JP3482840B2 - Method for manufacturing semiconductor device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device which is formed by forming a protruding electrode on a semiconductor element or a wiring board and connecting the semiconductor element and the wiring board via the protruding electrode. is there.

[0002]

2. Description of the Related Art The flip chip method is often used as a method for mounting a semiconductor element having a multi-terminal and a narrow pitch electrode on a wiring board at a high density. 2 as a flip chip method
There are two ways.

The first method is C4 (Controlled).
collapse chip connectio
n) in United States Patent 5
121190. FIG. 10 is a cross-sectional view showing a method of manufacturing a semiconductor device in which connection is made by C4. In the figure, 101 is a semiconductor element, 101a is an electrode of the semiconductor element 101, 103d is a solder bump electrode formed on the electrode 101a, 102 is a thermosetting resin, and 10
Reference numeral 6 is a wiring board, and 106a is an electrode of the wiring board 106.

In the figure, (a) shows a state in which the solder protruding electrode 103d of the semiconductor element 101 and the electrode 106a of the wiring board 106 are aligned, and (b) shows a state in which the semiconductor element 101 is pressed against the wiring board 106. Protruding electrode 103
The semiconductor element 101 and the wiring board 10 by melting and solidifying d
6A and 6B show a state where the semiconductor element 101 and the wiring board 106 are joined, and then a thermosetting resin 102 is filled in the gap between the semiconductor element 101 and the wiring board 106.

The second method is a method of connecting the protruding electrode of the semiconductor element and the wiring board electrode by solid-state bonding. For example, "flip chip bonding by thermocompression bonding with ultrasonic wave".
(Tomioka et al., 3rd Symposium on Mic
rojoing and Assembly Tec
hology in Electronics, Fe
b. 6-7, 1997, Yokohama, pp. 9-
14, 1997).

FIG. 12 is a sectional view showing a method of manufacturing a semiconductor device by the second method. In the figure, 101 is a semiconductor element, 101a is an electrode of the semiconductor element 101, 102 is a thermosetting resin, and 103e is an electrode 1 of the semiconductor element 101.
The gold protrusion electrode formed on the electrode 01a, 106 is the electrode 106
It is a wiring board having a.

In the figure, (a) shows a state in which the protruding electrode 103e of the semiconductor element 101 and the electrode 106a of the wiring board 106 are aligned with each other, and (b) shows a state in which the semiconductor element 101 is heated and pressed against the wiring board 106 to project. A state where the electrode 103e and the electrode 106a are joined by solid-state joining, (c)
Shows a state in which the thermosetting resin 102 is filled in the gap between the semiconductor element 101 and the wiring substrate 106 after the protruding electrode 103e and the electrode 106a are joined by solid-phase joining.

In both of the first method and the second method, the resin is filled in the gap between the semiconductor element 101 and the wiring board 106 due to the difference in the coefficient of thermal expansion between the semiconductor element 101 and the wiring board 106. This is to prevent the protruding electrode or the protruding electrode joint portion from breaking due to thermal stress.

[0009]

Since the conventional method of manufacturing a semiconductor device is performed as described above, the conventional semiconductor device manufacturing method (first method) as shown in FIG. 10 has the following problems. was there. In the first method, since the semiconductor element is pressed against the wiring substrate in the melted state of the protruding electrode at the time of connection as shown in FIG. 11, the protruding electrode is crushed to increase the diameter and the electrode interval is smaller than 250 μm. Then, a short circuit failure occurs in which the adjacent protruding electrodes contact each other. Further, since the gap between the semiconductor element and the wiring board is as small as several tens of μm, it takes a considerable amount of time to fill the resin, which lowers the productivity and entraps bubbles in the resin filled portion.

In the conventional method of manufacturing a semiconductor device as shown in FIG. 12 (second method), the problem of short-circuit failure has been solved for the time being. Since the gap with the substrate is small, there is a problem that the productivity is reduced by filling the resin, and there is a problem that air bubbles are trapped in the resin filled portion.

The present invention has been made to solve the above problems, and an object of the present invention is to obtain a method of manufacturing a semiconductor device which is free from short circuit defects and has good productivity.

[0012]

In the method for manufacturing a semiconductor device according to the present invention, a thermosetting resin is formed on the first electronic component including the electrodes of the first electronic component having a plurality of electrodes. And a step of pressing an electrode member on the thermosetting resin and forming a protruding electrode made of the electrode member on the electrode of the first electronic component so that the tip of the electrode member protrudes from the thermosetting resin. A step of aligning the first electronic component and the second electronic component so that the protruding electrode formed on the first electronic component and the electrode of the second electronic component face each other, and a step of curing the thermosetting resin with bonding the heated state in the first electronic component which is formed in the protruding electrode and the second electronic component electrode.

[0013]

[0014]

[0015] Also, it is also possible to form a thermosetting resin on a first of said while heating the electronic component first electronic component.

[0016]

[0017]

DETAILED DESCRIPTION OF THE INVENTION

Embodiment 1. FIG. 1 is a diagram showing a method of manufacturing a semiconductor device according to the first embodiment. In the figure, 1 is a semiconductor element, 1a is an electrode provided on the semiconductor element 1, and 2 is a thermosetting resin, for example, an epoxy resin or the like can be used. Reference numeral 2a is a thermosetting resin obtained by curing a thermosetting resin 2. Reference numeral 3 is a metal wire made of a solder material. Metal wire 3 is made of a solder material made of an alloy of lead and tin or an alloy of silver and tin. . 3a is a metal ball formed at the tip of a metal wire, 3b is a protruding electrode, 4 is a capillary, 5 is ultrasonic vibration, 6 is a wiring substrate, and 6a is an electrode provided on the wiring substrate 6.

Hereinafter, a method of manufacturing a semiconductor device will be described in the order of FIGS. 1 (a) to 1 (e). First, the thermosetting resin 2 is formed on the semiconductor element 1 having the electrode 1a. On the other hand, an electrode (not shown) is brought close to the tip of the metal wire 3 to cause an electric discharge between the electrode and the metal wire 3, and the tip of the metal wire 3 is melted and solidified. 3a is formed. The diameter of the metal ball 3a can be varied depending on the wire diameter of the metal wire 3, the magnitude of the discharge current, and the discharge time , but in this embodiment, the diameter of the metal ball 3a is larger than the thickness of the thermosetting resin 2. It was formed under the conditions. FIG. 1A is a diagram showing a state in which the thermosetting resin 2 is arranged on the semiconductor element 1 and the metal balls 3 a are formed at the tips of the metal wires 3 as described above.

Next, while the semiconductor element 1 shown in FIG. 1 (a) is heated, the metal ball 3a is pressed against the electrode 1a on the semiconductor element 1 and ultrasonic waves 5 are applied to the capillary 4 so that the metal ball 3a is pressed. And the electrode 1a are joined.

At this time, the metal ball 3a is plastically deformed, and the thermosetting resin 2 existing between the metal ball 3a and the electrode 1a, the metal ball 3a and the oxide film (not shown) on the surface of the electrode 1a are removed. Electrode 1a
And the metal ball 3a are joined. The semiconductor element 1
By heating and applying the ultrasonic wave 5 to the capillary 4, the metal balls 3a are easily deformed and the joining is facilitated. Further, by heating the semiconductor element 1, the viscosity of the thermosetting resin 2 is reduced by heat, and the resin 2 can be easily removed from the joint.

