JP3084024B1 - プラズマｃｖｄ装置のチャンバークリーニング方法およびプラズマｃｖｄ装置 - Google Patents

プラズマｃｖｄ装置のチャンバークリーニング方法およびプラズマｃｖｄ装置

Info

Publication number
JP3084024B1
JP3084024B1 JP11348928A JP34892899A JP3084024B1 JP 3084024 B1 JP3084024 B1 JP 3084024B1 JP 11348928 A JP11348928 A JP 11348928A JP 34892899 A JP34892899 A JP 34892899A JP 3084024 B1 JP3084024 B1 JP 3084024B1
Authority
JP
Japan
Prior art keywords
cleaning
plasma
chamber
frequency
cvd apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP11348928A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001164368A (ja
Inventor
征基 平瀬
智彦 富山
Original Assignee
株式会社半導体先端テクノロジーズ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社半導体先端テクノロジーズ filed Critical 株式会社半導体先端テクノロジーズ
Priority to JP11348928A priority Critical patent/JP3084024B1/ja
Application granted granted Critical
Publication of JP3084024B1 publication Critical patent/JP3084024B1/ja
Priority to KR1020000054773A priority patent/KR100773659B1/ko
Publication of JP2001164368A publication Critical patent/JP2001164368A/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP11348928A 1999-12-08 1999-12-08 プラズマｃｖｄ装置のチャンバークリーニング方法およびプラズマｃｖｄ装置 Expired - Fee Related JP3084024B1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11348928A JP3084024B1 (ja) 1999-12-08 1999-12-08 プラズマｃｖｄ装置のチャンバークリーニング方法およびプラズマｃｖｄ装置
KR1020000054773A KR100773659B1 (ko) 1999-12-08 2000-09-19 플라즈마 ｃｖｄ 장치의 챔버 클리닝 방법 및 플라즈마ｃｖｄ 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11348928A JP3084024B1 (ja) 1999-12-08 1999-12-08 プラズマｃｖｄ装置のチャンバークリーニング方法およびプラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JP3084024B1 true JP3084024B1 (ja) 2000-09-04
JP2001164368A JP2001164368A (ja) 2001-06-19

Family

ID=18400336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11348928A Expired - Fee Related JP3084024B1 (ja) 1999-12-08 1999-12-08 プラズマｃｖｄ装置のチャンバークリーニング方法およびプラズマｃｖｄ装置

Country Status (2)

Country Link
JP (1) JP3084024B1 (ko)
KR (1) KR100773659B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003014413A1 (fr) * 2001-08-07 2003-02-20 Tokyo Electron Limited Dispositif de traitement et procede de nettoyage associe

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030078550A (ko) * 2002-03-30 2003-10-08 주식회사 하이닉스반도체 반응기의 세정 방법
JP3913646B2 (ja) * 2002-08-30 2007-05-09 東京エレクトロン株式会社 基板処理装置
KR101007289B1 (ko) 2008-08-21 2011-01-13 이종열 저 전력 플라즈마를 이용한 샘플클리닝 및 오염제거장치
WO2018193584A1 (ja) * 2017-04-20 2018-10-25 堺ディスプレイプロダクト株式会社 Ｃｖｄ装置およびそのクリーニング方法
JP2020035949A (ja) * 2018-08-31 2020-03-05 エイブリック株式会社 半導体プラズマ処理装置のクリーニング終点検出方法およびチャンバクリーニング方法
JP7479207B2 (ja) * 2020-06-09 2024-05-08 東京エレクトロン株式会社 エッチング方法及び基板処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6159834A (ja) * 1984-08-31 1986-03-27 Hitachi Ltd エツチング終点検出方法
JPH0630351B2 (ja) * 1987-03-31 1994-04-20 株式会社東芝 半導体製造装置のクリ−ニング終点判定方法
JPH0642457A (ja) * 1992-07-23 1994-02-15 Myotoku Kk 圧力流体回転装置による圧力流体発生装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003014413A1 (fr) * 2001-08-07 2003-02-20 Tokyo Electron Limited Dispositif de traitement et procede de nettoyage associe

Also Published As

Publication number Publication date
JP2001164368A (ja) 2001-06-19
KR20010067192A (ko) 2001-07-12
KR100773659B1 (ko) 2007-11-05

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