JP3246010B2 - Electrode structure of flip-chip mounting substrate - Google Patents

Electrode structure of flip-chip mounting substrate

Info

Publication number
JP3246010B2
JP3246010B2 JP32234992A JP32234992A JP3246010B2 JP 3246010 B2 JP3246010 B2 JP 3246010B2 JP 32234992 A JP32234992 A JP 32234992A JP 32234992 A JP32234992 A JP 32234992A JP 3246010 B2 JP3246010 B2 JP 3246010B2
Authority
JP
Japan
Prior art keywords
land
substrate
flip
chip mounting
mounting substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP32234992A
Other languages
Japanese (ja)
Other versions
JPH06151506A (en
Inventor
夏也 石川
有貴子 加藤
敏行 長野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP32234992A priority Critical patent/JP3246010B2/en
Publication of JPH06151506A publication Critical patent/JPH06151506A/en
Application granted granted Critical
Publication of JP3246010B2 publication Critical patent/JP3246010B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16237Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area disposed in a recess of the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81191Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81192Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81193Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/8238Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/82385Shape, e.g. interlocking features
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、フリップチップ実装用
基板の電極構造に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode structure of a flip-chip mounting substrate.

【0002】[0002]

【従来の技術】一般に、フリップチップ実装において
は、半導体チップ上にバンプを形成し、これをフェイス
ダウンで配線基板導体と接続する。配線基板上、つまり
フリップチップ実装用の基板上には半導体チップのバン
プに対応して電極パッドが設けられており、これらを突
き合わせた状態で熱圧着あるいは加熱溶着により基板上
に半導体チップを実装していた。
2. Description of the Related Art In general, in flip-chip mounting, bumps are formed on a semiconductor chip and are connected face-down to a wiring board conductor. Electrode pads are provided on the wiring board, that is, on the flip-chip mounting board, corresponding to the bumps of the semiconductor chip, and the semiconductor chip is mounted on the board by thermocompression bonding or heat welding with these butted against each other. I was

【0003】図6は従来例を説明するための図であり、
図において、1はフリップチップ実装用基板(以下、単
に基板と称す)、2は基板1上に設けられた電極パッ
ド、3は半導体チップ、4は半導体チップ3上に形成さ
れたバンプである。基板1に設けられた電極パッド2
は、基板1の回路パターン上に設けられたランド5と、
このランド5上にメッキ処理等で被着されたハンダ層6
から成る。
FIG. 6 is a diagram for explaining a conventional example.
In the drawing, reference numeral 1 denotes a flip-chip mounting substrate (hereinafter, simply referred to as a substrate), 2 denotes an electrode pad provided on the substrate 1, 3 denotes a semiconductor chip, and 4 denotes a bump formed on the semiconductor chip 3. Electrode pad 2 provided on substrate 1
Is a land 5 provided on the circuit pattern of the substrate 1,
A solder layer 6 applied on the land 5 by plating or the like.
Consists of

【0004】基板1上にフェースダウンで半導体チップ
3を実装する場合は、まず図示のように電極パッド2に
バンプ4を位置合わせして載せ、この状態から熱圧着等
の手段により両者を接合して基板1と半導体チップ3を
電気的に接続する。
When the semiconductor chip 3 is mounted face down on the substrate 1, the bumps 4 are first positioned on the electrode pads 2 as shown in the figure, and the two are joined together by means such as thermocompression bonding. To electrically connect the substrate 1 and the semiconductor chip 3.

【0005】[0005]

【発明が解決しようとする課題】しかしながら従来にお
いては、基板1のランド5にハンダ層6を被着させた
際、ハンダ層6の中央部分が盛り上がった状態となるた
め、この上からバンプ6を載せると両者間で位置ずれを
起こしやすく、正確な位置決めが難しいといった問題が
あった。また、上記位置ずれが起こると電極パッド2と
バンプ4の接合部が小さくなるため、接合強度が規定以
上に得られず不良となったり、ハンダ付けの信頼性が著
しく損なわれるなどの問題もあった。
However, in the prior art, when the solder layer 6 is adhered to the land 5 of the substrate 1, the central portion of the solder layer 6 is in a raised state. When they are mounted, there is a problem that positional deviation easily occurs between the two, and accurate positioning is difficult. In addition, when the above-mentioned displacement occurs, the bonding portion between the electrode pad 2 and the bump 4 becomes small, so that there is a problem that the bonding strength cannot be obtained more than a specified value, resulting in a failure, and the reliability of soldering is significantly impaired. Was.

