JP2913716B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2913716B2
JP2913716B2 JP43290A JP43290A JP2913716B2 JP 2913716 B2 JP2913716 B2 JP 2913716B2 JP 43290 A JP43290 A JP 43290A JP 43290 A JP43290 A JP 43290A JP 2913716 B2 JP2913716 B2 JP 2913716B2
Authority
JP
Japan
Prior art keywords
scribe line
film
interlayer insulating
semiconductor device
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP43290A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0372653A (ja
Inventor
直幸 森田
宏昭 津金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP43290A priority Critical patent/JP2913716B2/ja
Priority to KR1019900004880A priority patent/KR100221688B1/ko
Priority to US07/508,848 priority patent/US5136354A/en
Publication of JPH0372653A publication Critical patent/JPH0372653A/ja
Priority to US07/850,826 priority patent/US5237199A/en
Priority to US08/103,640 priority patent/US5414297A/en
Application granted granted Critical
Publication of JP2913716B2 publication Critical patent/JP2913716B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
JP43290A 1989-04-13 1990-01-08 半導体装置 Expired - Lifetime JP2913716B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP43290A JP2913716B2 (ja) 1989-04-13 1990-01-08 半導体装置
KR1019900004880A KR100221688B1 (ko) 1989-04-13 1990-04-10 반도체 장치 및 그의 제조 방법
US07/508,848 US5136354A (en) 1989-04-13 1990-04-12 Semiconductor device wafer with interlayer insulating film covering the scribe lines
US07/850,826 US5237199A (en) 1989-04-13 1992-03-13 Semiconductor device with interlayer insulating film covering the chip scribe lines
US08/103,640 US5414297A (en) 1989-04-13 1993-08-11 Semiconductor device chip with interlayer insulating film covering the scribe lines

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP9412489 1989-04-13
JP1-94124 1989-04-13
JP12474189 1989-05-18
JP1-124741 1989-05-18
JP43290A JP2913716B2 (ja) 1989-04-13 1990-01-08 半導体装置

Publications (2)

Publication Number Publication Date
JPH0372653A JPH0372653A (ja) 1991-03-27
JP2913716B2 true JP2913716B2 (ja) 1999-06-28

Family

ID=27274464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP43290A Expired - Lifetime JP2913716B2 (ja) 1989-04-13 1990-01-08 半導体装置

Country Status (2)

Country Link
JP (1) JP2913716B2 (ko)
KR (1) KR100221688B1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3186266B2 (ja) * 1992-12-03 2001-07-11 セイコーエプソン株式会社 半導体装置
US5593927A (en) * 1993-10-14 1997-01-14 Micron Technology, Inc. Method for packaging semiconductor dice
US5861660A (en) * 1995-08-21 1999-01-19 Stmicroelectronics, Inc. Integrated-circuit die suitable for wafer-level testing and method for forming the same

Also Published As

Publication number Publication date
JPH0372653A (ja) 1991-03-27
KR900017213A (ko) 1990-11-15
KR100221688B1 (ko) 1999-09-15

Similar Documents

Publication Publication Date Title
US5136354A (en) Semiconductor device wafer with interlayer insulating film covering the scribe lines
US5017512A (en) Wafer having a dicing area having a step region covered with a conductive layer and method of manufacturing the same
JP2905500B2 (ja) 半導体装置の製造方法
US5237199A (en) Semiconductor device with interlayer insulating film covering the chip scribe lines
US5132252A (en) Method for fabricating semiconductor devices that prevents pattern contamination
US4962061A (en) Method for manufacturing a multilayer wiring structure employing metal fillets at step portions
CA1205576A (en) Method of manufacturing an integrated circuit device
US6348398B1 (en) Method of forming pad openings and fuse openings
JP2913716B2 (ja) 半導体装置
JP2891264B2 (ja) 半導体装置の製造方法
US20040140052A1 (en) Method for aligning key in semiconductor device
JP2993339B2 (ja) 半導体装置の製造方法
JPH0254563A (ja) 半導体装置
KR100224716B1 (ko) 반도체장치의 제조방법
JP2943283B2 (ja) 固体撮像素子の製造方法
JPH0831710A (ja) 半導体装置の製造方法
JPH06310597A (ja) 半導体装置
JPH06163688A (ja) 半導体集積回路装置
JPS607182A (ja) 半導体装置の製造方法
JPH0656847B2 (ja) 半導体集積回路の製造方法
JPH0222844A (ja) 半導体集積回路
JP2002299203A (ja) 半導体装置の製造方法
JPH05129177A (ja) 半導体装置の製造方法
JPH05251336A (ja) 半導体装置の製造方法
KR20010003781A (ko) 반도체 소자의 제조 방법

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080416

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090416

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090416

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100416

Year of fee payment: 11

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100416

Year of fee payment: 11