JP3292961B2 - 位相反転マスク及びその製造方法 - Google Patents
位相反転マスク及びその製造方法Info
- Publication number
- JP3292961B2 JP3292961B2 JP32902392A JP32902392A JP3292961B2 JP 3292961 B2 JP3292961 B2 JP 3292961B2 JP 32902392 A JP32902392 A JP 32902392A JP 32902392 A JP32902392 A JP 32902392A JP 3292961 B2 JP3292961 B2 JP 3292961B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- phase inversion
- region
- light
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 24
- 229910052725 zinc Inorganic materials 0.000 claims description 24
- 239000011701 zinc Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- -1 oxygen ions Chemical class 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N nitrous oxide Inorganic materials [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 25
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 20
- 239000011651 chromium Substances 0.000 description 19
- 229910052804 chromium Inorganic materials 0.000 description 18
- 230000010363 phase shift Effects 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000010453 quartz Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20350/1991 | 1991-11-15 | ||
| KR1019910020350A KR930011099A (ko) | 1991-11-15 | 1991-11-15 | 위상 반전 마스크 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06130650A JPH06130650A (ja) | 1994-05-13 |
| JP3292961B2 true JP3292961B2 (ja) | 2002-06-17 |
Family
ID=19322893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32902392A Expired - Fee Related JP3292961B2 (ja) | 1991-11-15 | 1992-11-16 | 位相反転マスク及びその製造方法 |
Country Status (5)
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0636993A (ja) * | 1992-05-21 | 1994-02-10 | Canon Inc | 露光装置及び半導体素子の製造方法 |
| KR0151427B1 (ko) * | 1994-03-04 | 1999-02-18 | 문정환 | 위상 반전마스크 및 그의 제조방법 |
| TW270219B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1994-05-31 | 1996-02-11 | Advanced Micro Devices Inc | |
| KR0152952B1 (ko) * | 1995-05-13 | 1998-10-01 | 문정환 | 위상반전 마스크 및 그 제조방법 |
| KR100399444B1 (ko) * | 1995-06-30 | 2004-04-29 | 주식회사 하이닉스반도체 | 에지강조형위상반전마스크및그제조방법 |
| KR0167249B1 (ko) * | 1995-07-31 | 1999-01-15 | 문정환 | 위상반전마스크 제조방법 |
| KR0179164B1 (ko) * | 1995-09-25 | 1999-04-01 | 문정환 | 위상 반전 마스크의 제조방법 |
| KR100195333B1 (ko) * | 1996-09-02 | 1999-06-15 | 구본준 | 위상반전마스크 및 그 제조방법 |
| US5958630A (en) * | 1997-12-30 | 1999-09-28 | Kabushiki Kaisha Toshiba | Phase shifting mask and method of manufacturing the same |
| KR20000045026A (ko) * | 1998-12-30 | 2000-07-15 | 전주범 | 드럼식 세탁기의 배수방법 |
| KR100388320B1 (ko) * | 1999-06-22 | 2003-06-25 | 주식회사 하이닉스반도체 | 위상반전마스크 형성방법 |
| US6777137B2 (en) * | 2002-07-10 | 2004-08-17 | International Business Machines Corporation | EUVL mask structure and method of formation |
| JP2014116283A (ja) * | 2012-11-15 | 2014-06-26 | Sumitomo Heavy Ind Ltd | 有機ｅｌ素子の製造方法、及び有機ｅｌ素子 |
| CN115202146A (zh) * | 2021-04-14 | 2022-10-18 | 上海传芯半导体有限公司 | 移相掩膜版及其制作方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2710967B2 (ja) * | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
| JPH0359555A (ja) * | 1989-07-28 | 1991-03-14 | Fujitsu Ltd | 位相シフトマスク |
| JPH03123353A (ja) * | 1989-10-06 | 1991-05-27 | Oki Electric Ind Co Ltd | ホトマスク及びその作製方法 |
| JPH03172844A (ja) * | 1989-12-01 | 1991-07-26 | Oki Electric Ind Co Ltd | シフターパターン付き半導体マスクの作成方法 |
| JPH03211554A (ja) * | 1990-01-17 | 1991-09-17 | Fujitsu Ltd | 位相シフトマスクの製造方法 |
| JP2647232B2 (ja) * | 1990-04-25 | 1997-08-27 | 三菱電機株式会社 | 位相シフトマスク及びその製造方法 |
| JP2892765B2 (ja) * | 1990-04-27 | 1999-05-17 | 株式会社日立製作所 | パターン構造を有する素子の製造方法 |
| US5208125A (en) * | 1991-07-30 | 1993-05-04 | Micron Technology, Inc. | Phase shifting reticle fabrication using ion implantation |
-
1991
- 1991-11-15 KR KR1019910020350A patent/KR930011099A/ko not_active Ceased
-
1992
- 1992-11-06 TW TW081108884A patent/TW221721B/zh not_active IP Right Cessation
- 1992-11-13 US US07/976,020 patent/US5322749A/en not_active Expired - Lifetime
- 1992-11-13 DE DE4238441A patent/DE4238441C2/de not_active Expired - Fee Related
- 1992-11-16 JP JP32902392A patent/JP3292961B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR930011099A (ko) | 1993-06-23 |
| US5322749A (en) | 1994-06-21 |
| DE4238441A1 (en) | 1993-07-08 |
| TW221721B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1994-03-11 |
| DE4238441C2 (de) | 2003-09-25 |
| JPH06130650A (ja) | 1994-05-13 |
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