JP3354182B2 - 混成集積回路 - Google Patents

混成集積回路

Info

Publication number
JP3354182B2
JP3354182B2 JP28758592A JP28758592A JP3354182B2 JP 3354182 B2 JP3354182 B2 JP 3354182B2 JP 28758592 A JP28758592 A JP 28758592A JP 28758592 A JP28758592 A JP 28758592A JP 3354182 B2 JP3354182 B2 JP 3354182B2
Authority
JP
Japan
Prior art keywords
nickel plating
integrated circuit
plating film
hybrid integrated
copper foil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP28758592A
Other languages
English (en)
Other versions
JPH06140477A (ja
Inventor
俊道 成瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP28758592A priority Critical patent/JP3354182B2/ja
Publication of JPH06140477A publication Critical patent/JPH06140477A/ja
Application granted granted Critical
Publication of JP3354182B2 publication Critical patent/JP3354182B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/0555—Shape
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Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、混成集積回路に関し、
特にニッケルメッキ表面にリード線を接続する混成集積
回路に関する。
【０００２】
【従来の技術】従来、混成集積回路はセラミックスやガ
ラス基板上に抵抗体やトランジスターの如き回路部品を
付着したもの、あるいはアルミニウム基板上に絶縁層を
設け、この上に銅箔により回路を組み込む方式が一般的
である。これらの基板の上には、半田付けによる半導体
のダイボンディング、外部への端子接続、チップコンデ
ンサー等チップ部品の取付けがなされ、また半導体と銅
箔回路との接続はアルミニウム線による超音波ワイヤー
ボンディングによりなされている。
【０００３】アルミニウム線が接続される銅箔回路上に
は、アルミニウム線の超音波ボンディングを確実に行う
ためにニッケルメッキ膜が形成される。かかる技術とし
ては、特公昭５２−３４６１号公報に記載されている。
【０００４】
【発明が解決しようとする課題】従来の混成集積回路で
は、銅箔を回路として用いることから、その表面に残存
する耐触剤除去、半田とのぬれ性、Ａｇペーストとの密
着性および表面の酸化膜を除去するために製造工程中に
複数個の研摩工程が行われる。ニッケルメッキ膜を形成
する工程の前工程で銅箔表面上には約１〜５μｍ程度の
深さを有する溝が形成される。
【０００５】銅箔上にニッケル電解メッキを行うと、図
４に示す如く、ニッケルメッキ膜（１１）の結晶組織は
柱状（縦方向）に形成されるために、その表面は粗面構
造で且つ銅箔（１２）の溝（１２Ａ）と対応しニッケル
メッキ膜（１１）にも溝（１１Ａ）が形成される。かか
る、ニッケルメッキ膜（１１）上にアルミニウムリード
線（１３）を超音波ボンディングするとリード線（１
３）はニッケルメッキ膜（１１）上に接続されるもの
の、そのボンディング接続強度が極めて低下する不具合
が発生した。
【０００６】この理由は、超音波ボンディング装置のボ
ンディング・ツールから導出されたリード線（１３）を
ニッケルメッキ膜（１１）上に当接させた場合、リード
線（１３）がニッケルメッキ膜（１１）の溝（１１Ａ）
及びメッキ（１１）表面に形成された粗面部（１１Ｂ）
にくい込むことから摩擦抵抗が大きくなり、超音波振動
がニッケルメッキ膜（１１）とリード線（１３）との界
面に印加されず、例えばリード線（１３）の表面の酸化
膜を破ぶることなく接続されるためである。
【０００７】上述した不具合を解消するためには、銅箔
に形成される溝の深さを浅く形成するように行えばよい
が、基板と銅箔とを接着する樹脂層を介してプレスする
際に銅箔表面に上述した深さの溝等が形成されることか
ら現状の工程では解決することができないものである。
この発明は上述した課題に鑑みてなされたもので、この
発明の目的は、ニッケルメッキ膜とアルミニウムリード
線との接続強度を向上させ信頼性の優れた混成集積回路
を提供する事である。
【０００８】
【課題を解決するための手段】上述した課題を解決し、
目的を達成するため、この発明に係わる混成集積回路
は、金属基板上に絶縁層を介して銅箔により所望形状の
導電路が設けられ、その導電路と半導体素子がリード線
で接続された混成集積回路のリード線を結晶組織が層状
に形成されたニッケルメッキ表面に超音波ボンディング
接続したことを特徴としている。
【０００９】
【作用】以上の様に構成される混成集積回路において
は、結晶組織が層状に形成したニッケルメッキ膜上にリ
ード線を超音波接続することにより、ニッケルメッキ膜
