JP2806816B2 - Bonding apparatus and bonding method using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a bonding apparatus and a bonding method using the same.

[0002]

2. Description of the Related Art FIGS. 8A and 8B show a film carrier type semiconductor device based on a TAB method, wherein FIG. 8A is a plan view and FIG. 8B is a sectional view.

As shown in FIGS. 8A and 8B, a film carrier tape used for mounting in a TAB system has sprocket holes 107 formed on an insulating base film 101 made of polyimide or the like for use in transport and positioning. Then, after forming a square device hole 103 which is an opening for receiving the semiconductor chip 104, a metal foil such as a copper foil is bonded to the surface of the base film 101, and the metal foil is formed by photolithography. To form a required pattern, and a large number of leads 102 and test pads 108 for electrical selection are formed.

The lead 102 has an inner lead 102A projecting into the device hole 103 and a test pad 1
08 is connected to the outer lead 102B, and the surface of the outer lead 102B is plated with metal such as gold, tin, or solder.

The base film 101 immediately below the outer leads 102B is provided with several rectangular outer lead holes 109, and a lead 10 is provided between the outer lead holes 09 and the device holes 103.
2 are connected to the main body of the base film 101 at four corners.

When bonding the leads 102 of the film carrier tape and the semiconductor chip 104 configured as described above, bumps 105 which are metal projections are provided on the surface electrodes of the semiconductor chip 104 in advance.
Inner lead 102A bonded onto bump 105
The bumps 105 of the semiconductor chip 104 are located immediately below the inner leads 10.
2A and the bump 105 are bonded. Such a bonding method is called inner lead bonding (hereinafter, simply abbreviated as “ILB”).

[0007] The semiconductor chip 104 has a main surface having a rectangular plane, and is provided with a large number of bumps 105, which are metal projections, along each side. There are also electrodes. The inner lead 102A facing each bump 105 is provided with a suspender 1 for each side.
10 and are fixed to the main body of the base film 101 as outer leads 102B .

After the ILB, the electrical screening is performed using the test pad 108, and thereafter, the base film 101 and the like are removed together with the test pad 108. The number of bumps 105 on each side is larger than that shown in the figure, and some leads 102 may be missing and arranged.

In the above-mentioned ILB method, generally, the inner lead 102A and the bump 105 are collectively joined by a bonding tool (gang bonding method).
And a method of connecting the inner lead 102A and the bump 105 one by one (single point bonding method). In the former method, the semiconductor chip 1
When the dimensions of the semiconductor chip 104 are increased and the number of leads 102 is increased, it becomes difficult to maintain the parallelism between the bonding tool and the semiconductor chip 104. Further, each time the size of the semiconductor chip 104 changes in order to adjust the parallelism, a long time setting is required, and the versatility required for high-mix low-volume production is poor. On the other hand, according to the latter method, since the inner leads 102A are securely connected one by one with a bonding tool, fine adjustment as in the former is not required, and the opportunity to be adopted as the size of the semiconductor chip 104 increases is increased. ing.

FIG. 9 is a perspective view showing a single-point bonding method for inner leads. FIG. 10 is a cross-sectional view showing a bonding portion of a lead.
9A is a cross-sectional view of the bonding state in FIG. 9 as viewed from the inside of the semiconductor chip, and FIG. 9B is a cross-sectional view of the bonding state in a side orthogonal to the side where bonding is performed in FIG. FIG.

In the single point bonding method, the inner leads 102A are bonded one by one by a single point bonding tool 111 as shown in FIGS.

In this case, the bonding tool 111
There are shapes as shown in FIGS.

FIG. 11 is a view showing the shape of a bonding tool used in the single point bonding method, and FIG. 12 is an enlarged view of the tip of the bonding tool shown in FIG.

As shown in these figures, the single-point bonding tool 111 has one tip at the tip.

In order to mount the film carrier type semiconductor device manufactured by performing the ILB on a circuit board or the like, an outer lead bonding (Outer Lead bonding) for connecting the outer lead 102B and an electrode of a circuit board (not shown).
Bonding (hereinafter simply abbreviated as “OLB”) is performed, but in this case as well as the ILB, a single point bonding method may be employed.

[0016]

However, in the above-described single-point bonding method, the inner leads 102 are formed by the bonding tool 111 shown in FIG.
Since A is bonded one by one, when the number of leads 102 increases, the bonding operation time becomes long, and there is a problem that advantages of low production efficiency and excellent versatility cannot be utilized.

In view of the above-mentioned problems of the prior art, the present invention provides a method of connecting a film carrier tape to a semiconductor chip or mounting a film carrier type semiconductor device having a semiconductor chip mounted on a film carrier tape on a circuit board or the like. It is an object of the present invention to provide a bonding apparatus and a bonding method using the single-point bonding method that can improve productivity while utilizing a bonding method excellent in versatility.

[0018]

SUMMARY OF THE INVENTION In order to achieve the above object, the present invention is directed to a method of connecting a surface electrode of a semiconductor chip to an inner lead of a film carrier tape, or an outer lead of a film carrier tape after inner lead bonding and a circuit board. In a single-point type bonding apparatus for bonding one electrode at a time with a single bonding tool, a plurality of leads can be bonded at a time to the tip of the one bonding tool that is in contact with the lead. A plurality of protrusions are provided.

In this case, the plurality of protrusions may be provided corresponding to the lead pitch, or two protrusions may be provided at intervals of a natural number multiple of the lead pitch.

Further, using the above bonding apparatus,
A method of bonding a plurality of adjacent leads at a time, a method of bonding a plurality of leads at a time over one or adjacent leads, or the number of leads to be actually bonded to the number of leads that can be bonded at one time Even if the above condition is not satisfied, in this case, a method of performing bonding by changing the ultrasonic vibration and the load applied to the bonding tool necessary for bonding is also included in the present invention.

[0021]

In the present invention configured as described above, the surface electrode of the semiconductor chip and the inner lead of the film carrier tape, or the outer lead of the film carrier tape after the inner lead bonding and the electrode of the circuit board are connected to each other. When bonding with a point type bonding apparatus, a plurality of leads are bonded at one time because the tip of the bonding tool on the side in contact with the leads has a plurality of protrusions.

[0022]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a perspective view showing a bonding method using the bonding apparatus of the present invention, and FIG. 2 is a sectional view showing a state of bonding of the inner leads in the first embodiment of the bonding method shown in FIG. is there. However, in the drawings, the same reference numerals are given to portions that are the same as those of the related art.

As shown in FIGS. 1A and 1B, the bonding apparatus of this embodiment protrudes into a device hole 103 of a lead 102 formed on a base film 101 in advance, as in the prior art. Inner lead 102
A bump 105 of the semiconductor chip 104 can be positioned directly below A, and has a bonding tool (hereinafter simply abbreviated as “tool”) 100 for bonding the inner lead 102A to the bump 105. I have.

As shown in FIG. 2, the tip of the tool 100 on the side in contact with the inner lead 102A is connected to the two adjacent inner leads 102A at one time.
05 and two projections 100
A.

By using the tool 100, two inner leads 102A can be bonded at a time, while the conventional single point bonding has bonded the inner leads 102A one by one.

In this embodiment, as shown in FIGS. 2A and 2B, the bonded inner leads 102A
Inner lead 102 on the side of a semiconductor chip having
A two adjacent inner leads 102A are sequentially bonded to A while moving the tool 100. Similarly, the inner lead 102A on the opposite side
Are also bonded two by two.

The tool 100 used in this case will be described.

FIG. 3 is a view showing the shape of a bonding tool which is a characteristic part of the bonding apparatus of the present invention, and FIG.
3 is an enlarged view of a portion A at the tip of the bonding tool shown in FIG.

As shown in FIGS. 3 and 4, the tip of the tool 100 has two protrusions 100A that can bond adjacent leads at one time. This is the same as the interval between the inner leads 102A. The protrusion 100A
Is not limited to two and may be two or more.

At present, the adjacent inner lead 102
The interval of A becomes closer as the semiconductor chip becomes smaller,
μm. Therefore, the tool tip protrusion 10
In some cases, it is difficult to machine the distance between 0A with the inner lead interval.

FIGS. 5 to 7 are cross-sectional views showing the state of bonding according to another embodiment of the bonding method using the bonding apparatus of the present invention.

As described above, when it is difficult to machine the distance between the tool tip protrusions 100A at the intervals between the inner leads, as shown in FIG.
The bonding of the tool 100A having the protrusion 100A is performed by bonding one inner lead or a plurality of adjacent inner leads instead of bonding at a time.
The processing of the tip of is easy. Of course, the interval between the protrusions 100A and the protrusion height B shown in FIG. 4 need to be changed according to this bonding method.

On the other hand, as shown in FIG. 1B and FIG. 6, one of the tool projections 100A has one inner lead 102A on the side that intersects the side to be bonded two by two. Is bonded to the inner lead 102A. In this case, a plurality of inner leads 102
By lowering the load applied to the tool 100 and the set value of the ultrasonic vibration when bonding A, it is possible to achieve the same bonding as when bonding a plurality of inner leads 102A at once. When this bonding method is used, even when a plurality of inner leads 102A are on a side where bonding can be performed at one time as shown in FIG. Accordingly, it is possible to perform optimal bonding to the inner lead 102A that does not satisfy the number of leads that can be bonded at one time.

In this embodiment, the case of the ILB has been described. However, a plurality of outer leads 102B can be similarly bonded in the OLB using one tool 100.

As described above, in this embodiment, a single-point bonding apparatus is provided with a bonding tool having a plurality of projections so that a plurality of leads can be bonded at a time to bond with a bump on the surface of a semiconductor chip. The productivity can be improved by utilizing the single point bonding method which is excellent in versatility.

As an example of a specific effect, the same number of inner leads 102A are provided on the four sides of the semiconductor chip 104, respectively.
Are arranged in a line at the same interval, and the inner leads 102A on the two sides facing each other, which is the bonding method shown in FIG.
When two wires are bonded at a time at 00 and the inner leads 102A on the remaining two sides are bonded one by one with the protrusion 100A on one side of the bonding tool 100, compared with the conventional single point bonding method,
All the inner leads 102A could be bonded with 75% of the number of bonding operations of the conventional method.

[0038]

As described above, the present invention relates to a single-point type bonding apparatus having a bonding tool having a plurality of projections so that a plurality of leads can be bonded at one time to a tip portion on a contact side, and to a single-point type bonding apparatus. By using the bonding method used, there is an effect that the bonding operation time is shortened, the production efficiency is improved, and the versatility is excellent.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a bonding method using a bonding apparatus of the present invention.

FIG. 2 is a sectional view showing a state of bonding of inner leads in the first embodiment of the bonding method shown in FIG. 1;

FIG. 3 is a view showing a shape of a bonding tool which is a characteristic part of the bonding apparatus of the present invention.

FIG. 4 is an enlarged view of the tip of the bonding tool shown in FIG. 3;

FIG. 5 is a sectional view showing a state of bonding according to another embodiment of the bonding method using the bonding apparatus of the present invention.

FIG. 6 is a sectional view showing a state of bonding according to another embodiment of the bonding method using the bonding apparatus of the present invention.

FIG. 7 is a sectional view showing a state of bonding according to another embodiment of the bonding method using the bonding apparatus of the present invention.

8A and 8B show a film carrier type semiconductor device using a TAB method, wherein FIG. 8A is a plan view and FIG. 8B is a cross-sectional view.

FIG. 9 is a perspective view showing a single-point bonding method for inner leads.

10A and 10B are cross-sectional views showing a bonding portion of a lead, wherein FIG. 10A is a cross-sectional view of the bonding state of FIG. 9 as viewed from the inside of the semiconductor chip, and FIG. FIG. 4 is a cross-sectional view of a state of bonding on a side orthogonal to the side as viewed from the inside of the semiconductor chip.

FIG. 11 is a diagram showing a shape of a bonding tool used for a single point bonding method.

FIG. 12 is an enlarged view of the tip of the bonding tool shown in FIG. 11;

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 Bonding tool 100A Projection 101 Base film 102 Lead 102A Inner lead 102B Outer lead 103 Device hole 104 Semiconductor chip 105 Bump

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 21/60 H01L 21/607

Claims (6)

(57) [Claims] 1. A and a surface electrode and the film carrier tape of the inner lead of the semiconductor chip, or bonded to each single point by inner lead of the film carrier tape after bonding the outer leads and the circuit board electrode and the one of the bonding tool A single-point bonding apparatus, wherein a plurality of projections are provided at a tip portion of the one bonding tool on a side in contact with the leads so that a plurality of leads can be bonded at one time. 2. The bonding apparatus according to claim 1, wherein the plurality of protrusions are provided corresponding to a lead pitch. 3. The bonding apparatus according to claim 1, wherein two protrusions are provided at intervals of a natural number multiple of a lead pitch. 4. A bonding method comprising: bonding a plurality of adjacent leads at a time using the bonding apparatus according to claim 1. 5. A bonding method, wherein a plurality of leads are bonded at one time over one or adjacent leads by using the bonding apparatus according to claim 1. 6. A bonding method using the bonding apparatus according to claim 1, wherein even if the number of leads to be bonded at one time is less than the number of leads to be actually bonded, in that case, the bonding required for bonding is performed. A bonding method characterized by changing ultrasonic vibration and load applied to a tool to perform bonding.