JPH1098075A - Semiconductor mounting method, semiconductor mounting device and semiconductor mounting structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To inject an insulation resin in a short time and improve the productivity. SOLUTION: In this semiconductor mounting method, where a semiconductor chip 11 is jointed with a wiring board 12 through face-down bonding, a semiconductor mounting part 14 to be mounted with the chip 11 is provided with an electrode pad 15, and the periphery of the part 14 is covered with a solder resist 16. A semiconductor chip 11 is mounted to the part 14 of the board 12 of such a structure, that it is electrically connected with the pad 15. Further, an insulation resin 17 is filled into a clearance between the chip 11 and board 12 from the periphery of the chip 11, and the resin 17 is cured through heating.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor mounting method for mounting a semiconductor chip on a wiring board, a semiconductor mounting apparatus, and a semiconductor mounting structure.

[0002]

2. Description of the Related Art In a semiconductor mounting method, flip chip mounting is performed by wire bonding or TAB (Tape Automat).
ed Bonding), the footprint occupied by the device can be reduced to the same size as the chip size, and it can be made as thin as possible.
It is drawing attention because it can be made smaller and lighter.

In the flip chip mounting method, a semiconductor chip is directly connected face-down to a circuit electrode of a wiring board via a protruding electrode. However, there is a problem that a thermal stress is generated in the connection part due to a difference in thermal expansion coefficient between the semiconductor chip and the wiring board, and the connection part is broken to lower reliability.

Therefore, by filling the gap between the semiconductor chip and the wiring board with a sealing resin having a low coefficient of thermal expansion by mixing an inorganic filler, a connection is made due to the difference in the coefficient of thermal expansion between the semiconductor chip and the wiring board. It has been practiced to reduce the thermal stress generated in the part.

Conventionally, a semiconductor mounting method for forming such a semiconductor mounting structure is to connect a semiconductor chip to a wiring board face-down, apply a sealing resin to the periphery of the semiconductor chip, and use a resin utilizing a capillary phenomenon. It was common to do this by injection.

FIG. 18 shows a conventional method of mounting a semiconductor chip having bump electrodes, 1 is a semiconductor chip, and 2 is a wiring board. A plurality of protruding electrodes 3 are provided on the lower surface of the semiconductor chip 1.
Are formed, and electrode pads 4 are formed on the wiring board 2 corresponding to the protruding electrodes 3. Reference numeral 6 denotes a solder resist. The material of the projecting electrode 3 is solder or gold.

[0008] As shown in FIG. 18 (a), the semiconductor chip 1 is face-down, the protruding electrodes 3 are positioned on the electrode pads 4 of the wiring board 2, and as shown in FIG. The semiconductor chip 1 is mounted, and the bumps 3 made of solder are melted by heating and connected to the electrode pads 4. On the other hand, in the case of a protruding electrode made of gold, it is connected to an electrode pad via a conductive paste. If a mounting failure of the semiconductor chip 1 is detected at this stage, the semiconductor chip 1 can be replaced (repaired) with a new semiconductor chip 1.

Next, as shown in FIG. 1C, when a sealing resin 5 such as a liquid epoxy resin is applied to the wiring substrate 2 around the semiconductor chip 1 by a dispensing method using a syringe 5a, Numerals 5 pass between the electrode pads 4 and fill the gap (for example, about 50 μm) between the semiconductor chip 1 and the wiring board 2 by capillary action.

The sealing resin 5 such as an epoxy resin used here has a thermal expansion coefficient (60 to 70 ppm / ° C.) of solder (27 ppm / ° C.) or gold (14 p.
pm / ° C), so that 40 to 7
By mixing about 0 wt% of an inorganic filler such as silica, the coefficient of thermal expansion in the operating temperature range is 20 to 4%.
It was reduced to about 0 ppm / ° C.

Next, when the sealing resin 5 is heated to about 120 to 160 ° C., the sealing between the semiconductor chip 1 and the wiring board 2 and the periphery of the semiconductor chip 1 is performed as shown in FIG. The resin 5 is cured.

[0011]

However, FIG.
In the mounting method shown in (1), the sealing resin 5 is injected into a small gap between the semiconductor chip 1 and the wiring board 2 by utilizing the capillary phenomenon, so that the viscosity of the sealing resin 5 needs to be reduced. Since the viscosity of the sealing resin 5 is increased by increasing the content of the inorganic filler, the injection property of the sealing resin 5 into the gap between the semiconductor chip 1 and the wiring board 2 is deteriorated.

For this reason, the shape and size of the inorganic filler are optimized, and the syringe 5a used when applying the wiring substrate 2 and the sealing resin 5 is heated at a temperature lower than the curing temperature, so that the sealing resin 5 Measures such as reducing the viscosity have been taken, but there is a limit to reducing the viscosity,
There was a problem that the resin injection time was long and the workability was poor.

When the protruding electrodes 3 arranged around the semiconductor chip 1 are formed at a pitch of 100 μm or less,
The gap between the adjacent protruding electrodes 3 is reduced to 30 μm or less,
Further, the gap between the semiconductor chip 1 and the wiring board 2 is 30 to 6
When the width is reduced to about 0 μm, there is a problem that the injectability of the sealing resin is considerably deteriorated, and a void V is generated at the center of the semiconductor chip 1 to cause a reduction in reliability.

Further, in the conventional semiconductor mounting method,
Before filling with the sealing resin, the connection strength is insufficient because only the protruding electrodes are connected, and the connection portion may be broken by an external force or thermal stress before the sealing resin filling step.

In particular, in connection at a fine pitch, the size of the protruding electrode becomes small, and it is broken by a small external force or thermal stress, so that this problem becomes serious. The present invention has been made in view of the above circumstances, and a first object is to provide a semiconductor mounting method capable of reducing a time required for a step of filling an insulating resin into a gap between a semiconductor chip and a wiring board.
A semiconductor mounting device and a semiconductor mounting structure are provided.

A second object is to provide a semiconductor mounting method, a semiconductor mounting apparatus, and a semiconductor mounting structure that can firmly mount a semiconductor chip on a wiring board and obtain electrical connection reliability.