In the case of the present embodiment, the force for pressing the metal ball 3a against the electrode 1a is 20 to 200 g, the ultrasonic wave intensity is 0.15 to 0.8 w, and the epoxy resin is used. The temperature for heating the element 1 was 120 ° C. The heating temperature of the semiconductor element 1 may be changed depending on the thermosetting resin. FIG. 1B is a diagram showing a state in which the metal ball 3a is bonded to the electrode 1a on the semiconductor element 1 as described above.

As shown in FIG. 1B, the semiconductor device 1
After joining the upper electrode 1a and the metal ball 3a, the capillary 4 is pulled up to cut the metal wire 3 to form the protruding electrode 3b. At this time, the metal ball 3a and the protruding electrode 3b are projected at least above the thermosetting resin 2 formed on the semiconductor element 1.
The metal wire 3 is cut near the boundary between the metal wire 3 and the metal wire 3.

By making both the diameter of the metal ball 3a and the height of the protruding electrode 3b at least larger than the thickness of the thermosetting resin 2, the tip of the capillary 4 contacts the thermosetting resin 2 when forming the protruding electrode. As a result, it is possible to prevent the resin 2 from adhering to the tip of the capillary 4, and as a result,
It is possible to stably and continuously form the protruding electrodes 3b without hindering the formation of the metal balls 3a.

In the case of the present embodiment, the thermosetting resin 2 is applied to the semiconductor element 1 having an electrode interval of 120 μm pitch to a thickness of 30.
The metal metal ball (solder ball) 3a having a diameter of 80 μm was formed by using the wire 3 having a wire diameter of 30 μm and made of an alloy of lead and tin, and the protruding electrode 3b having a height of 55 μm was formed. FIG. 1C is a diagram showing a state in which the protruding electrode 3b is formed on the electrode 1a on the semiconductor element 1 as described above.

As shown in FIG. 1C, the semiconductor device 1
After the formation of the protruding electrodes 3b to the electrodes 1a of the upper, the wiring substrate 6 having an electrode 6a corresponding to the electrode 1a on the semiconductor element 1, the electrode 1a on the semiconductor device 1 (protruding electrodes 3b) The electrodes 6a on the wiring board 6 are aligned so as to correspond to each other.

FIG. 1D shows the protruding electrode 3 on the semiconductor element 1.
It is the figure which showed the state which aligned b and the electrode 6a of the wiring board 6. Although an alumina substrate is used as the wiring substrate 6 in the present embodiment, it is also possible to use ceramics such as glass ceramics or a resin substrate such as a printed circuit board instead.

Next, the semiconductor element 1 and the wiring board 6 are pressed in a heated state to melt the protruding electrode 3b made of a solder material to bond the protruding electrode 3b to the electrode 6a of the wiring board 6 and thermosetting type. The resin 2 is cured to bond the electrode 1a on the semiconductor element 1 to the electrode 6a on the wiring board 6 and the semiconductor element 1 to the wiring board 6.

At this time, the protruding electrode 3b is formed so as to protrude from the thermosetting resin 2, and the tip of the solder material constituting the protruding electrode 3b is covered with the thermosetting resin 2. Since it does not exist, the connection between the protruding electrode 3b and the electrode 6a is easily performed. Further, since the periphery of the bump electrode 3b is filled with the thermosetting resin 2, even if the semiconductor element 1 is pressed against the wiring board 6 in a molten state of the bump electrode 3b, the diameter of the bump electrode 3b increases. The contact between the adjacent protruding electrodes is prevented, and a short circuit failure does not occur.

At the time of bonding, the semiconductor element 1 is pressed against the wiring board 6, and the temperature of the semiconductor element 1 is kept at the temperature of the thermosetting resin until the thermosetting resin 2 fits into the gap between the semiconductor element 1 and the wiring board 6. The temperature of the resin 2 was maintained at a temperature at which the viscosity was minimum, and then the temperature of the semiconductor element 1 was raised to the bonding temperature. In the present embodiment, the temperature of the wiring board 6 is set to 120 ° C. at which the viscosity of the epoxy thermosetting resin is minimized. Figure 1 (e)
FIG. 6 is a diagram showing a state in which the semiconductor element 1 and the wiring board 6 are combined as described above.

In the present embodiment, the semiconductor device can be manufactured by bonding the semiconductor elements having the electrode interval of 120 μm pitch to the wiring board without a short circuit defect. Note that the thermosetting resin 2 was cured by raising the temperature of the semiconductor element 1 while the protruding electrode 3b and the electrode 6a were bonded.
Alternatively, the thermosetting resin 2 can be cured by heating the wiring substrate 6 to which the semiconductor element 1 is bonded in an oven.

When the semiconductor element 1 and the wiring board 6 are joined, if an oxide film is present at the connection interface, the metallic contact between the protruding electrode 3b and the electrode 6a may be hindered and the connection strength may be reduced. Therefore, when the semiconductor element 1 is pressed against the wiring board 6, ultrasonic vibration may be applied to the semiconductor element 1 to remove the oxide film on the surfaces of the protruding electrodes 3b and the electrodes 6a.

In the present embodiment, filling of the thermosetting resin 2 into the gap between the semiconductor element and the wiring board is completed at the same time when the electrodes (projection electrodes) on the semiconductor element and the electrodes on the wiring board are joined. Therefore, unlike the conventional method, it is not necessary to inject the resin after joining the semiconductor element and the wiring board, and it is possible to significantly improve the productivity. Furthermore, since the resin is formed before the formation of the protruding electrodes, rather than being filled with the resin after joining, bubbles are not caught in the resin-filled portion. Further, when the electrodes (projection electrodes) on the semiconductor element and the electrodes on the wiring board are bonded, the resin is filled between the projection electrodes, so that it is possible to prevent contact between adjacent projection electrodes at the time of bonding. .

Further, in the present embodiment, since the protruding electrode protruding from this resin is formed after the curable resin is formed, the height of the protruding electrode can be easily controlled and the portion protruding from the resin can be easily controlled. The wiring board and the electrode can be easily joined without getting dirty.

Embodiment 2. FIG. 2 is a diagram showing a method of manufacturing a semiconductor device according to the second embodiment. Since the reference numerals are the same as those described in the first embodiment, the description will be omitted. Hereinafter, a method of manufacturing a semiconductor device will be described in the order of FIGS. 2A to 2F.

First, an electrode (not shown) is brought close to the tip of the metal wire 3 to cause an electric discharge between the electrode and the metal wire 3, and the tip of the metal wire 3 is melted and solidified. A metal ball 3a is formed on.
The diameter of the metal ball 3a can be varied depending on the wire diameter of the metal wire 3, the magnitude of the discharge current, and the discharge time , but in this embodiment, the diameter of the metal ball 3a is larger than the thickness of the thermosetting resin 2. It was formed under the conditions. As shown in FIG. 2A, the metal ball 3a is attached to the tip of the metal wire 3 as described above.
It is the figure which showed the state in which was formed.

