JP3473540B2 - 半導体レーザの冷却装置 - Google Patents

半導体レーザの冷却装置

Info

Publication number
JP3473540B2
JP3473540B2 JP2000045878A JP2000045878A JP3473540B2 JP 3473540 B2 JP3473540 B2 JP 3473540B2 JP 2000045878 A JP2000045878 A JP 2000045878A JP 2000045878 A JP2000045878 A JP 2000045878A JP 3473540 B2 JP3473540 B2 JP 3473540B2
Authority
JP
Japan
Prior art keywords
cooling
radiator
diameter
semiconductor laser
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000045878A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001237486A (ja
Inventor
和幸 三窪
栄 北城
正樹 常包
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2000045878A priority Critical patent/JP3473540B2/ja
Priority to DE2001108557 priority patent/DE10108557B4/de
Publication of JP2001237486A publication Critical patent/JP2001237486A/ja
Application granted granted Critical
Publication of JP3473540B2 publication Critical patent/JP3473540B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
JP2000045878A 2000-02-23 2000-02-23 半導体レーザの冷却装置 Expired - Fee Related JP3473540B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000045878A JP3473540B2 (ja) 2000-02-23 2000-02-23 半導体レーザの冷却装置
DE2001108557 DE10108557B4 (de) 2000-02-23 2001-02-22 Halbleiterlaser-Kühlvorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000045878A JP3473540B2 (ja) 2000-02-23 2000-02-23 半導体レーザの冷却装置

Publications (2)

Publication Number Publication Date
JP2001237486A JP2001237486A (ja) 2001-08-31
JP3473540B2 true JP3473540B2 (ja) 2003-12-08

Family

ID=18568399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000045878A Expired - Fee Related JP3473540B2 (ja) 2000-02-23 2000-02-23 半導体レーザの冷却装置

Country Status (2)

Country Link
JP (1) JP3473540B2 (de)
DE (1) DE10108557B4 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3830364B2 (ja) * 2001-07-24 2006-10-04 ファナック株式会社 固体レーザ励起用光源装置
JP2003051631A (ja) * 2001-08-06 2003-02-21 Nidek Co Ltd 熱交換器の製作方法及び該熱交換器を用いたレーザ装置
JP4228680B2 (ja) * 2002-12-12 2009-02-25 三菱電機株式会社 冷却部材
WO2005038998A1 (ja) * 2003-10-17 2005-04-28 Mitsubishi Denki Kabushiki Kaisha 固体レーザ発振器および固体レーザ加工装置
CN101162827B (zh) * 2006-10-13 2010-09-08 深圳市大族激光科技股份有限公司 一种对心注入式泵浦腔
KR20100040979A (ko) * 2007-09-14 2010-04-21 가부시키가이샤 아드반테스트 기판상의 전자부품을 냉각하기 위한 워터 재킷
JP5677795B2 (ja) * 2010-09-27 2015-02-25 パナソニック デバイスＳｕｎｘ株式会社 Ｌｅｄユニット
TWI404904B (zh) * 2010-11-19 2013-08-11 Inventec Corp 可拆式液態冷卻散熱模組
JP5764152B2 (ja) * 2013-02-13 2015-08-12 株式会社フジクラ 半導体レーザ装置
KR101607057B1 (ko) * 2015-04-24 2016-03-28 현대제철 주식회사 코일 냉각 장치
JP7269201B2 (ja) * 2020-08-07 2023-05-08 古河電気工業株式会社 発光装置、光源装置、および光ファイバレーザ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3739585C1 (en) * 1987-11-23 1989-05-11 Witzenmann Metallschlauchfab Cold plate for dissipating heat losses from large-scale-integrated electronic chips
FR2741208B1 (fr) * 1995-11-13 1997-12-05 Commissariat Energie Atomique Assemblage de barrettes de diodes laser refroidies
DE19606972A1 (de) * 1996-02-24 1997-08-28 Daimler Benz Ag Kühlkörper zum Kühlen von Leistungsbauelementen
JP3816194B2 (ja) * 1996-11-22 2006-08-30 ファナック株式会社 冷却装置、光源装置、面発光装置、およびその製造方法
JPH10294513A (ja) * 1997-02-19 1998-11-04 Toshiba Corp レーザダイオード励起固体レーザ装置

Also Published As

Publication number Publication date
DE10108557B4 (de) 2009-01-15
JP2001237486A (ja) 2001-08-31
DE10108557A1 (de) 2001-09-13

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