the substrate by a pressing unit while heating the electronic component, and a step of curing the solder portion before the bond starts curing. Melting the electronic component and soldering the electronic component to the substrate, wherein in the step of heating the electronic component, the temperature of the solder portion reaches a control switching temperature range. Until the pressing means controls the pressing load for pressing the electronic component against the substrate by controlling the pressing means, and after reaching the control switching temperature range, controls the elevating means to control the height position of the electronic component relative to the substrate. A method of mounting an electronic component, comprising: 前記半田部の温度が前記制御切換温度範囲に到達するのに必要な時間を実験値に基づいて設定しておき、前記電子部品を加熱する工程においてこの設定された時間に基づいて制御方式を切り換えることを特徴とする請求項１記載の電子部品の実装方法。The time required for the temperature of the solder part to reach the control switching temperature range is set based on an experimental value, and the control method is switched based on the set time in the step of heating the electronic component. The method for mounting an electronic component according to claim 1, wherein: 前記制御切換温度範囲が前記半田部の融点温度の６０％に設定される設定温度と半田融点温度の間であることを特徴とする請求項１記載の電子部品の実装方法。2. The electronic component mounting method according to claim 1, wherein the control switching temperature range is between a set temperature set to 60% of a melting point temperature of the solder portion and a solder melting point temperature. 前記制御切換温度範囲に到達したことを圧着ツールに設けられた温度計測手段によって検出することを特徴とする請求項１記載の電子部品の実装方法。2. The electronic component mounting method according to claim 1, wherein the control switching temperature range is detected by a temperature measuring means provided on the crimping tool. 前記制御切換温度範囲が前記半田部の融点温度であることを特徴とする請求項４記載の電子部品の実装方法。5. The electronic component mounting method according to claim 4, wherein the control switching temperature range is a melting point temperature of the solder portion.
JP01108998A 1998-01-23 1998-01-23 Electronic component mounting method Expired - Lifetime JP3539176B2 (en)

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JP5003590B2 (en) * 2008-05-16 2012-08-15 日本電気株式会社 Electronic component manufacturing apparatus and manufacturing method thereof
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