【0006】本発明は、上記問題を解決するためになさ
れたもので、基板上の電極パッドに対して半導体チップ
上のバンプを正確且つ容易に位置決めすることができる
フリップチップ実装用基板の電極構造を提供することを
目的とする。
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an electrode structure of a flip-chip mounting substrate capable of accurately and easily positioning a bump on a semiconductor chip with respect to an electrode pad on the substrate. The purpose is to provide.

【0007】[0007]

【課題を解決するための手段】本発明は、上記目的を達
成するためになされたもので、フリップチップ実装用基
板上に設けられたランドと、このランド上に被着された
ハンダ層とからなる電極パッドの構造において、ランド
の上面に、平面視略十字形に形成された所定深さの凹部
有するフリップチップ実装用基板の電極構造である。
SUMMARY OF THE INVENTION The present invention has been made to achieve the above-mentioned object, and comprises a land provided on a flip-chip mounting substrate and a solder layer adhered on the land. This is an electrode structure of a flip-chip mounting substrate having a concave portion of a predetermined depth formed in a substantially cross shape in a plan view on an upper surface of a land in an electrode pad structure.

【0008】[0008]

【作用】本発明のフリップチップ実装用基板の電極構造
においては、ランドの上面に、平面視略十字形に形成さ
れた所定深さの凹部を有する構成とすることで、このラ
ンド上に被着されるハンダ層もランドの表面形状に沿っ
て形成される。これにより、半導体チップを実装する際
には、バンプと電極パッドの位置ずれが抑制され、両者
間の位置決めが正確且つ容易に行えるようになる。
According to the electrode structure of the flip-chip mounting substrate of the present invention, a substantially cross-shaped planar view is formed on the top surface of the land.
With the configuration having the concave portion having the predetermined depth, the solder layer adhered on the land is also formed along the surface shape of the land. As a result , when mounting a semiconductor chip
In this case, the displacement between the bump and the electrode pad is suppressed, and the positioning between the two can be performed accurately and easily.

【0009】[0009]

【実施例】以下、本発明の実施例について図面を参照し
ながら詳細に説明する。図1は本発明に係わるフリップ
チップ実装用基板の電極構造の一実施例を説明するため
の図であり、図において、1は基板(フリップチップ実
装用基板)、2は基板1上に設けられた電極パッド、3
は半導体チップ、4は半導体チップ3上に形成されたバ
ンプである。基板1に設けられた電極パッド2は、基板
1の回路パターン上に設けられたランド5と、このラン
ド5上にメッキ処理等で被着されたハンダ層6から成
る。
Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a view for explaining an embodiment of an electrode structure of a flip-chip mounting substrate according to the present invention. In the drawing, 1 is a substrate (flip-chip mounting substrate), and 2 is provided on a substrate 1. Electrode pad, 3
Denotes a semiconductor chip, and 4 denotes a bump formed on the semiconductor chip 3. The electrode pad 2 provided on the substrate 1 includes a land 5 provided on a circuit pattern of the substrate 1 and a solder layer 6 applied on the land 5 by plating or the like.

【0010】本実施例の電極構造においては、基板1上
に設けられたランド5の上面に所定深さの凹部7が設け
られている。ランド5の上面に凹部7を設ける手段とし
ては、例えば基板1上に設けられたランド5に対して、
先端に丸みをつけた突起物をプレス金型等を用いて圧接
し、これによりランド7の上面に例えば図2(a)に示
すような凹部7を形成する方法や、基板1上に設けられ
たランド5上にフォトレジストをパターニングし、これ
にエッチング処理を施して例えば図2(b)に示すよう
な凹部7を形成する方法がある。
In the electrode structure of this embodiment, a concave portion 7 having a predetermined depth is provided on the upper surface of a land 5 provided on the substrate 1. As means for providing the concave portion 7 on the upper surface of the land 5, for example, for the land 5 provided on the substrate 1,
A protrusion having a rounded tip is pressed into contact with a press die or the like, thereby forming a recess 7 on the upper surface of the land 7 as shown in FIG. There is a method of forming a concave portion 7 as shown in FIG.