[0017]

In order to achieve the above object, according to the present invention, there is provided a semiconductor mounting method for connecting a semiconductor chip on which a protruding electrode is formed face down to a wiring board. The semiconductor chip is mounted on the semiconductor chip mounting portion of the wiring board in which the periphery of the semiconductor chip mounting portion of the substrate where the semiconductor chip is mounted is covered with solder resist, and the semiconductor chip is electrically connected to the protruding electrodes and the electrode pads. Connecting, injecting an insulating resin into the gap between the semiconductor chip and the wiring board from around the mounted semiconductor chip, and heating and curing the injected insulating resin. It is characterized by the following.

According to a second aspect of the present invention, in a semiconductor mounting structure for connecting a semiconductor chip on which a protruding electrode is formed face down to a wiring board, the semiconductor chip has an electrode pad to which a protruding electrode of the semiconductor chip is connected, and A wiring board in which the periphery of a semiconductor chip mounting portion on which the semiconductor chip is mounted is covered with a solder resist; a semiconductor chip electrically connected to electrode pads of the wiring board via the protruding electrodes; An insulating resin filled in a gap between the chip and the wiring board is provided.

According to a third aspect of the present invention, in the first aspect, the semiconductor chip mounting portion has an area which is equal to or larger than a surface of the semiconductor chip mounted on the wiring board facing the wiring board. It is characterized by having substantially the same shape.

According to a fourth aspect, in the second aspect, the protruding electrode is made of a metal having a melting point higher than the curing temperature of the insulating resin. 6. The semiconductor mounting structure according to claim 5, wherein the semiconductor chip on which the protruding electrodes are formed is electrically connected face-down to the wiring board, wherein a thermoplastic resin and a thermosetting resin are provided between the semiconductor chip and the wiring board. Is interposed.

A sixth aspect of the present invention is characterized in that, in the fifth aspect, the thermoplastic resin and the thermosetting resin are interposed between the wiring substrate and the central region and the peripheral region of the semiconductor chip. And

A seventh aspect is the fifth aspect or the sixth aspect,
The thermoplastic resin and the thermosetting resin are characterized in that the resin used in the central region of the semiconductor chip is a thermoplastic resin, and the resin used in the peripheral region of the semiconductor chip is a thermosetting resin.

According to a eighth aspect of the present invention, in the semiconductor mounting method for connecting a semiconductor chip on which a protruding electrode is formed face down to a wiring board, a first resin is applied to at least one central region of the wiring board and the semiconductor chip. After supplying
The semiconductor chip is connected to the wiring board, and thereafter, a second resin is injected into a gap between the semiconductor chip and the wiring board from around the semiconductor chip.

A ninth aspect of the present invention is characterized in that, in the eighth aspect, the first resin uses a thermoplastic resin, and the second resin uses a thermosetting resin. 11. A substrate stage on which a wiring board on which a semiconductor chip having a protruding electrode is mounted is mounted, a transfer mechanism for transferring conductive paste or flux juxtaposed on the substrate stage to the protruding electrode, and the semiconductor chip And a bonding head for transferring the conductive paste or the flux to the protruding electrodes by the transfer mechanism, and then mounting and heating the wiring board on the wiring substrate. A measuring mechanism for measuring a relative height of the semiconductor chip with respect to the transfer mechanism is provided.

According to an eleventh aspect, in the tenth aspect, the measuring mechanism is a laser displacement meter installed below when the bonding head is between the substrate stage and the transfer mechanism.

According to a twelfth aspect, in the tenth aspect, the measuring mechanism contacts the semiconductor chip on the substrate stage having the reference height and drives the position of the bonding head or the motor for driving the bonding head based on the contact. It is characterized by being calculated from the control amount.

According to a thirteenth aspect, in a semiconductor mounting method for electrically connecting a semiconductor chip provided with a protruding electrode and a wiring board provided with an electrode pad via the protruding electrode and the electrode pad, a bonding tool is used. Holding the semiconductor chip and bringing the protruding electrode into contact with the electrode pad, heating a bonding tool to melt the protruding electrode, and bonding the semiconductor chip based on the melting of the protruding electrode. The method includes a step of releasing the semiconductor chip from the tool, and a step of holding and raising the semiconductor chip released from the bonding tool again by the bonding tool.

According to a fourteenth aspect of the present invention, in a semiconductor mounting method for electrically connecting a semiconductor chip provided with a protruding electrode and a wiring board provided with an electrode pad via the protruding electrode and the electrode pad, a bonding tool is used. Holding the semiconductor chip and bringing the protruding electrode into contact with the electrode pad, heating the bonding tool to melt the protruding electrode, and melting the protruding electrode based on the melting of the protruding electrode. Releasing from the bonding tool, holding the semiconductor chip released from the bonding head again by the bonding tool and raising the shape of the fused protruding electrode to a drum shape, and bumping the bonding tool. And a fifth step of cooling the substrate.

[0029]

Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 show a first embodiment, FIG. 1 is a vertical side view of a semiconductor mounting structure, and FIGS. 2 and 3 are process diagrams of a semiconductor mounting method.

First, the semiconductor mounting structure will be described. In the figure, reference numeral 11 denotes a semiconductor chip, and reference numeral 12 denotes a wiring board.
A plurality of protruding electrodes 13 are provided on the semiconductor chip 11,
An electrode pad 15 is provided on the semiconductor chip mounting portion 14 of the wiring board 12 so as to correspond to the protruding electrode 13.
This protruding electrode 13 is made of solder.

Further, the semiconductor chip mounting portion 14 of the wiring board 12 has an area of approximately the same size, which is slightly larger than the area of the mounting surface of the semiconductor chip 11, and the solder resist 16 is removed, and the electrode pads 15 are exposed. Accordingly, the periphery of the semiconductor chip mounting portion 14 is surrounded by the solder resist 16, and the semiconductor chip mounting portion 14 is formed in a recess lower than the upper surface of the solder resist 16.

The semiconductor chip 11 is mounted face-down on the semiconductor chip mounting portion 14 by a dedicated flip chip mounting device, and the protruding electrodes 13 are electrically connected to the electrode pads 15 of the wiring board 12. Further, the gap (about 30 to 100 μm) between the semiconductor chip 11 and the wiring board 12 is filled with an insulating resin 17 made of a thermosetting resin whose curing point such as epoxy resin is lower than the melting point of the protruding electrode 13. .

Next, a semiconductor mounting method will be described with reference to FIGS. As shown in FIGS. 2A and 3A, the semiconductor chip 11 is face-down, and the protruding electrode 13 is positioned on the electrode pad 15 of the wiring board 12, and FIG. 2B and FIG. As shown in (1), the semiconductor chip 11 is mounted on the wiring substrate 12, and the protruding electrodes 13 are melted by heating and connected to the electrode pads 15. If a mounting failure of the semiconductor chip 11 is detected at this stage, the semiconductor chip 11 can be replaced (repaired) with a new semiconductor chip 11.

