JP3078781B2 - Semiconductor device manufacturing method and semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device mounted on an electronic device.

[0002]

2. Description of the Related Art In recent years, the degree of integration of semiconductor elements has increased,
As the miniaturization of semiconductor devices and the narrower pitch of connection terminals have progressed,
For this reason, semiconductor devices using flip chip mounting technology have been actively developed. Hereinafter, an example of a semiconductor device using a conventional flip chip mounting technique will be described with reference to the drawings.

FIG. 12 is a sectional view of a main part of a semiconductor device using a conventional flip chip mounting technique. In FIG. 12, 101 is a semiconductor element, 102 is a wiring portion formed inside the semiconductor element, and 103 is a diffusion region formed inside the semiconductor element for forming an element. The region where the wiring portion is multilayered and the diffusion region for forming the element are referred to as a circuit forming element. Reference numeral 104 denotes an insulating film, and reference numeral 105 denotes an electrode. On the electrode 105, a protruding electrode 106 made of a conductive metal is formed. On the other hand, 107 is a circuit board, and 1
Reference numeral 08 denotes a substrate electrode (terminal electrode) formed on the circuit board 107. Further, reference numeral 109 denotes a conductive adhesive for making electrical connection, and 110 denotes an insulating resin called underfill resin for mechanical reinforcement.

A method for manufacturing a semiconductor device having the above-described structure will be described with reference to FIGS.

First, a projection electrode 106 is formed on an electrode 105 of a semiconductor element 101 on which a desired circuit forming element or the like is formed in a normal semiconductor process. The protruding electrode 106 is formed by first forming a metal protrusion using a wire bonding technique or the like, and then pressing against a flat plate 111 having flatness as shown in FIG. Deformation is performed by securing a height variation within an allowable range. This is because when the height variation of the protruding electrode 106 is large, the amount of the conductive adhesive 109 transferred to the protruding electrode lower than the surrounding area is significantly reduced, or the conductive adhesive 109 This is because defects such as failure to reach the substrate electrode 108 on the side of the circuit board 107 to which the connection 109 is made occur, which significantly impairs electrical connection.

On the other hand, a desired circuit pattern and terminal electrodes 108 are formed on a circuit board 107 made of an insulating material using a conductive metal material such as Au or Cu.

After the tip of the protruding electrode 105 formed as described above is immersed in a liquid conductive adhesive film having a uniform film thickness formed in advance, the conductive adhesive 109 is transferred to the protruding electrode 105 by lifting. Apply.

[0008] Thereafter, a predetermined terminal electrode 108 and the protruding electrode 1 are placed on the circuit board 107 via a conductive adhesive 109.
The semiconductor element 101 is arranged face-down so that the semiconductor element 101 can make electrical contact with the semiconductor element 101. Then, heat treatment is performed to cure the conductive adhesive 109. Finally, an underfill resin 110 having an insulating property such as liquid epoxy is provided between the semiconductor element 101 and the circuit board 107.
Is filled using capillary action. After the filling is completed, a heat treatment or the like is performed to cure the underfill resin 110, and flip-chip mounting is performed.

As described above, a semiconductor device using the flip-chip mounting technique has been manufactured.

[0010]

However, in the above-described manufacturing method, an external force during the process of forming the bump electrode may damage the circuit forming element located immediately below the bump electrode. For example, when suppressing the height of the protruding electrode 106 within a required range of height variation, the protruding electrode tip is pressed against a flat plate having flatness to cause deformation only by the load component, and the height is made uniform. However, if a circuit-forming element exists immediately below the element, the required function is often lost because the element is greatly damaged. Therefore, until recently, in spite of a strong need for a semiconductor element having a configuration in which an electrode terminal is formed immediately above a circuit-forming element, from the viewpoint of cost reduction and high performance of the semiconductor element,
It has been difficult to manufacture a semiconductor device having a flip-chip mounting configuration in which a semiconductor element having such a configuration is combined with a conductive adhesive.

SUMMARY OF THE INVENTION In view of the above problems, the present invention provides a semiconductor device in which a semiconductor element having the above-described structure is electrically connected to a projection electrode formed on an electrode of the semiconductor element via a conductive adhesive. It is an object of the present invention to provide a manufacturing method capable of easily manufacturing an apparatus with extremely high quality without losing necessary functions.

[0012]

Means for Solving the Problems To achieve the above object, the present invention has the following constitution.

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a protruding electrode made of a conductive metal material ;
Conducting a step of forming on the electrode of the semiconductor device having an electrode directly above, in the semiconductor device of the face-down type with the projecting electrodes, and terminal electrodes of the projection electrodes and the circuit substrate of a semiconductor device the method of manufacturing a semiconductor device including the step of electrically connecting via sexual adhesive, the step of forming the protruding electrodes is true of the circuit-forming elements
On the upper electrode, a step of attaching a projecting electrode using thermal energy or ultrasonic energy, and pressing the tip of the projecting electrode against a flat plate having flatness, heat energy or ultrasonic energy or And the step of softening and then deforming the protruding electrode to make the height uniform.