【0011】また、上記以外の手段としては、図3に示
すような方法も考えられる。すなわち、図3(a)に示
すように、まず基板1上にベースとなる銅製のランド5
aを設ける。次いで、図3(b)に示すように、ランド
5a上にレジスト8をパターニングする。続いて、図3
(c)に示すように、無電解メッキにより銅製のランド
5bを積層する。次に、図3(d)に示すように、先程
パターニングしたレジスト8を除去する。これによりラ
ンド5の上面に凹部7が設けられる。
As a means other than the above, a method as shown in FIG. 3 can be considered. That is, as shown in FIG. 3A, first, a copper land 5 serving as a base is formed on a substrate 1.
a is provided. Next, as shown in FIG. 3B, a resist 8 is patterned on the land 5a. Subsequently, FIG.
As shown in (c), copper lands 5b are laminated by electroless plating. Next, as shown in FIG. 3D, the resist 8 patterned previously is removed. Thereby, the concave portion 7 is provided on the upper surface of the land 5.

【0012】ここで、ランド5の実施態様としては、例
えば図4(a)に示すようにランド5上面を部分的に凹
ませて凹部7を形成したものから、図4(b)に示すよ
うに凹部7を長溝状に形成したもの、さらには図4
(c)に示すように凹部7を平面視略十字形に形成した
ものなど、種々の態様が考えられる。
Here, as an embodiment of the land 5, for example, as shown in FIG. 4A, the upper surface of the land 5 is partially recessed to form the concave portion 7, and then as shown in FIG. In which a concave portion 7 is formed in a long groove shape, and FIG.
Various modes are conceivable, such as the one in which the concave portion 7 is formed in a substantially cross shape in a plan view as shown in FIG.

【0013】こうした種々の手段でランド5の上面に所
定深さの凹部7を設けることにより、その後のハンダプ
リコートやハンダメッキ処理等においては、ランド5に
対してハンダ層6が、その中央部分で盛り上がることな
くランド5の表面形状に沿って被着される。すなわち、
図1、図3(e)に示すように、ランド5上に凹部7が
設けられている場合は、これに被着されるハンダ層6の
上面にも上記凹部7の深さに対応した凹みが形成され
る。
By providing the concave portion 7 having a predetermined depth on the upper surface of the land 5 by such various means, in the subsequent solder precoating, solder plating, or the like, the solder layer 6 is applied to the land 5 at the central portion thereof. It is applied along the surface shape of the land 5 without rising. That is,
As shown in FIGS. 1 and 3E, when the recess 7 is provided on the land 5, the upper surface of the solder layer 6 attached to the land 5 also has a recess corresponding to the depth of the recess 7. Is formed.

【0014】このような電極構造をなす基板1に対して
半導体チップ3を実装する場合は、図1、図3(f)に
示すように、半導体チップ3上のバンプ4が基板1上の
電極部分に形成された凹みに嵌まり込み、これにより基
板1上の電極パッド2に対して半導体チップ3上のバン
プ4が正確に位置決めされる。
When the semiconductor chip 3 is mounted on the substrate 1 having such an electrode structure, as shown in FIG. 1 and FIG. The bumps 4 on the semiconductor chip 3 are accurately positioned with respect to the electrode pads 2 on the substrate 1 by fitting into the recesses formed in the portions.

【0015】ここで、ランド5上面からの凹部7の深さ
としては、ランド5上にハンダ層6を被着させた際にハ
ンダ層6の中央部分が少なくとも盛り上がらない程度、
つまりハンダ層6の中央部分が平坦になるか幾分凹むよ
うに、ランド5の大きさやハンダ層6の厚みなどを調整
して適宜設定するのがよい。ちなみに、位置合わせの容
易性や正確性を考慮すると、後者の方、すなわちハンダ
層6に凹みが形成されている方が、凹みにバンプ4が嵌
り込む為より正確に位置決めがなされて好適である。
Here, the depth of the concave portion 7 from the upper surface of the land 5 is such that the central portion of the solder layer 6 does not rise at least when the solder layer 6 is deposited on the land 5.
That is, the size of the land 5 and the thickness of the solder layer 6 are preferably adjusted and set appropriately so that the central portion of the solder layer 6 becomes flat or slightly concave. By the way, in consideration of the ease and accuracy of the alignment, the latter, that is, the one in which the solder layer 6 has a recess, is more preferable because the bump 4 is fitted into the recess, so that the positioning is more accurately performed. .