Next, the metal ball 3a is pressed against the electrode 1a on the semiconductor element 1 while the semiconductor element 1 shown in FIG. 2 (a) is heated, and ultrasonic waves 5 are applied to the capillary 4 to make the metal ball 3a. And the electrode 1a are joined.

At this time, the metal ball 3a is plastically deformed and the electrode 1a and the metal ball 3a are joined. In addition,
By heating the semiconductor element 1 and applying the ultrasonic wave 5 to the capillary 4, the metal ball 3a is easily deformed and the bonding is facilitated.

In this embodiment, the force for pressing the metal ball 3a against the electrode 1a is 20 to 200 g, the ultrasonic wave intensity is 0.15 to 0.8 w, and the temperature for heating the semiconductor element 1 is 120 ° C. Carried out. FIG. 2B is a diagram showing a state in which the metal ball 3a is bonded to the electrode 1a on the semiconductor element 1 as described above.

As shown in FIG. 1B, the semiconductor device 1
After joining the upper electrode 1a and the metal ball 3a, the capillary 4 is pulled up to cut the metal wire 3 to form the protruding electrode 3b. At this time, the metal balls 3a and the metal balls 3a and the metal electrodes 3b are arranged so that the metal balls 3a and the protruding electrodes 3b are higher than at least a predetermined height (protruding from the thermosetting resin 2 on the semiconductor element 1 formed in a later step). The metal wire 3 is cut near the boundary with the wire 3.

In the case of the present embodiment, a metal ball (solder ball) 3a having a diameter of 80 μm is formed on the semiconductor element 1 having an electrode interval of 120 μm pitch by using the wire 3 made of an alloy of lead and tin having a wire diameter of 30 μm. A protruding electrode 3b having a height of 55 μm was formed. FIG. 2C is a diagram showing a state in which the protruding electrode 3b is formed on the electrode 1a on the semiconductor element 1 as described above.

As shown in FIG. 2C, the semiconductor device 1
After forming the protruding electrode 3b on the upper electrode 1a, the thermosetting resin 2 is formed on the semiconductor element 1. At this time, the thermosetting resin 2 is projected so as to protrude from the thermosetting resin 2 formed by the protruding electrode 3b provided on the electrode 1a on the semiconductor element 1.
To form. In the case of the present embodiment, the thermosetting resin 2 is installed with a thickness of 30 μm. FIG. 2D is a diagram showing a state in which the thermosetting resin 2 is formed on the semiconductor element 1 in this way.

1 (d) and 1 of the first embodiment.
2E and 2E in the same manner as described in FIG.
As shown in (f), the electrode 1a on the semiconductor element 1
The (protruding electrode 3a) and the electrode 6a on the power distribution substrate 6 are bonded. In this embodiment, the thermosetting resin 2 is not formed after the bump electrode 3b is formed, but the thermosetting resin 2 is formed after the projection electrode 3b is formed. . Therefore, the surface of the protruding electrode 3b may be contaminated when the thermosetting resin 2 is formed. Therefore, the electrode 1a (the protruding electrode 3b) on the semiconductor element 1 and the power distribution board 6 may be formed.
When the upper electrode 6a is joined, the ultrasonic wave 5 is applied to remove the dirt on the protruding electrode 3b so that the protruding electrode 3b and the power distribution substrate 6a are joined together.

When the semiconductor element 1 and the wiring board 6 are joined, if an oxide film is present at the connection interface, the metallic contact between the protruding electrode 3b and the electrode 6a is obstructed, and the connection strength is reduced. When the semiconductor element 1 is pressed against the wiring board 6, ultrasonic vibration is applied to the semiconductor element 1 to apply the protruding electrodes 3b.
And by removing the oxide film on the surface of the electrode 6a, it was possible to join with high connection strength.

In the present embodiment, filling of the thermosetting resin 2 into the gap between the semiconductor element and the wiring board is completed at the same time when the electrodes (projection electrodes) on the semiconductor element and the electrodes on the wiring board are joined. Therefore, unlike the conventional method, it is not necessary to inject the resin after joining the semiconductor element and the wiring board, and it is possible to significantly improve the productivity. Further, since the resin is formed before the joining instead of being filled with the resin after the joining, air bubbles are not caught in the resin filled portion. Further, when the electrodes (projection electrodes) on the semiconductor element and the electrodes on the wiring board are joined, the resin is filled between the projection electrodes, so that it is possible to prevent contact between adjacent projection electrodes at the time of joining. .

Embodiment 3. FIG. 3 is a diagram showing a method of manufacturing a semiconductor device according to the third embodiment. In the figure, 7 is a solder material, and this solder material 7 is composed of an alloy of lead and tin having the same composition as the solder material forming the protruding electrodes 3b described in FIG. 1 of the first embodiment. The other reference numerals are the same as those described in the first embodiment, and the description thereof will be omitted.

FIG. 3A is a view showing a state in which the thermosetting resin 2 is arranged on the semiconductor element 1. The tip of the metal wire 3 is a metal having a diameter larger than the thickness of the thermosetting resin 2. A ball 3a is formed.

In FIG. 3B, the metal ball 3a is pressed against the electrode 1a on the semiconductor element 1 in a state where the semiconductor element 1 is heated, and ultrasonic waves 5 are applied to the capillary 4, so that the metal ball 3a and the electrode 1a are separated from each other. In the figure showing the joined state,
By heating the semiconductor element 1, a thermosetting resin 2
The viscosity of the metal ball 3a is reduced and the deformation of the metal ball 3a is promoted to facilitate the joining of the metal ball 3a and the electrode 1a.

In FIG. 3 (c), after bonding the metal ball 3a and the electrode 1a, the capillary 4 is pulled up to cut the metal wire 3 near the boundary between the metal ball 3a and the metal wire 3, and the protruding electrode 3b. In the figure showing the state in which the tips of the capillaries 4 are formed on the resin 2 at the time of forming the protruding electrodes by making the diameter of the metal balls 3a and the height of the protruding electrodes 3b at least larger than the thickness of the thermosetting resin 2. Since the thermosetting resin 2 adheres to the tips of the capillaries 4 in contact with each other, it is possible to stably and continuously form the protruding electrodes 3b without hindering the formation of the metal balls 3a. As described above, the steps shown in FIGS. 3A to 3C are formed in the same manner as the steps shown in FIGS. 1A to 1C of the embodiment.

As shown in FIG. 3C, the semiconductor device 1
After the protruding electrode 3b is formed on the upper electrode 1a, the wiring board 6 having the electrode 6a corresponding to the electrode 1a on the semiconductor element 1 becomes the electrode 1a (the protruding electrode 3b) on the semiconductor element 1. The electrodes 6a on the wiring board 6 are aligned with each other. It is assumed that the solder material 7 is provided on the electrodes 6a of the wiring board 6.

FIG. 3D shows a state in which the protruding electrode 3b on the semiconductor element 1 and the electrode 6a of the wiring substrate 6 to which the solder material 7 is supplied on the electrode 6a are aligned as described above. It is a figure.