According to the present invention, since the projection electrode is attached by utilizing heat energy or ultrasonic energy and the height of the projection electrode is uniformized by using heat energy or ultrasonic energy, Damage to the circuit forming element immediately below the protruding electrode can be reduced. Therefore, in order to realize high functionality and low cost, the electrical connection of the semiconductor element having the electrode formed directly above the element for circuit formation is performed via the conductive adhesive and the protruding electrode formed on the electrode of the semiconductor element. It is possible to manufacture a semiconductor device using a flip-chip mounting configuration with extremely high quality and economical efficiency without losing necessary functions.

Further, in the method of manufacturing a semiconductor device according to the second aspect of the present invention, there is provided a semiconductor device having a two-stage protruding electrode made of a conductive metal material and a circuit forming element inside.
Forming on the electrode, the at face-down type of the semiconductor device having a two-stage protruding electrode and the two-stage protruding electrode and the circuit terminal electrodes on the substrate of the semiconductor element via a conductive adhesive Electrically connecting the semiconductor device, the step of forming the two-step protruding electrode includes the step of forming a conductive layer on the upper electrode of the circuit forming element.
Metal clumps with sticky organic material
After that, the metal mass is subjected to heat energy or ultrasonic energy.
And the electrodes and the
Form an alloy layer between the metal block and form the first-stage protruding electrode
Forming a conductive metal block having adhesiveness
Attached on the first-stage protruding electrode with an organic material
Later, the metal mass is converted to heat energy or ultrasonic energy.
Or the combined use of them to melt
Forming a second-stage protruding electrode on the electromotive electrode.
It is characterized by that . Alternatively, a conductive metal material
Having a two-stage projecting electrode made of
Forming on the electrode of the semiconductor element, and the two-step projection
The semiconductor device having electrodes is face-down type
And the two-stage protruding electrode of the semiconductor element and a terminal on a circuit board.
A step of electrically connecting the electrodes with a conductive adhesive.
In the method for manufacturing a semiconductor device including:
The step of forming a pole includes an electrode on the top of the circuit forming element.
Turn conductive metal blocks into organic materials with adhesive properties
And adhere another metal lump on the metal lump.
After attaching with an organic material having a property, these metals
Lump the heat energy or ultrasonic energy or these
And a step of fusing together.

According to the present invention having the above-described structure, 2
Since the attachment of the step- projecting electrode is performed by utilizing thermal energy or ultrasonic energy, damage to the circuit-forming element immediately below the two-step projecting electrode can be reduced. Therefore, in order to realize high functionality and low cost, the electrical connection of the semiconductor element having an electrode formed directly above the element for circuit formation,
A semiconductor device performed by a flip-chip mounting configuration performed through a two-step protruding electrode formed on an electrode of a semiconductor element and a conductive adhesive without losing necessary functions, is extremely high in quality,
And it becomes possible to manufacture it economically. The above configuration
Forming the two-step projection electrode after forming the two-step projection electrode
After pressing the tip of the electrode against a flat plate,
Energy or ultrasonic energy or a combination of these
To soften the protruding electrodes and then deform them to reduce the height
It is preferable to have a similar process. Such preferred
According to the configuration, the height of the two-step protruding electrode is further uniformed.
The reliability of the electrical connection with the terminal electrodes on the circuit board.
improves. In addition, the means for making the height uniform
-Or ultrasonic energy or a combination of these
The electrode is softened and deformed.
Reduce damage to underlying circuit-forming elements
Can be

Further, according to a third aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a protruding electrode made of a conductive metal material ;
Forming on the electrode of a semiconductor element having electrodes directly above the element, in the semiconductor device of the face-down type with the projecting electrodes, and terminal electrodes of the projection electrodes and the circuit substrate of a semiconductor device Electrically connecting via a conductive adhesive, the step of forming the protruding electrode, wherein the step of forming the protruding electrode has an arbitrary shape on an electrode directly above the circuit forming element Forming a projecting electrode, inserting the projecting electrode into a mold having a desired shape, applying heat energy to soften and deform the projecting electrode, and transforming the tip of the projecting electrode into a flat plate having flatness. After the pressing, the protruding electrode is softened and deformed by using heat energy or ultrasonic energy or a combination thereof to make the height uniform.

According to the present invention having the above-described structure, it is possible to form a projection electrode having a predetermined shape with extremely high shape accuracy by using a mold . In addition , since the projecting electrode is softened by the mold using thermal energy, an external force in the process of forming the projecting electrode can be suppressed. As described above, it is possible to reduce damage to the circuit forming element immediately below the protruding electrode. Therefore, in order to realize high functionality and low cost, the electrical connection of the semiconductor element having the electrode formed directly above the element for circuit formation is performed via the conductive adhesive and the protruding electrode formed on the electrode of the semiconductor element. It is possible to manufacture a semiconductor device using a flip-chip mounting configuration with extremely high quality and economical efficiency without losing necessary functions.