表面が若干の凹凸を有して略平坦化されるために、超音
波ボンディング時におけるニッケルメッキ膜とリード線
の界面で発生する摩擦抵抗を最適値とすることが可能と
なる。その結果、ニッケルメッキ膜とリード線の接続強
度が保れた混成集積回路を得ることができる。
【００１０】
【実施例】以下に、図１〜図３に示した実施例に基づい
て本発明の混成集積回路を説明する。本発明の混成集積
回路は図１および図２に示す如く、金属基板（１）と、
この金属基板（１）上に絶縁樹脂層（２）を介して銅箔
より形成された導電路（３）と、この導電路（３）上に
固着される半導体素子（４）と、導電路（３）上に形成
されたニッケルメッキ膜（５）と、半導体素子（４）と
ニッケルメッキ膜（５）を接続するリード線（６）とか
ら構成される。
【００１１】金属基板（１）はアルミニウムが用いら
れ、その一主面上にエポキシ系の接着樹脂層を介して約
３５μｍ〜１０５μｍ厚の銅箔が熱プレス工程によって
貼着される。このプレス工程によって、銅箔表面には数
μｍの溝（３Ａ）が形成されることになる。尚、基板
（１）としてアルミニウムを用いた場合には、その表面
を陽極酸化法によってアルマイト膜を形成してもよい。
【００１２】基板（１）上に銅箔を貼着した後、ブラシ
等を用いてその表面が研摩され、銅箔表面に残存した耐
触剤およびその表面に形成された酸化膜が除去される。
この研摩工程により形成された溝（３Ａ）によって、後
述する半導体素子等の回路部品を固着する半田のぬれ性
が向上する。この際、銅箔表面には約１〜５μｍ程度の
溝（３Ａ）が形成される。研摩工程後の銅箔表面には電
解ニッケルメッキによって約１〜７μｍ程のニッケルメ
ッキ膜（５）が形成される。
【００１３】本発明の特徴とするところは、このニッケ
ルメッキ膜（５）の結晶組織の配列にある。即ち、ニッ
ケルメッキ膜（５）の結晶組織を層状組織に構成し、後
述するアルミニウムリード線（６）と接続させることで
ある。結晶組織を層状とするためにニッケルメッキ膜
（６）は電解有機光沢ニッケルメッキによって行われ
る。光沢ニッケルメッキは一般的にメッキ製品の耐蝕性
を向上させること、および美観性を向上させるために開
発されたメッキである。
【００１４】光沢メッキで結晶組織を完全な層状とする
ために、ニッケルメッキ浴に数ｇの１次および２次の２
種類の光沢剤が混入されている。１次光沢剤としてスル
ホンアミド、スルホンイミド、サッカリン等の有機物が
用いられ、２次光沢剤としてアセチレンおよびその誘導
体、アモチレンアルコール等の有機化合物が用いられ
る。
【００１５】１次光沢剤および２次光沢剤が混入された
メッキ浴で電解メッキされたニッケルメッキ膜（５）の
結晶組織は層状に形成され、図２に示す如く、銅箔の表
面に形成された溝（３Ａ）による凹凸による影響を受け
ることなく、略平坦に形成されることになる。実際に
は、ニッケルメッキ膜（５）の表面は略平坦でその平坦
面のところどころに銅箔に形成された溝（３Ａ）に対応
する領域（５Ａ）がくぼんで形成される。
【００１６】銅箔上にニッケルメッキ膜（５）を形成し
た後、その表面にレジスト膜を形成しエッチングして所
望形状の導電路（３）が形成される。尚、半導体素子
（４）、チップ抵抗等が固着される領域上のニッケルメ
ッキは選択的な除去される。導電路（３）上に半導体素
子（４）を固着し、その半導体素子（４）はニッケルメ
ッキ膜（５）が形成された導電路（３）と超音波ボンデ
ィングによりアルミニウムリード線（６）で接続され
る。
【００１７】本願発明者の実験によれば、図３に示す如
く、ニッケルメッキ膜（５）の結晶組織を層状にしリー
ド線（６）を超音波ボンディング接続した方が引張強度
でかなり優れていることが判る。図３を見ると、結晶組
織を層状としない従来構造のものでは、ほとんどのもの
がリード線とニッケルメッキ膜との界面で剥離したのに
対し、本願発明の如き、結晶組織を層状としたもので
は、リード線とメッキ膜での界面剥離はほとんどなく、
全てリード線のネック切であった。
【００１８】この理由は、ニッケルメッキ膜（５）の結
晶組織を層状としたことにより、メッキ膜表面が略平坦
状に形成され、かつ、適当なくぼみを有することから、
超音波ボンディング装置のボンディング・ツールから導
出されたリード線（６）をニッケルメッキ膜（５）上に
当接させた際、リード線（６）とニッケルメッキ膜
（５）の摩擦抵抗が超音波振動を印加するに最適の抵抗
となり超音波振動が確実にニッケルメッキ膜（５）とリ
ード線（６）との界面に印加され、リード線（６）の表
面の酸化膜を破ぶり、確実に超音波接続されるためであ
る。
【００１９】
【発明の効果】以上に詳述した如く、本発明の混成集積
回路によれば、結晶組織が層状に形成したニッケルメッ
キ膜上にリード線を超音波接続することにより、ニッケ
ルメッキ膜表面が若干の凹凸を有して略平坦化されるた
めに、超音波ボンディング時におけるニッケルメッキ膜
とリード線の界面で発生する摩擦抵抗を最適値とするこ
とが可能となる。その結果、超音波ボンディング時に確
実に超音波振動がリード線とニッケルメッキ膜の界面に
印加され、ニッケルメッキ膜とリード線を確実に超音波
接続でき接続強度の優れた信頼性の高い混成集積回路を
提供することができる。
【図面の簡単な説明】
【図１】本発明の混成集積回路を示す断面図である。
【図２】本発明のニッケルメッキ膜部分を示す要部拡大
断面図である。
【図３】ボンディング強度を示した特性図である。
【図４】従来型のニッケルメッキ膜部分を示す要部拡大
断面図である。
【符号の説明】
（１） 金属基板 （２） 絶縁樹脂層 （３） 導電路（銅箔） （４） 半導体素子 （５） ニッケルメッキ膜 （６） リード線