【0016】続いて、本発明の電極構造に係わる他の実
施例について図5を参照しながら説明する。なお、本例
では上記実施例と同様の部材に対して同じ符号を付して
説明する。図において、1は基板(フリップチップ実装
用基板)、2は電極パッド、3は半導体チップ、4はバ
ンプである。本例においては、半導体チップ1の個々の
バンプ4に対応して基板1上に設けられたランド5が複
数に分割されており、この分割されたランド5間に所定
深さの凹部7が設けられている。さらに、分割された各
ランド5上にはそれぞれハンダ層6が被着され、これに
より各々のバンプ4に対応する電極パッド2が構成され
ている。
Next, another embodiment according to the electrode structure of the present invention will be described with reference to FIG. In this embodiment, the same members as those in the above embodiment are denoted by the same reference numerals and described. In the figure, 1 is a substrate (flip chip mounting substrate), 2 is an electrode pad, 3 is a semiconductor chip, and 4 is a bump. In this example, the lands 5 provided on the substrate 1 corresponding to the individual bumps 4 of the semiconductor chip 1 are divided into a plurality of portions, and a concave portion 7 having a predetermined depth is provided between the divided lands 5. Have been. Further, a solder layer 6 is applied on each of the divided lands 5, whereby the electrode pads 2 corresponding to the respective bumps 4 are formed.

【0017】このような電極構造をなす基板1に対して
半導体チップ3を実装する場合も、上述した実施例と同
様に、半導体チップ3上のバンプ4が基板1上の電極部
分に形成された凹部7に嵌まり込み、これにより基板1
上の電極パッド2に対して半導体チップ3上のバンプ4
が正確に位置決めされる。
When the semiconductor chip 3 is mounted on the substrate 1 having such an electrode structure, the bumps 4 on the semiconductor chip 3 are formed on the electrode portions on the substrate 1 as in the above-described embodiment. The substrate 1 fits into the recess 7,
Bump 4 on semiconductor chip 3 with respect to upper electrode pad 2
Are accurately positioned.

【0018】[0018]

【発明の効果】以上、説明したように本発明によれば、
基板上に設けられた電極パッドに対して半導体チップ上
のバンプを正確且つ容易に位置決めすることが可能とな
る。これにより、電極パッドとバンプの接合強度は常に
規定以上に得られるようになり、電極パッドとバンプの
位置ずれに伴う接合不良の発生が低減されるとともに、
フリップチップ実装におけるハンダ付けの信頼性向上が
図られる。
As described above, according to the present invention,
The bumps on the semiconductor chip can be accurately and easily positioned with respect to the electrode pads provided on the substrate. As a result, the bonding strength between the electrode pad and the bump can always be obtained higher than the specified value, and the occurrence of bonding failure due to the displacement of the electrode pad and the bump is reduced.
The reliability of soldering in flip chip mounting is improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係わるフリップチップ実装用基板の電
極構造の一実施例を説明するための図である。
FIG. 1 is a diagram for explaining an embodiment of an electrode structure of a flip-chip mounting substrate according to the present invention.

【図2】実施例におけるランドの形成方法を説明するた
めの図である。
FIG. 2 is a view for explaining a method of forming a land in an embodiment.

【図3】実施例におけるランドの他の形成方法を説明す
るための図である。
FIG. 3 is a view for explaining another method of forming a land in the embodiment.

【図4】実施例におけるランドの実施態様を説明する図
である。
FIG. 4 is a view for explaining an embodiment of a land in the embodiment.

【図5】本発明に係わるフリップチップ実装用基板の電
極構造の他の実施例を説明するための図である。
FIG. 5 is a view for explaining another embodiment of the electrode structure of the flip-chip mounting substrate according to the present invention.

【図6】従来例を説明するための図である。FIG. 6 is a diagram for explaining a conventional example.

【符号の説明】[Explanation of symbols]

1 基板(フリップチップ実装用基板) 2 電極パッド 3 半導体チップ 4 バンプ 5 ランド 6 ハンダ層 7 凹部 Reference Signs List 1 substrate (flip chip mounting substrate) 2 electrode pad 3 semiconductor chip 4 bump 5 land 6 solder layer 7 recess

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平5−21523(JP,A) 特開 昭49−83860(JP,A) 特開 昭63−56922(JP,A) 特開 平3−218036(JP,A) 特開 平5−235061(JP,A) 実開 昭58−168136(JP,U) (58)調査した分野(Int.Cl.7,DB名) H01L 21/60 311 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-5-21523 (JP, A) JP-A-49-83860 (JP, A) JP-A-63-56922 (JP, A) 218036 (JP, A) JP-A-5-250661 (JP, A) JP-A-58-168136 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/60 311

