JPH0346343A - Semiconductor manufacturing apparatus - Google Patents

Abstract

PURPOSE:To bond an electrode and a metal lead with good accuracy by installing a single bonder which separately bonds an electrode to be bonded of a semiconductor chip and a lead. CONSTITUTION:An electrode 16a to be bonded of a semiconductor chip 16 and a lead 17a are heated, pressurized and bonded by using a pressurization means 11 and a heating means 13. In this case, a bonding means 12 composed of a single bonder 12a which separately bonds the electrode 16a to be bonded of the semiconductor chip 16 and the lead 17a is installed. As a result, even when a height of the electrode 16a to be bonded is irregular, both 16a, 17a can be bonded and treated by separately pressurizing and bonding the electrode 16a to be bonded and the lead 17a. Thereby, reliability of a manufacturing apparatus can be enhanced.

Description

[Detailed Description of the Invention] [Summary] Semiconductor manufacturing equipment, especially TAB (Tape Auto Bondin) for bonding a semiconductor chip and metal leads in a pre-process before proceeding to mold package processing, etc.
g) Regarding the equipment, even if the bump electrodes of the semiconductor chip and the metal leads of the tape carrier are not bonded simultaneously using a large-area bonding hammer, and the heights of the bump electrodes are uneven, the precision The purpose is to bond the electrode and the metal lead well, and includes at least a pressurizing means, a bonding means, a heating means, a sample stage, and a control means, and the sample is placed on the sample stage by the control means. The semiconductor manufacturing method comprises controlling the vertical alignment of the semiconductor chip and the bonding means, and heating and press-bonding the bonded electrode of the semiconductor chip and the lead corresponding to the bonded electrode using the pressure device and the heating device. In the apparatus, the joining means includes providing a single joint that individually joins the electrodes to be joined of the semiconductor chip and the leads.

[Industrial application field]

The present invention relates to semiconductor manufacturing equipment, and more specifically, the present invention relates to a TA for joining a semiconductor chip and a metal lead in a pre-process before proceeding to mold package processing, etc.
This relates to a Tape Auto Bonding (B) device.

In recent years, in a pre-mold puff caging process for semiconductor chips incorporating integrated circuits and the like, metal leads formed on a tape carrier and the semiconductor chip are electrically connected while being automatically fed.

According to this, even if there is variation in the height of the bump electrode of a semiconductor chip due to the miniaturization and high integration of semiconductor integrated circuits (LSI), the bump electrode can be removed with good reproducibility and accuracy. There is a need for a manufacturing device that can connect electrodes and metal leads.

[Conventional technology] 5 and 6 are explanatory diagrams relating to the conventional example.

FIG. 5 shows the constituent countries related to conventional semiconductor manufacturing equipment.

In the figure, a semiconductor manufacturing device such as an automatic bonding device includes a pressure device 1 that applies a bonding force to a bonding hammer, a bonding hammer 2 that bonds a metal lead 7a of a tape carrier 7 and a bump electrode 6a of a semiconductor chip 6; A heating device 3 that supplies heat to the joining hammer 2 and a semiconductor chip processor
The bonding process control device 5 controls the input and output of a stage drive device 4 that moves the placed stage in the X-Y-Z directions.

In addition, the function of the device is as shown in the broken line circle in the figure, the bump electrode 6 of the semiconductor chip 6 incorporating various electric circuits.
a and the metal lead 7a formed on the tape carrier 7 are vertically aligned via the stage driving device W4, and then the bump electrode 6a and the metal lead 7a are moved to the heating device 3.
[Problem to be Solved by the Invention] Fig. 6 is an enlarged view of the joining part related to the problem of the conventional example.

In the figure, 8 is an unbonded part, and the metal lead 7a
A gap is created between the bump electrode 6a and the bump electrode 6a. This is because the joining hammer 2 is a mechanism that presses a group of bump electrodes 6a and metal leads 7a at the same time.
This occurs because the height of the bump electrode of the semiconductor chip 6 is insufficient compared to the other bump electrodes 6a.

The number of occurrences of irregularities in bump electrodes 6a tends to increase as semiconductor integrated circuits become more highly integrated and densely packed. This is thought to be caused by manufacturing variations in the plating of Au bumps and the like due to the reduction in size of bump patterns due to miniaturization.

For this reason, in a device that simultaneously joins a plurality of bump electrode groups 6a and a plurality of metal bonds 7a with one joining hammer 2 having a large area, unbonded portions 8 often occur in one semiconductor chip 6. This may cause a decrease in the reliability of the bonding processing apparatus.

This poses a problem in that the production yield of semiconductor chips deteriorates.

The present invention was created in view of such conventional problems, and it is possible to connect the bump electrode of the semiconductor chimney and the metal lead of the tape carrier at the same time using a large-area bonding machine. It is an object of the present invention to provide a semiconductor manufacturing apparatus that can accurately join an electrode and a metal lead even when the heights are uneven.

[Means to solve the problem]

FIG. 1 shows a principle diagram of the semiconductor manufacturing apparatus of the present invention.

The device includes at least a pressurizing means 11 and a joining means 1.
2, a heating means 13, a sample stage 14 and a control means 15, the control means 15 controls the vertical alignment of the semiconductor chimp 16 placed on the sample stage 14 and the bonding means 12, By the pressurizing means 11 and heating means 13,
In a semiconductor manufacturing apparatus for bonding a bonded electrode 16a of the semiconductor chip 16 and a lead 17a corresponding to the bonded electrode 16a by heating and pressurizing, the bonding means 12 connects the bonded electrode 16a of the semiconductor chip 16 and the lead 17a. The above object is achieved by providing a single zygote 12a for individually joining 17a.

[Effect]

According to the present invention, the bonded electrode 16a of the semiconductor chip 16
There is provided a joining means 12 consisting of a single joint 12a for individually joining the leads 17a.

For this reason, the welded 'F! j, even if the height of the electrode 16a is uneven, the height of the electrode 16a to be bonded -
By individually pressurizing and bonding the two parts 16a and 17a, it becomes possible to join the two parts 16a and 17a with high accuracy.

This makes it possible to reduce bonding defects and the like, thereby making it possible to improve the reliability of the manufacturing apparatus.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

2 to 4 are diagrams for explaining a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 shows a groove diagram of the semiconductor manufacturing apparatus according to an embodiment of the present invention.

In the figure, reference numeral 21 denotes an individual pressurizing output device which is an example of the pressurizing means 1, which supplies bonding force to a single hammer 22a via a bonding force guiding pipe 21a.Individual pressurizing output The device 21 is illustrated in FIG.

22a is a single hammer, which is an example of a single zygote, and a metal lead 2 formed on a tape carrier (not shown).
7a and the bump electrode 26a of the semiconductor chip 26 individually.

Note that 22b is a spring, and the single hammer 22a
This is to assist the bonding force of. Therefore, it assists in guiding the bonding force of the individual pressure output device, and may be omitted.

23 is a heating device which is an embodiment of the heating means 13 shown in FIG. 1, and in the embodiment of the present invention, it is a power supply control device for the heater 23b embedded in the heat transfer guide plate 23a. Note that the heat transfer guide plate 23a will be described in detail in FIG. 3.

24 is a stage driving device which is an example of the sample stage 14, and it moves the stage mounted on the semiconductor chip 26 in the X-Y direction.
-It moves in the Z direction.

Reference numeral 25 denotes a bonding processing control device which is an embodiment of the control means 15 shown in FIG.

FIG. 3 shows a structural diagram of a heat transfer guide plate according to an embodiment of the present invention.

In the figure, the heat transfer guide plate 23a has the function of introducing bonding force from the individual pressure output device 21 to the metal lead 27a and the bump electrode 26a shown in FIG. It has the function of transmitting heat to the junction.

The heat transfer guide brake (23a) is made of metal with good thermal conductivity and is provided with an introduction path 23b. A single hammer 22a is inserted into this introduction channel 23b, which is connected to the wire 21b of the flexible bonding force guide tube 21a.

As a result, the single hammer 22a, which has been supplied with bonding force and heat from the individual pressure output device 21, is moved to the bump electrode 26a.
Pressure can be applied to the joint between the metal lead 27a and the metal lead 27a with good reproducibility.

FIG. 4 is an explanatory diagram of an individual pressurization output device according to an embodiment of the present invention.

In the figure, the individual pressurization output device 21 is of the hydraulic cylinder type in the embodiment of the present invention. That is,
A wire 21b inside the bonding force guide tube 21a is connected to a hydraulic cylinder 21c.

The hydraulic cylinders 21c are provided in correspondence with the number of bump electrodes or metal leads installed.