Further, in the method of manufacturing a semiconductor device according to the fourth aspect of the present invention, there is provided a method for manufacturing a semiconductor device, comprising: a protruding electrode made of a conductive metal material ;
Forming on the electrode of a semiconductor element having electrodes directly above the element, in the semiconductor device of the face-down type with the projecting electrodes, and terminal electrodes of the projection electrodes and the circuit substrate of a semiconductor device Electrically connecting via a conductive adhesive, the method of manufacturing a semiconductor device, wherein the formation of the protruding electrode is performed by electroplating deposition on the electrode directly above the circuit forming element. A step of attaching a protruding electrode utilizing technology, and pressing the tip of the protruding electrode against a flat plate having flatness, and then softening the protruding electrode using thermal energy or ultrasonic energy or a combination thereof. And a step of making the height uniform by deforming from the height.

According to the present invention, a projection electrode having a predetermined shape with extremely high shape accuracy can be formed by the electroplating deposition technique . Therefore , damage to the circuit forming element immediately below the protruding electrode can be reduced. Therefore, in order to realize high functionality and low cost, the electrical connection of the semiconductor element having the electrode formed directly above the element for circuit formation is performed via the conductive adhesive and the protruding electrode formed on the electrode of the semiconductor element. It is possible to manufacture a semiconductor device using a flip-chip mounting configuration with extremely high quality and economical efficiency without losing necessary functions.

Further, the third to fourth configurations, after the formation of the protruding electrodes, after pressed against the flat plate having a flatness of the tip portion of the protruding electrodes, thermal energy or ultrasonic energy or a combination of these To soften the protruding electrode
And then deforming to make the height uniform . Heel
According to this configuration , the height of the protruding electrodes is further uniformed, so that the reliability of electrical connection with the terminal electrodes of the circuit board is improved. In addition, since the height uniforming means is performed by softening and deforming the protruding electrode by using heat energy or ultrasonic energy or a combination thereof, damage to the circuit forming element existing under the protruding electrode is performed. Can be reduced.

[0022]

Embodiments of the present invention will be described below with reference to the accompanying drawings.

(First Embodiment) FIG. 1 is a cross-sectional view of a principal part showing a configuration of a semiconductor device for explaining a method of manufacturing a semiconductor device according to a first embodiment of the present invention. In FIG. 1, reference numeral 1 denotes a semiconductor element, 2 denotes a wiring portion formed inside the semiconductor element, and 3 denotes a diffusion region formed inside the semiconductor element for forming an element. The region where the wiring portion is multilayered and the diffusion region for forming the element are referred to as a circuit forming element. Reference numeral 4 denotes an insulating film, 5 denotes an electrode, and 6 denotes a projecting electrode formed on the electrode 5 and made of a conductive metal. on the other hand,
7 is a circuit board, and 8 is a terminal electrode formed on the circuit board 7. Further, 9 is a conductive adhesive for making electrical connection, and 10 is an underfill resin having an insulating property for mechanical reinforcement.

A method of manufacturing the semiconductor device having the above structure will be described with reference to FIGS.

First, the electrode 5 of the semiconductor element 1 on which a desired circuit forming element or the like is formed in a normal semiconductor process.
The protruding electrode 6 is formed thereon. The protruding electrode 6 is formed by a wire bonding technique, or after attaching a conductive metal lump to an electrode of a semiconductor element with an organic material having an adhesive property, and then applying heat or ultrasonic waves to the metal lump. Alternatively, it is formed by a method in which these are used together and melted to form and provide an alloy layer between the electrode 5 and the metal lump. The method of forming the protruding electrode 6 by the wire bonding technique is, specifically, a method in which a molten Au ball formed by spark discharge at the tip of the Au wire is brought into contact with the terminal electrode 8 by using an ultrasonic wave. This method refers to a method in which a compound is formed between the electrode 5 on the semiconductor element 1 side by applying heat and bonded, and then the Au wire is cut above the Au ball to complete the Au wire. As shown in FIG. 2, the formed protruding electrode 6 is applied with heat or ultrasonic wave or heat or ultrasonic waves after applying the tip of the protruding electrode 6 to a flat plate 11 having a flat surface in order to make the height uniform. In combination, the protruding electrodes are softened and then deformed to make the height uniform.

On the other hand, a desired circuit pattern and terminal electrodes 8 are formed on the circuit board 7 using a conductive metal material such as Au or Cu.

After the tip of the protruding electrode 6 formed as described above is immersed in a film of the liquid conductive adhesive 9 having a uniform film thickness formed in advance, the conductive adhesive 9 is pulled up to remove the protruding electrode 6.
Transfer and apply.

After that, the semiconductor element 1 is arranged face down on the circuit board 7 so that the predetermined terminal electrode 8 and the protruding electrode 6 are brought into contact with each other via the conductive adhesive 9 so that an electrical connection can be made. . Then, heat treatment is performed to cure the conductive adhesive 9. Finally, the semiconductor element 1 and the circuit board 7
During this, a liquid epoxy-based underfill resin 10 such as an epoxy resin is filled by utilizing a capillary phenomenon. After the filling is completed, a heat treatment or the like is performed to cure the underfill resin 10, and flip-chip mounting is performed.

As shown in the manufacturing method of the present embodiment, since heat energy or ultrasonic energy is used in the process of forming the bump electrode 6, damage to the circuit forming element immediately below the bump electrode is reduced. can do. Therefore, in order to realize high functionality and low cost, the electrical connection of the semiconductor element having the electrode formed directly above the element for circuit formation is performed via the conductive adhesive and the protruding electrode formed on the electrode of the semiconductor element. It is possible to manufacture a semiconductor device using a flip-chip mounting configuration with extremely high quality and economical efficiency without losing necessary functions.

The flip-chip type semiconductor device is
In either system, an insulating resin (underfill resin) is interposed in the gap between the semiconductor element and the circuit board, but contraction occurs when the insulating resin is cured. This contraction force is transmitted to the circuit forming element immediately below the connection layer via the connection layer. As a result, the function of this element is often lost. On the other hand, in the configuration of the present invention in which the conductive adhesive is used for the connection layer, the flexibility of the conductive adhesive exhibits a function as a stress relaxing action. Therefore, damage to the circuit forming element can be reduced, and this is more advantageous than other methods.

In the above description, the protrusion electrode 6
Is a method of forming with a wire bonding technique, or after attaching a conductive metal lump to an electrode of a semiconductor element with an adhesive organic material, the metal lump is subjected to heat or ultrasonic waves or a combination thereof. And melted to form an alloy layer between the electrode 5 and the metal lump. The present invention is not limited to this. For example, a method of forming by electroplating deposition may be used. Similar effects can be obtained.

(Second Embodiment) FIG. 3 is a cross-sectional view of a principal part showing a configuration of a semiconductor device for explaining a method of manufacturing a semiconductor device according to a second embodiment of the present invention. FIG.
In FIG. 6, the same members as those in FIG. 3 is different from FIG. 1 in that the projecting electrode 36 for transferring the liquid conductive adhesive 9 has a two-stage projecting electrode shape.

A method for manufacturing the semiconductor device configured as described above will be described with reference to FIG.

FIG. 4 is a schematic sectional view showing the step of forming the protruding electrodes in the method of manufacturing the semiconductor device according to the present embodiment in the order of steps.

In FIG. 4, first, as shown in FIG.
A metal block 32 is adhered to the electrode 5 formed on the semiconductor element 1 via a suitable organic material 31 having an adhesive property (for example, a flux material). Next, as shown in (b),
By utilizing heat or ultrasonic waves or a combination thereof, the metal block 32 is softened and melted, and then a compound (alloy layer) is formed between the metal block 32 and the metal of the electrode 5 and adhered thereto. This is the first-stage protruding electrode. Further, as shown in (c), a metal lump 32 is formed on the first-stage protruding electrode through a suitable organic material 31 having an adhesive property (for example, a flux material) by the same method as in (a). Glue. Next, as shown in (d), by using heat or ultrasonic waves or a combination thereof in the same manner as in (b),
After softening and melting the metal block 32, a second-stage protruding electrode is attached to the first-stage protruding electrode. As described above, the second-stage projection electrode is formed so as to overlap the first-stage projection electrode, thereby completing the two-stage projection-shaped projection electrode 36. Thereafter, if necessary, as shown in the first embodiment of the present invention, the tip of the bump electrode 36 was applied to the flat plate 11 having flatness so as to make the height uniform. Thereafter, the protruding electrode is softened and deformed by heat or ultrasonic waves or a combination thereof to make the height uniform (see FIG. 2). If necessary, the organic material 31 is removed by washing or the like.

In this embodiment, the projecting electrode 36 has a two-step projecting shape. This is because, as described in the manufacturing method of the first embodiment of the present invention, the projecting electrode 36
When the liquid conductive adhesive 9 is transferred to the substrate, the conductive adhesive 9 is applied only to the two-step protrusions (upper part) of the two-step protrusion shape, so that the conductive adhesive 9 drips and flows. Since there is no longer, the lateral spread of the conductive adhesive is suppressed, so that there is an effect that a short circuit between adjacent electrodes can be prevented. As a result, the distance between the electrodes can be reduced, so that a semiconductor device having extremely high-density connections can be manufactured with high quality and high yield.

As described above, according to the method for manufacturing a semiconductor device of the present embodiment, the two-step projection electrode 36 suitable for a flip-chip mounting type semiconductor device using the liquid conductive adhesive 9 is formed. Since it is formed by utilizing heat energy or ultrasonic energy, it is possible to reduce the damage to the circuit forming element immediately below the protruding electrode, and further, as compared with the first embodiment of the present invention. This has the effect that a high-performance semiconductor device having a high-density connection can be manufactured economically.