Next, when a liquid insulating resin 17 is applied to the wiring substrate 12 around the semiconductor chip 11 by a dispensing method using a syringe 18, the insulating resin 5 is connected between the semiconductor chip 11 and the wiring substrate 12 by a capillary phenomenon. The gap is filled.

Next, as shown in FIG. 2C and FIG. 3C, in order to obtain the characteristics of the insulating resin 17 having a low coefficient of thermal expansion and excellent moisture resistance, heat resistance and mechanical properties, When the insulating resin 17 is heated at about 120 to 160 ° C. for several hours,
The insulating resin 17 between the semiconductor chip 11 and the wiring board 12 and around the semiconductor chip 11 is cured.

The material of the protruding electrode 13 is solder in the above embodiment, but may be gold, copper, or another metal. However, when the material of the protruding electrode 13 is gold or copper, it is difficult to melt itself, so that the bump 13 is joined by a conductive paste, a soluble metal, a conductive adhesive or the like. Also,
The wiring board 12 may be a commonly used one such as a glass epoxy board. The viscosity of the insulating resin 17 is about 0.1 to 50 Pa · s, and as the gap increases, the speed at which the insulating resin 17 penetrates by capillary action increases, and the filling time decreases.

Therefore, when the semiconductor chip 11 is connected to the wiring board 12, the solder resist is applied to the portion where the semiconductor chip 11 is mounted (semiconductor chip mounting portion 14) so that the gap between the semiconductor chip 11 and the wiring board 12 becomes large. By using the wiring board 12 to which the coating 16 is not applied, the insulating resin 17 easily enters the gap, and the injection property of the insulating resin 17 is improved. Moreover, since the semiconductor chip mounting portion 14 is formed in a recess lower than the upper surface of the surrounding solder resist 16, the insulating resin 17 does not flow out of the periphery of the wiring board 12 when the insulating resin 17 is injected. Work can be facilitated.

According to the present embodiment, in the semiconductor mounting structure in which the semiconductor chip 11 is connected face down to the wiring board 12, the wiring board 12 in which the solder resist 16 is not applied to the area where the semiconductor chip 11 is mounted is used. By increasing the gap between the semiconductor chip 11 and the wiring board 12 and filling the gap with the insulating resin 17, the insulating resin 17 easily penetrates into the gap due to the capillary phenomenon, and the resin injecting property is increased. Can be improved.

FIG. 4 shows the second embodiment. The same components as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted. This embodiment uses the wiring board 12 from which the solder resist 16 has been removed to the outside of the outline of the semiconductor chip 11.
When 7 is applied, the solder resist 16 serves as a dam, and it is possible to control a region where the insulating resin 17 protrudes around the semiconductor chip 11. Therefore,
With such a structure, the insulating resin 17, which has an adverse effect when it comes into contact with the electronic component, is unlikely to come into contact with another electronic component adjacent to the solder resist 16 over the dam, and an electronic component adjacent to the semiconductor chip 11. There is an effect that the interval between the components can be set small.

FIGS. 5 and 6 show a third embodiment.
FIG. 5 is a process diagram of the semiconductor mounting method, and FIG. 6 is a vertical sectional side view of the semiconductor mounting structure. The same components as those in the first and second embodiments are denoted by the same reference numerals, and description thereof is omitted.

First, a semiconductor mounting method will be described with reference to FIG. 5. First, a first portion made of a thermoplastic resin having fluidity is provided at one position in a central region on the mounting surface of the semiconductor chip 11.
Is supplied by a dispenser method or the like.
Next, the semiconductor chip 11 is face down and the protruding electrode 1 is
3 is positioned and mounted on the electrode pad 15 of the wiring board 12. In this state, the semiconductor chip 11 is heated to electrically connect the protruding electrodes 13 to the electrode pads 15, and the first sealing resin 20 is cured by heating.

Next, a second sealing resin 21 made of a thermosetting resin is injected onto the wiring substrate 12 around the semiconductor chip 11 by a dispense method. The gap (about 50 μm) between the wiring board 11 and the wiring board 12 is filled.

Thereafter, the semiconductor chip 11 is heated to
When the sealing resin 21 is cured, as shown in FIG. 6, the wiring is performed in a state where the first sealing resin 20 and the second sealing resin 21 are sandwiched in the gap between the semiconductor chip 11 and the wiring board 12. The semiconductor chip 11 is mounted on the substrate 12.

In the present embodiment, the first sealing resin 20 made of a thermoplastic resin is supplied to one portion in the central region on the mounting surface of the semiconductor chip 11, but as shown in FIG. The sealing resin 20 may be supplied to regions near the four corners of the semiconductor chip 11 (four locations at the same distance from the center (center of gravity) of the semiconductor chip 11).

As shown in FIG. 8, the first sealing resin 20 is formed in the center (center of gravity) region
A total of five locations may be supplied to the vicinity of the corner (four locations at the same distance from the center (center of gravity) of the semiconductor chip).

With such a configuration, the semiconductor chip 11 can be more firmly mounted on the wiring board 12. FIG. 9 shows a fourth embodiment, and FIG. 9 is a process diagram of a semiconductor mounting method. The same components as those in the first to third embodiments are denoted by the same reference numerals and description thereof is omitted.

Semiconductor chip mounting portion 14 of wiring board 12
A first sealing resin 20 made of a thermoplastic resin is supplied to a central portion of the substrate by a dispenser method or the like. Next, the semiconductor chip 11 is face-down and the protruding electrodes 13 are connected to the wiring board 12.
Is positioned and mounted on the electrode pad 15. In this state, the semiconductor chip 11 is heated to electrically connect the protruding electrodes 13 to the electrode pads 15 and to form the first sealing resin 2.
0 is cured by heating.

Next, a second sealing resin 21 made of a thermosetting resin is injected into the wiring substrate 12 around the semiconductor chip 11 by a dispense method. The gap (about 50 μm) between the wiring board 11 and the wiring board 12 is filled.

Thereafter, the semiconductor chip 11 is heated to
When the sealing resin 21 is cured, as shown in FIG. 6, the wiring is performed in a state where the first sealing resin 20 and the second sealing resin 21 are sandwiched in the gap between the semiconductor chip 11 and the wiring board 12. The semiconductor chip 11 is mounted on the substrate 12, and the same mounting structure as in the third embodiment is obtained.