Next, the semiconductor element 1 and the wiring board 6 are pressed in a heated state to melt the protruding electrodes 3b and the solder material 7 to bond the semiconductor element 1 and the wiring board 6, and at the same time, a thermosetting resin. Cure 2 At this time, since the solder material 7 is provided on the electrode 6a of the power distribution board 6,
The thickness of the solder material 7 provided on the electrode 6a is equal to that of the protruding electrode 3
It is possible to absorb the height variation of b and the height variation due to the waviness and the unevenness of the substrate, and prevent the open defect caused by the protrusion electrode 3b not being able to contact the electrode 6a.

In the present embodiment, the solder material is made of an alloy of lead and tin, but this is not particularly limited, and tin, indium or lead-indium, lead-tin-indium, silver- Tin and gold-tin alloys can be used.

When the solder material forming the protruding electrode 3b and the solder material 7 are different, it is not always necessary to melt both the solder material forming the protruding electrode 3b and the solder material 7, and only the solder material having a low melting point is required. It is possible to bond even if melted.

During the bonding, the temperature of the semiconductor element 1 is kept at the thermosetting type until the semiconductor element 1 is pressed against the wiring board 6 and the thermosetting resin 2 fits in the gap between the semiconductor element 1 and the wiring board 6. The temperature of the resin 2 was kept at the minimum temperature, and then the temperature of the semiconductor element 1 was raised to the bonding temperature. In this embodiment, the temperature of the wiring board 6 is set to 120 ° C. at which the viscosity of the epoxy thermosetting resin 2 is minimized. Figure 3 (e) is as described above, it is a diagram showing a state of being bonded to the semiconductor element 1 and the wiring board 6.

The thermosetting resin 2 is composed of the protruding electrode 3b and the electrode 6.
The temperature of the semiconductor element 1 was increased and cured while the semiconductor element 1 and a were bonded together, but the wiring board 6 to which the semiconductor element 1 was bonded was heated in an oven to cure the thermosetting resin 2. You can also let it.

Further, when the semiconductor element 1 and the wiring board 6 are joined, if the oxide film exists at the connection interface, the protruding electrode 3
Although the metallic contact between the electrode b and the electrode 6a is hindered and the connection strength is reduced, the ultrasonic vibration 5 is applied to the semiconductor element 1 when the semiconductor element 1 is pressed against the wiring board 6, and the protruding electrode 3b and the method of removing the oxide film on the surface of the solder material 7 may be used.

In the present embodiment, filling of the thermosetting resin 2 into the gap between the semiconductor element and the wiring board is completed at the same time when the electrodes (projection electrodes) on the semiconductor element and the electrodes on the wiring board are joined. Therefore, unlike the conventional method, it is not necessary to inject the resin after joining the semiconductor element and the wiring board, and it is possible to significantly improve the productivity without entrapping air bubbles in the resin-filled portion. . Further, when the electrodes (projection electrodes) on the semiconductor element and the electrodes on the wiring board are bonded, the resin is filled between the projection electrodes, so that it is possible to prevent contact between adjacent projection electrodes at the time of bonding. .

Further, in this embodiment, since the solder material is provided on the electrodes of the wiring board, when the electrodes (projection electrodes) on the semiconductor element and the electrodes on the wiring board are joined, the solder material The thickness absorbs the height variation of the protruding electrode and the height variation due to the undulations and irregularities of the substrate, and therefore it is possible to prevent the open defect that occurs because the protruding electrode cannot contact the electrode of the wiring substrate.

Fourth Embodiment FIG. 4 is a diagram showing a method of manufacturing a semiconductor device according to the fourth embodiment. Since the reference numerals in the figure are the same as those described in the first embodiment, the description thereof will be omitted. In the first embodiment, the protruding electrode is formed on the electrode on the semiconductor element, and the protruding electrode and the electrode on the wiring board are joined together. However, in the present embodiment, the protruding electrode is formed on the electrode on the wiring board. The bump electrodes are formed and the electrodes on the semiconductor element are bonded to each other.

In FIG. 4A, the thermosetting resin 2 is arranged on the wiring board 6, and the thermosetting resin 2 is attached to the tip of the metal wire 3.
It is a figure which shows the state which formed the metal ball 3a whose diameter is larger than the thickness of. Although an alumina substrate is used as the wiring substrate 6 in the present embodiment, other ceramics such as glass ceramics or a resin substrate such as a printed circuit board may be used.

In FIG. 4B, the metal balls 3a are pressed against the electrodes 6a on the wiring board 6 while the wiring board 6 is being heated.
It is a figure which shows the state which joined the metal ball 3a and the electrode 6a by applying the ultrasonic wave 5 to the capillary 4.
By heating the wiring substrate 6, the viscosity of the thermosetting resin 2 is reduced, the metal balls 3a are easily deformed, and the metal balls 3a and the electrodes 6a are easily joined.

In FIG. 4C, after the metal ball 3a and the electrode 6a are joined, the capillary 4 is pulled up to cut the metal wire 3 near the boundary between the metal ball 3a and the metal wire 3 and the protruding electrode 3b. It is a figure which shows the state which formed.
By making both the diameter of the metal ball 3a and the height of the protruding electrode 3b at least larger than the thickness of the thermosetting resin 2, the tip of the capillary 4 comes into contact with the resin 2 when the protruding electrode is formed, and the tip is thermoset. The resin 2 can be prevented from adhering. As a result, it becomes possible to stably and continuously form the protruding electrodes 3b without hindering the formation of the metal balls 3a.

FIG. 4D is a view showing a state in which the electrode 1a on the semiconductor element 1 and the protruding electrode 3b on the wiring board 6 are aligned with each other.

In FIG. 4 (e), the semiconductor element 1 and the wiring board 6 are pressed in a heated state to melt the protruding electrodes 3b made of a solder material to be bonded to the electrodes 1a of the semiconductor element 1 and a thermosetting resin. It is a figure which shows the state which hardened 2 and was made into the thermosetting type resin 2a hardened. Protruding electrode 3b
Since the tip portion of is not covered with the thermosetting resin 2, the connection with the electrode 1a is easily performed. In addition, the protruding electrode 3
Since the periphery of b is filled with the thermosetting resin 2, the contact between the protruding electrodes melted during the joining is prevented, and a short circuit failure does not occur.

At the time of joining, the temperature of the semiconductor element 1 is kept at the thermosetting type until the semiconductor element 1 is pressed against the wiring board 6 and the thermosetting type resin 2 fits into the gap between the semiconductor element 1 and the wiring board 6. The temperature of the resin 2 was maintained at a temperature at which the viscosity of the resin 2 was minimum, and then the temperature of the semiconductor element 1 was raised to the bonding temperature.

The present embodiment is the same as the first embodiment except that the semiconductor element 1 and the wiring board 6 are replaced with each other. Therefore, the first embodiment is the same as the first embodiment.
4 (a) to 4 (e) in the same manner as the process described in FIG.
The process shown in FIG. 3 is performed to bond the electrode 6a (projection electrode) on the wiring board 6 and the electrode 1a on the semiconductor element 1.

In this embodiment, since an epoxy thermosetting resin is used, the temperature is 120 ° C., which minimizes the viscosity. In addition, in the present embodiment, the thermosetting resin 2 is used as the semiconductor element 1 while the protruding electrode 3b and the electrode 1a are bonded to each other.
However, the thermosetting resin 2 can be cured by heating the wiring substrate 6 to which the semiconductor element 1 is bonded in an oven.

When the semiconductor element 1 and the wiring board 6 are joined, if the oxide film exists at the connection interface, the bump electrode 3
Although the metallic contact between b and the electrode 6a is hindered and the connection strength is reduced, when the semiconductor element 1 is pressed against the wiring board 6, ultrasonic vibration 5 is applied to the semiconductor element 1 to apply the electrode 1 to the electrode 1.
By removing the oxide film on the surfaces of a and the protruding electrode 3b, it was possible to join with high connection strength.

In the present embodiment, the filling of the thermosetting resin into the gap between the semiconductor element and the wiring board is completed at the same time when the electrodes on the semiconductor element and the electrodes (projection electrodes) on the wiring board are joined. Since it is not necessary to inject resin after joining the semiconductor element and the wiring board as in the conventional method, it is possible to remarkably improve the productivity. Furthermore, since the resin is formed before the formation of the protruding electrodes, rather than being filled with the resin after joining, bubbles are not caught in the resin-filled portion.
Further, when the electrodes on the semiconductor element and the electrodes (projection electrodes) on the wiring board are bonded, resin is filled between the projection electrodes, so that it is possible to prevent contact between adjacent projection electrodes at the time of bonding. .

Embodiment 5. 5A and 5B are views showing a method of manufacturing a semiconductor device according to the fifth embodiment, in which 8 is a metal wire made of gold, silver or copper, 8a is a metal ball formed at the tip of the metal wire, and 8b is a protruding electrode. ,
Since other reference numerals are the same as those in the first embodiment, the description thereof will be omitted.

FIG. 5A is a view showing a state in which the thermosetting resin 2 is arranged on the semiconductor element 1. The tip of the metal wire 8 has a diameter larger than that of the thermosetting resin 2. A ball 8a is formed.

In FIG. 5B, the metal ball 8a is pressed against the electrode 1a on the semiconductor element 1 in a state where the semiconductor element 1 is heated, and an ultrasonic wave 5 is applied to the capillary 4 to separate the metal ball 8a and the electrode 1a. In the figure showing the joined state,
By heating the semiconductor element 1, a thermosetting resin 2
The viscosity of is reduced, and the resin 2 can be easily removed from the joint. The force for pressing the metal ball against the electrode 1a is 2
0-200g, ultrasonic intensity is 0.15-0.8
w.

In FIG. 5C, after bonding the metal ball 8a and the electrode 1a, the capillary 4 is pulled up to cut the metal wire 8 near the boundary between the metal ball 8a and the metal wire 8 and the protruding electrode 8b. In the figure showing the state in which the tips of the capillaries 4 are formed on the resin 2 at the time of forming the protruding electrodes by making the diameter of the metal balls 8a and the height of the protruding electrodes 8b at least larger than the thickness of the thermosetting resin 2. It makes contact and prevents the resin 2 from adhering to the tip. As a result, it becomes possible to stably and continuously form the protruding electrodes 8b without hindering the formation of the metal balls 8a. In this embodiment, a thermosetting resin having a thickness of 30 μm is installed on a semiconductor element having an electrode interval of 100 μm pitch and a wire diameter of 25 μm.
A metal ball having a diameter of 70 μm was formed by using a gold wire of m, and a protruding electrode having a height of 47 μm was formed.

FIG. 5D is a view showing a state in which the protruding electrode 8b formed on the electrode 1a on the semiconductor element 1 and the electrode 6a of the wiring board 6 are aligned with each other. Although an alumina substrate is used as the wiring substrate 6 in the present embodiment, other ceramics such as glass ceramics or a resin substrate such as a printed circuit board may be used. As described above, the steps shown in FIGS. 5A to 5D are formed in the same manner as the state shown in FIGS. 1A to 1D of the first embodiment.

Next, the semiconductor element 1 and the wiring board 6 are pressed in a heated state to bond the protruding electrode 8b and the electrode 6a together and to cure the thermosetting resin 2 to cure the electrode 1a on the semiconductor element 1. And the electrodes 6a on the wiring substrate 6 and the semiconductor element 1 and the wiring substrate 6 are coupled.

At this time, the protruding electrode 8b provided on the electrode 1a of the semiconductor element 1 and the oxide film on the surface of the electrode 6a on the wiring substrate 6 are removed to bond the protruding electrode 8b and the electrode 6a by solid phase bonding. . Solid phase bonding can be achieved by thermocompression bonding,
If the ultrasonic vibration 5 is applied to the semiconductor element 1 while the semiconductor element 1 is pressed against the wiring board 6, the oxide film between both electrodes can be easily removed, and the joining time can be shortened and the joining temperature and the joining load can be reduced. Is possible. FIG. 5E is a diagram showing a state in which the semiconductor element 1 and the wiring board 6 are combined as described above.

In the present embodiment, the bonding load per protruding electrode is 20 to 200 g, the strength of ultrasonic waves per protruding electrode is 0.15 to 0.8 w, and the bonding temperature when ultrasonic waves are not used. 250-400 ℃, the bonding temperature when using ultrasonic wave is 1
The temperature was set to 00 to 250 ° C. Further, at the time of joining, the semiconductor element 1
Is pressed against the wiring board 6, and the thermosetting resin 2 is a semiconductor.
The temperature of the semiconductor element 1 was kept at a temperature at which the viscosity of the thermosetting resin 2 became the minimum until it fits in the gap between the element 1 and the wiring board 6, and then the temperature of the semiconductor element 1 was raised to the bonding temperature. .

In this embodiment, since an epoxy thermosetting resin is used, the temperature is set to 120 ° C. where the viscosity is minimized. The thermosetting resin 2 raised the temperature of the semiconductor element 1 and cured it while the protruding electrode 8b and the electrode 6a were still bonded, but the wiring board 6 to which the semiconductor element 1 was bonded was placed in an oven. The thermosetting resin 2 can be cured by heating. In this embodiment, 10
A semiconductor element having a fine electrode interval of 0 μm pitch could be bonded to the wiring board.

In the present embodiment, filling of the thermosetting resin 2 into the gap between the semiconductor element and the wiring board is completed at the same time when the electrodes (projection electrodes) on the semiconductor element and the electrodes on the wiring board are joined. Therefore, unlike the conventional method, it is not necessary to inject the resin after joining the semiconductor element and the wiring board, and it is possible to significantly improve the productivity. Furthermore, since the resin is formed before the formation of the protruding electrodes, rather than being filled with the resin after joining, bubbles are not caught in the resin-filled portion.

Sixth Embodiment FIG. 6 is a diagram showing a method of manufacturing a semiconductor device according to the sixth embodiment. In the figure, 7 is a solder material. Other reference numerals in the figure are the same as those in FIG. 5 of the fifth embodiment, and therefore the description thereof is omitted. Figure 6
FIG. 3A is a diagram showing a state in which a thermosetting resin 2 is arranged on the semiconductor element 1. A metal ball 8a having a diameter larger than the thickness of the thermosetting resin 2 is formed at the tip of the metal wire 8. ing.