In the figure, the function of the hydraulic cylinder 21c is to supply pressure to the wire 21b by flowing oil in the rOJ direction of the oil pipe provided in the individual pressure output device 21, and to cause oil to flow in the rOFFJ direction. By this,
The pressure on wire 21b can be released.

These constitute a semiconductor manufacturing apparatus according to an embodiment of the present invention.

Next, FIG. 2 shows the joining processing operation of the apparatus.

The explanation will be given with reference to FIGS. 3 and 4.

For example, v! When bonding the metal lead 27a formed of four foils and the Pd bump electrode 26a, first,
In FIG. 2, the semiconductor chip 26 is placed on the stage of the stage driving device 24, and the bumps tFj26a of the semiconductor chip 26 are horizontally aligned. At this time, the stage drive device W24 is controlled by the control signal S1 from the bonding processing control device 25.

Next, the horizontally aligned stage is moved in the Z direction to vertically align the metal pad 27a of the tape carrier and the bump electrode 26a of the semiconductor chip 26.

Note that the heat transfer guide plate 23a is heated to 200° by the heating device 23° heater 23b in accordance with the control signal S2 in advance.
Heat to about 400°C to 400°C (see Figure 2).

Next, a control signal S3 is outputted from the bonding processing control device 25 to the individual pressure output 21. This control signal S3 is applied to the oil rONJ and r in FIG.

This signal selects the FF direction. As a result, in the individual pressurization output device 21, the oil flows in the ○NJ direction, so that the - group of bump electrodes 26a and the group of metal leads 27a can be individually joined.

In this way, according to the invention, the bumps 1N! of the semiconductor chip 26! i+26a and tape carrier metal lead 2
A single hammer 22a is provided for individually joining 7a.

Therefore, even if the heights of the bump electrodes fi 26a are uneven due to manufacturing variations in the Pd or Au agate process due to higher integration and higher density of the semiconductor chip 26, the bump electrodes 26a By individually pressurizing and bonding the metal lead 27a and the metal lead 27a, it becomes possible to bond the picture electrode 263.degree. 27a with high precision and good reproducibility.

This makes it possible to reduce bonding defects caused by uneven heights between the hammer and bump electrodes, which have a large area, as in the prior art.

In addition, according to the embodiment of the present invention, the batch process is performed by individual bonding, that is, point bonding, so the deformation of the bump electrode due to thermal stress, etc. is less than the conventional bonding using a hammer with a large area, that is, multi-sided bonding. etc., can be suppressed as much as possible.

[Effect of the Invention J As explained above, according to the present invention, even when unevenness occurs in the bump electrode due to point joining using a single hammer,
The bump electrode and the metal lead can be bonded with good reproducibility and precision, and therefore bonding defects caused by conventional one-sided multi-bonding can be reduced. Therefore, it is possible to improve the production yield of semiconductor chips.

This greatly contributes to the manufacture of highly reliable semiconductor manufacturing equipment.

[Brief explanation of drawings]

FIG. 1 is a principle diagram of a semiconductor manufacturing device according to the present invention; FIG. 2 is a constituent country related to a semiconductor manufacturing device according to an embodiment of the present invention; FIG. 3 is a heat transfer guide according to an embodiment of the present invention. FIG. 4 is an explanatory diagram of the individual pressure output device according to the embodiment of the present invention; FIG. 5 is the constituent countries of the conventional semiconductor manufacturing equipment; FIG. 6 is the diagram of the conventional semiconductor manufacturing device. FIG. 3 is an enlarged view of the joint portion related to the problem. (Explanation of symbols) 11... Pressurizing means, 12... Joining means, 12a... Single zygote, 13... Heating means, 14... Sample stage, 15... Control means.

Claims (1)

[Claims] At least a pressurizing means (11), a joining means (12), a heating means (13), a sample stage (14), and a control means (1).
5), the control means (15) controls the vertical alignment of the semiconductor chip (16) placed on the sample stage (14) and the bonding means (12), and the pressurizing means (
11) and heating means (13), the semiconductor chip (1
6) The electrode to be joined (16a) and the electrode to be joined (16a)
In a semiconductor manufacturing apparatus for bonding leads (17a) corresponding to leads (17a) under heat and pressure, the bonding means (12) individually connects the electrodes (16a) of the semiconductor chip (16) to be bonded and the leads (17a). A semiconductor manufacturing apparatus characterized in that a single junction (12a) for joining is provided.