Claims (2)

    (57)【特許請求の範囲】
  1. 【請求項１】 銅箔により所望形状の導電路が設けら
    れ、前記導電路と電気的に接続される半導体素子がリー
    ド線で接続された混成集積回路において、 表面が約１〜５μｍの凹凸を有する前記導電路上に光沢
    メッキにより形成されたニッケルメッキ膜が形成され、
    前記リード線は、超音波ボンディングで前記ニッケルメ
    ッキ表面に接続されたことを特徴とする混成集積回路。
  2. 【請求項２】 金属基板上に絶縁層を介して銅箔により
    所望形状の導電路が設けられ、前記導電路と半導体素子
    がリード線で接続された混成集積回路において、 前記リード線は超音波ボンディングで且つ表面が約１〜
    ５μｍの凹凸を有する前記導電路上に結晶組織が層状と
    なるように形成されたニッケルメッキ表面に接続された
    ことを特徴とする混成集積回路。
JP28758592A 1992-10-26 1992-10-26 混成集積回路 Expired - Lifetime JP3354182B2 (ja)

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JP3354182B2 true JP3354182B2 (ja) 2002-12-09

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Publication number Priority date Publication date Assignee Title
JP5214936B2 (ja) * 2007-09-21 2013-06-19 富士電機株式会社 半導体装置
JP2011086717A (ja) * 2009-10-14 2011-04-28 Koito Mfg Co Ltd 回路装置及びその製造方法

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