JP3227485B2 - 半導体メモリ素子の製造方法 - Google Patents

半導体メモリ素子の製造方法

Info

Publication number
JP3227485B2
JP3227485B2 JP26793592A JP26793592A JP3227485B2 JP 3227485 B2 JP3227485 B2 JP 3227485B2 JP 26793592 A JP26793592 A JP 26793592A JP 26793592 A JP26793592 A JP 26793592A JP 3227485 B2 JP3227485 B2 JP 3227485B2
Authority
JP
Japan
Prior art keywords
film
forming
etching
oxide film
doped polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP26793592A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05235297A (ja
Inventor
ヨン・ゴン・ゾン
Original Assignee
エルジイ・セミコン・カンパニイ・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エルジイ・セミコン・カンパニイ・リミテッド filed Critical エルジイ・セミコン・カンパニイ・リミテッド
Publication of JPH05235297A publication Critical patent/JPH05235297A/ja
Application granted granted Critical
Publication of JP3227485B2 publication Critical patent/JP3227485B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP26793592A 1991-09-13 1992-09-11 半導体メモリ素子の製造方法 Expired - Fee Related JP3227485B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR16002/1991 1991-09-13
KR1019910016002A KR940004606B1 (ko) 1991-09-13 1991-09-13 반도체 메모리 커패시터 제조방법

Publications (2)

Publication Number Publication Date
JPH05235297A JPH05235297A (ja) 1993-09-10
JP3227485B2 true JP3227485B2 (ja) 2001-11-12

Family

ID=19319918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26793592A Expired - Fee Related JP3227485B2 (ja) 1991-09-13 1992-09-11 半導体メモリ素子の製造方法

Country Status (5)

Country Link
US (1) US5231044A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP3227485B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR940004606B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE4230512C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW225610B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478782A (en) * 1992-05-25 1995-12-26 Sony Corporation Method bonding for production of SOI transistor device
KR960011664B1 (ko) * 1993-05-21 1996-08-24 현대전자산업 주식회사 반도체 장치의 캐패시터 형성방법
US5508881A (en) * 1994-02-01 1996-04-16 Quality Microcircuits Corporation Capacitors and interconnect lines for use with integrated circuits
US5538592A (en) * 1994-07-22 1996-07-23 International Business Machines Corporation Non-random sub-lithography vertical stack capacitor
US5665622A (en) * 1995-03-15 1997-09-09 International Business Machines Corporation Folded trench and rie/deposition process for high-value capacitors
US5523542A (en) * 1995-05-15 1996-06-04 United Microelectronics Corp. Method for making dynamic random access memory cell capacitor
US5529946A (en) * 1995-06-30 1996-06-25 United Microelectronics Corporation Process of fabricating DRAM storage capacitors
US6197671B1 (en) * 1997-09-30 2001-03-06 National Semiconductor Corporation Multiple finger polysilicon gate structure and method of making
TW381342B (en) * 1998-06-17 2000-02-01 United Microelectronics Corp Self-alignment capacitor manufacturing method
US8854865B2 (en) * 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US10497602B2 (en) * 2016-08-01 2019-12-03 Semiconductor Components Industries, Llc Process of forming an electronic device including forming an electronic component and removing a portion of a substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6474752A (en) * 1987-09-17 1989-03-20 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JP2724209B2 (ja) * 1989-06-20 1998-03-09 シャープ株式会社 半導体メモリ素子の製造方法
JPH0391957A (ja) * 1989-09-04 1991-04-17 Sony Corp メモリ装置の製造方法
IT1245495B (it) * 1990-01-26 1994-09-27 Mitsubishi Electric Corp Memoria ad accesso casuale dinamica avente un condensatore del tipo impilato e procedimento di fabbricazione di essa
US5155057A (en) * 1990-11-05 1992-10-13 Micron Technology, Inc. Stacked v-cell capacitor using a disposable composite dielectric on top of a digit line
US5061650A (en) * 1991-01-17 1991-10-29 Micron Technology, Inc. Method for formation of a stacked capacitor
US5084405A (en) * 1991-06-07 1992-01-28 Micron Technology, Inc. Process to fabricate a double ring stacked cell structure

Also Published As

Publication number Publication date
KR930006927A (ko) 1993-04-22
DE4230512A1 (de) 1993-03-18
DE4230512C2 (de) 2003-04-24
JPH05235297A (ja) 1993-09-10
KR940004606B1 (ko) 1994-05-25
US5231044A (en) 1993-07-27
TW225610B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-06-21

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