In the present embodiment, the first sealing resin 20 made of a thermoplastic resin is supplied to one portion of the central region of the semiconductor chip mounting portion 14 of the wiring board 12.
The first sealing resin 20 may be supplied to regions near the four corners of the semiconductor chip mounting portion 14 (four locations at the same distance from the center (center of gravity) of the semiconductor chip 11).

The first sealing resin 20 is applied to the center (center of gravity) area and the four corner vicinity areas (four points at the same distance from the center (center of gravity) of the semiconductor chip) in the semiconductor chip mounting portion 14 of the wiring board 12. You may supply to five places in total.

With this configuration, the semiconductor chip 11 can be more firmly mounted on the wiring board 12. FIG. 10 shows a fifth embodiment, and FIG. 10 is a process diagram of a semiconductor mounting method. The same components as those in the first to fourth embodiments are denoted by the same reference numerals and description thereof is omitted.

This embodiment is a mounting method in which the first sealing resin 20 is supplied to corresponding positions on both the mounting surface of the semiconductor chip 11 and the semiconductor chip mounting portion 14 of the wiring board 12.

FIG. 11 shows a sixth embodiment, and FIG. 11 is a process diagram of a semiconductor mounting method. The same components as those in the first to fifth embodiments are denoted by the same reference numerals and description thereof is omitted. .
In the present embodiment, the first sealing resin 20 is
This is a mounting method in which the mounting surface is supplied to a position other than the positions opposite to both the mounting surface and the semiconductor chip mounting portion 14 of the wiring board 12.

According to the third to sixth embodiments, when connecting the semiconductor chip 11 and the wiring board 12 via the protruding electrodes 13, the first sealing resin 20 supplied first is cured. Therefore, not only the connection strength of the protruding electrode 13 but also the adhesion of the cured first sealing resin 20 is supplemented, and the entire connection of the flip chip mounting portion is strengthened. Therefore, even before the second sealing resin 21 is injected into the gap between the semiconductor chip 11 and the wiring board 12 from the periphery of the semiconductor chip 11, sufficient connection strength can be obtained, and there is no fear of breakage.

In the semiconductor mounting method, the projection electrode 13
After conducting an electrical test after connection through the semiconductor chip 11, if a defect is found in the semiconductor chip 11,
Repair work is performed, but since a thermoplastic resin is used as the first sealing resin 20, the repair work can be easily performed by reheating to soften the first sealing resin 20. it can.

According to the third to sixth embodiments, the first sealing resin 20 has been described as a thermoplastic resin and the second sealing resin 21 has been described as a thermosetting resin. Both the sealing resin 20 and the second sealing resin 21 may be of any type and type.

Further, even when a thermosetting resin is used as the first sealing resin 20, the repair work can be easily performed by selecting a resin which is not completely cured under the connection conditions of the bump electrodes 13. Furthermore, even if a resin that cures completely is used, the supply area of the first sealing resin 20 is limited to the area near the center or four corners of the semiconductor chip 11 (semiconductor chip 1).
It is a small area such as four locations at the same distance from the center (center of gravity) of one (1), and repair work can be performed. The semiconductor chip 11 may use a package such as a BGA (Ball Grid Array) or a CSP (Chip Size Package).

FIGS. 12 and 13 show a seventh embodiment. FIG. 12 shows a semiconductor chip 11 shown in FIG.
FIG. 13 is a perspective view of a flip chip mounting apparatus for automatically mounting on a flip chip 2, and FIG. 13 is a side view of a measuring mechanism. Reference numeral 22 denotes a first XYθ table that can be positioned in the XYθ axis direction. A bonding stage 23 and a semiconductor chip recognition camera 24 are provided above the first XYθ table 22.
Is provided. Then, the bonding stage 23
The wiring board 12 is mounted with the electrode pads 14 facing upward, and the semiconductor chip recognition camera 24 is installed with the optical axis facing vertically upward.

The XY table is located next to the first XYθ table 22.
A second XYθ table 25 that can be positioned in the θ-axis direction is provided, and a tray 26 is provided above the second XYθ table 25. A large number of semiconductor chips 11 are mounted on the tray 26 in an aligned state with the protruding electrodes 13 facing upward. The protruding electrode 13 is made of a metal such as gold or copper, which is difficult to melt itself. Therefore, it is necessary to connect the protruding electrode 13 to the electrode pad 14 of the wiring board 12 through a conductive paste 40 described later.

Further, a bonding mechanism 27 is provided above the first XYθ table 22, and a second XYθ table is provided.
Above the .theta. table 25, the semiconductor chip 11 on the tray 26 is picked up and turned upside down.
1 and the bonding mechanism 27 with the protruding electrode 13 facing downward.
Is provided.

The bonding mechanism 27 is provided with an X-axis stage 28, on which a bonding head 29 is mounted so as to be movable in the X-axis direction. The bonding head 29 is vertically movable by a vertical movement mechanism 30, and a bonding tool 31 is provided at a lower end thereof. This bonding tool 3
1 has a means for vacuum-sucking the semiconductor chip 11 face down and a heating means for melting the solder.

Further, a board recognition camera 32 is installed on the X-axis stage 28 adjacent to the bonding head 29 with the optical axis directed vertically downward. The position of the wiring board 12 on the bonding stage 23 can be recognized.

The semiconductor chip supply mechanism 28 is provided with an X-axis guide rail 33, and the X-axis guide rail 33 is provided with a chip reversing unit 34 movably in the X-axis direction. The chip reversing unit 34 has a function of adsorbing the semiconductor chip 11 on the tray 26 and reversing the same. On the tray 26, the protruding electrode 13 of the semiconductor chip 11 is directed upward. The bonding tool 31 can be sucked and held downward.

Further, a tray recognition camera 35 facing the tray 26 is installed on the X-axis guide rail 33 with the optical axis directed vertically downward, and recognizes the pattern of the semiconductor chip 11 on the tray 26, and By controlling the XYθ table 25, the semiconductor chips 11 on the tray 26 are controlled.
Is positioned at the pickup position.

The semiconductor chip recognition camera 24 and the board recognition camera 32 are connected to an image matching device 36. Here, the relative positional relationship between the semiconductor chip recognition camera 24 and the board recognition camera 33 is accurately obtained in advance. The image matching device 36 is configured to combine and display an image obtained by the semiconductor chip recognition camera 24 and an image obtained by the board recognition camera 32.

Further, this composite image is displayed on the semiconductor chip 1.
It is inputted to a positioning correction amount calculating means 37 for calculating a relative positioning correction amount between the circuit board 1 and the wiring board 12, and the positioning correction amount calculating means 37 forms a part of a bonding control device 38. The bonding control device 38 is provided to control the positioning of the first XYθ table 22 based on the calculated positioning correction amount. Further, the bonding device 38 includes a first XYθ table 22, a second XYθ table 25, a semiconductor chip supply mechanism 28, an X-axis stage 29, and a tray recognition camera 3.
5 and is set to be performed according to a program stored in advance.

Further, a paste container 39 as a transfer mechanism is installed adjacent to the bonding stage 23 (see FIG. 13), and a conductive paste 40 is accommodated in the paste container 39 (see FIG. 12). Does not show the paste container 39). As shown in FIG. 13, a laser displacement meter 41 as a measuring mechanism for measuring the height of the semiconductor chip 11 is provided between the bonding stage 23 and the paste container 39 (in FIG. 12, a laser displacement meter is provided). The displacement meter 41 is not shown).

The laser displacement meter 41 measures the height of the semiconductor chip 11 and inputs the measured value to the bonding control device 38. The bonding control device 38 drives and controls the vertical movement mechanism 30 of the bonding head 29. It has become.

That is, the height of the semiconductor chip 11 is measured by the laser displacement meter 41, and the amount of movement of the bonding head 29 during bonding or transfer is calculated from the measured value.
A motor for driving the bonding head 29 is relatively moved. Therefore, even if the bonding tool 31 expands due to the heat for heating the semiconductor chip 11 and the height of the semiconductor chip 11 attracted to the bonding tool 31 changes, the height of the bonding head 29 is adjusted by the vertical movement mechanism 30. By doing so, it can always be set to a constant height.

Further, a resin injection mechanism 91 for discharging the insulating resin 17 shown in FIG. 2 in a timely manner is provided adjacent to the bonding stage 23. This resin injection mechanism 91
Is a syringe 1 containing a paste-like insulating resin 17.
8, a needle 18a for discharging an insulating resin 17 coaxially connected to the tip of the syringe 18, and a syringe 18
To hold and position, for example, X
And a positioning mechanism (not shown) movable in the YZθ directions. The resin injection mechanism 91 is electrically connected to the bonding control device 38 and performs a resin injection operation according to a program set in the bonding control device 38 in advance.

That is, when face-down (flip chip) bonding of the semiconductor chip 11 to the wiring board 12 is completed by the bonding tool 31, the bonding control device 38 injects the insulating resin 17 into the resin injection mechanism 91, and returns to FIG. As shown in the figure, a control signal for injecting the semiconductor chip 11 into the gap between the semiconductor chip mounting portion 14 and the semiconductor chip 11 is formed. As a result, the positioning mechanism operates to position the syringe 18 so that the needle 18a comes to the injection position shown in FIG. Thus, by pressurizing the inside of the syringe 18, the needle 1
When the insulating resin 17 is discharged from 8b, the insulating resin 17 penetrates into the gap between the semiconductor chip mounting portion 14 and the semiconductor chip 11 by capillary action, and fills the gap as shown in FIG. When a series of these operations is completed, the syringe 18 returns to the initial position. As described above, according to this flip chip mounting apparatus, the application work of the insulating resin 17 can be performed with high efficiency and high accuracy.

In the present embodiment, the height of the semiconductor chip 11 sucked by the bonding tool 31 is measured by the laser displacement meter 41, and the height of the bonding head 29 is adjusted by the vertical movement mechanism 38. Lowers the bonding head 29 at an extremely low speed, and moves the bump electrode 13 of the semiconductor chip 11 to a reference height (known height).
Alternatively, a method of lightly contacting the bonding stage 23 having the above and calculating from the control amount of the motor that drives the bonding head 29 at that time may be used. It is easy to determine that the protruding electrode 13 has come into contact with the bonding stage 23 by using a load sensor. In this case, paste container 3
By using 9 as a bonding stage, the effects described later can be obtained.

Since the height of the semiconductor chip 11 can be accurately measured, the projecting electrode 13 of the semiconductor chip 11 is moved at a high speed until immediately before it comes into contact with the wiring board 12 on the bonding stage 23 or the paste container 39 in which the paste 40 is extended. , And then can be brought down and contacted at a very low speed. Thereby, the impact force can be suppressed, and the damage of the semiconductor chip 11 can be prevented.

Further, since the amount of protrusion of the protruding electrode 13 into the conductive paste 40 can be accurately reproduced, the transfer amount is stable, good transfer and good bonding can be realized, and the yield can be improved.

The method of pressing the protruding electrode 13 on the bonding stage 23 has a long tact time.
When the paste container 39 is also used as the bonding stage 23, there is no effect at the time of transfer, but the effect appears at the time of bonding. In particular, it is more effective to measure the height of the semiconductor chip 11 immediately before the bonding or transfer operation because the height can be measured more accurately.

When the semiconductor chip 11 has a strong impact force, the tact time can be shortened by increasing the descending speed in the method of pressing the semiconductor chip 11 on the bonding stage 23.

Further, since the present embodiment can cope with a variation in the thickness of the semiconductor chip 11, it is effective even when heating is not performed by the bonding tool 31.
In the laser displacement meter 41, the height of the surface of the bump electrode 13 may be measured instead of the height of the semiconductor chip 11. Rather, this is preferable because accurate control can be performed, but on the other hand, measuring the height of the surface of the protruding electrode 13 is a measurement of the protruding electrode 13 smaller than the semiconductor chip 11, and has a disadvantage that the measurement requires a long time.

When the above-mentioned conductive paste is used, the case where the projecting electrode 13 is made of gold or copper is used. However, when the projecting electrode 13 is made of solder, it is not necessary to transfer the conductive paste. Instead, since it is necessary to attach the flux, by accommodating the flux in the paste container 39, the same effect as the conductive paste described above can be obtained.

FIGS. 14 and 15 show the eighth embodiment. The same components as those of the seventh embodiment are denoted by the same reference numerals and description thereof is omitted. FIG. 14 shows a part of the flip chip mounting apparatus shown in FIG. 12, and FIG. 15 shows timings showing the height and temperature of the bonding tool, the state of suction of the semiconductor chip, and the state of melting and solidification of the bump electrodes made of solder. It is a chart.

First, the semiconductor chip 11 is sucked and held by the bonding tool 31 of the semiconductor mounting apparatus shown in FIG.
The semiconductor chip 11 and the wiring board 12 are recognized by the board recognition camera 32 and the semiconductor recognition camera 24, respectively. Next, the projecting electrodes 13 of the semiconductor chip 11 are aligned and the bonding tool 31 is lowered to lower the wiring board 12.
In contact with the electrode pad 14. The lowering amount of the bonding tool 31 at this time is obtained in advance by the method described with reference to FIG.

Thereafter, the bonding tool 31 is heated to melt the protruding electrodes 13. When the semiconductor chip 11 by the bonding tool 31 is released while the protruding electrode 13 is being melted, and the semiconductor chip 11 is released from the bonding tool 31 and the bonding tool 31 is raised, self-alignment acts on the protruding electrode 13 and the semiconductor is Precise positioning of the chip 11 becomes possible.

The judgment that the protruding electrode 13 has melted is made based on the fact that the value of the load sensor of the bonding head 29 decreases. Alternatively, the determination may be made based on the time from the start of heating.

In the present embodiment, in order to release the semiconductor chip 11 from the bonding tool 31 in the molten state of the bump electrode 13, self-alignment of the bump electrode 13 works, and the precision is not dependent on the positioning accuracy of mounting. Positioning becomes possible.

FIG. 16 shows the ninth embodiment. The same components as those of the seventh and eighth embodiments are designated by the same reference numerals and the description thereof will be omitted. FIG. 16 shows the height of the bonding tool,
Temperature, state of semiconductor chip adsorption,
It is a timing chart showing the solidification state.

First, the semiconductor chip 11 is sucked and held by the bonding tool 31 of the semiconductor mounting apparatus, and the semiconductor chip 11 and the wiring board 12 are recognized by the board recognition camera 32 and the semiconductor recognition camera 24, respectively. Next, the protruding electrodes 13 of the semiconductor chip 11 are aligned and brought into contact with the electrode pads 14 of the wiring board 12.

After that, the bonding tool 31 is heated to melt the protruding electrodes 13. When the semiconductor chip 11 by the bonding tool 31 is released while the protruding electrode 13 is being melted, and the semiconductor chip 11 is released from the bonding tool 31 and the bonding tool 31 is raised, self-alignment acts on the protruding electrode 13 and the mounting is performed. The precise alignment of the semiconductor chip 11 can be performed without depending on the alignment accuracy of the semiconductor chip 11.

After that, the bonding tool 31 is lowered to the height of the semiconductor chip 11, and
1, the bonding tool 31 is cooled, and the protruding electrode 13 is hardened.

Note that the second suction by the bonding tool 31 may not be performed. However, the efficiency of heat transfer from the bonding tool 31 to the semiconductor chip 11 is better when suction is performed.

FIG. 17 shows the tenth embodiment.
The same components as those in the ninth embodiment are denoted by the same reference numerals, and description thereof is omitted. FIG. 17 is a timing chart showing the height and temperature of the bonding tool, the state of suction of the semiconductor chip, and the state of melting and solidification of the protruding electrodes.

First, the semiconductor chip 11 is sucked and held by the bonding tool 31 of the semiconductor mounting apparatus, and the semiconductor chip 11 and the wiring board 12 are recognized by the board recognition camera 22 and the semiconductor recognition camera 24, respectively. Next, the protruding electrodes 13 of the semiconductor chip 11 are aligned and brought into contact with the electrode pads 14 of the wiring board 12.

After that, the bonding tool 31 is heated to melt the protruding electrodes 13. When the semiconductor chip 11 by the bonding tool 31 is released while the protruding electrode 13 is being melted, and the semiconductor chip 11 is released from the bonding tool 31 and the bonding tool 31 is raised, self-alignment acts on the protruding electrode 13 and the mounting is performed. The precise alignment of the semiconductor chip 11 can be performed without depending on the alignment accuracy of the semiconductor chip 11.

After that, the bonding tool 31 is lowered to the height of the semiconductor chip 11, and
1 is held by suction, and in a state where the protruding electrode 13 is melted, the height of the semiconductor chip 11 is adjusted by using a bonding tool 31 so that the shape of the protruding electrode 13 is shaped like a drum.
The bonding tool 31 is cooled to harden the protruding electrode 13.

In the present embodiment, the suction of the semiconductor chip 11 is released in a state in which the protruding electrodes 13 are melted, and then the suction is performed again to adjust the height of the semiconductor chip 11. Semiconductor chip 1
It is possible to control the shape of the protruding electrode 13 in the shape of a drum together with the precise positioning of (1), and it is possible to mount the semiconductor in a precise positioning state and with high connection reliability.

Further, here, the conventional paste transfer method will be described. FIG. 19 shows a conventional substrate stage 51,
It comprises a bonding head 52 and a transfer mechanism 53 for conductive paste. Bonding head 52
Is movable in the Z direction and the X direction, and a bonding tool 52a is provided below the bonding head 52. Then, the semiconductor chip 1 can be suction-held on the lower surface of the bonding tool 52a in a face-down state. Also, the substrate stage 51
A paste container 56 as a transfer mechanism 53 is installed on the side next to the conductive paste 57.
Is housed.

FIG. 20 shows a part of a flip chip mounting apparatus capable of measuring the height of the bonding head 52. The bonding head 52 is provided with a target plate 54 projecting sideways. Is provided with a laser displacement meter 55 for measuring the height of the bonding head 52. A paste container 56 as a transfer mechanism 53 is provided adjacent to the substrate stage 51. The paste container 56 contains a conductive paste 57.

Then, after moving the bonding head 52 in the X direction to position the semiconductor chip 1 above the paste container 56, the bonding head 52 is moved in the Z direction, that is, lowered, to the tip of the protruding electrode 3a of the semiconductor chip 1. The conductive paste 57 can be transferred. in this case,
The material of the protruding electrode 3a is gold (A) having a melting point higher than that of solder.
u) It is made of copper (Cu).

In the paste transfer method, as shown in FIG.
0-30 μm), and a method in which the protruding electrode 3 of the semiconductor chip 1 is pressed against the portion to apply pressure, and as shown in FIG.
Of the protruding electrode 3a by a predetermined amount in the conductive paste 57.

On the other hand, in a semiconductor mounting method using a protruding electrode made of solder, a semiconductor chip having a protruding electrode is mounted on an electrode pad of a wiring board and then passed through a reflow furnace to obtain another semiconductor device or another semiconductor device. There is a method of soldering together with the electronic components at once, or a method of soldering semiconductor chips one by one by heating the bonding tool by pulse heating using a dedicated mounting device.

In the mounting method using the bonding tool, a timing chart shown in FIG. 23 (the height of the bonding tool of the mounting apparatus for realizing the flip chip mounting method, the temperature, the suction state of the semiconductor chip, and the protrusion electrodes) As shown in the figure, the semiconductor chip is sucked and held by a bonding tool, the semiconductor chip and the wiring board are recognized, and then the protruding electrodes of the semiconductor chip are aligned and placed on the electrode pads of the wiring board. Then, the bonding tool is heated to melt the protruding electrodes. Thereafter, the bonding tool is cooled, and after the protruding electrodes solidify, the semiconductor chip is generally released from the bonding tool and the bonding tool is raised.

However, the bonding method shown in FIG. 23 has a problem in thermal fatigue strength of the protruding electrode, and has a serious drawback that cracks easily occur during use. Therefore, as shown in the timing chart of FIG. 24 (showing the height and temperature of the bonding tool in the flip chip mounting method, the state of adsorption of the semiconductor device, and the state of melting and solidification of the protruding electrodes), the semiconductor chip is mounted by the bonding tool. Holds by suction, recognizes semiconductor chips and wiring boards,
Then, the protruding electrodes of the semiconductor chip are aligned and brought into contact with the electrode pads of the wiring board, and then the bonding tool is heated to melt the protruding electrodes. The height of the semiconductor chip is adjusted to make the shape of the protruding electrode in the shape of a drum in a state in which the protruding electrode is melted (see FIG. 24, arrow HB). Then, the bonding tool is cooled, and after the protruding electrode solidifies. A method of releasing a semiconductor chip from a bonding tool and raising the bonding tool has been developed.
According to this method, since the shape becomes a drum shape, the fatigue strength is increased, so that the occurrence of cracks can be prevented.

As a result, the method of mounting the semiconductor chip 1 on the wiring board 2 shown in FIGS. 19 to 21 is performed by heating the bonding tool 52a of the bonding head 52. For this reason, after mounting is performed once, the bonding head 52 and the bonding tool 52a have been heated and have not cooled to the initial temperature. At this time, since the bonding head 52 and the bonding tool 52a thermally expand, the height of the semiconductor chip 1 cannot be grasped after the second time, and the height is lower than the first time. In the case of the method shown in FIG. When a large impact force is applied to the bump electrode 3 of the semiconductor chip 1 during bonding and transfer, the semiconductor chip 1 may be damaged.

In the case of the method shown in FIG. 22, during the transfer, the amount of sinking of the protruding electrode 3 into the conductive paste 57 becomes too large for the same reason as in FIGS. Furthermore, a short circuit between the protruding electrodes 3 and 3 due to the paste 57 occurs.

However, such a technical problem is as follows.
The problem can be solved by detecting the relative height of the semiconductor chip held by the bonding head with respect to the transfer mechanism as in the seventh embodiment.

On the other hand, in the mounting method of FIG.
Unlike the mounting method of No. 3, the connection reliability is improved because the height of the protruding electrode can be adjusted to be high, but the self-alignment effect of the protruding electrode does not work. Therefore, the mounting accuracy of the semiconductor chip largely depends on the positioning accuracy of the mounting device. The misalignment not only causes an initial connection failure but also deteriorates connection reliability. If high-accuracy alignment is performed, generally, not only is the device expensive, but also the problem is that the alignment time is lengthened.

Further, when the semiconductor chip is repaired, there are many restrictions for re-melting the solder of other parts. For example, in the case of a double-sided mounting board, it is necessary to take measures to prevent the components on the rear surface from falling. These problems become more serious as the connection pitch becomes finer.

[0107] However, such a technical problem is as follows.
The problem can be solved by improving the timing of bonding as in the eighth to tenth embodiments. In the eighth to tenth embodiments, the height of the bonding tool 31 is temporarily increased slightly, but need not be increased. However, when the bonding tool 31 is not raised, the semiconductor chip 13 moves so as to slide on the surface of the bonding tool 31 when the self-alignment of the solder bumps 13 acts. As compared with the case, the accuracy of the alignment may be slightly lower.

[0108]

According to the first to ninth aspects of the present invention, the gap between the semiconductor chip and the wiring board can be increased.
Insulating resin can be injected in a short time, and productivity can be improved. Further, the injected insulating resin does not flow around the wiring board, and the insulating resin can be easily injected into the target portion.

According to the tenth to twelfth aspects, the relative height of the semiconductor chip held by the bonding head with respect to the transfer mechanism can be accurately measured, and the semiconductor mounting can be performed accurately and reliably. According to the thirteenth and fourteenth aspects, by melting the protruding electrodes of the semiconductor chip to form a drum shape, the mounting strength of the semiconductor chip is high and the reliability can be improved.

[Brief description of the drawings]

FIG. 1 is a vertical sectional side view showing a mounting structure of a semiconductor chip according to a first embodiment of the present invention.

FIG. 2 is an exemplary perspective view showing a mounting step of the semiconductor chip of the embodiment;

FIG. 3 is a vertical side view showing a mounting step of the semiconductor chip of the embodiment.

FIG. 4 is an exemplary perspective view showing a step of mounting a semiconductor chip according to a second embodiment of the present invention;

FIG. 5 is a vertical sectional side view showing a mounting step of a semiconductor chip according to a third embodiment of the present invention.

FIG. 6 is a plan view and a longitudinal side view showing a mounting structure of the semiconductor chip of the embodiment.

FIG. 7 is a plan view and a vertical sectional side view showing a modification of the mounting structure of the semiconductor chip of the embodiment.

FIG. 8 is a plan view and a vertical sectional side view showing a modification of the semiconductor chip mounting structure of the embodiment.

FIG. 9 is a vertical sectional side view showing a mounting step of a semiconductor chip according to a fourth embodiment of the present invention.

FIG. 10 is a vertical sectional side view showing a mounting step of a semiconductor chip according to a fifth embodiment of the present invention.

FIG. 11 is a vertical sectional side view showing a mounting step of a semiconductor chip according to a sixth embodiment of the present invention.

FIG. 12 is a perspective view of a semiconductor mounting device according to a seventh embodiment of the present invention.

FIG. 13 is a side view showing the operation of the semiconductor mounting device of the embodiment.

FIG. 14 is a front view of a part of a semiconductor mounting device according to an eighth embodiment of the present invention;

FIG. 15 is a timing chart showing the operation of the semiconductor mounting apparatus of the embodiment.

FIG. 16 is a timing chart showing the operation of the semiconductor mounting device according to the ninth embodiment of the present invention;

FIG. 17 is a timing chart showing the operation of the semiconductor mounting device according to the tenth embodiment of the present invention;

FIG. 18 is a vertical sectional side view showing a conventional semiconductor chip mounting process.

FIG. 19 is a front view showing a part of a conventional semiconductor mounting apparatus.

FIG. 20 is a front view showing a part of a conventional semiconductor mounting apparatus.

FIG. 21 is a vertical sectional side view showing a transfer step in a conventional semiconductor mounting apparatus.

FIG. 22 is a vertical sectional side view showing a transfer step in a conventional semiconductor mounting apparatus.

FIG. 23 is a timing chart showing the operation of a conventional semiconductor mounting device.

FIG. 24 is a timing chart showing the operation of a conventional semiconductor mounting device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 ... Semiconductor chip 12 ... Wiring board 13 ... Protruding electrode 14 ... Semiconductor chip mounting site 15 ... Electrode pad 17 ... Insulating resin

Claims (14)

[Claims] 1. A semiconductor mounting method for connecting a semiconductor chip on which projecting electrodes are formed to a wiring board face-down, wherein a periphery of a semiconductor chip mounting portion of the wiring board on which the semiconductor chip is mounted is covered with a solder resist. Mounting the semiconductor chip on the semiconductor chip mounting portion of the wiring board and electrically connecting the protruding electrode and the electrode pad; and mounting the semiconductor chip and the wiring board from around the mounted semiconductor chip. A step of injecting an insulating resin into a gap between the semiconductor device and a step of heating and curing the injected insulating resin. 2. A semiconductor mounting structure for connecting a semiconductor chip on which a protruding electrode is formed to a wiring board face-down, comprising: an electrode pad to which a protruding electrode of the semiconductor chip is connected, wherein the semiconductor includes the electrode pad. A wiring board in which the periphery of a semiconductor chip mounting portion on which the chip is mounted is covered with a solder resist, a semiconductor chip electrically connected to electrode pads of the wiring board via the protruding electrodes, A semiconductor mounting structure, comprising: an insulating resin filled in a gap with a wiring board. 3. The semiconductor chip mounting portion has an area which is equal to or larger than a surface of the semiconductor chip mounted on the wiring board facing the wiring board, and has substantially the same shape as the semiconductor chip. 3. The semiconductor mounting structure according to claim 2, wherein 4. The semiconductor mounting structure according to claim 2, wherein the protruding electrode is made of a metal having a melting point higher than a curing temperature of the insulating resin. 5. In a semiconductor mounting structure in which a semiconductor chip on which a protruding electrode is formed is electrically connected face down to a wiring board, a thermoplastic resin and a thermosetting resin are provided between the semiconductor chip and the wiring board. A semiconductor mounting structure, wherein a semiconductor device is interposed. 6. The semiconductor according to claim 5, wherein the thermoplastic resin and the thermosetting resin are interposed between the wiring substrate and the central region and the peripheral region of the semiconductor chip. Mounting structure. 7. The thermoplastic resin and the thermosetting resin include a resin used for a central region of a semiconductor chip as a thermoplastic resin.
7. The semiconductor mounting structure according to claim 5, wherein a resin used for a peripheral region of the semiconductor chip is a thermosetting resin. 8. A semiconductor mounting method for connecting a semiconductor chip on which a protruding electrode is formed to a wiring board face down, after supplying a first resin to at least one central region of the wiring board and the semiconductor chip. Connecting the semiconductor chip to the wiring board, and then inserting a second gap from the periphery of the semiconductor chip into the gap between the semiconductor chip and the wiring board.
A semiconductor mounting method characterized by injecting a resin. 9. The semiconductor mounting method according to claim 8, wherein a thermoplastic resin is used as the first resin, and a thermosetting resin is used as the second resin. 10. A substrate stage on which a wiring board on which a semiconductor chip having a protruding electrode is mounted is mounted, a transfer mechanism for transferring conductive paste or flux juxtaposed on the substrate stage to the protruding electrode, and the semiconductor chip And a bonding head for transferring the conductive paste or the flux to the protruding electrodes by the transfer mechanism, and then mounting and heating the wiring board on the wiring substrate, wherein the bonding head is held by the bonding head. A semiconductor mounting device comprising a measuring mechanism for measuring a relative height of a semiconductor chip with respect to the transfer mechanism. 11. The semiconductor mounting apparatus according to claim 10, wherein the measuring mechanism is a laser displacement meter installed below when the bonding head is between the substrate stage and the transfer mechanism. 12. The measurement mechanism is characterized in that a semiconductor chip is brought into contact with a substrate stage having a reference height and is calculated from a position of a bonding head based on the contact or a drive control amount of a motor for driving the bonding head. The semiconductor mounting device according to claim 10, wherein 13. A semiconductor mounting method for electrically connecting a semiconductor chip provided with a protruding electrode and a wiring board provided with an electrode pad via said protruding electrode and said electrode pad, wherein said semiconductor chip is formed by a bonding tool. Holding the projection electrode and the electrode pad in contact with each other, heating a bonding tool to melt the projection electrode, and releasing the semiconductor chip from the bonding tool based on the melting of the projection electrode. And mounting the semiconductor chip released from the bonding tool again by the bonding tool and raising the semiconductor chip. 14. A semiconductor mounting method for electrically connecting a semiconductor chip provided with a protruding electrode and a wiring board provided with an electrode pad via said protruding electrode and said electrode pad, wherein said semiconductor chip is formed by a bonding tool. Holding the projection electrode and the electrode pad in contact with each other; heating the bonding tool to melt the projection electrode; and melting the semiconductor chip from the bonding tool based on the melting of the projection electrode. Releasing the semiconductor chip released from the bonding head by the bonding tool and raising the molten protruding electrode to a position where the shape of the fused electrode becomes a drum shape; and cooling the bump by the bonding tool. Fifth
A semiconductor mounting method comprising the steps of: