DE4238441C2 - Phasenschiebemaske und Verfahren zu deren Herstellung - Google Patents

Phasenschiebemaske und Verfahren zu deren Herstellung

Info

Publication number
DE4238441C2
DE4238441C2 DE4238441A DE4238441A DE4238441C2 DE 4238441 C2 DE4238441 C2 DE 4238441C2 DE 4238441 A DE4238441 A DE 4238441A DE 4238441 A DE4238441 A DE 4238441A DE 4238441 C2 DE4238441 C2 DE 4238441C2
Authority
DE
Germany
Prior art keywords
phase shift
mask
areas
layer
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4238441A
Other languages
German (de)
English (en)
Other versions
DE4238441A1 (en
Inventor
O Seok Han
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Goldstar Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldstar Electron Co Ltd filed Critical Goldstar Electron Co Ltd
Publication of DE4238441A1 publication Critical patent/DE4238441A1/de
Application granted granted Critical
Publication of DE4238441C2 publication Critical patent/DE4238441C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE4238441A 1991-11-15 1992-11-13 Phasenschiebemaske und Verfahren zu deren Herstellung Expired - Fee Related DE4238441C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910020350A KR930011099A (ko) 1991-11-15 1991-11-15 위상 반전 마스크 제조방법

Publications (2)

Publication Number Publication Date
DE4238441A1 DE4238441A1 (en) 1993-07-08
DE4238441C2 true DE4238441C2 (de) 2003-09-25

Family

ID=19322893

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4238441A Expired - Fee Related DE4238441C2 (de) 1991-11-15 1992-11-13 Phasenschiebemaske und Verfahren zu deren Herstellung

Country Status (5)

Country Link
US (1) US5322749A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP3292961B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR930011099A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE4238441C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW221721B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0636993A (ja) * 1992-05-21 1994-02-10 Canon Inc 露光装置及び半導体素子の製造方法
KR0151427B1 (ko) * 1994-03-04 1999-02-18 문정환 위상 반전마스크 및 그의 제조방법
TW270219B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1994-05-31 1996-02-11 Advanced Micro Devices Inc
KR0152952B1 (ko) * 1995-05-13 1998-10-01 문정환 위상반전 마스크 및 그 제조방법
KR100399444B1 (ko) * 1995-06-30 2004-04-29 주식회사 하이닉스반도체 에지강조형위상반전마스크및그제조방법
KR0167249B1 (ko) * 1995-07-31 1999-01-15 문정환 위상반전마스크 제조방법
KR0179164B1 (ko) * 1995-09-25 1999-04-01 문정환 위상 반전 마스크의 제조방법
KR100195333B1 (ko) * 1996-09-02 1999-06-15 구본준 위상반전마스크 및 그 제조방법
US5958630A (en) * 1997-12-30 1999-09-28 Kabushiki Kaisha Toshiba Phase shifting mask and method of manufacturing the same
KR20000045026A (ko) * 1998-12-30 2000-07-15 전주범 드럼식 세탁기의 배수방법
KR100388320B1 (ko) * 1999-06-22 2003-06-25 주식회사 하이닉스반도체 위상반전마스크 형성방법
US6777137B2 (en) * 2002-07-10 2004-08-17 International Business Machines Corporation EUVL mask structure and method of formation
JP2014116283A (ja) * 2012-11-15 2014-06-26 Sumitomo Heavy Ind Ltd 有機ｅｌ素子の製造方法、及び有機ｅｌ素子
CN115202146A (zh) * 2021-04-14 2022-10-18 上海传芯半导体有限公司 移相掩膜版及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0359555A (ja) * 1989-07-28 1991-03-14 Fujitsu Ltd 位相シフトマスク
JPH03123353A (ja) * 1989-10-06 1991-05-27 Oki Electric Ind Co Ltd ホトマスク及びその作製方法
JPH03172844A (ja) * 1989-12-01 1991-07-26 Oki Electric Ind Co Ltd シフターパターン付き半導体マスクの作成方法
JPH03211554A (ja) * 1990-01-17 1991-09-17 Fujitsu Ltd 位相シフトマスクの製造方法
DE4113968A1 (de) * 1990-04-27 1991-10-31 Hitachi Ltd Maskenstruktur und verfahren zur herstellung von halbleiterbauelementen unter verwendung der maskenstruktur

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
JP2647232B2 (ja) * 1990-04-25 1997-08-27 三菱電機株式会社 位相シフトマスク及びその製造方法
US5208125A (en) * 1991-07-30 1993-05-04 Micron Technology, Inc. Phase shifting reticle fabrication using ion implantation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0359555A (ja) * 1989-07-28 1991-03-14 Fujitsu Ltd 位相シフトマスク
JPH03123353A (ja) * 1989-10-06 1991-05-27 Oki Electric Ind Co Ltd ホトマスク及びその作製方法
JPH03172844A (ja) * 1989-12-01 1991-07-26 Oki Electric Ind Co Ltd シフターパターン付き半導体マスクの作成方法
JPH03211554A (ja) * 1990-01-17 1991-09-17 Fujitsu Ltd 位相シフトマスクの製造方法
DE4113968A1 (de) * 1990-04-27 1991-10-31 Hitachi Ltd Maskenstruktur und verfahren zur herstellung von halbleiterbauelementen unter verwendung der maskenstruktur

Also Published As

Publication number Publication date
KR930011099A (ko) 1993-06-23
US5322749A (en) 1994-06-21
DE4238441A1 (en) 1993-07-08
TW221721B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-03-11
JP3292961B2 (ja) 2002-06-17
JPH06130650A (ja) 1994-05-13

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
8304 Grant after examination procedure
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20110601

Effective date: 20110531