JP2846073B2 - 薄膜の製造法及びｘ線マスクの製造法 - Google Patents
薄膜の製造法及びｘ線マスクの製造法Info
- Publication number
- JP2846073B2 JP2846073B2 JP16435290A JP16435290A JP2846073B2 JP 2846073 B2 JP2846073 B2 JP 2846073B2 JP 16435290 A JP16435290 A JP 16435290A JP 16435290 A JP16435290 A JP 16435290A JP 2846073 B2 JP2846073 B2 JP 2846073B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- isolation layer
- frame
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3920788.9 | 1989-06-24 | ||
| DE3920788A DE3920788C1 (enExample) | 1989-06-24 | 1989-06-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0350714A JPH0350714A (ja) | 1991-03-05 |
| JP2846073B2 true JP2846073B2 (ja) | 1999-01-13 |
Family
ID=6383529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16435290A Expired - Lifetime JP2846073B2 (ja) | 1989-06-24 | 1990-06-25 | 薄膜の製造法及びｘ線マスクの製造法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5034972A (enExample) |
| JP (1) | JP2846073B2 (enExample) |
| DE (1) | DE3920788C1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5254375A (en) * | 1991-08-26 | 1993-10-19 | Yen Yung Tsai | Apparatus for controllably separating framed working area from remainder of the membrane |
| DE4238571C1 (de) * | 1992-11-16 | 1994-06-01 | Kernforschungsz Karlsruhe | Verfahren zur Herstellung von durch einen Rahmen aufgespannte Membranen |
| US6162564A (en) * | 1997-11-25 | 2000-12-19 | Kabushiki Kaisha Toshiba | Mask blank and method of producing mask |
| US9401303B2 (en) | 2014-08-01 | 2016-07-26 | Globalfoundries Inc. | Handler wafer removal by use of sacrificial inert layer |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3232499A1 (de) * | 1982-09-01 | 1984-03-01 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie und verfahren zu ihrer herstellung |
| US4539278A (en) * | 1984-03-12 | 1985-09-03 | Eaton Corporation | Mask structure for X-ray lithography and method for making same |
| US4677042A (en) * | 1984-11-05 | 1987-06-30 | Canon Kabushiki Kaisha | Mask structure for lithography, method for preparation thereof and lithographic method |
| DE3600169A1 (de) * | 1985-01-07 | 1986-07-10 | Canon K.K., Tokio/Tokyo | Maskenstruktur zur lithographie, verfahren zu ihrer herstellung und lithographisches verfahren |
-
1989
- 1989-06-24 DE DE3920788A patent/DE3920788C1/de not_active Expired - Lifetime
-
1990
- 1990-06-21 US US07/541,687 patent/US5034972A/en not_active Expired - Lifetime
- 1990-06-25 JP JP16435290A patent/JP2846073B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5034972A (en) | 1991-07-23 |
| DE3920788C1 (enExample) | 1990-12-13 |
| JPH0350714A (ja) | 1991-03-05 |
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