JP2685900B2 - Film carrier - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to a film carrier used for TAB, which is commonly referred to as area TAB.

(Prior Art) As shown in FIGS. 4 and 5, the area TAB (AREA-TAB) has a circuit pattern 14 for external connection formed on one side of a heat-resistant carrier film 12 such as polyimide. On the other surface side of the carrier film 12, an internal circuit pattern 18 which is electrically connected to the circuit pattern 14 via a through hole plating layer 16 is formed, and a semiconductor element 20 is connected to the internal circuit pattern 18 via a bump 26. In this way, in the area TAB, the internal circuit pattern 18 can be formed so as to be overlapped with the circuit pattern 14 for external connection, so that it is possible to freely design a complicated circuit pattern, especially for the semiconductor element 20. The internal circuit pattern 18 can be designed according to the position of the connection electrode, and the circuit layout of the semiconductor element 20 can be performed without being restricted by the connection pin position on the TAB side. This has the advantage that the degree of freedom of arrangement is increased and higher integration is possible.

(Problems to be Solved by the Invention) However, the conventional area ATB has the following problems.

That is, the bumps 26 for joining the semiconductor elements 20 usually have a thickness of only about several tens of μm, and the semiconductor elements 20 are mounted on the carrier film 12 almost in contact with each other. There is a problem that it is difficult to confirm the bonding state of the parts, for example, the meniscus shape of the bump 26 made of a gold-silicon eutectic alloy from the outside and the reliability is poor.

Therefore, according to the present invention, it is possible to easily confirm the bonding state between the semiconductor element and the internal circuit pattern from the outside, and to improve the reliability of the TA.
It is intended to provide a film carrier used for B or the like.

(Means for Solving the Problems) In the film carrier according to the present invention according to the above object,
In a film carrier in which circuit patterns are formed on both sides of the carrier film so as to be electrically connected to each other, and a semiconductor element is mounted via bumps on the circuit pattern on one side of the carrier film, in the vicinity of a portion to which the semiconductor element is bonded. Is characterized in that through holes are provided in the carrier film.

(Operation) In the film carrier according to the present invention, since the through holes are provided on the carrier film in the vicinity of the bonding portion of the semiconductor element, even if the semiconductor element is mounted in a state of being almost in contact with the carrier film, the semiconductor element is not exposed through the through holes. The quality of the joined state of can be visually confirmed, and a highly reliable film carrier can be provided.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a partial plan view of the TBA film carrier 10, and FIG. 2 is a partial sectional view.

A circuit pattern 14 for external connection is formed on one side of a heat-resistant carrier film 12 such as polyimide, and a through-hole plating film 16 is formed on the other side of the carrier film 12.
The point that an internal circuit pattern 18 that is electrically connected to the circuit pattern 14 via the through hole is formed is the same as the conventional one.

A feature of this embodiment is that the through holes 22 are formed on the carrier film 12 in the vicinity of the tip of the internal circuit pattern 18 at the portion where the semiconductor element 20 is bonded.

In order to form the TAB film carrier 10, first, the through hole 22 and other necessary through holes in the carrier film 12 are punched out, and then a copper foil is bonded onto the carrier film with an adhesive. The circuit pattern 14 and the internal circuit pattern 18 are formed by performing a required etching process, or a copper layer is formed on the carrier film 12 by vapor deposition or sputtering, and the copper layer is processed by etching to form the circuit pattern 14 and the internal circuit. After forming the pattern 18, the through holes 22 and the like may be formed by etching the carrier film 12.

The through-hole plating film 16 is usually formed by electroless plating or the like.

Since the semiconductor element 20 is configured as described above, the semiconductor element 20 can be mounted on the tip portion of the internal circuit pattern 18 by being bonded thereto by the bump 26 formed on the semiconductor element 20.

The bump 26 may be formed in advance on the tip side of the internal circuit pattern 18.

Since the through hole 22 is formed on the carrier film 12 in the vicinity of the joint between the tip of the semiconductor element 20 and the internal circuit pattern 18, the side opposite to the side where the semiconductor element 20 is joined after the semiconductor element is joined. From the through hole 22, it is possible to confirm the quality of the bonding state of the bonding portion, for example, the meniscus shape of the bump 26 made of a gold-silicon eutectic alloy.

 FIG. 3 shows another embodiment.

In this embodiment, the carrier film 12 is once passed through the through-hole plating film 16 from the circuit pattern 14 for external connection.
After raising the circuit pattern to the other surface side, the circuit is lowered to the circuit pattern 14 side via the via 28. Solder alloy 30 is put in this via 28 and bumps are placed on the circuit pattern 14 side.
Forming 26.

Therefore, in this embodiment, the semiconductor element 20 can be mounted on the circuit pattern 14 side.

Also in this embodiment, the through holes 22 may be formed on the carrier film 12 in the vicinity of the junction with the semiconductor element 20.

As described above, the present invention has been described in various ways with reference to preferred embodiments. However, the present invention is not limited to these embodiments.
Of course, many modifications can be made without departing from the spirit of the invention.

(Effect of the invention) As described above, according to the film carrier of the present invention, since the through holes are provided on the carrier film in the vicinity of the bonding portion of the semiconductor element, the carrier film is almost in contact with the carrier film. Even when mounted on top,
The quality of the bonded state of the semiconductor element can be visually confirmed through the through hole, and a highly reliable film carrier can be provided.

[Brief description of the drawings]

FIG. 1 is a partial plan view showing an example of a film carrier according to the present invention, FIG. 2 is a partial sectional view thereof, and FIG. 3 is a partial sectional view showing another embodiment. FIG. 4 is a plan view of a conventional TAB film carrier, and FIG.
The figure shows a partial sectional view thereof. 10 …… TAB film carrier, 12 …… Carrier film, 14 …… Circuit pattern, 18 …… Internal circuit pattern, 20
...... Semiconductor element, 22 …… Through hole, 26 …… Bump.

Claims (1)

(57) [Claims] 1. A film carrier in which circuit patterns are formed on both sides of a carrier film so as to be electrically connected to each other, and a semiconductor element is mounted on the circuit pattern on one side of the carrier film via bumps. A film carrier characterized in that a through hole is provided in a carrier film in the vicinity of a portion to be filled.