In FIG. 6B, the metal ball 8a is pressed against the electrode 1a on the semiconductor element 1 while the semiconductor element 1 is heated, and ultrasonic waves 5 are applied to the capillary 4, so that the metal ball 8a and the electrode 1a are separated from each other. In the figure showing the joined state,
By heating the semiconductor element 1, a thermosetting resin 2
The viscosity of is reduced, and the resin 2 can be easily removed from the joint.

In FIG. 6C, after the metal ball 8a and the electrode 1a are joined, the capillary 4 is pulled up to cut the metal wire 8 near the boundary between the metal ball 8a and the metal wire 8 and the protruding electrode 8b. In the figure showing the state in which the tips of the capillaries 4 are formed on the resin 2 at the time of forming the protruding electrodes by making the diameter of the metal balls 8a and the height of the protruding electrodes 8b at least larger than the thickness of the thermosetting resin 2. It is possible to prevent the resin 2 from contacting and adhering to the tip.
As a result, it becomes possible to stably and continuously form the protruding electrodes 8b without hindering the formation of the metal balls 8a.

FIG. 6D shows the protruding electrode 8 on the semiconductor element 1.
FIG. 6 is a diagram showing a state where b and the electrode 6a of the wiring substrate 6 on which the solder material 7 is formed are aligned. In the present embodiment, the solder material 7 is an alloy made of silver and tin, but it may be an alloy of tin, indium or lead-indium, lead-tin-indium, lead-tin, gold-tin.

In FIG. 6 (e), the semiconductor element 1 and the wiring board 6 are pressed in a heated state, and the protruding electrode 8b and the electrode 6a are pressed.
It is a figure which shows the state which joined together with and hardened thermosetting type resin 2 to make thermosetting type resin 2a. Since the solder material 7 is provided, the thickness of the solder material 7 absorbs the height variation of the protruding electrode 8b and the height variation of the wiring substrate 6 due to the surface unevenness or warpage, and the protruding electrode 8b cannot contact the electrode 6a. This has the effect of preventing open defects that may occur.

The semiconductor element 1 is connected to the wiring board 6 at the time of bonding.
If the ultrasonic vibration 5 is applied to the semiconductor element 1 in a state of being pressed against, the oxide film between both electrodes can be easily removed, and the joining time can be shortened and the joining temperature and the joining load can be reduced.
At the time of bonding, the semiconductor element 1 is pressed against the wiring board 6, and the temperature of the semiconductor element 1 is kept at the temperature of the thermosetting resin 2 until the thermosetting resin 2 fits into the gap between the semiconductor element 1 and the wiring board 6.
The temperature is kept at a temperature at which the viscosity of the
Was raised to the junction temperature.

In this embodiment, since an epoxy thermosetting resin is used, the process is performed at 120 ° C. where the viscosity is the minimum. The thermosetting resin 2 raised the temperature of the semiconductor element 1 and cured it while the protruding electrode 3b and the electrode 6a were still bonded, but the wiring substrate 6 to which the semiconductor element 1 was bonded was also placed in an oven. The thermosetting resin 2 can be cured by heating.

In the present embodiment, the filling of the thermosetting resin 2 into the gap between the semiconductor element 1 and the wiring board 6 is completed at the same time as the bonding, so that the semiconductor element 1 and the wiring board 6 are connected to each other as in the conventional method. After joining, it is not necessary to inject a resin, and the productivity can be remarkably improved.

In addition, when the solder material 7 was melted in joining the semiconductor element 1 and the wiring board 6, the protruding electrode 8
A fillet made of an alloy of the molten solder material 7 and gold forming the protruding electrode was formed around b, and the bonding strength was increased.

Seventh Embodiment FIG. 7 is a diagram showing a method of manufacturing a semiconductor device according to the seventh embodiment. Since the reference numerals in the figure are the same as those in FIG. 5 of the fifth embodiment, the description thereof will be omitted. In the fifth embodiment, the protruding electrode is formed on the electrode on the semiconductor element, and the protruding electrode and the electrode on the wiring board are joined together. However, in the present embodiment, the protruding electrode is formed on the electrode on the wiring board. The bump electrodes are formed and the electrodes on the semiconductor element are bonded to each other.

In FIG. 7A, the thermosetting resin 2 is arranged on the wiring board 6, and the thermosetting resin 2 is attached to the tip of the metal wire 8.
It is a figure which shows the state which formed the metal ball 8a whose diameter is larger than the thickness of.

In FIG. 7B, the metal balls 8a are pressed against the electrodes 6a on the wiring board 6 while the wiring board 6 is heated,
It is a figure which shows the state which joined the metal ball 8a and the electrode 6a by applying the ultrasonic wave 5 to the capillary 4.
In addition, the wiring board 6 was heated in order to reduce the viscosity of the thermosetting resin 2 and facilitate the removal of the resin 2 from the joint. The force of pressing the metal ball against the electrode 6a is 20 to 20.
The ultrasonic wave intensity is 0.15 to 0.8 w.

In FIG. 7C, after the metal ball 8a and the electrode 6a are joined, the capillary 4 is pulled up to cut the metal wire 8 near the boundary between the metal ball 8a and the metal wire 8, and the protruding electrode 8b. It is a figure which shows the state which formed.
By making both the diameter of the metal ball 8a and the height of the protruding electrode 8b at least larger than the thickness of the thermosetting resin 2, the tip of the capillary 4 comes into contact with the resin 2 when the protruding electrode is formed, and the resin 2 is attached to the tip. It can prevent the adhesion. As a result, it becomes possible to stably and continuously form the protruding electrodes 8b without hindering the formation of the metal balls 8a.

FIG. 7D is a view showing a state in which the protruding electrode 8b formed on the electrode 6a on the wiring substrate 6 and the electrode 1a on the semiconductor element 1 are aligned with each other.

In FIG. 7E, the semiconductor element 1 and the wiring board 6 are pressed in a heated state, the protruding electrode 8b and the electrode 1a are solid-phase bonded by thermocompression bonding, and the thermosetting resin 2 is cured. It is a figure which shows the state which became the thermosetting resin 2a hardened | cured. The electrode 1a and the protruding electrode 8b can be joined by thermocompression bonding, but if ultrasonic vibration is applied to the semiconductor element 1 while the semiconductor element 1 is pressed against the wiring board 6, the oxide film between the electrodes can be easily removed. Therefore, it becomes possible to shorten the joining time and the joining temperature and the joining load.

In this embodiment, the bonding load per protruding electrode is 20 to 200 g, the ultrasonic intensity per protruding electrode is 0.15 to 0.8 w, and the bonding is performed when the ultrasonic wave is not used. The temperature was 250 to 400 ° C., and the bonding temperature when using ultrasonic waves was 100 to 250 ° C. Incidentally, at the time of bonding by pressing the semiconductor element 1 on the wiring board 6, the temperature of the semiconductor element 1 is to fit in the gap of the resin 2 of thermosetting type semiconductor element 1 and the wiring board 6, the thermosetting resin 2 The temperature of the semiconductor element 1 was maintained at a temperature at which the viscosity was minimum, and then the temperature of the semiconductor element 1 was raised to the bonding temperature for bonding.

In this embodiment, since the epoxy type thermosetting resin is used, the process is performed at 120 ° C. where the viscosity is minimum. The thermosetting resin 2 raised the temperature of the semiconductor element 1 and cured it while the protruding electrode 8b and the electrode 6a were still bonded, but the wiring board 6 to which the semiconductor element 1 was bonded was placed in an oven. The thermosetting resin 2 can be cured by heating.

In the present embodiment, the filling of the thermosetting resin 2 into the gap between the semiconductor element 1 and the wiring board 6 is completed at the same time as the joining, so that the semiconductor element 1 and the wiring board 6 are connected to each other as in the conventional method. After joining, it is not necessary to inject a resin, and the productivity can be remarkably improved.

In the first to sixth embodiments, after the step of forming the protruding electrodes is completed, the protruding electrodes are pressed against the flat plate to deform the tips of the protruding electrodes so that each protruding electrode has a predetermined height in advance. You can also arrange them.

Eighth Embodiment FIG. 8 is a diagram showing a method of manufacturing a semiconductor device according to the eighth embodiment, in which 9 is a metal wire made of gold, silver, copper or a lead-tin or silver-tin alloy, and 9a is a metal wire 9. A metal ball formed on the tip, 9b is a protruding electrode formed by using a wire material made of gold, silver, copper or a lead-tin or silver-tin alloy, 10
Is a flat plate, 11 is an anisotropic conductive film (ACF), 11a
Is a cured ACF, and other reference numerals are the same as those in the first embodiment.
Since it is the same as that of FIG.

FIG. 8A shows a state in which a thermosetting resin 2 is arranged on the semiconductor element 1 and a metal ball 9a having a diameter larger than the thickness of the thermosetting resin 2 is formed at the tip of the metal wire 9. FIG.

In FIG. 8B, the metal ball 9a is pressed against the electrode 1a on the semiconductor element 1 while the semiconductor element 1 is heated, and an ultrasonic wave 5 is applied to the capillary 4, so that the metal ball 9a and the electrode 1a are separated from each other. In the figure showing the joined state,
The semiconductor element 1 was heated in order to reduce the viscosity of the thermosetting resin 2 and facilitate the removal of the resin 2 from the joint.

In FIG. 8C, after the metal ball 9a and the electrode 1a are joined, the capillary 4 is pulled up to cut the metal wire 9 near the boundary between the metal ball 9a and the metal wire 9, and the protruding electrode 9b. In the figure showing the state in which the tips of the capillaries 4 are formed on the resin 2 at the time of forming the protruding electrodes by making the diameter of the metal balls 9a and the height of the protruding electrodes 9b at least larger than the thickness of the thermosetting resin 2. It is possible to prevent the resin 2 from adhering to the tip due to contact. As a result, it becomes possible to stably and continuously form the protruding electrodes 9b without hindering the formation of the metal balls 9a.

As described above, as shown in FIGS. 8A to 8C, the protruding electrode 9b is formed on the electrode 1a of the semiconductor element 1 in the same manner as described in the first embodiment.

As shown in FIG. 8C, the semiconductor device 1
After the protruding electrode 9b is formed on the electrode 1a, the tip of the protruding electrode 9b is pressed by the flat plate 10. By pressing the tip of the protruding electrode 9b with the flat plate 10 in this manner, a flat surface is formed on the tip of the protruding electrode 9b, and at the same time, the heights of the plurality of protruding electrodes 9b can be made uniform. FIG. 8D is a view showing a state where the tip of the protruding electrode 9b is pressed by the flat plate 10 as described above to form a flat surface on the tip of the protruding electrode 9b and at the same time the heights thereof are evenly aligned. is there.

Next, at least the electrode 6a is formed on the wiring board 6.
The ACF is formed so as to cover everything, and the alignment is performed so that the protruding electrode 9b provided on the electrode 1a of the semiconductor element 1 and the electrode 6a on the wiring board 6 face each other. Figure 8
(E) is the electrode 1a of the semiconductor element 1 as described above
It is a figure which shows the state which aligned the (protrusion electrode 9b) and the electrode 6a on the wiring board 6.

After alignment, the semiconductor element 1 and the wiring board 6
And are pressed in a heated state, and the protruding electrode 9b and the electrode 6a
Are electrically connected to each other, and heating is further continued to cure the thermosetting resin 2 and the ACF 11 respectively. At this time, since the tip end portion of the bump electrode 9b provided on the electrode 1a of the semiconductor element 1 has a flat surface and the heights of the bump electrodes 9b are aligned, the electrodes on the wiring substrate 6 are interposed via the ACF. A proper electrical connection is made with 6a. Figure 8
(F) shows the thermosetting resin 2 and the ACF 11 after electrically connecting the protruding electrode 9b and the electrode 6a as described above.
It is a figure which shows the state which each was hardened.

In this embodiment, since the thermosetting resin is used when the protruding electrodes are deformed by a flat plate, the protruding electrodes are prevented from being deformed in the lateral direction and short-circuiting occurs even if the distance between the protruding electrodes is small. It has the effect of not causing defects.

Ninth Embodiment FIG. 9 is a diagram showing a method of manufacturing a semiconductor device according to a ninth embodiment of the present invention, and the reference numerals in the figure are the same as those in FIG. 8 of the eighth embodiment, and therefore the description thereof will be omitted. In the eighth embodiment, the protruding electrode is formed on the electrode on the semiconductor element and the protruding electrode and the electrode on the wiring board are joined together. However, in the present embodiment, the protruding electrode is formed on the electrode on the wiring board. The bump electrodes are formed and the electrodes on the semiconductor element are bonded to each other.

In FIG. 9A, the thermosetting resin 2 is arranged on the wiring board 6, and the thermosetting resin 2 is attached to the tip of the metal wire 9.
It is a figure which shows the state which formed the metal ball 9a whose diameter is larger than the thickness of.

In FIG. 9B, the metal balls 9a are pressed against the electrodes 6a on the wiring board 6 while the wiring board 6 is heated.
FIG. 3 is a diagram showing a state in which the metal ball 9a and the electrode 6a are joined by applying an ultrasonic wave 5 to the capillary 4, and the viscosity of the thermosetting resin 2 is reduced, so that the resin 2 can be easily removed from the joined portion. Therefore, the wiring board 6 was heated.

In FIG. 9C, after the metal ball 9a and the electrode 6a are joined, the capillary 4 is pulled up to cut the metal wire 9 near the boundary between the metal ball 9a and the metal wire 9, and the protruding electrode 9b. In the figure showing the state in which the tips of the capillaries 4 are formed on the resin 2 at the time of forming the protruding electrodes by making the diameter of the metal balls 9a and the height of the protruding electrodes 9b at least larger than the thickness of the thermosetting resin 2. It is possible to prevent the resin 2 from adhering to the tip due to contact. As a result, it becomes possible to stably and continuously form the protruding electrodes 9b without hindering the formation of the metal balls 9a.

FIG. 9D shows that the tip of the protruding electrode 3c formed on the electrode 6a on the wiring board 6 is pressed by the flat plate 10 to form a flat surface on the tip of the protruding electrode 9b and at the same time make the height uniform. It is a figure which shows the aligned state.

FIG. 9E is a diagram showing a state in which the ACF is installed on the semiconductor element 1 so that at least all the electrodes 1a are covered, and the protruding electrodes 9b on the wiring substrate 6 and the electrodes 1a are aligned with each other.

In FIG. 9 (f), the semiconductor element 1 and the wiring board 6 are pressed in a heated state, the protruding electrodes 9b and the electrodes 1a are electrically connected, and further heating is continued to form a thermosetting resin. It is a figure which shows the state which hardened | cured 2 and ACF11, respectively, and was made into thermosetting type resin 2a and ACF11a. When deforming the protruding electrode 9b with the flat plate 10,
Since the thermosetting resin 2 is provided, the deformation of the protruding electrodes 9b in the lateral direction is prevented, and even if the distance between the protruding electrodes 9b is small, there is an effect that a short circuit defect does not occur.

The present embodiment is the same as the eighth embodiment except that the semiconductor element 1 and the wiring board 6 are replaced with each other. Therefore, the same steps as those described in the eighth embodiment are performed. a manner, FIG. 9 (a) ~ 9 and is bonded to the electrodes 1a of the semiconductor element 1 electrode 6a on the wiring board 6 performs the process shown in (f) (protruding electrodes).

In the fifth or sixth embodiment of the present invention,
If the thermosetting resin is cured in advance before the protruding electrode is deformed by the flat plate, the lateral deformation of the protruding electrode can be further reduced. For example,
When 160 protruding electrodes having a diameter of 70 μm and a height of 47 μm are formed on the semiconductor element 1 by using a gold wire of φ25 μm without providing a thermosetting resin, and the protruding electrodes are deformed by a flat plate with a load of 15 kg, A flat portion having a diameter of about 58 μm is formed at the tip of the electrode, the diameter is expanded to 83 μm and 13 μm, and the height is 35 μm.

On the other hand, as in the present embodiment, a thermosetting resin having a thickness of 30 μm is installed before forming the protruding electrodes,
When the projection electrode is heated at 120 ° C. for 3 minutes and hardened by about 30%, the projection electrode has a diameter of 77 μm and a height of 38 μ.
m, and when the thermosetting resin is heated at 250 ° C. for 7 minutes and completely cured by 100% reaction before forming the bump electrode, the diameter is 72 μm and the height is 39 μm. Can be prevented and short-circuit defects can be prevented.

In the first to seventh embodiments of the present invention, the thermosetting resin is liquid, but a semi-cured B stage film may be used. When the thermosetting resin is in the form of a resin film, it is easy to handle when it is placed on a semiconductor element or a wiring board, and the productivity is improved. In addition, since the film in the B-stage state has a characteristic that it temporarily becomes liquid when heated to a predetermined temperature, and further rapidly cures when heated to a higher temperature, the same effect as that of the liquid resin can be obtained. The curing completion time is about 5 seconds, which is shorter than that of liquid resin.
This has the effect of further improving productivity.

[0119]

The method of manufacturing a semiconductor device according to the present invention comprises a step of forming a thermosetting resin on the first electronic component including the electrodes of the first electronic component having a plurality of electrodes, A step of pressing an electrode member on the thermosetting resin to form a protruding electrode made of the electrode member on the electrode of the first electronic component so that a tip of the electrode member protrudes from the thermosetting resin; The first electronic component so that the protruding electrode formed on the electronic component and the electrode of the second electronic component face each other.
Wherein between the step of positioning the electronic component and the second electronic component, dissipate bonding the first said electronic component which is formed on the protrusion electrodes of the second electronic component electrode in a state of heated Since the step of curing the thermosetting resin is included, the gap between the first electronic component and the second electronic component is formed at the same time when the protruding electrode of the first electronic component and the electrode of the second electronic component are joined. Since the filling of the thermosetting resin into the
It is not necessary to inject a resin after the electronic component and the second electronic component are bonded to each other, and the productivity can be remarkably improved. Further, since the resin is formed before the joining, rather than being filled with the resin after the joining, air bubbles are not caught in the filled portion of the resin.

[0120]

[0121]

[0122]

[0123]

[0124]

[0125]

Also, while heating the first electronic component,
When the thermosetting resin is formed on the first electronic component,
It can lower the clay of thermosetting resin,
It becomes easy to remove the thermosetting resin.

[0127]

[0128]

[0129]

[0130]

[Brief description of drawings]

FIG. 1 is a diagram showing a method for manufacturing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a method for manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a diagram showing a method for manufacturing a semiconductor device according to a third embodiment of the present invention.

FIG. 4 is a diagram showing a method for manufacturing a semiconductor device according to a fourth embodiment of the present invention.

FIG. 5 is a diagram showing a method for manufacturing a semiconductor device according to a fifth embodiment of the present invention.

FIG. 6 is a diagram showing a method for manufacturing a semiconductor device according to a sixth embodiment of the present invention.

FIG. 7 is a diagram showing a method for manufacturing a semiconductor device according to a seventh embodiment of the present invention.

FIG. 8 is a diagram showing a method for manufacturing a semiconductor device according to an eighth embodiment of the present invention.

FIG. 9 is a diagram showing a method for manufacturing a semiconductor device according to a ninth embodiment of the present invention.

FIG. 10 is a diagram showing a conventional method for manufacturing a semiconductor device.

FIG. 11 is a diagram showing a problem in a conventional method of manufacturing a semiconductor device.

FIG. 12 is a diagram showing a conventional method for manufacturing a semiconductor device.

[Explanation of symbols]

1 Semiconductor Element 1a Electrode 2 Thermosetting Resin 2a Cured Thermosetting Resin 3 Metal Wire 3a Metal Ball 3b Projection Electrode 4 Capillary 5 Ultrasonic Vibration 6 Wiring Board 6a Wiring Board Electrode 7 Solder Material 8 Metal Wire 8a Metal Ball 8b Projection electrode 9 Metal wire 9a Metal ball 9b Projection electrode 10 Flat plate 11 ACF 11a Hardened ACF

─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Yoichi Kitamura 2-3-3 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Corporation (56) References JP-A-11-97467 (JP, A) JP-A-4 -345041 (JP, A) JP-A-9-172038 (JP, A) JP-A-9-181119 (JP, A) JP-A-9-8045 (JP, A) JP-A-5-315405 (JP, A) ) JP-A-9-252024 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/60

Claims (2)

(57) [Claims] 1. A step of forming a thermosetting resin on the first electronic component including the electrodes of a first electronic component having a plurality of electrodes, and pressing an electrode member on the thermosetting resin. A step of forming a protruding electrode made of the electrode member on the electrode of the first electronic component so that a tip of the protruding electrode protrudes from the thermosetting resin; and a protruding electrode formed on the first electronic component and as the second electronic component electrode are opposed, said a step of aligning the first electronic component and the second electronic component, which is formed on the first electronic component in a heated state projections And a step of bonding the electrode and the electrode of the second electronic component and curing the thermosetting resin. 2. The first electronic component is heated while heating the first electronic component.
The thermosetting resin is formed on the electronic components of
The method for manufacturing a semiconductor device according to claim 1, wherein