In the present embodiment, instead of the method of forming a protruding electrode having a two-stage protruding shape by fusing a metal lump having conductivity with an organic material having adhesiveness and then fusing the same, the present invention is not limited to the method of the present invention. The first-stage protruding electrode and the second-stage protruding electrode may be sequentially formed by using the wire bonding technique described in the first embodiment. In this case, the same effect as described above can be obtained.

Third Embodiment A bump electrode forming step in a method for manufacturing a semiconductor device according to a third embodiment of the present invention will be described with reference to FIG. 3 and 4 in FIG.
The same members as those described above are denoted by the same reference numerals and description thereof is omitted.

In FIG. 5, first, as shown in FIG.
A metal block 32a is adhered to the electrode 5 formed on the semiconductor element 1 via an appropriate organic material 31a having an adhesive property (for example, a flux material). Next, as shown in (b), another metal lump 32b is superimposed on the metal lump 32a and adhered via the appropriate adhesive organic material 31b. Thereafter, as shown in (c), heat or ultrasonic waves or a combination thereof is used to make the metal blocks 32 available.
After softening the a and 32b, a compound is formed and adhered to the metal of the electrode 5, and at the same time, the metal blocks 323, 3
2b are also attached to each other to complete the projection electrode 36 having a two-step projection shape. Thereafter, if necessary, as shown in the first embodiment of the present invention, the tip end of the projecting electrode 36 is placed on the flat plate 11 having flatness so as to make the height uniform. After the application, the protruding electrodes are softened and deformed using heat or ultrasonic waves or a combination thereof to make the height uniform (see FIG. 2). Also, if necessary, organic material 3
1 is removed by washing or the like.

In the present embodiment, the second embodiment of the present invention is described.
In addition to the effects described in the first embodiment, since the step of softening the metal block 32 by utilizing heat or ultrasonic waves or a combination thereof is only required once, the steps can be simplified. It has together.

(Fourth Embodiment) A bump electrode forming step in a method of manufacturing a semiconductor device according to a fourth embodiment of the present invention will be described with reference to FIG. 6, the same members as those in FIGS. 3 and 4 are denoted by the same reference numerals, and description thereof is omitted.

In FIG. 6, reference numerals 41 and 43 denote resist films, and reference numerals 42 and 44 denote bump electrodes.

First, as shown in FIG. 1A, a first-stage resist film 41 having desired electrodes 5 formed by photolithography is formed on the surface of the semiconductor element 1 and then shown in FIG. As shown, Au, Cu
The first-stage protruding electrode 42 is formed by depositing a conductive metal such as Next, as shown in (c), a second-stage resist film 4 having a small opening is formed on the first-stage protruding electrode 42.
3, and the second-stage protruding electrode 44 is formed by electroplating deposition. Thereafter, as shown in (d), the first-stage and second-stage resist films 41 and 43 are removed to complete the projection electrode 36 having a two-stage projection shape. Thereafter, if necessary, as described in the first embodiment of the present invention, the projecting electrode 36 is formed on a flat plate having flatness in order to make the height uniform. After applying the tip of 36, the protruding electrode is softened and deformed by heat or ultrasonic waves or a combination thereof to make the height uniform (see FIG. 2).

In the present embodiment, in addition to the above-described effect obtained by forming the projecting electrode into a two-step projecting shape, the projecting electrode 36
Since the formation position is defined by the photolithography technology, the accuracy is extremely high, so that the present invention has an effect that it can be applied to a semiconductor device that requires extremely high positional accuracy.

(Fifth Embodiment) A bump electrode forming step in a method of manufacturing a semiconductor device according to a fifth embodiment of the present invention will be described with reference to FIG. 7, the same members as those in FIGS. 3 and 4 are denoted by the same reference numerals, and description thereof will be omitted.

In FIG. 7, reference numeral 51 denotes a projection electrode having an arbitrary shape, and reference numeral 52 denotes a mold for forming a desired two-step projection shape.

In FIG. 7, first, as shown in FIG.
On the electrode 5 formed on the semiconductor element 1, a projecting electrode 51 having an arbitrary shape is formed. The method of forming the protruding electrode 51 is not particularly limited. For example, as described in the first embodiment of the present invention, a method of forming by a wire bonding technique, or a method of forming a conductive metal lump having adhesiveness. After the metal mass is deposited on the electrode of the semiconductor element with an organic material, the metal mass is melted by heat or ultrasonic waves or a combination thereof to form an alloy layer between the electrode 5 and the metal mass and provided. It can be formed by a method. By forming in this manner, damage to the circuit forming element immediately below the bump electrode can be reduced.
Next, as shown in (b), the projecting electrode 51 is inserted into a mold 52 for forming a desired two-step projecting shape. Thereafter, as shown in (c), the protruding electrode 51 is melted and softened by applying heat and deformed, and then the mold 52 is removed to obtain a desired two-step projection shape as shown in (d). The protruding electrode 36 is completed.

In this embodiment, since the shape of the protruding electrode 36 can be defined with extremely high precision by the mold 52, there is an effect that a protruding electrode having a desired two-step protruding shape with extremely high shape accuracy can be stably manufactured. Therefore, after forming the protruding electrodes, a step of pressing the protruding electrodes against a flat plate having flatness to make the height uniform is not essential. In addition, the protruding electrode is softened by the mold using thermal energy. As described above, damage to the circuit forming element immediately below the protruding electrode can be reduced.

In the above description, the protruding electrode 36 is formed by a method of forming by a wire bonding technique, or after a conductive metal lump is adhered to an electrode of a semiconductor element with an organic material having an adhesive property. The metal block is melted by heat, ultrasonic waves, or a combination thereof to form the electrode 5.
Although it is described that an alloy layer is formed and provided between the metal lump and the metal lump, the same effect can be obtained by using a method of forming the same by electrolytic plating deposition.

The shape of the formed protruding electrode is not limited to the two-step protruding shape, but can be changed to the one-step protruding shape by changing the mold 52. Also in this case, a desired protruding electrode having extremely high shape accuracy can be stably manufactured.

(Sixth Embodiment) FIG. 8 is a sectional view showing a main part of a semiconductor device according to a sixth embodiment of the present invention. FIG.
In FIG. 7, the same members as those in FIG. In FIG. 8, reference numeral 66 denotes a protruding electrode;
9 is a conductive adhesive. In the present embodiment, the protruding electrode 66 and the conductive adhesive 69 contain at least one kind of the same metal material.

The effect of the fact that the protruding electrode 66 and the conductive adhesive 69 contain the same metal material will be described with reference to FIG.

FIG. 9 is an enlarged sectional view of the connection portion A between the protruding electrode 66 and the conductive adhesive 69 in FIG.

The conductive adhesive 69 can be divided into a metal filler 60 for controlling conductivity and a resin 61 for controlling adhesion. The conductivity is developed by contact between the metal fillers 60. Therefore, the influence of the contact interface between the surfaces of the metal filler 60 is large. The same is true for the surface of the metal filler 60 in the conductive adhesive 69 and the protruding electrode 66.
The same can be said for the contact interface of the surface of the above. That is, the electrical connection between the conductive adhesive 69 and the protruding electrode 66 is developed by the contact between the surface of the metal filler 60 in the conductive adhesive 69 and the surface of the protruding electrode 66. Therefore, the projection electrode 66
Since at least one kind of the same metal material as the metal filler 60 in the conductive adhesive 69 is contained therein, the connection state at the same contact interface as that at the interface between the metal fillers 60 is also obtained. Can be expressed.

In the present embodiment, since the protruding electrode 66 and the conductive adhesive 69 contain at least one kind of the same metal material, they have an extremely stable connection resistance which is not affected by the connection interface. This has an effect that a semiconductor device having connection quality can be obtained.

(Seventh Embodiment) FIG. 10 is a sectional view showing a main part of a semiconductor device according to a seventh embodiment of the present invention. 10, the same members as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted. In FIG. 10, reference numeral 76 denotes a protruding electrode, and 79 denotes a conductive adhesive.

In the present embodiment, each of the protruding electrode 76 and the conductive adhesive 79 contains at least Ag as a metal material constituting them. Although Ag has a high ionization tendency, it has a drawback that a nonconductor may be formed by being easily eluted in a liquid containing impurity ions, but in the case of the configuration of the semiconductor device of this embodiment, the underfill resin Since elution of water near the connection portion is blocked by 10, there is very little occurrence of elution of Ag. Conversely, Ag has the advantages that it can form only an unstable oxide film even when heated, so that it hardly hinders the contact of the metal filler and has a low volume resistivity. Also, the Ag-based metal material is formed by electrolytic plating deposition, or after attaching the metal mass to the electrode of the semiconductor element with an organic material having adhesiveness, the metal mass is subjected to heat or ultrasonic waves or a combination thereof. And then melting and forming an alloy layer between the electrode 5 and the metal lump, the protruding electrode 76 having an arbitrary shape can be easily manufactured, and the conductive adhesive 79 containing Ag can be easily formed. Since the semiconductor device according to the sixth embodiment of the present invention can be easily manufactured, there is an effect that the semiconductor device having the structure described in the sixth embodiment of the present invention can be easily manufactured.

Therefore, according to the present embodiment, the configuration of the semiconductor device of the present invention makes it possible to achieve a higher performance with a more stable and very low electrical connection as compared with the sixth embodiment of the present invention. This has an effect that a simple semiconductor device can be easily manufactured.

(Eighth Embodiment) FIG. 11 is a sectional view showing a main part of a semiconductor device according to an eighth embodiment of the present invention. 11, the same members as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted. In FIG. 11, reference numeral 86 denotes a protruding electrode, and 89 denotes a conductive adhesive.

In this embodiment, the bump electrode 86 is made of Ag-
The metal filler containing the Sn-based high-temperature solder material and contained in the conductive adhesive 89 contains the Ag-based metal material.
With such a configuration, since the protruding electrode 86 is a solder material, it is melted and softened at a relatively low temperature compared to other metal materials, and thus has little effect on other constituent materials. Further, eutectic solder of Pb-Sn is usually used for electrical connection of other mounting members of the mounting module, but since the reflow temperature is slightly lower than the melting point of the Ag-Sn solder, the protruding electrode 86 may be deformed. And a stable connection form can be maintained. Therefore, for these reasons, the present embodiment provides, in addition to the effects described in the seventh embodiment,
In addition, there is an effect that a semiconductor device which can secure an extremely stable connection state with little influence on other components when a module configuration is formed can be manufactured.

The protrusion electrodes in the sixth to eighth embodiments are not particularly limited, and all the protrusion electrodes described in the first to fifth embodiments can be applied.

[0063]

As described above, according to the method of manufacturing a semiconductor device of the present invention, it is possible to reduce damage to the circuit forming element immediately below the bump electrode, thereby realizing high performance and low cost. A semiconductor device in which electrical connection of a semiconductor element having an electrode formed directly above a circuit forming element is performed by a flip-chip mounting configuration in which a protruding electrode formed on an electrode of the semiconductor element and a conductive adhesive are used. It is possible to manufacture the product with extremely high quality and economical efficiency without losing necessary functions.

[Brief description of the drawings]

FIG. 1 is a fragmentary cross-sectional view showing a schematic configuration of a semiconductor device for describing a method of manufacturing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a fragmentary cross-sectional view showing a schematic configuration of a semiconductor device for describing a method of manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view showing a step of forming a bump electrode in a method of manufacturing a semiconductor device according to a second embodiment of the present invention in the order of steps.

FIG. 5 is a schematic cross-sectional view showing a step of forming a protruding electrode in the order of steps in a method of manufacturing a semiconductor device according to a third embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view showing a step of forming a bump electrode in a method of manufacturing a semiconductor device according to a fourth embodiment of the present invention in the order of steps.

FIG. 7 is a schematic cross-sectional view showing a step of forming a bump electrode in a method of manufacturing a semiconductor device according to a fifth embodiment of the present invention in the order of steps.

FIG. 8 is a fragmentary cross-sectional view showing a schematic configuration of a semiconductor device for describing a method of manufacturing a semiconductor device according to a sixth embodiment of the present invention.

FIG. 9 shows a connection portion A between the protruding electrode and the conductive adhesive in FIG.
It is sectional drawing which expanded.

FIG. 10 is a fragmentary cross-sectional view showing a schematic configuration of a semiconductor device for describing a method of manufacturing a semiconductor device according to a seventh embodiment of the present invention.

FIG. 11 is a fragmentary cross-sectional view showing a schematic configuration of a semiconductor device for describing a method of manufacturing a semiconductor device according to an eighth embodiment of the present invention. FIG. 21 is a cross-sectional view of a main part of a semiconductor device for describing an eighth embodiment of the present invention.

FIG. 12 is a cross-sectional view of a main part showing a schematic configuration of an example of a semiconductor device using a conventional flip chip mounting technique.

FIG. 13 is a schematic cross-sectional view for explaining a conventional method for manufacturing a semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1, 101 Semiconductor element 2, 102 Wiring part 3, 103 Diffusion area 4, 104 Insulating film 5, 105 electrode 6, 36, 66, 76, 86, 106 Projection electrode 7, 107 Circuit board 8, 108 Terminal electrode (substrate electrode) 9, 69, 79, 89, 109 Conductive adhesive 10, 110 Underfill resin 11, 111 Flat plate 31, 31a, 31b Adhesive organic material 32, 32a, 32b Conductive metal soul 41, 43 Resist film 42 First-stage protruding electrode 44 Second-stage protruding electrode 51 Protruding electrode having arbitrary shape 52 Mold for forming desired two-stage protruding shape 60 Metal filler 61 Resin component

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-9-326420 (JP, A) JP-A-6-209028 (JP, A) JP-A-6-283537 (JP, A) JP-A 8- 321505 (JP, A) JP-A-4-196324 (JP, A) JP-A-4-356935 (JP, A) JP-A-9-246321 (JP, A) JP-A-7-88681 (JP, A) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 21/60 311 H01L 21/60

Claims (13)

(57) [Claims] 1. A circuit-forming element comprising: a protruding electrode made of a conductive metal material ;
Forming on the electrode of a semiconductor element having electrodes immediately above the child at the semiconductor device face down method having the protruding electrodes and the terminal electrodes of the projection electrodes and the circuit substrate of a semiconductor device Electrically connecting via a conductive adhesive, the method of manufacturing a semiconductor device, wherein the step of forming the protruding electrode, the circuit forming element of the
A step of attaching a protruding electrode using heat energy or ultrasonic energy on the electrode directly above , and pressing the tip of the protruding electrode against a flat plate having flatness, heat energy or ultrasonic energy or A process of softening and then deforming the protruding electrodes by using them together to make the height uniform. 2. The method according to claim 1, wherein the step of attaching the protruding electrode comprises attaching the conductive metal mass to the electrode of the semiconductor element with an organic material having an adhesive property, and then applying the thermal mass or ultrasonic energy to the metal mass. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the method is carried out by melting them together to form an alloy layer between the electrode and the metal lump. 3. A step of forming a two-step protruding electrode made of a conductive metal material on an electrode of a semiconductor element having a circuit-forming element therein; Electrically connecting the two-step projection electrode of the semiconductor element and the terminal electrode on the circuit board via a conductive adhesive by a face-down method. The step of forming an electrode, on the upper electrode of the circuit forming element, after attaching a conductive metal lump with an organic material having an adhesive, the metal lump is heat energy or ultrasonic energy or A step of forming an alloy layer between the electrode and the metal lump by melting them in combination to form a first-stage protruding electrode; and converting the conductive metal lump to an organic material having tackiness. The said After adhering on the protruding electrode of the stage, the metal mass is melted by heat energy or ultrasonic energy or a combination thereof to form a protruding electrode of the second stage on the protruding electrode of the first stage And a method of manufacturing a semiconductor device. 4. A step of forming a two-step protruding electrode made of a conductive metal material on an electrode of a semiconductor element having a circuit-forming element therein; Electrically connecting the two-step projection electrode of the semiconductor element and the terminal electrode on the circuit board via a conductive adhesive by a face-down method. In the step of forming an electrode, a metal lump having conductivity is attached to the upper electrode of the element for circuit formation with an organic material having adhesiveness, and another metal lump is further adhered on the metal lump. A method for manufacturing a semiconductor device, comprising a step of melting these metal lumps by applying heat energy or ultrasonic energy or a combination thereof after attaching the metal mass with an organic material. 5. After forming the two-step protruding electrode, the tip of the two-step protruding electrode is pressed against a flat plate having flatness, and the heat electrode or the ultrasonic energy or a combination thereof is used to form the protruding electrode. 5. The method of manufacturing a semiconductor device according to claim 3, further comprising the step of softening and then deforming to make the height uniform. 6. A circuit-forming element comprising: a projecting electrode made of a conductive metal material; and a circuit-forming element therein.
Forming on the electrode of a semiconductor element having electrodes immediately above the child at the semiconductor device face down method having the protruding electrodes and the terminal electrodes of the projection electrodes and the circuit substrate of a semiconductor device Electrically connecting via a conductive adhesive, the method of manufacturing a semiconductor device, wherein the step of forming the protruding electrode, the circuit forming element of the
Forming a protruding electrode having an arbitrary shape on the electrode directly above , inserting the protruding electrode into a mold having a desired shape, applying heat energy to soften and deform the protruding electrode, After pressing the tip of the protruding electrode against a flat plate having flatness, a step of softening and deforming the protruding electrode using thermal energy or ultrasonic energy or a combination thereof to make the height uniform. A method for manufacturing a semiconductor device, comprising: 7. The method according to claim 7, wherein the protruding electrode having an arbitrary shape attaches a conductive metal lump to the electrode of the semiconductor element with an organic material having an adhesive property, and then applies heat energy or ultrasonic waves to the metal lump. The method of manufacturing a semiconductor device according to claim 6, wherein the semiconductor device is formed by melting an energy or a combination thereof to form an alloy layer between the electrode and the metal lump. 8. The method of manufacturing a semiconductor device according to claim 6, wherein the mold has a shape that forms a two-step projection, and a projection electrode having a two-step projection is formed on the electrode. 9. A circuit forming element comprising: a protruding electrode made of a conductive metal material; and a circuit forming element therein.
Forming on the electrode of a semiconductor element having electrodes immediately above the child at the semiconductor device face down method having the protruding electrodes and the terminal electrodes of the projection electrodes and the circuit substrate of a semiconductor device Electrically connecting via a conductive adhesive, the method of manufacturing a semiconductor device, wherein the formation of the protruding electrode, on the electrode directly above the element for circuit formation, utilizing electroplating deposition technology After the step of attaching the protruding electrode, and pressing the tip of the protruding electrode against a flat plate having flatness, the protruding electrode is softened and deformed by using heat energy or ultrasonic energy or a combination thereof. And a step of making the height uniform. 10. The method of manufacturing a semiconductor device according to claim 9, wherein said projecting electrode has a two-stage projecting shape. 11. A projection electrode having the two-stage projection shape, after forming a first-stage projection electrode on the electrode of the semiconductor element by electroplating deposition, an electric current is formed on the first-stage projection electrode. The method of manufacturing a semiconductor device according to claim 10, wherein the projection electrode is formed by forming a second-stage protruding electrode by plating deposition. 12. The projection electrode having the two-step projection shape has a desired two-step projection shape after forming the projection electrode having an arbitrary shape by electroplating deposition on the electrode of the semiconductor element. The method of manufacturing a semiconductor device according to claim 10, wherein the semiconductor device is formed by inserting into a mold, applying heat energy to soften and deform. 13. A semiconductor device manufactured by the manufacturing method according to claim 1.