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 フリップチップ実装用基板上に設けられ
たランドと、前記ランド上に被着されたハンダ層とから
なる電極パッドの構造において、 前記ランドの上面に、平面視略十字形に形成された所定
深さの凹部を有することを特徴とするフリップチップ実
装用基板の電極構造。
1. A structure of an electrode pad comprising a land provided on a flip-chip mounting substrate and a solder layer adhered on the land, wherein the electrode pad is formed on the upper surface of the land in a substantially cross shape in plan view. An electrode structure for a flip-chip mounting substrate, characterized in that the electrode structure has a recessed portion having a predetermined depth.
JP32234992A 1992-11-06 1992-11-06 Electrode structure of flip-chip mounting substrate Expired - Fee Related JP3246010B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32234992A JP3246010B2 (en) 1992-11-06 1992-11-06 Electrode structure of flip-chip mounting substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32234992A JP3246010B2 (en) 1992-11-06 1992-11-06 Electrode structure of flip-chip mounting substrate

Publications (2)

Publication Number Publication Date
JPH06151506A JPH06151506A (en) 1994-05-31
JP3246010B2 true JP3246010B2 (en) 2002-01-15

Family

ID=18142654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32234992A Expired - Fee Related JP3246010B2 (en) 1992-11-06 1992-11-06 Electrode structure of flip-chip mounting substrate

Country Status (1)

Country Link
JP (1) JP3246010B2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3209977B2 (en) * 1999-04-02 2001-09-17 沖電気工業株式会社 Semiconductor module
KR20020058205A (en) * 2000-12-29 2002-07-12 마이클 디. 오브라이언 Circuit board and semiconductor package using it
JP4520052B2 (en) * 2001-01-17 2010-08-04 パナソニック株式会社 Semiconductor device and manufacturing method thereof
KR100429134B1 (en) * 2001-06-28 2004-04-28 동부전자 주식회사 Ball leveling apparatus for attaching ball of a ball grid array package
JP4573657B2 (en) * 2005-01-27 2010-11-04 パナソニック株式会社 Semiconductor device and manufacturing method thereof
JP2006310477A (en) * 2005-04-27 2006-11-09 Akita Denshi Systems:Kk Semiconductor device and manufacturing method therefor
JP4697600B2 (en) * 2006-06-01 2011-06-08 Tdk株式会社 Manufacturing method of composite wiring board
JP5187714B2 (en) * 2006-07-11 2013-04-24 独立行政法人産業技術総合研究所 Semiconductor chip electrode connection structure
JP4814196B2 (en) * 2007-10-15 2011-11-16 富士通株式会社 Circuit board
JP4986072B2 (en) * 2008-03-26 2012-07-25 日立化成工業株式会社 Manufacturing method of chip mounting substrate
JP5585155B2 (en) * 2010-03-26 2014-09-10 富士通株式会社 Manufacturing method of circuit board for mounting semiconductor element

Also Published As

Publication number Publication date
JPH06151506A (en) 1994-05-31

Similar Documents

Publication Publication Date Title
US6420664B1 (en) Metal foil having bumps, circuit substrate having the metal foil, and semiconductor device having the circuit substrate
US5367435A (en) Electronic package structure and method of making same
JP2000138313A (en) Semiconductor device and its manufacture
JP2011524647A (en) Edge stacking at wafer level
JP3246010B2 (en) Electrode structure of flip-chip mounting substrate
JP2001156203A (en) Printed wiring board for mounting semiconductor chip
JPS61274333A (en) Semiconductor device
US6323434B1 (en) Circuit board and production method thereof
JP2003243455A (en) Tape, method of manufacturing the same, semiconductor device, method of manufacturing the same
JPH03101142A (en) Manufacture of semiconductor device
JPH0547836A (en) Mounting structure of semiconductor device
JPH03129745A (en) Mounting of semiconductor device
JP2961839B2 (en) Integrated circuit device
JPH0410635A (en) Flip chip package mounting
JP2001035997A (en) Semiconductor device and manufacture therefor
JP2685900B2 (en) Film carrier
US6433415B2 (en) Assembly of plurality of semiconductor devices
JP3389712B2 (en) IC chip bump forming method
JP3275647B2 (en) Semiconductor device, its manufacturing method and its mounting structure
KR100206861B1 (en) Structure of high-density semiconductor package
JPH0281446A (en) Chip carrier board
JP2000299399A (en) Semiconductor device
JP2806816B2 (en) Bonding apparatus and bonding method using the same
JPH08316605A (en) Mounting method of ball grid array
JPH11317424A (en) Method and structure for mounting semiconductor device

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071102

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081102

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091102

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees